Page 45 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPP80N06S2LH5AKSA1
Infineon Technologies

MOSFET N-CH 55V 80A TO220-3

Package: TO-220-3

Stock2,560
IPD096N08N3GBTMA1
Infineon Technologies

MOSFET N-CH 80V 73A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,896
APT6040BN
Microsemi Corporation

MOSFET N-CH 600V 18A TO247AD

Package: TO-247-3

Stock87,600
IRF840STRR
Vishay Siliconix

MOSFET N-CH 500V 8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock111,948
IPW50R299CPFKSA1
Infineon Technologies

MOSFET N-CH 550V 12A TO247-3

Package: TO-247-3

Stock6,400
IRFR9N20DPBF
Infineon Technologies

MOSFET N-CH 200V 9.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,280
IXFX26N90
IXYS

MOSFET N-CH 900V 26A PLUS 247

Package: TO-247-3

Stock3,008
IXFR180N07
IXYS

MOSFET N-CH 70V 180A ISOPLUS247

Package: ISOPLUS247?

Stock2,512
IXTQ64N25P
IXYS

MOSFET N-CH 250V 64A TO-3P

Package: TO-3P-3, SC-65-3

Stock6,944
IRF840LC
Vishay Siliconix

MOSFET N-CH 500V 8A TO-220AB

Package: TO-220-3

Stock4,688
TK14A45D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 450V 14A TO-220SIS

Package: TO-220-3 Full Pack

Stock7,392
NVMFS5C404NLAFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock5,056
IRFD113PBF
Vishay Siliconix

MOSFET N-CH 60V 800MA 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock3,376
SI3438DV-T1-E3
Vishay Siliconix

MOSFET N-CH 40V 7.4A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock745,380
AON7414
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 20A DFN

Package: 8-PowerSMD, Flat Leads

Stock7,104
FQP44N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 43.5A TO-220

Package: TO-220-3

Stock244,392
NTD4965NT4G
ON Semiconductor

MOSFET N-CH 30V 68A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock250,284
STF19NM50N
STMicroelectronics

MOSFET N-CH 500V 14A TO-220FP

Package: TO-220-3 Full Pack

Stock12,768
IRF720SPBF
Vishay Siliconix

MOSFET N-CH 400V 3.3A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,376
SIHL620STRL-GE3
Vishay Siliconix

LOGIC MOSFET N-CHANNEL 200V

Package: -

Stock2,328

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPP80N06S2LH5AKSA1	Infineon Technologies	MOSFET N-CH 55V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock2,560	MOSFET (Metal Oxide)	55V	80A (Tc)	4.5V, 10V	2V @ 250µA	190nC @ 10V	5000pF @ 25V	±20V	-	300W (Tc)	5 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPD096N08N3GBTMA1	Infineon Technologies	MOSFET N-CH 80V 73A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 46µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 46A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,896	MOSFET (Metal Oxide)	80V	73A (Tc)	6V, 10V	3.5V @ 46µA	35nC @ 10V	2410pF @ 40V	±20V	-	100W (Tc)	9.6 mOhm @ 46A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
APT6040BN	Microsemi Corporation	MOSFET N-CH 600V 18A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock87,600	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	±30V	-	310W (Tc)	400 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
IRF840STRR	Vishay Siliconix	MOSFET N-CH 500V 8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock111,948	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	4V @ 250µA	63nC @ 10V	1300pF @ 25V	±20V	-	3.1W (Ta), 125W (Tc)	850 mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPW50R299CPFKSA1	Infineon Technologies	MOSFET N-CH 550V 12A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,400	MOSFET (Metal Oxide)	550V	12A (Tc)	10V	3.5V @ 440µA	31nC @ 10V	1190pF @ 100V	±20V	-	104W (Tc)	299 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IRFR9N20DPBF	Infineon Technologies	MOSFET N-CH 200V 9.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,280	MOSFET (Metal Oxide)	200V	9.4A (Tc)	10V	5.5V @ 250µA	27nC @ 10V	560pF @ 25V	±30V	-	86W (Tc)	380 mOhm @ 5.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFX26N90	IXYS	MOSFET N-CH 900V 26A PLUS 247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,008	MOSFET (Metal Oxide)	900V	26A (Tc)	10V	5V @ 8mA	240nC @ 10V	10800pF @ 25V	±20V	-	560W (Tc)	300 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFR180N07	IXYS	MOSFET N-CH 70V 180A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 70V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock2,512	MOSFET (Metal Oxide)	70V	180A (Tc)	10V	4V @ 8mA	420nC @ 10V	9400pF @ 25V	±20V	-	417W (Tc)	6 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXTQ64N25P	IXYS	MOSFET N-CH 250V 64A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 49 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock6,944	MOSFET (Metal Oxide)	250V	64A (Tc)	10V	5V @ 250µA	105nC @ 10V	3450pF @ 25V	±20V	-	400W (Tc)	49 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IRF840LC	Vishay Siliconix	MOSFET N-CH 500V 8A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,688	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	±30V	-	125W (Tc)	850 mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
TK14A45D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 14A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 14A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 340 mOhm @ 7A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,392	MOSFET (Metal Oxide)	450V	14A	-	-	-	-	-	-	-	340 mOhm @ 7A, 10V	-	Through Hole	TO-220SIS	TO-220-3 Full Pack
NVMFS5C404NLAFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 370A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 12168pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 0.67 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock5,056	MOSFET (Metal Oxide)	40V	370A (Tc)	4.5V, 10V	2V @ 250µA	81nC @ 4.5V	12168pF @ 25V	±20V	-	200W (Tc)	0.67 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
IRFD113PBF	Vishay Siliconix	MOSFET N-CH 60V 800MA 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 800mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock3,376	MOSFET (Metal Oxide)	60V	800mA (Tc)	10V	4V @ 250µA	7nC @ 10V	200pF @ 25V	±20V	-	1W (Tc)	800 mOhm @ 800mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)
SI3438DV-T1-E3	Vishay Siliconix	MOSFET N-CH 40V 7.4A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.5W (Tc) Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock745,380	MOSFET (Metal Oxide)	40V	7.4A (Tc)	4.5V, 10V	3V @ 250µA	20nC @ 10V	640pF @ 20V	±20V	-	2W (Ta), 3.5W (Tc)	35.5 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
AON7414	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 20A DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.1W (Ta), 15.5W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3x3) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock7,104	MOSFET (Metal Oxide)	30V	12.5A (Ta), 20A (Tc)	4.5V, 10V	2.2V @ 250µA	22nC @ 10V	595pF @ 15V	±20V	-	4.1W (Ta), 15.5W (Tc)	15 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3x3)	8-PowerSMD, Flat Leads
FQP44N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 43.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 146W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 21.75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock244,392	MOSFET (Metal Oxide)	100V	43.5A (Tc)	10V	4V @ 250µA	62nC @ 10V	1800pF @ 25V	±25V	-	146W (Tc)	39 mOhm @ 21.75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTD4965NT4G	ON Semiconductor	MOSFET N-CH 30V 68A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.39W (Ta), 38.5W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock250,284	MOSFET (Metal Oxide)	30V	13A (Ta), 68A (Tc)	4.5V, 10V	2.5V @ 250µA	17.2nC @ 4.5V	1710pF @ 15V	±20V	-	1.39W (Ta), 38.5W (Tc)	4.7 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STF19NM50N	STMicroelectronics	MOSFET N-CH 500V 14A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock12,768	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4V @ 250µA	34nC @ 10V	1000pF @ 50V	±25V	-	30W (Tc)	250 mOhm @ 7A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IRF720SPBF	Vishay Siliconix	MOSFET N-CH 400V 3.3A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,376	MOSFET (Metal Oxide)	400V	3.3A (Tc)	10V	4V @ 250µA	20nC @ 10V	410pF @ 25V	±20V	-	3.1W (Ta), 50W (Tc)	1.8 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHL620STRL-GE3	Vishay Siliconix	LOGIC MOSFET N-CHANNEL 200V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,328	MOSFET (Metal Oxide)	200 V	5.2A (Tc)	4V, 10V	2V @ 250µA	16 nC @ 5 V	360 pF @ 25 V	±10V	-	3.1W (Ta), 50W (Tc)	800mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
APT12057JFLL	Microchip Technology	MOSFET N-CH 1200V 19A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5155 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 570mOhm @ 9.5A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	19A (Tc)	-	5V @ 2.5mA	185 nC @ 10 V	5155 pF @ 25 V	-	-	-	570mOhm @ 9.5A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
IPP052N08N5XKSA1	Infineon Technologies	MOSFET N-CH 85V 100A TO220-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TSM4436CS	Taiwan Semiconductor Corporation	60V, 8A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	8A (Ta)	4.5V, 10V	3V @ 250µA	16 nC @ 4.5 V	1100 pF @ 30 V	±20V	-	2.5W (Ta)	36mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
UF3C120080B7S	Qorvo	SICFET N-CH 1200V 28.8A D2PAK-7 FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock14,757	SiCFET (Cascode SiCJFET)	1200 V	28.8A (Tc)	-	6V @ 10mA	23 nC @ 12 V	754 pF @ 100 V	±25V	-	190W (Tc)	105mOhm @ 20A, 12V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
RQ1E050RPHZGTR	Rohm Semiconductor	PCH -30V -5A SMALL SIGNAL MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Package: -	Stock9,000	MOSFET (Metal Oxide)	30 V	5A (Ta)	4V, 10V	2.5V @ 1mA	13 nC @ 4 V	1300 pF @ 10 V	±20V	-	1.1W (Ta)	31mOhm @ 5A, 10V	-55°C ~ 150°C	Surface Mount	TSMT8	8-SMD, Flat Lead
SQ1464EEH-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 440MA SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 440mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 430mW (Tc) Rds On (Max) @ Id, Vgs: 1.41Ohm @ 2A, 1.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: -	Stock110,685	MOSFET (Metal Oxide)	60 V	440mA (Tc)	1.5V	1V @ 250µA	4.1 nC @ 4.5 V	140 pF @ 25 V	±8V	-	430mW (Tc)	1.41Ohm @ 2A, 1.5V	-55°C ~ 175°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
CPC3981ZTR	IXYS Integrated Circuits Division	MOSFET N-CH DEP 800V 45OH SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 100mA Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 3.1V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 25 V Vgs (Max): ±15V FET Feature: Depletion Mode Power Dissipation (Max): 2.25W (Ta) Rds On (Max) @ Id, Vgs: 45Ohm @ 100mA, 0V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-2L Package / Case: TO-261-3	Package: -	Stock8,685	MOSFET (Metal Oxide)	800 V	100mA	0V	3.1V @ 1µA	-	105 pF @ 25 V	±15V	Depletion Mode	2.25W (Ta)	45Ohm @ 100mA, 0V	150°C (TJ)	Surface Mount	SOT-223-2L	TO-261-3
SQA409CEJW-T1_GE3	Vishay Siliconix	AUTOMOTIVE P-CHANNEL 12 V (D-S) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 13.6W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerPAK®SC-70W-6 Package / Case: PowerPAK® SC-70-6	Package: -	Stock9,150	MOSFET (Metal Oxide)	12 V	9A (Tc)	1.8V, 4.5V	1V @ 250µA	33 nC @ 4.5 V	3070 pF @ 6 V	±8V	-	13.6W (Tc)	19mOhm @ 4.5A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerPAK®SC-70W-6	PowerPAK® SC-70-6