Page 492 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI25N06S3-25
Infineon Technologies

MOSFET N-CH 55V 25A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,184
IRF1704
Infineon Technologies

MOSFET N-CH 40V 170A TO-220AB

Package: TO-220-3

Stock4,992
BUK752R7-60E,127
NXP

MOSFET N-CH 60V 120A TO220AB

Package: TO-220-3

Stock4,784
RP1E075RPTR
Rohm Semiconductor

MOSFET P-CH 30V 7.5A MPT6

Package: 6-SMD, Flat Leads

Stock3,856
AOW480
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 15A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,056
IPB80N04S2H4ATMA2
Infineon Technologies

MOSFET N-CHANNEL_30/40V

Package: -

Stock7,808
IPI70N10S3L12AKSA1
Infineon Technologies

MOSFET N-CH 100V 70A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,640
SKI03036
Sanken

MOSFET N-CH 30V 80A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,280
PSMN038-100K,518
Nexperia USA Inc.

MOSFET N-CH 100V SOT96-1

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,336
BUK9Y43-60E,115
Nexperia USA Inc.

MOSFET N-CH 60V 22A LFPAK

Package: SC-100, SOT-669

Stock3,760
FDP12N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 11.5A TO-220

Package: TO-220-3

Stock17,808
IPA50R280CEXKSA2
Infineon Technologies

MOSFET N-CH 500V 7.5A TO-220FP

Package: TO-220-3 Full Pack

Stock21,768
IPB100N12S305ATMA1
Infineon Technologies

N-CHANNEL_100+

Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Stock5,792
STB36NM60ND
STMicroelectronics

MOSFET N-CH 600V 29A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,352
IRFH8316TRPBF
Infineon Technologies

MOSFET N-CH 30V 27A PQFN5X6

Package: 8-PowerTDFN

Stock28,812
SIHFR430ATRR-GE3
Vishay Siliconix

MOSFET N-CH 500V 5A DPAK

Package: -

Request a Quote
RJK0213DPA-00-J53
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
PJE8404_R1_00001
Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

Package: -

Stock5,580
AM2328NE-T1-PF-ML
MOSLEADER

Single N 20V 6.5A SOT-23

Package: -

Request a Quote
NVMFS5C420NWFT1G
onsemi

POWER MOSFET, N-CHANNEL, SO8FL,

Package: -

Stock4,500

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI25N06S3-25	Infineon Technologies	MOSFET N-CH 55V 25A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1862pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 25.1 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,184	MOSFET (Metal Oxide)	55V	25A (Tc)	10V	4V @ 20µA	41nC @ 10V	1862pF @ 25V	±20V	-	48W (Tc)	25.1 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF1704	Infineon Technologies	MOSFET N-CH 40V 170A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,992	MOSFET (Metal Oxide)	40V	170A (Tc)	10V	4V @ 250µA	260nC @ 10V	6950pF @ 25V	±20V	-	230W (Tc)	4 mOhm @ 100A, 10V	-55°C ~ 200°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK752R7-60E,127	NXP	MOSFET N-CH 60V 120A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,784	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 1mA	158nC @ 10V	11180pF @ 25V	±20V	-	349W (Tc)	2.6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
RP1E075RPTR	Rohm Semiconductor	MOSFET P-CH 30V 7.5A MPT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock3,856	MOSFET (Metal Oxide)	30V	7.5A (Ta)	4V, 10V	2.5V @ 1mA	21nC @ 5V	1900pF @ 10V	±20V	-	2W (Ta)	21 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	MPT6	6-SMD, Flat Leads
AOW480	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 80V 15A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7820pF @ 40V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,056	MOSFET (Metal Oxide)	80V	15A (Ta), 180A (Tc)	7V, 10V	4V @ 250µA	140nC @ 10V	7820pF @ 40V	±25V	-	1.9W (Ta), 333W (Tc)	4.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IPB80N04S2H4ATMA2	Infineon Technologies	MOSFET N-CHANNEL_30/40V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,808	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPI70N10S3L12AKSA1	Infineon Technologies	MOSFET N-CH 100V 70A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 12.1 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,640	MOSFET (Metal Oxide)	100V	70A (Tc)	4.5V, 10V	2.4V @ 83µA	80nC @ 10V	5550pF @ 25V	±20V	-	125W (Tc)	12.1 mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
SKI03036	Sanken	MOSFET N-CH 30V 80A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 650µA Gate Charge (Qg) (Max) @ Vgs: 38.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 57A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,280	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.5V @ 650µA	38.8nC @ 10V	2460pF @ 15V	±20V	-	90W (Tc)	3.7 mOhm @ 57A, 10V	150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN038-100K,518	Nexperia USA Inc.	MOSFET N-CH 100V SOT96-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Tc) Rds On (Max) @ Id, Vgs: 38 mOhm @ 5.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,336	MOSFET (Metal Oxide)	100V	-	10V	4V @ 1mA	43nC @ 10V	1740pF @ 25V	±20V	-	3.5W (Tc)	38 mOhm @ 5.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BUK9Y43-60E,115	Nexperia USA Inc.	MOSFET N-CH 60V 22A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 41 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock3,760	MOSFET (Metal Oxide)	60V	22A (Tc)	5V	2.1V @ 1mA	8.2nC @ 5V	880pF @ 25V	±10V	-	45W (Tc)	41 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
FDP12N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 11.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1315pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock17,808	MOSFET (Metal Oxide)	500V	11.5A (Tc)	10V	5V @ 250µA	30nC @ 10V	1315pF @ 25V	±30V	-	165W (Tc)	650 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IPA50R280CEXKSA2	Infineon Technologies	MOSFET N-CH 500V 7.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30.4W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.2A, 13V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock21,768	MOSFET (Metal Oxide)	500V	7.5A (Tc)	13V	3.5V @ 350µA	32.6nC @ 10V	773pF @ 100V	±20V	-	30.4W (Tc)	280 mOhm @ 4.2A, 13V	-40°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
IPB100N12S305ATMA1	Infineon Technologies	N-CHANNEL_100+ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Stock5,792	MOSFET (Metal Oxide)	120V	100A (Tc)	10V	4V @ 240µA	185nC @ 10V	11570pF @ 25V	±20V	-	300W (Tc)	5.1 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
STB36NM60ND	STMicroelectronics	MOSFET N-CH 600V 29A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,352	MOSFET (Metal Oxide)	600V	29A (Tc)	10V	5V @ 250µA	80.4nC @ 10V	2785pF @ 50V	±25V	-	190W (Tc)	110 mOhm @ 14.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFH8316TRPBF	Infineon Technologies	MOSFET N-CH 30V 27A PQFN5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 59W (Tc) Rds On (Max) @ Id, Vgs: 2.95 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock28,812	MOSFET (Metal Oxide)	30V	27A (Ta), 50A (Tc)	4.5V, 10V	2.2V @ 50µA	59nC @ 10V	3610pF @ 10V	±20V	-	3.6W (Ta), 59W (Tc)	2.95 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
SIHFR430ATRR-GE3	Vishay Siliconix	MOSFET N-CH 500V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	5A (Tc)	10V	4.5V @ 250µA	24 nC @ 10 V	490 pF @ 25 V	±30V	-	110W (Tc)	1.7Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
RJK0213DPA-00-J53	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJE8404_R1_00001	Panjit International Inc.	30V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 600mA, 4,5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Stock5,580	MOSFET (Metal Oxide)	30 V	600mA (Ta)	1.8V, 4.5V	1.3V @ 250µA	1.5 nC @ 4.5 V	93 pF @ 15 V	±8V	-	300mW (Ta)	220mOhm @ 600mA, 4,5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
AM2328NE-T1-PF-ML	MOSLEADER	Single N 20V 6.5A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVMFS5C420NWFT1G	onsemi	POWER MOSFET, N-CHANNEL, SO8FL, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 268A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,500	MOSFET (Metal Oxide)	40 V	43A (Ta), 268A (Tc)	10V	4V @ 200µA	82 nC @ 10 V	5340 pF @ 20 V	±20V	-	3.8W (Ta), 150W (Tc)	1.1mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NX138AKHH	Nexperia USA Inc.	NX138AKH/SOT8001/DFN0606-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta), 2.3W (Tc) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 190mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN0606-3 Package / Case: 3-XFDFN	Package: -	Stock5,772	MOSFET (Metal Oxide)	60 V	260mA (Ta)	2.5V, 10V	1.5V @ 250µA	0.6 nC @ 10 V	15 pF @ 30 V	±20V	-	360mW (Ta), 2.3W (Tc)	4.2Ohm @ 190mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN0606-3	3-XFDFN
IPA65R420CFDXKSA2	Infineon Technologies	MOSFET N-CH 650V 8.7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31.2W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: -	Stock1,500	MOSFET (Metal Oxide)	650 V	8.7A (Tc)	10V	4.5V @ 300µA	31.5 nC @ 10 V	870 pF @ 100 V	±20V	-	31.2W (Tc)	420mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPB60R280CFD7ATMA1	Infineon Technologies	MOSFET N-CH 600V 9A TO263-3-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 51W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock3,000	MOSFET (Metal Oxide)	600 V	9A (Tc)	10V	4.5V @ 180µA	18 nC @ 10 V	807 pF @ 400 V	±20V	-	51W (Tc)	280mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NTMFS3D0N08XT1G	onsemi	T10 80V STD NCH MOSFET SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.6V @ 184µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 133W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	154A (Tc)	6V, 10V	3.6V @ 184µA	45 nC @ 10 V	3200 pF @ 40 V	±20V	-	133W (Tc)	2.6mOhm @ 37A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
PJQ5443-AU_R2_000A1	Panjit International Inc.	40V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060-8 Package / Case: 8-PowerVDFN	Package: -	Stock23,760	MOSFET (Metal Oxide)	40 V	9A (Ta), 50A (Tc)	4.5V, 10V	2.5V @ 250µA	23 nC @ 4.5 V	2767 pF @ 25 V	±20V	-	2W (Ta), 63W (Tc)	12mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060-8	8-PowerVDFN
XP202A0003MR-G	Torex Semiconductor Ltd	MOSFET P-CH 30V 3A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W Rds On (Max) @ Id, Vgs: 45mOhm @ 1.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock300	MOSFET (Metal Oxide)	30 V	5A (Tj)	4V, 10V	2.6V @ 1mA	10 nC @ 10 V	435 pF @ 10 V	±20V	-	1W	45mOhm @ 1.5A, 10V	150°C	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
R6515KNZC8	Rohm Semiconductor	MOSFET N-CH 650V 15A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 430µA Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	15A (Tc)	10V	5V @ 430µA	27.5 nC @ 10 V	1050 pF @ 25 V	±20V	-	60W (Tc)	315mOhm @ 6.5A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
NTMFS3D5N08XT1G	onsemi	T10 80V STD NCH MOSFET SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.6V @ 153µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	135A (Tc)	6V, 10V	3.6V @ 153µA	38 nC @ 10 V	2680 pF @ 40 V	±20V	-	119W (Tc)	3mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads