Page 491 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI45P03P4L11AKSA1
Infineon Technologies

MOSFET P-CH 30V 45A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,464
IRFZ44VZL
Infineon Technologies

MOSFET N-CH 60V 57A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,248
AON7422E_101
Alpha & Omega Semiconductor Inc.

MOSFET N-CH DFN

Package: 8-VDFN Exposed Pad

Stock3,984
SI2331DS-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 3.2A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock110,400
FQPF3N50C
Fairchild/ON Semiconductor

MOSFET N-CH 500V 3A TO-220F

Package: TO-220-3 Full Pack

Stock29,820
IRFB17N50L
Vishay Siliconix

MOSFET N-CH 500V 16A TO-220AB

Package: TO-220-3

Stock428,160
PMV117EN,215
NXP

MOSFET N-CH 30V 2.5A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock142,800
NVMFS6B03NLWFT1G
ON Semiconductor

MOSFET N-CH 100V 20A 5DFN

Package: 8-PowerTDFN

Stock3,168
PSMN3R4-30BL,118
Nexperia USA Inc.

MOSFET N-CH 30V 100A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,256
TSM260P02CX6 RFG
TSC America Inc.

MOSFET, SINGLE, P-CHANNEL, -20V,

Package: SOT-23-6

Stock6,960
NTZS3151PT1G
ON Semiconductor

MOSFET P-CH 20V 0.86A SOT-563

Package: SOT-563, SOT-666

Stock1,007,376
STD2N105K5
STMicroelectronics

MOSFET N-CH 1050V 1.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,416
FQD7P06TM
Fairchild/ON Semiconductor

MOSFET P-CH 60V 5.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock150,000
MCP87130T-U/LC
Microchip Technology

MOSFET N-CH 25V 8PDFN

Package: 8-PowerTDFN

Stock76,800
IRFR9220PBF
Vishay Siliconix

MOSFET P-CH 200V 3.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock59,064
IRFU024NPBF
Infineon Technologies

MOSFET N-CH 55V 17A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock337,824
SI1422DH-T1-GE3
Vishay Siliconix

MOSFET N-CH 12V 4A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock38,400
IRF9Z30PBF-BE3
Vishay Siliconix

