Page 472 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7807VD2PBF
Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,296
AON6748_101
Alpha & Omega Semiconductor Inc.

MOSFET N-CH DFN

Package: -

Stock5,872
APT30N60KC6
Microsemi Corporation

MOSFET N-CH 600V 30A TO-220

Package: TO-220-3

Stock7,392
SI4636DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 17A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock383,724
FQA19N20C
Fairchild/ON Semiconductor

MOSFET N-CH 200V 21.8A TO-3P

Package: TO-3P-3, SC-65-3

Stock12,384
IPA60R165CPXKSA1
Infineon Technologies

MOSFET N-CH 600V 21A TO220-3

Package: TO-220-3 Full Pack

Stock4,752
IXTN8N150L
IXYS

MOSFET N-CH 1500V 7.5A SOT-227B

Package: SOT-227-4, miniBLOC

Stock3,200
IPA80R1K2P7XKSA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO220-3

Package: TO-220-3 Full Pack

Stock3,872
AOI8N25
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 250V 8A TO251A

Package: TO-251-3 Stub Leads, IPak

Stock7,440
NTMFS4C09NBT3G
ON Semiconductor

MOSFET N-CH 30V SO8FL

Package: -

Stock6,800
DMN53D0LW-13
Diodes Incorporated

MOSFET N-CH 50V SOT323

Package: SC-70, SOT-323

Stock5,360
FQPF6N80CT
Fairchild/ON Semiconductor

MOSFET N-CH 800V 5.5A TO-220F

Package: TO-220-3 Full Pack

Stock13,800
IRF7425TRPBF
Infineon Technologies

MOSFET P-CH 20V 15A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock718,788
RTF015P02TL
Rohm Semiconductor

MOSFET P-CH 20V 1.5A TUMT3

Package: 3-SMD, Flat Leads

Stock405,360
DMN55D0UT-7
Diodes Incorporated

MOSFET N-CH 50V 160MA SOT-523

Package: SOT-523

Stock337,500
CSD17556Q5B
Texas Instruments

MOSFET N-CH 30V 8-VSON

Package: 8-PowerTDFN

Stock491,532
IRFD9110PBF
Vishay Siliconix

MOSFET P-CH 100V 0.7A 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock120,000
PJQ4460AP_R2_00001
Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

Package: -

Request a Quote
P5102FMNV-ML
MOSLEADER

Single P -20V -3.5A SOT-23

Package: -

Request a Quote
MS34N02
Bruckewell

N-Channel MOSFET,30V,4.6A,SOT-23

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7807VD2PBF	Infineon Technologies	MOSFET N-CH 30V 8.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,296	MOSFET (Metal Oxide)	30V	8.3A (Ta)	4.5V	1V @ 250µA	14nC @ 4.5V	-	±20V	Schottky Diode (Isolated)	2.5W (Ta)	25 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AON6748_101	Alpha & Omega Semiconductor Inc.	MOSFET N-CH DFN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,872	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT30N60KC6	Microsemi Corporation	MOSFET N-CH 600V 30A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2267pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 [K] Package / Case: TO-220-3	Package: TO-220-3	Stock7,392	MOSFET (Metal Oxide)	600V	30A (Tc)	-	3.5V @ 960µA	88nC @ 10V	2267pF @ 25V	-	-	219W (Tc)	125 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 [K]	TO-220-3
SI4636DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 17A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2635pF @ 15V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 4.4W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock383,724	MOSFET (Metal Oxide)	30V	17A (Tc)	4.5V, 10V	2.5V @ 250µA	60nC @ 10V	2635pF @ 15V	±16V	-	2.5W (Ta), 4.4W (Tc)	8.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FQA19N20C	Fairchild/ON Semiconductor	MOSFET N-CH 200V 21.8A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 10.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock12,384	MOSFET (Metal Oxide)	200V	21.8A (Tc)	10V	4V @ 250µA	53nC @ 10V	1080pF @ 25V	±30V	-	180W (Tc)	170 mOhm @ 10.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
IPA60R165CPXKSA1	Infineon Technologies	MOSFET N-CH 600V 21A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 660µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,752	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	3.5V @ 660µA	52nC @ 10V	2000pF @ 100V	±20V	-	34W (Tc)	165 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
IXTN8N150L	IXYS	MOSFET N-CH 1500V 7.5A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 545W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 4A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,200	MOSFET (Metal Oxide)	1500V	7.5A (Tc)	20V	8V @ 250µA	250nC @ 15V	8000pF @ 25V	±30V	-	545W (Tc)	3.6 Ohm @ 4A, 20V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IPA80R1K2P7XKSA1	Infineon Technologies	MOSFET N-CH 800V COOLMOS TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 500V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,872	MOSFET (Metal Oxide)	800V	4.5A (Tc)	10V	3.5V @ 80µA	11nC @ 10V	300pF @ 500V	±20V	-	25W (Tc)	1.2 Ohm @ 1.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
AOI8N25	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 250V 8A TO251A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 306pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 560 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock7,440	MOSFET (Metal Oxide)	250V	8A (Tc)	10V	4.3V @ 250µA	7.2nC @ 10V	306pF @ 25V	±30V	-	78W (Tc)	560 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPak
NTMFS4C09NBT3G	ON Semiconductor	MOSFET N-CH 30V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): 760mW (Ta) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: -	Package: -	Stock6,800	MOSFET (Metal Oxide)	30V	-	-	-	-	1252pF @ 15V	-	-	760mW (Ta)	-	-55°C ~ 150°C (TJ)	Surface Mount	-	-
DMN53D0LW-13	Diodes Incorporated	MOSFET N-CH 50V SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 45.8pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 270mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock5,360	MOSFET (Metal Oxide)	50V	360mA (Ta)	5V, 10V	1.5V @ 100µA	1.2nC @ 10V	45.8pF @ 25V	±20V	-	320mW (Ta)	2 Ohm @ 270mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
FQPF6N80CT	Fairchild/ON Semiconductor	MOSFET N-CH 800V 5.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 51W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock13,800	MOSFET (Metal Oxide)	800V	5.5A (Tc)	10V	5V @ 250µA	30nC @ 10V	1310pF @ 25V	±30V	-	51W (Tc)	2.5 Ohm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IRF7425TRPBF	Infineon Technologies	MOSFET P-CH 20V 15A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7980pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock718,788	MOSFET (Metal Oxide)	20V	15A (Ta)	2.5V, 4.5V	1.2V @ 250µA	130nC @ 4.5V	7980pF @ 15V	±12V	-	2.5W (Ta)	8.2 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
RTF015P02TL	Rohm Semiconductor	MOSFET P-CH 20V 1.5A TUMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock405,360	MOSFET (Metal Oxide)	20V	1.5A (Ta)	2.5V, 4.5V	2V @ 1mA	5.2nC @ 4.5V	560pF @ 10V	±12V	-	800mW (Ta)	135 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	TUMT3	3-SMD, Flat Leads
DMN55D0UT-7	Diodes Incorporated	MOSFET N-CH 50V 160MA SOT-523 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 4 Ohm @ 100mA, 4V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: SOT-523	Stock337,500	MOSFET (Metal Oxide)	50V	160mA (Ta)	2.5V, 4V	1V @ 250µA	-	25pF @ 10V	±12V	-	200mW (Ta)	4 Ohm @ 100mA, 4V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
CSD17556Q5B	Texas Instruments	MOSFET N-CH 30V 8-VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.65V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 191W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock491,532	MOSFET (Metal Oxide)	30V	34A (Ta), 100A (Tc)	4.5V, 10V	1.65V @ 250µA	39nC @ 4.5V	7020pF @ 15V	±20V	-	3.1W (Ta), 191W (Tc)	1.4 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
IRFD9110PBF	Vishay Siliconix	MOSFET P-CH 100V 0.7A 4-DIP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 420mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock120,000	MOSFET (Metal Oxide)	100V	700mA (Ta)	10V	4V @ 250µA	8.7nC @ 10V	200pF @ 25V	±20V	-	1.3W (Ta)	1.2 Ohm @ 420mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
PJQ4460AP_R2_00001	Panjit International Inc.	60V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	3.7A (Ta), 11A (Tc)	4.5V, 10V	2.5V @ 250µA	9.3 nC @ 10 V	509 pF @ 15 V	±20V	-	2W (Ta), 20W (Tc)	72mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN3333-8	8-PowerVDFN
P5102FMNV-ML	MOSLEADER	Single P -20V -3.5A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MS34N02	Bruckewell	N-Channel MOSFET,30V,4.6A,SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 28mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	-	4.6A (Ta)	-	2.5V @ 250µA	-	-	±20V	-	-	28mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
RFD3N08L	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	3A (Tc)	5V	2.5V @ 250µA	8 nC @ 10 V	-	±10V	-	30W (Tc)	800mOhm @ 1.5A, 5V	-55°C ~ 175°C (TJ)	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
IPQC65R017CFD7AXTMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22 Package / Case: 22-PowerBSOP Module	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	136A (Tc)	10V	4.5V @ 3.08mA	236 nC @ 10 V	12338 pF @ 400 V	±20V	-	694W (Tc)	17mOhm @ 61.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22	22-PowerBSOP Module
TSM300NB06LCV	Taiwan Semiconductor Corporation	60V, 24A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 962 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3.15x3.1) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	5A (Ta), 24A (Tc)	4.5V, 10V	2.5V @ 250µA	17 nC @ 10 V	962 pF @ 30 V	±20V	-	1.9W (Ta), 39W (Tc)	30mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (3.15x3.1)	8-PowerWDFN
RX3P12BATC16	Rohm Semiconductor	PCH -100V -120A POWER MOSFET: RX FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 385 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16600 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 201W (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 60A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,571	MOSFET (Metal Oxide)	100 V	120A (Tc)	6V, 10V	4V @ 1mA	385 nC @ 10 V	16600 pF @ 50 V	±20V	-	201W (Tc)	12.3mOhm @ 60A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIHB6N80E-GE3	Vishay Siliconix	MOSFET N-CH 800V 5.4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	5.4A (Tc)	10V	4V @ 250µA	44 nC @ 10 V	827 pF @ 100 V	±30V	-	78W (Tc)	940mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
EPC2066	EPC	TRANSISTOR GAN 40V .001OHM FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 28mA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 20 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Stock26,142	GaNFET (Gallium Nitride)	40 V	90A (Ta)	5V	2.5V @ 28mA	33 nC @ 5 V	4523 pF @ 20 V	+6V, -4V	-	-	1.1mOhm @ 50A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIHA2N80E-GE3	Vishay Siliconix	MOSFET N-CH 800V 2.8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Stock45	MOSFET (Metal Oxide)	800 V	2.8A (Tc)	10V	4V @ 250µA	19.6 nC @ 10 V	315 pF @ 100 V	±30V	-	29W (Tc)	2.75Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
NTMFS4C910NBT3G	onsemi	TRENCH 6 30V NCH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock15,000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-