Page 474 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPU20N03L G
Infineon Technologies

MOSFET N-CH 30V 30A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,440
AON6410
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 24A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock129,876
NTD4808NT4G
ON Semiconductor

MOSFET N-CH 30V 9.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock147,480
PHP32N06LT,127
NXP

MOSFET N-CH 60V 34A TO220AB

Package: TO-220-3

Stock3,248
IRLW510ATM
Fairchild/ON Semiconductor

MOSFET N-CH 100V 5.6A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,552
IRF740S
Vishay Siliconix

MOSFET N-CH 400V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock16,560
IXTP76N25T
IXYS

MOSFET N-CH 250V 76A TO-220

Package: TO-220-3

Stock2,576
TK12E60W,S1VX
Toshiba Semiconductor and Storage

MOSFET N CH 600V 11.5A TO-220

Package: TO-220-3

Stock3,488
IRFZ48RPBF
Vishay Siliconix

MOSFET N-CH 60V 50A TO-220AB

Package: TO-220-3

Stock17,712
TSM2N100CH C5G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,408
STD20NF06LAG
STMicroelectronics

MOSFET N-CH 60V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,760
AOB20S60L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 20A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,512
SSM3K7002BS,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 200MA SMD

Package: TO-236-3, SC-59, SOT-23-3

Stock36,000
TPN1600ANH,L1Q
Toshiba Semiconductor and Storage

MOSFET N CH 100V 17A 8TSON-ADV

Package: 8-PowerVDFN

Stock6,608
SQD15N06-42L_GE3
Vishay Siliconix

MOSFET N-CH 60V 15A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,472
ZVP3310A
Diodes Incorporated

MOSFET P-CH 100V 0.14A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock34,068
PXN5R4-30QLJ
Nexperia USA Inc.

PXN5R4-30QL/SOT8002/MLPAK33

Package: -

Stock104,697
PJD18N20_L2_00001
Panjit International Inc.

200V N-CHANNEL ENHANCEMENT MODE

Package: -

Stock26,145
AONR66820
Alpha & Omega Semiconductor Inc.

N

Package: -

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G3R350MT12J-TR
GeneSiC Semiconductor

1200V 350M TO-263-7 G3R SIC MOSF

Package: -

Stock2,310

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPU20N03L G	Infineon Technologies	MOSFET N-CH 30V 30A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: P-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,440	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	2V @ 25µA	11nC @ 5V	700pF @ 25V	±20V	-	60W (Tc)	20 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	P-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
AON6410	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 24A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1452pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock129,876	MOSFET (Metal Oxide)	30V	10A (Ta), 24A (Tc)	4.5V, 10V	2.5V @ 250µA	28nC @ 10V	1452pF @ 15V	±12V	-	2W (Ta), 35W (Tc)	12 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
NTD4808NT4G	ON Semiconductor	MOSFET N-CH 30V 9.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1538pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta), 54.6W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock147,480	MOSFET (Metal Oxide)	30V	10A (Ta), 63A (Tc)	4.5V, 11.5V	2.5V @ 250µA	13nC @ 4.5V	1538pF @ 12V	±20V	-	1.4W (Ta), 54.6W (Tc)	8 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHP32N06LT,127	NXP	MOSFET N-CH 60V 34A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 97W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,248	MOSFET (Metal Oxide)	60V	34A (Tc)	4.5V, 10V	2V @ 1mA	17nC @ 5V	1280pF @ 25V	±15V	-	97W (Tc)	37 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRLW510ATM	Fairchild/ON Semiconductor	MOSFET N-CH 100V 5.6A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 2.8A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,552	MOSFET (Metal Oxide)	100V	5.6A (Tc)	5V	2V @ 250µA	8nC @ 5V	235pF @ 25V	±20V	-	3.8W (Ta), 37W (Tc)	440 mOhm @ 2.8A, 5V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF740S	Vishay Siliconix	MOSFET N-CH 400V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock16,560	MOSFET (Metal Oxide)	400V	10A (Tc)	10V	4V @ 250µA	63nC @ 10V	1400pF @ 25V	±20V	-	3.1W (Ta), 125W (Tc)	550 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTP76N25T	IXYS	MOSFET N-CH 250V 76A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,576	MOSFET (Metal Oxide)	250V	76A (Tc)	10V	5V @ 1mA	92nC @ 10V	4500pF @ 25V	±30V	-	460W (Tc)	39 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
TK12E60W,S1VX	Toshiba Semiconductor and Storage	MOSFET N CH 600V 11.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock3,488	MOSFET (Metal Oxide)	600V	11.5A (Ta)	10V	3.7V @ 600µA	25nC @ 10V	890pF @ 300V	±30V	Super Junction	110W (Tc)	300 mOhm @ 5.8A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
IRFZ48RPBF	Vishay Siliconix	MOSFET N-CH 60V 50A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock17,712	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 250µA	110nC @ 10V	2400pF @ 25V	±20V	-	190W (Tc)	18 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
TSM2N100CH C5G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 77W (Tc) Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,408	MOSFET (Metal Oxide)	1000V	1.85A (Tc)	10V	5.5V @ 250µA	17nC @ 10V	625pF @ 25V	±30V	-	77W (Tc)	8.5 Ohm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
STD20NF06LAG	STMicroelectronics	MOSFET N-CH 60V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,760	MOSFET (Metal Oxide)	60V	20A	5V, 10V	-	12nC @ 10V	-	-	-	-	-	-	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
AOB20S60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 20A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1038pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 266W (Tc) Rds On (Max) @ Id, Vgs: 199 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,512	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	4.1V @ 250µA	19.8nC @ 10V	1038pF @ 100V	±30V	-	266W (Tc)	199 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SSM3K7002BS,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 200MA SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock36,000	MOSFET (Metal Oxide)	60V	200mA (Ta)	4.5V, 10V	2.5V @ 250µA	-	17pF @ 25V	±20V	-	200mW (Ta)	2.1 Ohm @ 500mA, 10V	150°C (TJ)	Surface Mount	S-Mini	TO-236-3, SC-59, SOT-23-3
TPN1600ANH,L1Q	Toshiba Semiconductor and Storage	MOSFET N CH 100V 17A 8TSON-ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,608	MOSFET (Metal Oxide)	100V	17A (Tc)	10V	4V @ 200µA	19nC @ 10V	1600pF @ 50V	±20V	-	700mW (Ta), 42W (Tc)	16 mOhm @ 8.5A, 10V	150°C (TJ)	Surface Mount	8-TSON Advance (3.3x3.3)	8-PowerVDFN
SQD15N06-42L_GE3	Vishay Siliconix	MOSFET N-CH 60V 15A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,472	MOSFET (Metal Oxide)	60V	15A (Tc)	4.5V, 10V	2.5V @ 250µA	15nC @ 10V	535pF @ 25V	±20V	-	37W (Tc)	42 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
ZVP3310A	Diodes Incorporated	MOSFET P-CH 100V 0.14A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock34,068	MOSFET (Metal Oxide)	100V	140mA (Ta)	10V	3.5V @ 1mA	-	50pF @ 25V	±20V	-	625mW (Ta)	20 Ohm @ 150mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
PXN5R4-30QLJ	Nexperia USA Inc.	PXN5R4-30QL/SOT8002/MLPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MLPAK33 Package / Case: 8-PowerVDFN	Package: -	Stock104,697	MOSFET (Metal Oxide)	30 V	14A (Ta), 66A (Tc)	4.5V, 10V	2.5V @ 250µA	36.3 nC @ 10 V	1600 pF @ 15 V	±20V	-	1.8W (Ta), 39W (Tc)	5.4mOhm @ 14.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	MLPAK33	8-PowerVDFN
PJD18N20_L2_00001	Panjit International Inc.	200V N-CHANNEL ENHANCEMENT MODE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock26,145	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	3V @ 250µA	24 nC @ 10 V	1017 pF @ 25 V	±20V	-	83W (Tc)	160mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
AONR66820	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.1W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 17A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	17A (Ta), 50A (Tc)	8V, 10V	4.1V @ 250µA	50 nC @ 10 V	1950 pF @ 40 V	±20V	-	4.1W (Ta), 104W (Tc)	8.8mOhm @ 17A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3.3x3.3)	8-PowerWDFN
G3R350MT12J-TR	GeneSiC Semiconductor	1200V 350M TO-263-7 G3R SIC MOSF FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 2.7V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 395mOhm @ 4A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock2,310	SiC (Silicon Carbide Junction Transistor)	1200 V	10A (Tc)	15V, 18V	2.7V @ 2mA	10 nC @ 15 V	331 pF @ 800 V	+22V, -10V	-	64W (Tc)	395mOhm @ 4A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
STD13N50DM2AG	STMicroelectronics	POWER TRANSISTORS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	11A (Tc)	-	-	-	-	±25V	-	-	-	-	-	-	-
PMPB43XPEAX	Nexperia USA Inc.	MOSFET P-CH 20V 5A DFN2020MD-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock8,400	MOSFET (Metal Oxide)	20 V	5A (Ta)	1.8V, 4.5V	1V @ 250µA	23.4 nC @ 4.5 V	1550 pF @ 10 V	±12V	-	1.7W (Ta), 12.5W (Tc)	48mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
DMNH6008SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V POWERDI506 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2597 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	16.5A (Ta), 88A (Tc)	10V	4V @ 250µA	40.1 nC @ 10 V	2597 pF @ 30 V	±20V	-	1.6W	8mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
IRF7494TR	Infineon Technologies	MOSFET N-CH 150V 5.2A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	5.2A (Ta)	-	4V @ 250µA	54 nC @ 10 V	1750 pF @ 25 V	-	-	-	44mOhm @ 3.1A, 10V	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
GC20N65QD	Goford Semiconductor	MOSFET N-CH 650V 20A TO-247 FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-247-3 Package / Case: -	Package: -	Stock90	MOSFET (Metal Oxide)	-	20A (Tc)	10V	5V @ 250µA	39 nC @ 10 V	1729 pF @ 400 V	±30V	-	-	190mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-247-3	-
BSM180C12P3C202	Rohm Semiconductor	SICFET N-CH 1200V 180A MODULE FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5.6V @ 50mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 10 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 880W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: Module	Package: -	Stock30	SiCFET (Silicon Carbide)	1200 V	180A (Tc)	-	5.6V @ 50mA	-	9000 pF @ 10 V	+22V, -4V	-	880W (Tc)	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
IPT039N15N5XTMA1	Infineon Technologies	TRENCH >=100V PG-HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 257µA Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 319W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	190A (Tc)	8V, 10V	4.6V @ 257µA	98 nC @ 10 V	7700 pF @ 75 V	±20V	-	319W (Tc)	3.9mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN
IPP013N04NF2SAKMA1	Infineon Technologies	TRENCH PG-TO220-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-