Page 519 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPD30N03S2L20GBTMA1
Infineon Technologies

MOSFET N-CH 30V 30A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,968
BSC883N03MSGATMA1
Infineon Technologies

MOSFET N-CH 34V 19A TDSON-8

Package: 8-PowerTDFN

Stock5,312
IRL540NSTRRPBF
Infineon Technologies

MOSFET N-CH 100V 36A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,008
IRFB3507
Infineon Technologies

MOSFET N-CH 75V 97A TO-220AB

Package: TO-220-3

Stock3,344
AO4588
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 20A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock390,420
SI7100DN-T1-E3
Vishay Siliconix

MOSFET N-CH 8V 35A 1212-8

Package: PowerPAK? 1212-8

Stock72,432
IXFV110N10P
IXYS

MOSFET N-CH 100V 110A PLUS220

Package: TO-220-3, Short Tab

Stock5,360
BSS123_D87Z
Fairchild/ON Semiconductor

MOSFET N-CH 100V 170MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock6,928
PHB101NQ04T,118
NXP

MOSFET N-CH 40V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,328
IPT012N06NATMA1
Infineon Technologies

MOSFET N-CH 60V 240MA 8HSOF

Package: 8-PowerSFN

Stock3,280
APT30M19JVR
Microsemi Corporation

MOSFET N-CH 300V 130A SOT-227

Package: SOT-227-4, miniBLOC

Stock6,336
IXFT23N60Q
IXYS

MOSFET N-CH 600V 23A TO-268(D3)

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4,928
FCH099N65S3_F155
Fairchild/ON Semiconductor

SUPERFET3 650V,99 MOHM, TO247 PK

Package: -

Stock4,560
SIHB10N40D-GE3
Vishay Siliconix

MOSFET N-CH 400V 10A DPAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,584
STD7N52DK3
STMicroelectronics

MOSFET N-CH 525V 6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock390,000
SI1308EDL-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 1.4A SOT323

Package: SC-70, SOT-323

Stock978,840
AON1611
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 4A 6DFN

Package: 6-PowerUFDFN

Stock3,920
IRL1404PBF
Infineon Technologies

MOSFET N-CH 40V 160A TO-220AB

Package: TO-220-3

Stock21,552
STB30N65M5
STMicroelectronics

MOSFET N-CH 650V 22A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,000
SI4048DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 19.3A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,408

