Page 458 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRLR2905
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,696
IRFZ48VSTRLPBF
Infineon Technologies

MOSFET N-CH 60V 72A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,848
SPU02N60S5BKMA1
Infineon Technologies

MOSFET N-CH 600V 1.8A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,152
IRLR3103PBF
Infineon Technologies

MOSFET N-CH 30V 55A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock462,468
APT12080JVR
Microsemi Corporation

MOSFET N-CH 1.2KV 15A ISOTOP

Package: SOT-227-4, miniBLOC

Stock5,600
HUF76419P3
Fairchild/ON Semiconductor

MOSFET N-CH 60V 29A TO-220AB

Package: TO-220-3

Stock7,232
IRFR010
Vishay Siliconix

MOSFET N-CH 50V 8.2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,202,688
IRF9640STRL
Vishay Siliconix

MOSFET P-CH 200V 11A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,960
BSH111,215
Nexperia USA Inc.

MOSFET N-CH 55V 335MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,656
AOTF5N100
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 1000V 4A TO220F

Package: TO-220-3 Full Pack

Stock3,120
NTMFS4C06NBT3G
ON Semiconductor

MOSFET N-CH 30V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock2,768
NTR2101PT1G
ON Semiconductor

MOSFET P-CH 8V 3.7A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,946,516
SQ4840EY-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 20.7A

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,936
FDMC6688P
Fairchild/ON Semiconductor

MOSFET P-CH 20V POWER33

Package: 8-PowerWDFN

Stock4,928
SCT2280KEC
Rohm Semiconductor

MOSFET N-CH 1200V 14A TO-247

Package: TO-247-3

Stock20,160
IRFR9024NTRPBF
Infineon Technologies

MOSFET P-CH 55V 11A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock94,848
SI8472DB-T2-E1
Vishay Siliconix

MOSFET N-CH 20V 3.3A MICRO

Package: 4-UFBGA

Stock72,000
SI2304DDS-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 3.3A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,028,828
IRF7416QTRPBF
Infineon Technologies

MOSFET P-CH 30V 10A 8-SOIC

Package: -

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TSM60NC196CI-C0G
Taiwan Semiconductor Corporation

600V, 20A, SINGLE N-CHANNEL POWE

Package: -

Stock11,520

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRLR2905	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,696	MOSFET (Metal Oxide)	55V	42A (Tc)	4V, 10V	2V @ 250µA	48nC @ 5V	1700pF @ 25V	±16V	-	110W (Tc)	27 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFZ48VSTRLPBF	Infineon Technologies	MOSFET N-CH 60V 72A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1985pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,848	MOSFET (Metal Oxide)	60V	72A (Tc)	10V	4V @ 250µA	110nC @ 10V	1985pF @ 25V	±20V	-	150W (Tc)	12 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPU02N60S5BKMA1	Infineon Technologies	MOSFET N-CH 600V 1.8A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,152	MOSFET (Metal Oxide)	600V	1.8A (Tc)	10V	5.5V @ 80µA	9.5nC @ 10V	240pF @ 25V	±20V	-	25W (Tc)	3 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IRLR3103PBF	Infineon Technologies	MOSFET N-CH 30V 55A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock462,468	MOSFET (Metal Oxide)	30V	55A (Tc)	4.5V, 10V	1V @ 250µA	50nC @ 4.5V	1600pF @ 25V	±16V	-	107W (Tc)	19 mOhm @ 33A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
APT12080JVR	Microsemi Corporation	MOSFET N-CH 1.2KV 15A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 485nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,600	MOSFET (Metal Oxide)	1200V	15A (Tc)	10V	4V @ 2.5mA	485nC @ 10V	7800pF @ 25V	±30V	-	450W (Tc)	800 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
HUF76419P3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 29A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,232	MOSFET (Metal Oxide)	60V	29A (Tc)	4.5V, 10V	3V @ 250µA	28nC @ 10V	900pF @ 25V	±16V	-	75W (Tc)	35 mOhm @ 29A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFR010	Vishay Siliconix	MOSFET N-CH 50V 8.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,202,688	MOSFET (Metal Oxide)	50V	8.2A (Tc)	10V	4V @ 250µA	10nC @ 10V	250pF @ 25V	±20V	-	25W (Tc)	200 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF9640STRL	Vishay Siliconix	MOSFET P-CH 200V 11A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,960	MOSFET (Metal Oxide)	200V	11A (Tc)	10V	4V @ 250µA	44nC @ 10V	1200pF @ 25V	±20V	-	3W (Ta), 125W (Tc)	500 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSH111,215	Nexperia USA Inc.	MOSFET N-CH 55V 335MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 335mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 830mW (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,656	MOSFET (Metal Oxide)	55V	335mA (Ta)	1.8V, 4.5V	1.3V @ 1mA	1nC @ 8V	40pF @ 10V	±10V	-	830mW (Tc)	4 Ohm @ 500mA, 4.5V	-65°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
AOTF5N100	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 1000V 4A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,120	MOSFET (Metal Oxide)	1000V	4A (Tc)	10V	4.5V @ 250µA	23nC @ 10V	1150pF @ 25V	±30V	-	42W (Tc)	4.2 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
NTMFS4C06NBT3G	ON Semiconductor	MOSFET N-CH 30V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock2,768	MOSFET (Metal Oxide)	30V	20A (Ta), 69A (Tc)	4.5V, 10V	2.1V @ 250µA	26nC @ 10V	1683pF @ 15V	±20V	-	2.55W (Ta), 30.5W (Tc)	4 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTR2101PT1G	ON Semiconductor	MOSFET P-CH 8V 3.7A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1173pF @ 4V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 960mW (Ta) Rds On (Max) @ Id, Vgs: 52 mOhm @ 3.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,946,516	MOSFET (Metal Oxide)	8V	-	1.8V, 4.5V	1V @ 250µA	15nC @ 4.5V	1173pF @ 4V	±8V	-	960mW (Ta)	52 mOhm @ 3.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SQ4840EY-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 20.7A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.1W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,936	MOSFET (Metal Oxide)	40V	20.7A (Tc)	4.5V, 10V	2.5V @ 250µA	62nC @ 10V	2440pF @ 20V	±20V	-	7.1W (Tc)	9 mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMC6688P	Fairchild/ON Semiconductor	MOSFET P-CH 20V POWER33 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7435pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 14A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock4,928	MOSFET (Metal Oxide)	20V	14A (Ta), 56A (Tc)	1.8V, 4.5V	1V @ 250µA	61nC @ 4.5V	7435pF @ 10V	±8V	-	2.3W (Ta), 30W (Tc)	6.5 mOhm @ 14A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (3.3x3.3), Power33	8-PowerWDFN
SCT2280KEC	Rohm Semiconductor	MOSFET N-CH 1200V 14A TO-247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4V @ 1.4mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 667pF @ 800V Vgs (Max): +22V, -6V FET Feature: - Power Dissipation (Max): 108W (Tc) Rds On (Max) @ Id, Vgs: 364 mOhm @ 4A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock20,160	SiCFET (Silicon Carbide)	1200V	14A (Tc)	18V	4V @ 1.4mA	36nC @ 18V	667pF @ 800V	+22V, -6V	-	108W (Tc)	364 mOhm @ 4A, 18V	175°C (TJ)	Through Hole	TO-247	TO-247-3
IRFR9024NTRPBF	Infineon Technologies	MOSFET P-CH 55V 11A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock94,848	MOSFET (Metal Oxide)	55V	11A (Tc)	10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	±20V	-	38W (Tc)	175 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SI8472DB-T2-E1	Vishay Siliconix	MOSFET N-CH 20V 3.3A MICRO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Rds On (Max) @ Id, Vgs: 44 mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Micro Foot (1x1) Package / Case: 4-UFBGA	Package: 4-UFBGA	Stock72,000	MOSFET (Metal Oxide)	20V	-	1.5V, 4.5V	900mV @ 250µA	18nC @ 8V	630pF @ 10V	±8V	-	780mW (Ta), 1.8W (Tc)	44 mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-Micro Foot (1x1)	4-UFBGA
SI2304DDS-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 3.3A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,028,828	MOSFET (Metal Oxide)	30V	3.3A (Ta), 3.6A (Tc)	4.5V, 10V	2.2V @ 250µA	6.7nC @ 10V	235pF @ 15V	±20V	-	1.1W (Ta), 1.7W (Tc)	60 mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IRF7416QTRPBF	Infineon Technologies	MOSFET P-CH 30V 10A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10A (Ta)	-	1V @ 250µA	92 nC @ 10 V	1700 pF @ 25 V	-	-	-	20mOhm @ 5.6A, 10V	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
TSM60NC196CI-C0G	Taiwan Semiconductor Corporation	600V, 20A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Stock11,520	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	5V @ 1mA	39 nC @ 10 V	1535 pF @ 300 V	±30V	-	70W (Tc)	196mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220	TO-220-3 Full Pack, Isolated Tab
AS1M080120P	ANBON SEMICONDUCTOR (INT'L) LIMITED	N-CHANNEL SILICON CARBIDE POWER FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1475 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock276	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	20V	4V @ 5mA	79 nC @ 20 V	1475 pF @ 1000 V	+25V, -10V	-	192W (Tc)	98mOhm @ 20A, 20V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IQE057N10NM6SCATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN62D2U-7	Diodes Incorporated	2N7002 FAMILY SOT23 T&R 3K FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 390mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	390mA (Ta)	1.8V, 5V	1V @ 250µA	0.8 nC @ 4.5 V	41 pF @ 30 V	±20V	-	500mW (Ta)	2Ohm @ 50mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IXTA36P15P-TRL	IXYS	MOSFET P-CH 150V 36A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock5,556	MOSFET (Metal Oxide)	150 V	36A (Tc)	10V	4.5V @ 250µA	55 nC @ 10 V	3100 pF @ 25 V	±20V	-	300W (Tc)	110mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRF9640PBF-BE3	Vishay Siliconix	MOSFET P-CH 200V 11A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock1,719	MOSFET (Metal Oxide)	200 V	11A (Tc)	10V	4V @ 250µA	44 nC @ 10 V	1200 pF @ 25 V	±20V	-	125W (Tc)	500mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STW75N60M6	STMicroelectronics	MOSFET N-CH 600V 72A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 36A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	72A (Tc)	10V	4.75V @ 250µA	106 nC @ 10 V	4850 pF @ 100 V	±25V	-	446W (Tc)	36mOhm @ 36A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
DMT4031LFDF-7	Diodes Incorporated	MOSFET BVDSS: 31V~40V U-DFN2020- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 20 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	6.8A (Ta)	4.5V, 10V	2.5V @ 250µA	7 nC @ 10 V	362 pF @ 20 V	±16V	-	1.2W (Ta)	26mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
IRLML2244TRPBF-ML	MOSLEADER	P -20V SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-