Page 489 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLR3103TRRPBF
Infineon Technologies

MOSFET N-CH 30V 55A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,952
SI2302ADS-T1
Vishay Siliconix

MOSFET N-CH 20V 2.1A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock94,812
FQB30N06TM
Fairchild/ON Semiconductor

MOSFET N-CH 60V 30A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,592
FQB5N20LTM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,856
FQI3N40TU
Fairchild/ON Semiconductor

MOSFET N-CH 400V 2.5A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,344
IPB90N06S404ATMA2
Infineon Technologies

MOSFET N-CH 60V 90A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,416
SIPC03S2N03LX3MA1
Infineon Technologies

LV POWER MOS

Package: -

Stock7,024
APT50N60JCCU2
Microsemi Corporation

MOSFET N-CH 600V 50A SOT-227

Package: SOT-227-4, miniBLOC

Stock7,616
IXTP3N100P
IXYS

MOSFET N-CH 1000V 3A TO-220

Package: TO-220-3

Stock3,600
NVTFS4C10NWFTAG
ON Semiconductor

MOSFET N-CH 30V 15.3A U8FL

Package: 8-PowerWDFN

Stock5,568
BUK9230-55A,118
Nexperia USA Inc.

MOSFET N-CH 55V 38A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,100
DMN6068LK3Q-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V TO252

Package: -

Stock4,096
DMN2028UFDF-13
Diodes Incorporated

MOSFET N-CH 20V 7.9A U-DFN2020-6

Package: 6-UDFN Exposed Pad

Stock3,744
APT29F100B2
Microsemi Corporation

MOSFET N-CH 1000V 30A T-MAX

Package: TO-247-3 Variant

Stock6,032
STD2N95K5
STMicroelectronics

MOSFET N-CH 950V 2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,944
IRFH4210DTRPBF
Infineon Technologies

MOSFET N-CH 25V 44A 8PQFN

Package: 8-PowerTDFN

Stock40,200
R6035KNZC8
Rohm Semiconductor

NCH 600V 35A POWER MOSFET

Package: TO-3P-3 Full Pack

Stock9,960
BSC084P03NS3 G
Infineon Technologies

MOSFET P-CH 30V 14.9A TDSON-8

Package: 8-PowerTDFN

Stock37,884
AON6250
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 150V 52A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock3,472
SQ3427AEEV-T1_BE3
Vishay Siliconix

