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Infineon Technologies |
MOSFET N-CH 30V 30A TO-220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock527,928 |
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MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 14nC @ 10V | 1500pF @ 15V | ±20V | - | 38W (Tc) | 11.4 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 140A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock46,800 |
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MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 1V @ 250µA | 140nC @ 4.5V | 5000pF @ 25V | ±16V | - | 3.8W (Ta), 200W (Tc) | 6 mOhm @ 71A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 200V 9.3A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 82W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock49,260 |
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MOSFET (Metal Oxide) | 200V | 9.3A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | ±20V | - | 82W (Tc) | 300 mOhm @ 5.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 5.5A TO220FP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,608 |
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MOSFET (Metal Oxide) | 100V | 5.5A (Tc) | 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | ±20V | - | 30W (Tc) | 480 mOhm @ 4A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Diodes Incorporated |
MOSFET N-CH 400V 0.09A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 50 Ohm @ 100mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock20,196 |
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MOSFET (Metal Oxide) | 400V | 90mA (Ta) | 10V | 3V @ 1mA | - | 70pF @ 25V | ±20V | - | 700mW (Ta) | 50 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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NXP |
MOSFET N-CH 30V 43.4A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 43.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 57.6W (Tc)
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock19,392 |
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MOSFET (Metal Oxide) | 30V | 43.4A (Tc) | 4.5V, 10V | 2V @ 250µA | 18.5nC @ 10V | 690pF @ 25V | ±20V | - | 57.6W (Tc) | 17 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 28A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock2,480 |
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MOSFET (Metal Oxide) | 150V | 56A (Tc) | 8V, 10V | 4.6V @ 60µA | 23.1nC @ 10V | 1820pF @ 75V | ±20V | - | 96W (Tc) | 16 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 21A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 53 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,744 |
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MOSFET (Metal Oxide) | 150V | 21A (Tc) | 8V, 10V | 4V @ 35µA | 12nC @ 10V | 887pF @ 75V | ±20V | - | 68W (Tc) | 53 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET NCH 50V 500MA SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta), 920mW (Tc)
- Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 220mA, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,344 |
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MOSFET (Metal Oxide) | 50V | 500mA (Ta) | 4.5V, 10V | 1.5V @ 250µA | 0.8nC @ 10V | 40pF @ 10V | ±20V | - | 600mW (Ta), 920mW (Tc) | 1.8 Ohm @ 220mA, 10V | - | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1469pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 113W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,712 |
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MOSFET (Metal Oxide) | 40V | 91A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 23.5nC @ 10V | 1469pF @ 20V | ±20V | - | 113W (Tc) | 7 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET P-CH 20V 0.1A VML1006
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 100mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VML1006
- Package / Case: SC-101, SOT-883
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Package: SC-101, SOT-883 |
Stock5,808 |
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MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 1V @ 100µA | - | 15pF @ 10V | ±10V | - | 100mW (Ta) | 3.8 Ohm @ 100mA, 4.5V | 150°C (TJ) | Surface Mount | VML1006 | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 80V 60A SOP ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock6,048 |
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MOSFET (Metal Oxide) | 80V | 60A (Tc) | 10V | 4V @ 1mA | 59nC @ 10V | 5300pF @ 40V | ±20V | - | 1.6W (Ta), 78W (Tc) | 4 mOhm @ 30A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Fairchild/ON Semiconductor |
MOSFET N CH 100V 39A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 145W (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 39A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock8,280 |
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MOSFET (Metal Oxide) | 100V | 39A (Tc) | 4.5V, 10V | 3V @ 250µA | 67nC @ 10V | 1820pF @ 25V | ±16V | - | 145W (Tc) | 35 mOhm @ 39A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 21A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2322pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock17,472 |
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MOSFET (Metal Oxide) | 650V | 21A (Tc) | 10V | 4V @ 250µA | 106nC @ 10V | 2322pF @ 100V | ±30V | - | 208W (Tc) | 180 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET P-CH 30V 3.5A TSMT6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock1,199,928 |
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MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 9.2nC @ 5V | 780pF @ 10V | ±20V | - | 1.25W (Ta) | 65 mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Microchip Technology |
