Page 521 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BUK954R4-80E,127
NXP

MOSFET N-CH 80V 120A TO220AB

Package: TO-220-3

Stock4,880
SI7392ADP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 30A PPAK SO-8

Package: PowerPAK? SO-8

Stock7,040
NTD95N02R-001
ON Semiconductor

MOSFET N-CH 24V 12A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,224
FQP9N15
Fairchild/ON Semiconductor

MOSFET N-CH 150V 9A TO-220

Package: TO-220-3

Stock103,464
AUIRF1405ZS-7TRL
Infineon Technologies

MOSFET N-CH 55V 120A

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock6,976
IXFB210N30P3
IXYS

MOSFET N-CH 300V 210A PLUS264

Package: TO-264-3, TO-264AA

Stock6,880
STD7N90K5
STMicroelectronics

N-CHANNEL 800 V, 0.75 OHM TYP.,

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,224
IRFZ24SPBF
Vishay Siliconix

MOSFET N-CH 60V 17A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock120,012
FQP7N80C
Fairchild/ON Semiconductor

MOSFET N-CH 800V 6.6A TO-220

Package: TO-220-3

Stock155,544
IRFBF20SPBF
Vishay Siliconix

MOSFET N-CH 900V 1.7A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,072
FDMS039N08B
Fairchild/ON Semiconductor

MOSFET N-CH 80V 19.4A POWER56

Package: 8-PowerTDFN

Stock8,928
IPA90R1K2C3
Infineon Technologies

MOSFET N-CH 900V 5.1A 10-220FP

Package: TO-220-3 Full Pack

Stock22,872
DMNH6012SPSQ-13
Diodes Incorporated

MOSFET NCH 60V 50A POWERDI

Package: 8-PowerTDFN

Stock26,112
BUK9614-60E,118
Nexperia USA Inc.

MOSFET N-CH 60V 56A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock14,688
BUK9M11-40EX
Nexperia USA Inc.

MOSFET 2N-CH 40V MLFPAK

Package: SOT-1210, 8-LFPAK33

Stock16,578
EPC2014C
EPC

TRANS GAN 40V 10A BUMPED DIE

Package: Die

Stock824,184
IXTY4N65X2-TRL
IXYS

MOSFET N-CH 650V 4A TO252

Package: -

Request a Quote
STD7N95K5AG
STMicroelectronics

DISCRETE

Package: -

Request a Quote
MCU60P04A-TP
Micro Commercial Co

MOSFET

Package: -

Request a Quote
MTV16N50E
onsemi

N-CHANNEL POWER MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BUK954R4-80E,127	NXP	MOSFET N-CH 80V 120A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 17130pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,880	MOSFET (Metal Oxide)	80V	120A (Tc)	5V, 10V	2.1V @ 1mA	123nC @ 5V	17130pF @ 25V	±10V	-	349W (Tc)	4.2 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SI7392ADP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 30A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 27.5W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock7,040	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	38nC @ 10V	1465pF @ 15V	±20V	-	5W (Ta), 27.5W (Tc)	7.5 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
NTD95N02R-001	ON Semiconductor	MOSFET N-CH 24V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 86W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,224	MOSFET (Metal Oxide)	24V	12A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	21nC @ 4.5V	2400pF @ 20V	±20V	-	1.25W (Ta), 86W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FQP9N15	Fairchild/ON Semiconductor	MOSFET N-CH 150V 9A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	150V	9A (Tc)	10V	4V @ 250µA	13nC @ 10V	410pF @ 25V	±25V	-	75W (Tc)	400 mOhm @ 4.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
AUIRF1405ZS-7TRL	Infineon Technologies	MOSFET N-CH 55V 120A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock6,976	MOSFET (Metal Oxide)	55V	120A (Tc)	10V	4V @ 150µA	230nC @ 10V	5360pF @ 25V	±20V	-	230W (Tc)	4.9 mOhm @ 88A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXFB210N30P3	IXYS	MOSFET N-CH 300V 210A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 268nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1890W (Tc) Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 105A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,880	MOSFET (Metal Oxide)	300V	210A (Tc)	10V	5V @ 8mA	268nC @ 10V	16200pF @ 25V	±20V	-	1890W (Tc)	14.5 mOhm @ 105A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PLUS264?	TO-264-3, TO-264AA
STD7N90K5	STMicroelectronics	N-CHANNEL 800 V, 0.75 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 7A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,224	MOSFET (Metal Oxide)	900V	7A	10V	5V @ 100µA	-	-	±30V	Current Sensing	-	-	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFZ24SPBF	Vishay Siliconix	MOSFET N-CH 60V 17A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock120,012	MOSFET (Metal Oxide)	60V	17A (Tc)	10V	4V @ 250µA	25nC @ 10V	640pF @ 25V	±20V	-	3.7W (Ta), 60W (Tc)	100 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQP7N80C	Fairchild/ON Semiconductor	MOSFET N-CH 800V 6.6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock155,544	MOSFET (Metal Oxide)	800V	6.6A (Tc)	10V	5V @ 250µA	35nC @ 10V	1680pF @ 25V	±30V	-	167W (Tc)	1.9 Ohm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IRFBF20SPBF	Vishay Siliconix	MOSFET N-CH 900V 1.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,072	MOSFET (Metal Oxide)	900V	1.7A (Tc)	10V	4V @ 250µA	38nC @ 10V	490pF @ 25V	±20V	-	3.1W (Ta), 54W (Tc)	8 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMS039N08B	Fairchild/ON Semiconductor	MOSFET N-CH 80V 19.4A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock8,928	MOSFET (Metal Oxide)	80V	19.4A (Ta), 100A (Tc)	10V	4.5V @ 250µA	100nC @ 10V	7600pF @ 40V	±20V	-	2.5W (Ta), 104W (Tc)	3.9 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
IPA90R1K2C3	Infineon Technologies	MOSFET N-CH 900V 5.1A 10-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 310µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock22,872	MOSFET (Metal Oxide)	900V	5.1A (Tc)	10V	3.5V @ 310µA	28nC @ 10V	710pF @ 100V	±20V	-	31W (Tc)	1.2 Ohm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
DMNH6012SPSQ-13	Diodes Incorporated	MOSFET NCH 60V 50A POWERDI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1926pF @ 30V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock26,112	MOSFET (Metal Oxide)	60V	50A (Tc)	-	4V @ 250µA	35.2nC @ 10V	1926pF @ 30V	-	-	1.6W (Ta)	11 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
BUK9614-60E,118	Nexperia USA Inc.	MOSFET N-CH 60V 56A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2651pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,688	MOSFET (Metal Oxide)	60V	56A (Tc)	5V	2.1V @ 1mA	20.5nC @ 5V	2651pF @ 25V	±10V	-	96W (Tc)	12.8 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK9M11-40EX	Nexperia USA Inc.	MOSFET 2N-CH 40V MLFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1721pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33	Package: SOT-1210, 8-LFPAK33	Stock16,578	MOSFET (Metal Oxide)	40V	53A (Tc)	5V, 10V	2.1V @ 1mA	13.4nC @ 5V	1721pF @ 25V	±10V	-	62W (Tc)	9 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33
EPC2014C	EPC	TRANS GAN 40V 10A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (5-Solder Bar) Package / Case: Die	Package: Die	Stock824,184	GaNFET (Gallium Nitride)	40V	10A (Ta)	5V	2.5V @ 2mA	2.5nC @ 5V	300pF @ 20V	+6V, -4V	-	-	16 mOhm @ 10A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die Outline (5-Solder Bar)	Die
IXTY4N65X2-TRL	IXYS	MOSFET N-CH 650V 4A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	4A (Tc)	10V	5V @ 250µA	8.3 nC @ 10 V	455 pF @ 25 V	±30V	-	80W (Tc)	850mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
STD7N95K5AG	STMicroelectronics	DISCRETE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	950 V	9A (Tc)	10V	5V @ 100µA	9.6 nC @ 10 V	430 pF @ 100 V	±30V	-	110W (Tc)	1.25Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
MCU60P04A-TP	Micro Commercial Co	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 104.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 69W (Tj) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	104.3 nC @ 10 V	4766 pF @ 20 V	±20V	-	69W (Tj)	10mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
MTV16N50E	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ISZ034N06LM5ATMA1	Infineon Technologies	MOSFET N-CH 60V 19A/112A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 112A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-26 Package / Case: 8-PowerTDFN	Package: -	Stock18,780	MOSFET (Metal Oxide)	60 V	19A (Ta), 112A (Tc)	4.5V, 10V	2.3V @ 36µA	53 nC @ 10 V	3500 pF @ 30 V	±20V	-	2.5W (Ta), 83W (Tc)	3.4mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8-26	8-PowerTDFN
BSS138B-TP	Micro Commercial Co	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Tj) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	600mA (Ta)	4.5V, 10V	1.5V @ 1mA	1.65 nC @ 10 V	60 pF @ 25 V	±20V	-	830mW (Tj)	2.5Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
TSM070NH04CV-RGG	Taiwan Semiconductor Corporation	40V, 54A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3.1x3.1) Package / Case: 8-PowerWDFN	Package: -	Stock29,712	MOSFET (Metal Oxide)	40 V	14A (Ta), 54A (Tc)	7V, 10V	3.6V @ 250µA	21 nC @ 10 V	1233 pF @ 25 V	±20V	-	36W (Tc)	7mOhm @ 27A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (3.1x3.1)	8-PowerWDFN
MTA2N60E	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUK3F00-50WDFE-518	Nexperia USA Inc.	IC 9675 AUTO 64QFP FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOD409G	Alpha & Omega Semiconductor Inc.	P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	9A (Ta), 28A (Tc)	4.5V, 10V	2.5V @ 250µA	65 nC @ 10 V	2350 pF @ 30 V	±20V	-	6.2W (Ta), 60W (Tc)	40mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SSF7320	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 0.8A, 20V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 450mW Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-723 Package / Case: SOT-723	Package: -	Stock47,580	MOSFET (Metal Oxide)	20 V	800mA (Ta)	1.5V, 4.5V	1.2V @ 250µA	1 nC @ 4.5 V	75 pF @ 10 V	±12V	-	450mW	300mOhm @ 500mA, 4.5V	-55°C ~ 150°C	Surface Mount	SOT-723	SOT-723
SQ4401EY-T1_BE3	Vishay Siliconix	MOSFET P-CH 40V 17.3A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.14W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock42,420	MOSFET (Metal Oxide)	40 V	17.3A (Tc)	4.5V, 10V	2.5V @ 250µA	115 nC @ 10 V	4250 pF @ 20 V	±20V	-	7.14W (Tc)	14mOhm @ 10.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)