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPD30N03S2L20GBTMA1	Infineon Technologies	MOSFET N-CH 30V 30A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 23µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,968	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	2V @ 23µA	19nC @ 10V	700pF @ 25V	±20V	-	60W (Tc)	20 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
BSC883N03MSGATMA1	Infineon Technologies	MOSFET N-CH 34V 19A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 34V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,312	MOSFET (Metal Oxide)	34V	19A (Ta), 98A (Tc)	4.5V, 10V	2V @ 250µA	41nC @ 10V	3200pF @ 15V	±20V	-	2.5W (Ta), 57W (Tc)	3.8 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IRL540NSTRRPBF	Infineon Technologies	MOSFET N-CH 100V 36A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 44 mOhm @ 18A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,008	MOSFET (Metal Oxide)	100V	36A (Tc)	4V, 10V	2V @ 250µA	74nC @ 5V	1800pF @ 25V	±16V	-	3.8W (Ta), 140W (Tc)	44 mOhm @ 18A, 10V	-	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFB3507	Infineon Technologies	MOSFET N-CH 75V 97A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,344	MOSFET (Metal Oxide)	75V	97A (Tc)	10V	4V @ 100µA	130nC @ 10V	3540pF @ 50V	±20V	-	190W (Tc)	8.8 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AO4588	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 20A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock390,420	MOSFET (Metal Oxide)	30V	20A (Ta)	4.5V, 10V	2.4V @ 250µA	50nC @ 10V	2940pF @ 15V	±20V	-	3.1W (Ta)	4.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI7100DN-T1-E3	Vishay Siliconix	MOSFET N-CH 8V 35A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 3810pF @ 4V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 15A, 4.5V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock72,432	MOSFET (Metal Oxide)	8V	35A (Tc)	2.5V, 4.5V	1V @ 250µA	105nC @ 8V	3810pF @ 4V	±8V	-	3.8W (Ta), 52W (Tc)	3.5 mOhm @ 15A, 4.5V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
IXFV110N10P	IXYS	MOSFET N-CH 100V 110A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock5,360	MOSFET (Metal Oxide)	100V	110A (Tc)	10V	5V @ 4mA	110nC @ 10V	3550pF @ 25V	±20V	-	480W (Tc)	15 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS220	TO-220-3, Short Tab
BSS123_D87Z	Fairchild/ON Semiconductor	MOSFET N-CH 100V 170MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,928	MOSFET (Metal Oxide)	100V	170mA (Ta)	4.5V, 10V	2V @ 1mA	2.5nC @ 10V	73pF @ 25V	±20V	-	360mW (Ta)	6 Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
PHB101NQ04T,118	NXP	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,328	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	36.6nC @ 10V	2020pF @ 25V	±20V	-	157W (Tc)	8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPT012N06NATMA1	Infineon Technologies	MOSFET N-CH 60V 240MA 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 143µA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock3,280	MOSFET (Metal Oxide)	60V	240A (Tc)	6V, 10V	3.3V @ 143µA	124nC @ 10V	9750pF @ 30V	±20V	-	214W (Tc)	1.2 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
APT30M19JVR	Microsemi Corporation	MOSFET N-CH 300V 130A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 130A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 975nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 21600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,336	MOSFET (Metal Oxide)	300V	130A	10V	4V @ 5mA	975nC @ 10V	21600pF @ 25V	±30V	-	700W (Tc)	19 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
IXFT23N60Q	IXYS	MOSFET N-CH 600V 23A TO-268(D3) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4,928	MOSFET (Metal Oxide)	600V	23A (Tc)	10V	4.5V @ 4mA	90nC @ 10V	3300pF @ 25V	±30V	-	400W (Tc)	320 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
FCH099N65S3_F155	Fairchild/ON Semiconductor	SUPERFET3 650V,99 MOHM, TO247 PK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,560	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHB10N40D-GE3	Vishay Siliconix	MOSFET N-CH 400V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 526pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,584	MOSFET (Metal Oxide)	400V	10A (Tc)	10V	5V @ 250µA	30nC @ 10V	526pF @ 100V	±30V	-	147W (Tc)	600 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD7N52DK3	STMicroelectronics	MOSFET N-CH 525V 6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock390,000	MOSFET (Metal Oxide)	525V	6A (Tc)	10V	4.5V @ 50µA	33nC @ 10V	870pF @ 50V	±30V	-	90W (Tc)	1.15 Ohm @ 3A, 10V	150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SI1308EDL-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 1.4A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 400mW (Ta), 500mW (Tc) Rds On (Max) @ Id, Vgs: 132 mOhm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock978,840	MOSFET (Metal Oxide)	30V	1.4A (Tc)	2.5V, 10V	1.5V @ 250µA	4.1nC @ 10V	105pF @ 15V	±12V	-	400mW (Ta), 500mW (Tc)	132 mOhm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
AON1611	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 4A 6DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 58 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN (1.6x1.6) Package / Case: 6-PowerUFDFN	Package: 6-PowerUFDFN	Stock3,920	MOSFET (Metal Oxide)	20V	4A (Ta)	1.5V, 4.5V	900mV @ 250µA	10nC @ 4.5V	550pF @ 10V	±8V	-	1.8W (Ta)	58 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN (1.6x1.6)	6-PowerUFDFN
IRL1404PBF	Infineon Technologies	MOSFET N-CH 40V 160A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6590pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock21,552	MOSFET (Metal Oxide)	40V	160A (Tc)	4.3V, 10V	3V @ 250µA	140nC @ 5V	6590pF @ 25V	±20V	-	200W (Tc)	4 mOhm @ 95A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STB30N65M5	STMicroelectronics	MOSFET N-CH 650V 22A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 139 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,000	MOSFET (Metal Oxide)	650V	22A (Tc)	10V	5V @ 250µA	64nC @ 10V	2880pF @ 100V	±25V	-	140W (Tc)	139 mOhm @ 11A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4048DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 19.3A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,408	MOSFET (Metal Oxide)	30V	19.3A (Tc)	10V	3V @ 250µA	51nC @ 10V	2060pF @ 15V	±20V	-	2.5W (Ta), 5.7W (Tc)	85 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PSMN2R8-40PS,127	Nexperia USA Inc.	MOSFET N-CH 40V TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4491pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 211W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock20,892	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	4V @ 1mA	71nC @ 10V	4491pF @ 20V	±20V	-	211W (Tc)	2.8 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFR110PBF	Vishay Siliconix	MOSFET N-CH 100V 4.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,928	MOSFET (Metal Oxide)	100V	4.3A (Tc)	10V	4V @ 250µA	8.3nC @ 10V	180pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	540 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SI5476DU-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 12A PPAK CHIPFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PowerPak? ChipFet (3x1.9) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock47,250	MOSFET (Metal Oxide)	60V	12A (Tc)	4.5V, 10V	3V @ 250µA	32nC @ 10V	1100pF @ 30V	±20V	-	3.1W (Ta), 31W (Tc)	34 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerPak? ChipFet (3x1.9)	8-PowerVDFN
NTR4171PT1G	ON Semiconductor	MOSFET P-CH 30V 2.2A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 480mW (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock421,716	MOSFET (Metal Oxide)	30V	2.2A (Ta)	2.5V, 10V	1.4V @ 250µA	15.6nC @ 10V	720pF @ 15V	±12V	-	480mW (Ta)	75 mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
DMTH84M1SPS-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI50 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4209 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	100A (Tc)	6V, 10V	4V @ 250µA	63 nC @ 10 V	4209 pF @ 40 V	±20V	-	1.6W (Ta), 136W (Tc)	4mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
MCG50P03-TP	Micro Commercial Co	P-CHANNEL MOSFET,DFN3333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 111.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6464 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 83W Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333 Package / Case: 8-VDFN Exposed Pad	Package: -	Stock3,471	MOSFET (Metal Oxide)	30 V	50A	4.5V, 10V	2.8V @ 250µA	111.7 nC @ 10 V	6464 pF @ 15 V	±25V	-	83W	6.2mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN3333	8-VDFN Exposed Pad
2SJ659-DL-E	onsemi	PCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PMPB07R0UNX	Nexperia USA Inc.	MOSFET N-CH 20V 11.6A DFN2020M-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1696 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 11.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock10,353	MOSFET (Metal Oxide)	20 V	11.6A (Ta)	-	900mV @ 250µA	30 nC @ 4.5 V	1696 pF @ 10 V	±12V	-	1.9W (Ta), 12.5W (Tc)	9mOhm @ 11.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad