Page 457 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFSL4620PBF
Infineon Technologies

MOSFET N-CH 200V 24A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,024
JANTXV2N7227
Microsemi Corporation

MOSFET N-CH

Package: TO-254-3, TO-254AA (Straight Leads)

Stock6,752
5LP01S-TL-E
ON Semiconductor

MOSFET P-CH 50V 70MA SMCP

Package: SC-75, SOT-416

Stock5,680
AON6702
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 5X6DFN

Package: 8-PowerSMD, Flat Leads

Stock6,192
FDMC8678S
Fairchild/ON Semiconductor

MOSFET N-CH 30V 15A POWER33

Package: 8-PowerTDFN

Stock214,356
PHB38N02LT,118
NXP

MOSFET N-CH 20V 44.7A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,680
IRFB16N50K
Vishay Siliconix

MOSFET N-CH 500V 17A TO-220AB

Package: TO-220-3

Stock2,048
IRFBE30S
Vishay Siliconix

MOSFET N-CH 800V 4.1A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,272
STS20N3LLH6
STMicroelectronics

MOSFET N-CH 30V 20A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock384,144
STD2NK70Z-1
STMicroelectronics

MOSFET N-CH 700V 1.6A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock13,980
STF8NK85Z
STMicroelectronics

MOSFET N-CH 850V 6.7A TO-220FP

Package: TO-220-3 Full Pack

Stock84,720
IXTN200N10T
IXYS

MOSFET N-CH 100V 200A SOT-227

Package: SOT-227-4, miniBLOC

Stock4,608
IXFR20N120P
IXYS

MOSFET N-CH 1200V 13A ISOPLUS247

Package: ISOPLUS247?

Stock4,336
AOWF15S65
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 15A TO262F

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,776
NDF06N60ZG-001
ON Semiconductor

MOSFET N-CH 600V 7.1A TO-220FP

Package: -

Stock2,432
NVTFS4C06NTAG
ON Semiconductor

MOSFET N-CH 30V 71A U8FL

Package: 8-PowerWDFN

Stock2,352
TSM70N380CH C5G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,112
STH240N10F7-6
STMicroelectronics

MOSFET N-CH 100V 180A H2PAK-6

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock4,224
IRFS4115TRLPBF
Infineon Technologies

MOSFET N-CH 150V 195A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock16,284
SI4102DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 3.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock179,544

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFSL4620PBF	Infineon Technologies	MOSFET N-CH 200V 24A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 77.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,024	MOSFET (Metal Oxide)	200V	24A (Tc)	10V	5V @ 100µA	38nC @ 10V	1710pF @ 50V	±20V	-	144W (Tc)	77.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
JANTXV2N7227	Microsemi Corporation	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 415 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock6,752	MOSFET (Metal Oxide)	400V	14A (Tc)	10V	4V @ 250µA	110nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	415 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-254AA	TO-254-3, TO-254AA (Straight Leads)
5LP01S-TL-E	ON Semiconductor	MOSFET P-CH 50V 70MA SMCP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 70mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMCP Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock5,680	MOSFET (Metal Oxide)	50V	70mA (Ta)	1.5V, 4V	-	1.4nC @ 10V	7.4pF @ 10V	±10V	-	150mW (Ta)	23 Ohm @ 40mA, 4V	150°C (TJ)	Surface Mount	SMCP	SC-75, SOT-416
AON6702	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 5X6DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7080pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock6,192	MOSFET (Metal Oxide)	30V	26A (Ta), 85A (Tc)	4.5V, 10V	2.4V @ 250µA	123nC @ 10V	7080pF @ 15V	±20V	Schottky Diode (Body)	2.3W (Ta), 83W (Tc)	2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
FDMC8678S	Fairchild/ON Semiconductor	MOSFET N-CH 30V 15A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock214,356	MOSFET (Metal Oxide)	30V	15A (Ta), 18A (Tc)	4.5V, 10V	3V @ 1mA	34nC @ 10V	2075pF @ 15V	±20V	-	2.3W (Ta), 41W (Tc)	5.2 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerTDFN
PHB38N02LT,118	NXP	MOSFET N-CH 20V 44.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 44.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 20V Vgs (Max): 12V FET Feature: - Power Dissipation (Max): 57.6W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 25A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,680	MOSFET (Metal Oxide)	20V	44.7A (Tc)	2.5V, 5V	1.5V @ 250µA	15.1nC @ 5V	800pF @ 20V	12V	-	57.6W (Tc)	16 mOhm @ 25A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFB16N50K	Vishay Siliconix	MOSFET N-CH 500V 17A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,048	MOSFET (Metal Oxide)	500V	17A (Tc)	10V	5V @ 250µA	89nC @ 10V	2210pF @ 25V	±30V	-	280W (Tc)	350 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFBE30S	Vishay Siliconix	MOSFET N-CH 800V 4.1A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,272	MOSFET (Metal Oxide)	800V	4.1A (Tc)	10V	4V @ 250µA	78nC @ 10V	1300pF @ 25V	±20V	-	125W (Tc)	3 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STS20N3LLH6	STMicroelectronics	MOSFET N-CH 30V 20A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock384,144	MOSFET (Metal Oxide)	30V	20A (Tc)	4.5V, 10V	1V @ 250µA	17nC @ 4.5V	1690pF @ 25V	±20V	-	2.7W (Tc)	4.7 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STD2NK70Z-1	STMicroelectronics	MOSFET N-CH 700V 1.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 7 Ohm @ 800mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock13,980	MOSFET (Metal Oxide)	700V	1.6A (Tc)	10V	4.5V @ 50µA	11.4nC @ 10V	280pF @ 25V	±30V	-	45W (Tc)	7 Ohm @ 800mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STF8NK85Z	STMicroelectronics	MOSFET N-CH 850V 6.7A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3.35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock84,720	MOSFET (Metal Oxide)	850V	6.7A (Tc)	10V	4.5V @ 100µA	60nC @ 10V	1870pF @ 25V	±30V	-	35W (Tc)	1.4 Ohm @ 3.35A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IXTN200N10T	IXYS	MOSFET N-CH 100V 200A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,608	MOSFET (Metal Oxide)	100V	200A	10V	4.5V @ 250µA	152nC @ 10V	9400pF @ 25V	±20V	-	550W (Tc)	5.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFR20N120P	IXYS	MOSFET N-CH 1200V 13A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 630 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock4,336	MOSFET (Metal Oxide)	1200V	13A (Tc)	10V	6.5V @ 1mA	193nC @ 10V	11100pF @ 25V	±30V	-	290W (Tc)	630 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
AOWF15S65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 15A TO262F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 841pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,776	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	4V @ 250µA	17.2nC @ 10V	841pF @ 100V	±30V	-	28W (Tc)	290 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	-	TO-262-3 Long Leads, I2Pak, TO-262AA
NDF06N60ZG-001	ON Semiconductor	MOSFET N-CH 600V 7.1A TO-220FP FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,432	-	-	-	10V	-	-	-	±30V	-	-	-	-	-	-	-
NVTFS4C06NTAG	ON Semiconductor	MOSFET N-CH 30V 71A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,352	MOSFET (Metal Oxide)	30V	21A (Ta)	4.5V, 10V	2.2V @ 250µA	26nC @ 10V	1683pF @ 15V	±20V	-	3.1W (Ta), 37W (Tc)	4.2 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
TSM70N380CH C5G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 981pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,112	MOSFET (Metal Oxide)	700V	11A (Tc)	10V	4V @ 250µA	18.8nC @ 10V	981pF @ 100V	±30V	-	125W (Tc)	380 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
STH240N10F7-6	STMicroelectronics	MOSFET N-CH 100V 180A H2PAK-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock4,224	MOSFET (Metal Oxide)	100V	180A (Tc)	10V	4.5V @ 250µA	160nC @ 10V	11550pF @ 25V	±20V	-	300W (Tc)	2.5 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-7, D2Pak (6 Leads + Tab)
IRFS4115TRLPBF	Infineon Technologies	MOSFET N-CH 150V 195A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5270pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 12.1 mOhm @ 62A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock16,284	MOSFET (Metal Oxide)	150V	195A (Tc)	10V	5V @ 250µA	120nC @ 10V	5270pF @ 50V	±20V	-	375W (Tc)	12.1 mOhm @ 62A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4102DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 3.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 4.8W (Tc) Rds On (Max) @ Id, Vgs: 158 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock179,544	MOSFET (Metal Oxide)	100V	3.8A (Tc)	6V, 10V	4V @ 250µA	11nC @ 10V	370pF @ 50V	±20V	-	2.4W (Ta), 4.8W (Tc)	158 mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMT6016LSS-13	Diodes Incorporated	MOSFET N-CH 60V 9.2A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock61,734	MOSFET (Metal Oxide)	60V	9.2A (Ta)	4.5V, 10V	2.5V @ 250µA	17nC @ 10V	864pF @ 30V	±20V	-	1.5W (Ta)	18 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
APT10026JLL	Microchip Technology	MOSFET N-CH 1000V 30A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 260mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	30A (Tc)	-	5V @ 5mA	267 nC @ 10 V	7114 pF @ 25 V	-	-	-	260mOhm @ 15A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
SIL2305CHE3-TP	Micro Commercial Co	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.8W (Tj) Rds On (Max) @ Id, Vgs: 40mOhm @ 5.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6L Package / Case: SOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	5.6A (Ta)	2.5V, 4.5V	1V @ 250µA	10 nC @ 10 V	770 pF @ 10 V	±12V	-	1.8W (Tj)	40mOhm @ 5.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6L	SOT-23-6
PJQ4402P-AU_R2_000A1	Panjit International Inc.	30V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock14,463	MOSFET (Metal Oxide)	30 V	16A (Ta), 70A (Tc)	4.5V, 10V	2.5V @ 250µA	23 nC @ 4.5 V	2436 pF @ 25 V	±20V	-	2W (Ta), 39W (Tc)	3.8mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN3333-8	8-PowerVDFN
MTB4N40ET4-ON	onsemi	NFET D2PAK 400V 1.8R TR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCH47N60F-F133	onsemi	MOSFET N-CH 600V 47A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	47A (Tc)	10V	5V @ 250µA	270 nC @ 10 V	8000 pF @ 25 V	±30V	-	417W (Tc)	70mOhm @ 23.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
BTS247Z	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SICW080N120Y-BP	Micro Commercial Co	SCHOTTKY DIODES FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 38A Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 3.6V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 1000 V Vgs (Max): +22V, -8V FET Feature: - Power Dissipation (Max): 220W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	38A	18V	3.6V @ 5mA	41 nC @ 18 V	890 pF @ 1000 V	+22V, -8V	-	220W (Tc)	85mOhm @ 20A, 18V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3