Page 460 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLH5036TRPBF
Infineon Technologies

MOSFET N-CH 60V 100A 8-PQFN

Package: 8-PowerVDFN

Stock36,000
IRF6728MTRPBF
Infineon Technologies

MOSFET N-CH 30V 23A DIRECTFET

Package: DirectFET? Isometric MX

Stock5,824
NP80N04PUG-E1B-AY
Renesas Electronics America

MOSFET N-CH 40V 80A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,296
SUD25N04-25-T4-E3
Vishay Siliconix

MOSFET N-CH 40V 25A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock60,012
NTA4153NT1
ON Semiconductor

MOSFET N-CH 20V 915MA SOT-416

Package: SC-75, SOT-416

Stock32,844
AUIRF1324
Infineon Technologies

MOSFET N-CH 24V 195A TO220AB

Package: TO-220-3

Stock3,984
AUIRFR3504TRL
Infineon Technologies

MOSFET N-CH 40V 87A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,360
AOW12N65
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 12A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,152
NVTFS4C25NTAG
ON Semiconductor

MOSFET N-CH 30V 27A U8FL

Package: 8-PowerWDFN

Stock6,016
SI7846DP-T1-E3
Vishay Siliconix

MOSFET N-CH 150V 4A PPAK SO-8

Package: PowerPAK? SO-8

Stock1,034,988
IXFP36N30P3
IXYS

MOSFET N-CH 300V 36A TO220

Package: TO-220-3

Stock7,984
IRLS3813TRLPBF
Infineon Technologies

MOSFET N-CH 30V 160A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock20,340
NTD4302T4G
ON Semiconductor

MOSFET N-CH 30V 8.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,207,980
IPP65R310CFDXKSA1
Infineon Technologies

MOSFET N-CH 650V 11.4A TO220-3

Package: -

Request a Quote
IRFBE20PBF-BE3
Vishay Siliconix

MOSFET N-CH 800V 1.8A TO220AB

Package: -

Request a Quote
FDU6644
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
AOK033V120X2Q
Alpha & Omega Semiconductor Inc.