MOSFET P-CH 60V 5.3A 6TSOP

Package: -

Stock25,455

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLR3103TRRPBF	Infineon Technologies	MOSFET N-CH 30V 55A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,952	MOSFET (Metal Oxide)	30V	55A (Tc)	4.5V, 10V	1V @ 250µA	50nC @ 4.5V	1600pF @ 25V	±16V	-	107W (Tc)	19 mOhm @ 33A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SI2302ADS-T1	Vishay Siliconix	MOSFET N-CH 20V 2.1A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock94,812	MOSFET (Metal Oxide)	20V	2.1A (Ta)	2.5V, 4.5V	1.2V @ 50µA	10nC @ 4.5V	300pF @ 10V	±8V	-	700mW (Ta)	60 mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
FQB30N06TM	Fairchild/ON Semiconductor	MOSFET N-CH 60V 30A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,592	MOSFET (Metal Oxide)	60V	30A (Tc)	10V	4V @ 250µA	25nC @ 10V	945pF @ 25V	±25V	-	3.75W (Ta), 79W (Tc)	40 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB5N20LTM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 4.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,856	MOSFET (Metal Oxide)	200V	4.5A (Tc)	5V, 10V	2V @ 250µA	6.2nC @ 5V	325pF @ 25V	±25V	-	3.13W (Ta), 52W (Tc)	1.2 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQI3N40TU	Fairchild/ON Semiconductor	MOSFET N-CH 400V 2.5A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 1.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,344	MOSFET (Metal Oxide)	400V	2.5A (Tc)	10V	5V @ 250µA	7.5nC @ 10V	230pF @ 25V	±30V	-	3.13W (Ta), 55W (Tc)	3.4 Ohm @ 1.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IPB90N06S404ATMA2	Infineon Technologies	MOSFET N-CH 60V 90A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,416	MOSFET (Metal Oxide)	60V	90A (Tc)	10V	4V @ 90µA	128nC @ 10V	10400pF @ 25V	±20V	-	150W (Tc)	4 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIPC03S2N03LX3MA1	Infineon Technologies	LV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,024	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT50N60JCCU2	Microsemi Corporation	MOSFET N-CH 600V 50A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 22.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,616	MOSFET (Metal Oxide)	600V	50A	10V	3.9V @ 3mA	150nC @ 10V	6800pF @ 25V	±20V	-	290W (Tc)	45 mOhm @ 22.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
IXTP3N100P	IXYS	MOSFET N-CH 1000V 3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,600	MOSFET (Metal Oxide)	1000V	3A (Tc)	10V	4.5V @ 250µA	39nC @ 10V	1100pF @ 25V	±20V	-	125W (Tc)	4.8 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NVTFS4C10NWFTAG	ON Semiconductor	MOSFET N-CH 30V 15.3A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 993pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock5,568	MOSFET (Metal Oxide)	30V	15.3A (Ta), 47A (Tc)	4.5V, 10V	2.2V @ 250µA	19.3nC @ 10V	993pF @ 15V	±20V	-	3W (Ta), 28W (Tc)	7.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
BUK9230-55A,118	Nexperia USA Inc.	MOSFET N-CH 55V 38A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,100	MOSFET (Metal Oxide)	55V	38A (Tc)	4.5V, 10V	2V @ 1mA	-	1725pF @ 25V	±10V	-	88W (Tc)	27 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
DMN6068LK3Q-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V TO252 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,096	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN2028UFDF-13	Diodes Incorporated	MOSFET N-CH 20V 7.9A U-DFN2020-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 907pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 660mW (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock3,744	MOSFET (Metal Oxide)	20V	7.9A (Ta)	1.5V, 4.5V	1V @ 250µA	18nC @ 8V	907pF @ 10V	±8V	-	660mW (Ta)	25 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
APT29F100B2	Microsemi Corporation	MOSFET N-CH 1000V 30A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock6,032	MOSFET (Metal Oxide)	1000V	30A (Tc)	10V	5V @ 2.5mA	260nC @ 10V	8500pF @ 25V	±30V	-	1040W (Tc)	440 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
STD2N95K5	STMicroelectronics	MOSFET N-CH 950V 2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 100V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,944	MOSFET (Metal Oxide)	950V	2A (Tc)	10V	5V @ 100µA	10nC @ 10V	105pF @ 100V	30V	-	45W (Tc)	5 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFH4210DTRPBF	Infineon Technologies	MOSFET N-CH 25V 44A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 44A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4812pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock40,200	MOSFET (Metal Oxide)	25V	44A (Ta)	4.5V, 10V	2.1V @ 100µA	77nC @ 10V	4812pF @ 13V	±20V	-	3.5W (Ta), 125W (Tc)	1.1 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerTDFN
R6035KNZC8	Rohm Semiconductor	NCH 600V 35A POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 102W (Tc) Rds On (Max) @ Id, Vgs: 102 mOhm @ 18.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock9,960	MOSFET (Metal Oxide)	600V	35A (Tc)	10V	5V @ 1mA	72nC @ 10V	3000pF @ 25V	±20V	-	102W (Tc)	102 mOhm @ 18.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
BSC084P03NS3 G	Infineon Technologies	MOSFET P-CH 30V 14.9A TDSON-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.1V @ 105µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4785pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock37,884	MOSFET (Metal Oxide)	30V	14.9A (Ta), 78.6A (Tc)	6V, 10V	3.1V @ 105µA	58nC @ 10V	4785pF @ 15V	±25V	-	2.5W (Ta), 69W (Tc)	8.4 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
AON6250	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 150V 52A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2388pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.4W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock3,472	MOSFET (Metal Oxide)	150V	13.5A (Ta), 52A (Tc)	6V, 10V	3.4V @ 250µA	43nC @ 10V	2388pF @ 75V	±20V	-	7.4W (Ta), 104W (Tc)	16.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
SQ3427AEEV-T1_BE3	Vishay Siliconix	MOSFET P-CH 60V 5.3A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock25,455	MOSFET (Metal Oxide)	60 V	5.3A (Tc)	4.5V, 10V	2.5V @ 250µA	22 nC @ 10 V	1000 pF @ 30 V	±20V	-	5W (Tc)	95mOhm @ 4.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
IRFR320PBF-BE3	Vishay Siliconix	N-CHANNEL 400V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	400 V	3.1A (Tc)	10V	4V @ 250µA	20 nC @ 10 V	350 pF @ 25 V	±20V	-	2.5W (Ta), 42W (Tc)	1.8Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIDR680ADP-T1-RE3	Vishay Siliconix	MOSFET N-CH 80V 30.7A/137A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	30.7A (Ta), 137A (Tc)	7.5V, 10V	3.5V @ 250µA	83 nC @ 10 V	4415 pF @ 40 V	±20V	-	6.25W (Ta), 125W (Tc)	2.88mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8
DI045N03PT-AQ	Diotec Semiconductor	IC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 16W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (3x3) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	45A (Tc)	4.5V, 10V	2.5V @ 250µA	53 nC @ 10 V	2300 pF @ 15 V	±20V	-	16W (Tc)	4.4mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (3x3)	8-PowerVDFN
R6030KNXC7G	Rohm Semiconductor	600V 30A TO-220FM, HIGH-SPEED SW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock2,985	MOSFET (Metal Oxide)	600 V	30A (Ta)	10V	5V @ 1mA	56 nC @ 10 V	2350 pF @ 25 V	±20V	-	86W (Tc)	130mOhm @ 14.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
NTMFSC1D6N06CL	onsemi	MOSFET N-CH 60V 36A/235A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 166W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6.15) Package / Case: 8-PowerVDFN	Package: -	Stock2,070	MOSFET (Metal Oxide)	60 V	36A (Ta), 235A (Tc)	-	2V @ 250µA	91 nC @ 10 V	6660 pF @ 25 V	±20V	-	3.8W (Ta), 166W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6.15)	8-PowerVDFN
IXFT80N65X2HV-TRL	IXYS	MOSFET N-CH 650V 80A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXFT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	80A (Tc)	10V	5V @ 4mA	140 nC @ 10 V	8300 pF @ 25 V	±30V	-	890W (Tc)	38mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
ISP75DP06LMXTSA1	Infineon Technologies	MOSFET P-CH 60V 1.1A SOT223-4 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 77µA Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: -	Stock10,359	MOSFET (Metal Oxide)	60 V	1.1A (Ta)	4.5V, 10V	2V @ 77µA	4 nC @ 10 V	120 pF @ 30 V	±20V	-	1.8W (Ta), 4.2W (Tc)	750mOhm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
RSS090N03FRATB	Rohm Semiconductor	MOSFET N-CH 30V 9A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	9A (Ta)	4V, 10V	2.5V @ 1mA	15 nC @ 5 V	810 pF @ 10 V	±20V	-	1.4W (Ta)	16mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)