Page 517 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IXFC14N60P
IXYS

MOSFET N-CH 600V 8A ISOPLUS220

Package: ISOPLUS220?

Stock5,824
ISL9N303AP3
Fairchild/ON Semiconductor

MOSFET N-CH 30V 75A TO-220AB

Package: TO-220-3

Stock16,080
FQA34N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 34A TO-3P

Package: TO-3P-3, SC-65-3

Stock103,704
IRFR13N20DTRLP
Infineon Technologies

MOSFET N-CH 200V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,960
BUK725R0-40C,118
Nexperia USA Inc.

MOSFET N-CH 40V 75A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,872
STF16N65M5
STMicroelectronics

MOSFET N-CH 650V 12A TO-220FP

Package: TO-220-3 Full Pack

Stock392,544
STI175N4F6AG
STMicroelectronics

MOSFET N-CH 40V 120A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,888
BSZ060NE2LS
Infineon Technologies

MOSFET N-CH 25V 12A TSDSON-8

Package: 8-PowerTDFN

Stock327,732
IXTT3N200P3HV
IXYS

2000V TO 3000V POLAR3 POWER MOSF

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock5,936
IXTT75N10L2
IXYS

MOSFET N-CH 100V 75A TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4,016
STL51N3LLH5
STMicroelectronics

MOSFET N-CH 30V 51A POWERFLAT56

Package: 8-PowerSMD, Flat Leads

Stock5,360
STP110N55F6
STMicroelectronics

MOSFET N CH 55V 110A TO-220

Package: TO-220-3

Stock828,564
IPD80R450P7ATMA1
Infineon Technologies

MOSFET N-CH 800V 11A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock25,338
1HP04CH-TL-W
ON Semiconductor

MOSFET P-CH 100V 0.17A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,328
SQM120N04-1M7L_GE3
Vishay Siliconix

MOSFET N-CH 40V 120A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock16,068
IRFH8334TRPBF
Infineon Technologies

MOSFET N-CH 30V 44A 5X6 PQFN

Package: 8-PowerTDFN

Stock10,560
RUQ050N02TR
Rohm Semiconductor

MOSFET N-CH 20V 5A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock1,028,256
DMT10H9M9LCT
Diodes Incorporated

MOSFET BVDSS: 61V~100V TO220AB T

Package: -

Request a Quote
AOWF10N60C
Alpha & Omega Semiconductor Inc.

N

Package: -

Request a Quote
SIS126DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 12A/45.1A PPAK

Package: -

Stock20,880

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFC14N60P	IXYS	MOSFET N-CH 600V 8A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 630 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock5,824	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	5.5V @ 2.5mA	36nC @ 10V	2500pF @ 25V	±30V	-	125W (Tc)	630 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
ISL9N303AP3	Fairchild/ON Semiconductor	MOSFET N-CH 30V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 215W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock16,080	MOSFET (Metal Oxide)	30V	75A (Tc)	4.5V, 10V	3V @ 250µA	172nC @ 10V	7000pF @ 15V	±20V	-	215W (Tc)	3.2 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQA34N25	Fairchild/ON Semiconductor	MOSFET N-CH 250V 34A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2750pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock103,704	MOSFET (Metal Oxide)	250V	34A (Tc)	10V	5V @ 250µA	80nC @ 10V	2750pF @ 25V	±30V	-	245W (Tc)	85 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IRFR13N20DTRLP	Infineon Technologies	MOSFET N-CH 200V 13A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,960	MOSFET (Metal Oxide)	200V	13A (Tc)	10V	5.5V @ 250µA	38nC @ 10V	830pF @ 25V	±30V	-	110W (Tc)	235 mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK725R0-40C,118	Nexperia USA Inc.	MOSFET N-CH 40V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,872	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	60nC @ 10V	3820pF @ 25V	±20V	-	157W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STF16N65M5	STMicroelectronics	MOSFET N-CH 650V 12A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock392,544	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	5V @ 250µA	45nC @ 10V	1250pF @ 100V	±25V	-	25W (Tc)	299 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STI175N4F6AG	STMicroelectronics	MOSFET N-CH 40V 120A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7735pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,888	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4.5V @ 250µA	130nC @ 10V	7735pF @ 20V	±20V	-	190W (Tc)	2.7 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2Pak, TO-262AA
BSZ060NE2LS	Infineon Technologies	MOSFET N-CH 25V 12A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock327,732	MOSFET (Metal Oxide)	25V	12A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	9.1nC @ 10V	670pF @ 12V	±20V	-	2.1W (Ta), 26W (Tc)	6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
IXTT3N200P3HV	IXYS	2000V TO 3000V POLAR3 POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2000V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 8 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock5,936	MOSFET (Metal Oxide)	2000V	3A (Tc)	10V	5V @ 250µA	70nC @ 10V	1860pF @ 25V	±20V	-	520W (Tc)	8 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT75N10L2	IXYS	MOSFET N-CH 100V 75A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4,016	MOSFET (Metal Oxide)	100V	75A (Tc)	10V	4.5V @ 250µA	215nC @ 10V	8100pF @ 25V	±20V	-	400W (Tc)	21 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
STL51N3LLH5	STMicroelectronics	MOSFET N-CH 30V 51A POWERFLAT56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 724pF @ 25V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock5,360	MOSFET (Metal Oxide)	30V	51A (Tc)	4.5V, 10V	2.5V @ 250µA	5nC @ 4.5V	724pF @ 25V	±22V	-	62.5W (Tc)	14.5 mOhm @ 6.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
STP110N55F6	STMicroelectronics	MOSFET N CH 55V 110A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock828,564	MOSFET (Metal Oxide)	55V	110A (Tc)	10V	4V @ 250µA	120nC @ 10V	8350pF @ 25V	±20V	-	150W (Tc)	5.2 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
IPD80R450P7ATMA1	Infineon Technologies	MOSFET N-CH 800V 11A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 220µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 500V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 73W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock25,338	MOSFET (Metal Oxide)	800V	11A (Tc)	10V	3.5V @ 220µA	24nC @ 10V	770pF @ 500V	±20V	Super Junction	73W (Tc)	450 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
1HP04CH-TL-W	ON Semiconductor	MOSFET P-CH 100V 0.17A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 18 Ohm @ 80mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,328	MOSFET (Metal Oxide)	100V	170mA (Ta)	4V, 10V	2.6V @ 100µA	0.9nC @ 10V	14pF @ 20V	±20V	-	-	18 Ohm @ 80mA, 10V	150°C (TJ)	Surface Mount	3-CPH	TO-236-3, SC-59, SOT-23-3
SQM120N04-1M7L_GE3	Vishay Siliconix	MOSFET N-CH 40V 120A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14606pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock16,068	MOSFET (Metal Oxide)	40V	120A (Tc)	4.5V, 10V	2.5V @ 250µA	285nC @ 10V	14606pF @ 20V	±20V	-	375W (Tc)	1.7 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFH8334TRPBF	Infineon Technologies	MOSFET N-CH 30V 44A 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock10,560	MOSFET (Metal Oxide)	30V	14A (Ta), 44A (Tc)	4.5V, 10V	2.35V @ 25µA	15nC @ 10V	1180pF @ 10V	±20V	-	3.2W (Ta), 30W (Tc)	9 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerTDFN
RUQ050N02TR	Rohm Semiconductor	MOSFET N-CH 20V 5A TSMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,028,256	MOSFET (Metal Oxide)	20V	5A (Ta)	1.5V, 4.5V	1.3V @ 1mA	12nC @ 4.5V	900pF @ 10V	±10V	-	1.25W (Ta)	30 mOhm @ 5A, 4.5V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
DMT10H9M9LCT	Diodes Incorporated	MOSFET BVDSS: 61V~100V TO220AB T FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 101A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	101A (Tc)	4.5V, 10V	2.5V @ 250µA	40.2 nC @ 10 V	2309 pF @ 50 V	±20V	-	2.3W (Ta), 156W (Tc)	8.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
AOWF10N60C	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262F Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	10A (Tc)	10V	4.5V @ 250µA	40 nC @ 10 V	1600 pF @ 25 V	±30V	-	28W (Tc)	750mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262F	TO-262-3 Long Leads, I2PAK, TO-262AA
SIS126DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 80V 12A/45.1A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 45.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1402 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	Package: -	Stock20,880	MOSFET (Metal Oxide)	80 V	12A (Ta), 45.1A (Tc)	7.5V, 10V	3.5V @ 250µA	32 nC @ 10 V	1402 pF @ 40 V	±20V	-	3.7W (Ta), 52W (Tc)	10.2mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
UPA2718GR-E1-AT	Renesas Electronics Corporation	P-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTPF150N65S3HF	onsemi	MOSFET N-CH 650V 24A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 540µA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	5V @ 540µA	43 nC @ 10 V	1985 pF @ 400 V	±30V	-	192W (Tc)	150mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
2SK2499-AZ	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK1285-AZ	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRLB3034PBFXKMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	195A (Tc)	4.5V, 10V	2.5V @ 250µA	162 nC @ 4.5 V	10315 pF @ 25 V	±20V	-	375W (Tc)	1.7mOhm @ 195A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
APT8030LVRG	Microchip Technology	MOSFET N-CH 800V 27A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	27A (Tc)	-	4V @ 2.5mA	510 nC @ 10 V	7900 pF @ 25 V	-	-	-	300mOhm @ 500mA, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
NVD5867NLT4G	onsemi	MOSFET N-CH 60V 6A/22A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	6A (Ta), 22A (Tc)	4.5V, 10V	2.5V @ 250µA	15 nC @ 10 V	675 pF @ 25 V	±20V	-	3.3W (Ta), 43W (Tc)	39mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
RLP03N06CLE	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-