MOSFET P-CH 50V 18A TO220AB

Package: -

Stock26,580
NTMFS5C670NT1G
onsemi

MOSFET N-CH 60V 17A/71A 5DFN

Package: -

Request a Quote
SI2304-13P
Micro Commercial Co

MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI45P03P4L11AKSA1	Infineon Technologies	MOSFET P-CH 30V 45A TO262-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 25V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,464	MOSFET (Metal Oxide)	30V	45A (Tc)	4.5V, 10V	2V @ 85µA	55nC @ 10V	3770pF @ 25V	+5V, -16V	-	58W (Tc)	11.1 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFZ44VZL	Infineon Technologies	MOSFET N-CH 60V 57A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,248	MOSFET (Metal Oxide)	60V	57A (Tc)	10V	4V @ 250µA	65nC @ 10V	1690pF @ 25V	±20V	-	92W (Tc)	12 mOhm @ 34A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
AON7422E_101	Alpha & Omega Semiconductor Inc.	MOSFET N-CH DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3x3) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock3,984	MOSFET (Metal Oxide)	30V	20A (Ta), 40A (Tc)	4.5V, 10V	2.4V @ 250µA	50nC @ 10V	2940pF @ 15V	±20V	-	3.1W (Ta), 36W (Tc)	4.3 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3x3)	8-VDFN Exposed Pad
SI2331DS-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 3.2A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 710mW (Ta) Rds On (Max) @ Id, Vgs: 48 mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock110,400	MOSFET (Metal Oxide)	12V	3.2A (Ta)	1.8V, 4.5V	900mV @ 250µA	14nC @ 4.5V	780pF @ 6V	±8V	-	710mW (Ta)	48 mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
FQPF3N50C	Fairchild/ON Semiconductor	MOSFET N-CH 500V 3A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock29,820	MOSFET (Metal Oxide)	500V	3A (Tc)	10V	4V @ 250µA	13nC @ 10V	365pF @ 25V	±30V	-	25W (Tc)	2.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IRFB17N50L	Vishay Siliconix	MOSFET N-CH 500V 16A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 220W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock428,160	MOSFET (Metal Oxide)	500V	16A (Tc)	10V	5V @ 250µA	130nC @ 10V	2760pF @ 25V	±30V	-	220W (Tc)	320 mOhm @ 9.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
PMV117EN,215	NXP	MOSFET N-CH 30V 2.5A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 147pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Tc) Rds On (Max) @ Id, Vgs: 117 mOhm @ 500mA, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock142,800	MOSFET (Metal Oxide)	30V	2.5A (Tc)	4.5V, 10V	2V @ 1mA	4.6nC @ 10V	147pF @ 10V	±20V	-	830mW (Tc)	117 mOhm @ 500mA, 10V	-65°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
NVMFS6B03NLWFT1G	ON Semiconductor	MOSFET N-CH 100V 20A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5320pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 198W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,168	MOSFET (Metal Oxide)	100V	-	4.5V, 10V	3V @ 250µA	9.4nC @ 10V	5320pF @ 25V	±16V	-	3.9W (Ta), 198W (Tc)	4 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
PSMN3R4-30BL,118	Nexperia USA Inc.	MOSFET N-CH 30V 100A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3907pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,256	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	2.15V @ 1mA	64nC @ 10V	3907pF @ 15V	±20V	-	114W (Tc)	3.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TSM260P02CX6 RFG	TSC America Inc.	MOSFET, SINGLE, P-CHANNEL, -20V, FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	Package: SOT-23-6	Stock6,960	MOSFET (Metal Oxide)	20V	6.5A (Tc)	1.8V, 4.5V	1V @ 250µA	19.5nC @ 4.5V	1670pF @ 15V	±10V	-	1.56W (Tc)	26 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-26	SOT-23-6
NTZS3151PT1G	ON Semiconductor	MOSFET P-CH 20V 0.86A SOT-563 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 16V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 170mW (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 950mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-563 Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock1,007,376	MOSFET (Metal Oxide)	20V	860mA (Ta)	1.8V, 4.5V	1V @ 250µA	5.6nC @ 4.5V	458pF @ 16V	±8V	-	170mW (Ta)	150 mOhm @ 950mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563	SOT-563, SOT-666
STD2N105K5	STMicroelectronics	MOSFET N-CH 1050V 1.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 8 Ohm @ 750mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,416	MOSFET (Metal Oxide)	1050V	1.5A (Tc)	10V	5V @ 100µA	10nC @ 10V	115pF @ 100V	±30V	-	60W (Tc)	8 Ohm @ 750mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD7P06TM	Fairchild/ON Semiconductor	MOSFET P-CH 60V 5.4A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 451 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock150,000	MOSFET (Metal Oxide)	60V	5.4A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	295pF @ 25V	±25V	-	2.5W (Ta), 28W (Tc)	451 mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
MCP87130T-U/LC	Microchip Technology	MOSFET N-CH 25V 8PDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 12.5V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3x3) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock76,800	MOSFET (Metal Oxide)	25V	43A (Tc)	3.3V, 10V	1.7V @ 250µA	8nC @ 4.5V	400pF @ 12.5V	+10V, -8V	-	1.7W (Ta)	13.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (3x3)	8-PowerTDFN
IRFR9220PBF	Vishay Siliconix	MOSFET P-CH 200V 3.6A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock59,064	MOSFET (Metal Oxide)	200V	3.6A (Tc)	10V	4V @ 250µA	20nC @ 10V	340pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFU024NPBF	Infineon Technologies	MOSFET N-CH 55V 17A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock337,824	MOSFET (Metal Oxide)	55V	17A (Tc)	10V	4V @ 250µA	20nC @ 10V	370pF @ 25V	±20V	-	45W (Tc)	75 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
SI1422DH-T1-GE3	Vishay Siliconix	MOSFET N-CH 12V 4A SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 5.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock38,400	MOSFET (Metal Oxide)	12V	4A (Tc)	1.8V, 4.5V	1V @ 250µA	20nC @ 8V	725pF @ 6V	±8V	-	1.56W (Ta), 2.8W (Tc)	26 mOhm @ 5.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6 (SOT-363)	6-TSSOP, SC-88, SOT-363
IRF9Z30PBF-BE3	Vishay Siliconix	MOSFET P-CH 50V 18A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 9.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock26,580	MOSFET (Metal Oxide)	50 V	18A (Tc)	10V	4V @ 250µA	39 nC @ 10 V	900 pF @ 25 V	±20V	-	74W (Tc)	140mOhm @ 9.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTMFS5C670NT1G	onsemi	MOSFET N-CH 60V 17A/71A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 53µA Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	17A (Ta), 71A (Tc)	10V	4V @ 53µA	14.4 nC @ 10 V	1035 pF @ 30 V	±20V	-	3.6W (Ta), 61W (Tc)	7mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SI2304-13P	Micro Commercial Co	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.5A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	2.5A	4.5V, 10V	2V @ 250µA	10 nC @ 10 V	240 pF @ 15 V	±20V	-	1W	90mOhm @ 2.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IPP020N06NXKSA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 143µA Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	120A (Tc)	6V, 10V	3.3V @ 143µA	124 nC @ 10 V	9750 pF @ 30 V	±20V	-	3W (Ta), 214W (Tc)	2mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
PJD11N06A_L2_00001	Panjit International Inc.	60V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	3.7A (Ta), 11A (Tc)	4.5V, 10V	2.5V @ 250µA	9.3 nC @ 10 V	509 pF @ 15 V	±20V	-	2W (Ta), 25W (Tc)	75mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFBC20PBF-BE3	Vishay Siliconix	MOSFET N-CH 600V 2.2A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,925	MOSFET (Metal Oxide)	600 V	2.2A (Tc)	10V	4V @ 250µA	18 nC @ 10 V	350 pF @ 25 V	±20V	-	50W (Tc)	4.4Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
AS2312	ANBON SEMICONDUCTOR (INT'L) LIMITED	N-CHANNEL ENHANCEMENT MODE MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock67,383	MOSFET (Metal Oxide)	20 V	6.8A (Ta)	1.8V, 4.5V	1V @ 250µA	11.05 nC @ 4.5 V	888 pF @ 10 V	±10V	-	1.2W (Ta)	18mOhm @ 6.8A, 4.5V	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
BTS247ZE3062ANTMA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-5-2 Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	33A (Tc)	4.5V, 10V	2V @ 90µA	90 nC @ 10 V	1730 pF @ 25 V	±20V	-	120W (Tc)	18mOhm @ 12A, 10V	-40°C ~ 175°C (TJ)	Surface Mount	PG-TO263-5-2	TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
NTHL060N065SC1	onsemi	SIC MOS TO247-3L 650V FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V Vgs (Max): +22V, -8V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock1,608	SiCFET (Silicon Carbide)	650 V	47A (Tc)	15V, 18V	4.3V @ 6.5mA	74 nC @ 18 V	1473 pF @ 325 V	+22V, -8V	-	176W (Tc)	70mOhm @ 20A, 18V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
SI3139KS-TP	Micro Commercial Co	Interface FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 600mA Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 350mW Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	600mA	1.8V, 4.5V	1.1V @ 250µA	0.86 nC @ 4.5 V	40 pF @ 16 V	±12V	-	350mW	850mOhm @ 500mA, 4.5V	-55°C ~ 150°C	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
BSC050N03LSGATMA1	Infineon Technologies	MOSFET N-CH 30V 18A/80A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	Package: -	Stock37,764	MOSFET (Metal Oxide)	30 V	18A (Ta), 80A (Tc)	4.5V, 10V	2.2V @ 250µA	35 nC @ 10 V	2800 pF @ 15 V	±20V	-	2.5W (Ta), 50W (Tc)	5mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-5	8-PowerTDFN