MOSFET N-CH 30V 640MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 20V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock10,128 |
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MOSFET (Metal Oxide) | 30V | 640mA (Tj) | 5V, 10V | 2.5V @ 1mA | - | 190pF @ 20V | ±30V | - | 1W (Tc) | 1.2 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 2.04mA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 370mOhm @ 7.5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 15A (Ta) | 10V | 4V @ 2.04mA | 55 nC @ 10 V | 2200 pF @ 300 V | ±30V | - | 45W (Tc) | 370mOhm @ 7.5A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET P-CH 30V 10.5A 6UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 19.5W (Tc)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 9.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2523-6
- Package / Case: 6-PowerUDFN
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Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 10.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 33.7 nC @ 10 V | 1674 pF @ 15 V | ±25V | - | 1W (Ta), 19.5W (Tc) | 14mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2523-6 | 6-PowerUDFN |
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Infineon Technologies |
MOSFET N-CH 700V 6A TO251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
- Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 30.5W (Tc)
- Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 700 V | 6A (Tc) | 10V | 3.5V @ 60µA | 6.8 nC @ 400 V | 211 pF @ 400 V | ±16V | - | 30.5W (Tc) | 900mOhm @ 1.1A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Panjit International Inc. |
20V P-CHANNEL ENHANCEMENT MODE M
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 4659 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 60W (Tc)
- Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333-8
- Package / Case: 8-PowerVDFN
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Package: - |
Stock14,793 |
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MOSFET (Metal Oxide) | 20 V | 13A (Ta), 60A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 46.8 nC @ 4.5 V | 4659 pF @ 15 V | ±12V | - | 2W (Ta), 60W (Tc) | 8mOhm @ 8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN3333-8 | 8-PowerVDFN |
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Goford Semiconductor |
P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)<
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3.15x3.05)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock14,628 |
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MOSFET (Metal Oxide) | 20 V | 45A (Tc) | 2.5V, 4.5V | 1V @ 250µA | 55 nC @ 4.5 V | 3500 pF @ 10 V | ±12V | - | 29W (Tc) | 9.5mOhm @ 10A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3.15x3.05) | 8-PowerVDFN |
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onsemi |
MOSFET N-CH 100V 185A 8HPSOF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Ta)
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HPSOF
- Package / Case: 8-PowerSFN
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Package: - |
Stock9,510 |
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MOSFET (Metal Oxide) | 100 V | 185A (Tc) | 10V | 4V @ 250µA | 69 nC @ 10 V | 3240 pF @ 50 V | ±20V | - | 300W (Ta) | 4.1mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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onsemi |
FET -150V 53.0 MOHM PQFN56
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 150 V | 4.4A (Ta), 22A (Tc) | 6V, 10V | 4V @ 250µA | 63 nC @ 10 V | 3905 pF @ 75 V | ±25V | - | 2.5W (Ta), 104W (Tc) | 53mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V~60V POWERDI506
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1926 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W
- Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 4V @ 250µA | 35.2 nC @ 10 V | 1926 pF @ 30 V | ±20V | - | 1.6W | 11mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V~60V POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 40.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.74W (Ta), 20.5W (Tc)
- Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 14.8A (Ta), 40.6A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 28.4 nC @ 10 V | 1406 pF @ 30 V | ±20V | - | 2.74W (Ta), 20.5W (Tc) | 8.3mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
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Panjit International Inc. |
60V P-CHANNEL ENHANCEMENT MODE M
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: - |
Stock15,246 |
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MOSFET (Metal Oxide) | 60 V | 5A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 17 nC @ 10 V | 879 pF @ 30 V | ±20V | - | 3.1W (Ta) | 68mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Taiwan Semiconductor Corporation |
600V, 9.5A, SINGLE N-CHANNEL POW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 380mOhm @ 2.85A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 9.5A (Tc) | 10V | 4V @ 250µA | 19.4 nC @ 10 V | 795 pF @ 100 V | ±30V | - | 83W (Tc) | 380mOhm @ 2.85A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPAK, TO-251AA |
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Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -0.45A, -2
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 450mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 312mW
- Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
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Package: - |
Stock15,015 |
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MOSFET (Metal Oxide) | 20 V | 450mA (Tc) | 1.2V, 4.5V | 1V @ 250µA | 1 nC @ 4.5 V | 40 pF @ 10 V | ±8V | - | 312mW | 600mOhm @ 300mA, 4.5V | -55°C ~ 150°C | Surface Mount | SOT-523 | SOT-523 |
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