1200V SILICON CARBIDE MOSFET

Package: -

Request a Quote
LSIC1MO120T0080-TU
IXYS

1200V/80MOHM SIC MOSFET TO-263-7

Package: -

Request a Quote
IPZA60R080P7XKSA1
Infineon Technologies

MOSFET N-CH 600V 37A TO247-4

Package: -

Stock9
DMP3056LDMQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT26 T&R

Package: -

Stock9,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLH5036TRPBF	Infineon Technologies	MOSFET N-CH 60V 100A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 160W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock36,000	MOSFET (Metal Oxide)	60V	20A (Ta), 100A (Tc)	4.5V, 10V	2.5V @ 150µA	90nC @ 10V	5360pF @ 25V	±16V	-	3.6W (Ta), 160W (Tc)	4.4 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerVDFN
IRF6728MTRPBF	Infineon Technologies	MOSFET N-CH 30V 23A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4110pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 23A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock5,824	MOSFET (Metal Oxide)	30V	23A (Ta), 140A (Tc)	4.5V, 10V	2.35V @ 100µA	42nC @ 4.5V	4110pF @ 15V	±20V	-	2.1W (Ta), 75W (Tc)	2.5 mOhm @ 23A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
NP80N04PUG-E1B-AY	Renesas Electronics America	MOSFET N-CH 40V 80A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 115W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,296	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	135nC @ 10V	7350pF @ 25V	±20V	-	1.8W (Ta), 115W (Tc)	4.5 mOhm @ 40A, 10V	175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUD25N04-25-T4-E3	Vishay Siliconix	MOSFET N-CH 40V 25A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock60,012	MOSFET (Metal Oxide)	40V	25A (Tc)	4.5V, 10V	3V @ 250µA	20nC @ 10V	510pF @ 25V	±20V	-	3W (Ta), 33W (Tc)	25 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
NTA4153NT1	ON Semiconductor	MOSFET N-CH 20V 915MA SOT-416 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 915mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.82nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 16V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 300mW (Tj) Rds On (Max) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock32,844	MOSFET (Metal Oxide)	20V	915mA (Ta)	1.5V, 4.5V	1.1V @ 250µA	1.82nC @ 4.5V	110pF @ 16V	±6V	-	300mW (Tj)	230 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
AUIRF1324	Infineon Technologies	MOSFET N-CH 24V 195A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7590pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 195A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,984	MOSFET (Metal Oxide)	24V	195A (Tc)	10V	4V @ 250µA	240nC @ 10V	7590pF @ 24V	±20V	-	300W (Tc)	1.5 mOhm @ 195A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AUIRFR3504TRL	Infineon Technologies	MOSFET N-CH 40V 87A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,360	MOSFET (Metal Oxide)	40V	56A (Tc)	10V	4V @ 250µA	71nC @ 10V	2150pF @ 25V	±20V	-	140W (Tc)	9.2 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
AOW12N65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 12A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 720 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,152	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4.5V @ 250µA	48nC @ 10V	2150pF @ 25V	±30V	-	278W (Tc)	720 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
NVTFS4C25NTAG	ON Semiconductor	MOSFET N-CH 30V 27A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.1A (Ta), 22.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 14.3W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock6,016	MOSFET (Metal Oxide)	30V	10.1A (Ta), 22.1A (Tc)	4.5V, 10V	2.2V @ 250µA	10.3nC @ 10V	500pF @ 15V	±20V	-	3W (Ta), 14.3W (Tc)	17 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
SI7846DP-T1-E3	Vishay Siliconix	MOSFET N-CH 150V 4A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock1,034,988	MOSFET (Metal Oxide)	150V	4A (Ta)	10V	4.5V @ 250µA	36nC @ 10V	-	±20V	-	1.9W (Ta)	50 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IXFP36N30P3	IXYS	MOSFET N-CH 300V 36A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 347W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,984	MOSFET (Metal Oxide)	300V	36A (Tc)	10V	4.5V @ 250µA	30nC @ 10V	2040pF @ 25V	±20V	-	347W (Tc)	110 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRLS3813TRLPBF	Infineon Technologies	MOSFET N-CH 30V 160A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 8020pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 148A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock20,340	MOSFET (Metal Oxide)	30V	160A (Tc)	10V	2.35V @ 150µA	83nC @ 4.5V	8020pF @ 25V	±20V	-	195W (Tc)	1.95 mOhm @ 148A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTD4302T4G	ON Semiconductor	MOSFET N-CH 30V 8.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,207,980	MOSFET (Metal Oxide)	30V	8.4A (Ta), 68A (Tc)	4.5V, 10V	3V @ 250µA	80nC @ 10V	2400pF @ 24V	±20V	-	1.04W (Ta), 75W (Tc)	10 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IPP65R310CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 11.4A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104.2W (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	11.4A (Tc)	10V	4.5V @ 440µA	41 nC @ 10 V	1100 pF @ 100 V	±20V	-	104.2W (Tc)	310mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IRFBE20PBF-BE3	Vishay Siliconix	MOSFET N-CH 800V 1.8A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	1.8A (Tc)	-	4V @ 250µA	38 nC @ 10 V	530 pF @ 25 V	±20V	-	54W (Tc)	6.5Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDU6644	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 67A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3087 pF @ 15 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Stub Leads, IPAK	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	67A (Ta)	4.5V, 10V	3V @ 250µA	35 nC @ 5 V	3087 pF @ 15 V	±16V	-	1.6W (Ta)	8.5mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Stub Leads, IPAK
AOK033V120X2Q	Alpha & Omega Semiconductor Inc.	1200V SILICON CARBIDE MOSFET FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 2.8V @ 17.5mA Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V Vgs (Max): +15V, -5V FET Feature: - Power Dissipation (Max): 300W (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	68A (Tc)	15V	2.8V @ 17.5mA	104 nC @ 15 V	2908 pF @ 800 V	+15V, -5V	-	300W (Ta)	43mOhm @ 20A, 15V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
LSIC1MO120T0080-TU	IXYS	1200V/80MOHM SIC MOSFET TO-263-7 FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	39A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPZA60R080P7XKSA1	Infineon Technologies	MOSFET N-CH 600V 37A TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 129W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	Package: -	Stock9	MOSFET (Metal Oxide)	600 V	37A (Tc)	10V	4V @ 590µA	51 nC @ 10 V	2180 pF @ 400 V	±20V	-	129W (Tc)	80mOhm @ 11.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
DMP3056LDMQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT26 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	Package: -	Stock9,000	MOSFET (Metal Oxide)	30 V	4.3A (Ta)	4.5V, 10V	2.1V @ 250µA	21.1 nC @ 10 V	948 pF @ 25 V	±20V	-	1.25W (Ta)	45mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-26	SOT-23-6
TSM2NB60CH	Taiwan Semiconductor Corporation	600V, 2A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 249 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	2A (Tc)	10V	4.5V @ 250µA	9.4 nC @ 10 V	249 pF @ 25 V	±30V	-	44W (Tc)	4.4Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPAK, TO-251AA
DMTH4004LPSQ-13	Diodes Incorporated	MOSFET N-CH 40V 100A PWRDI5060-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 69.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.83W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	100A (Tc)	4.5V, 10V	3V @ 250µA	69.6 nC @ 10 V	5220 pF @ 20 V	±20V	-	2.83W (Ta), 125W (Tc)	2.5mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
SSM3J372R-LXHF	Toshiba Semiconductor and Storage	AECQ MOSFET PCH -30V -6A SOT23F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V Vgs (Max): +6V, -12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	Package: -	Stock30,726	MOSFET (Metal Oxide)	30 V	6A (Ta)	1.8V, 10V	1.2V @ 1mA	8.2 nC @ 4.5 V	560 pF @ 15 V	+6V, -12V	-	1W (Ta)	42mOhm @ 5A, 10V	150°C	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
NP90N04VDG-E1-AY	Renesas Electronics Corporation	MOSFET N-CH 40V 90A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	90A (Tc)	-	2.5V @ 250µA	135 nC @ 10 V	6900 pF @ 25 V	-	-	1.2W (Ta), 105W (Tc)	4mOhm @ 45A, 10V	175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
NTNS3CS68NZT5G	onsemi	4.3A, 20V, 0.06OHM, 2-ELEMENT, N FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3K16CTC-L3F	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 200MA CST3C FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: CST3C Package / Case: SC-101, SOT-883	Package: -	Stock55,089	MOSFET (Metal Oxide)	20 V	200mA (Ta)	1.5V, 4.5V	1V @ 1mA	-	12 pF @ 10 V	±10V	-	500mW (Ta)	2.2Ohm @ 100mA, 4.5V	150°C	Surface Mount	CST3C	SC-101, SOT-883
DMN3020UFDFQ-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V U-DFN2020- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1304 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 730mW (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10.4A (Ta), 15A (Tc)	1.5V, 4.5V	1V @ 250µA	27 nC @ 8 V	1304 pF @ 15 V	±12V	-	730mW (Ta)	19mOhm @ 4.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
STB22N60M6	STMicroelectronics	MOSFET N-CH 600V 15A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock321	MOSFET (Metal Oxide)	600 V	15A (Tc)	10V	4.75V @ 250µA	20 nC @ 10 V	800 pF @ 100 V	±25V	-	130W (Tc)	230mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB