Page 520 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLIB4343
Infineon Technologies

MOSFET N-CH 55V 19A TO220FP

Package: TO-220-3 Full Pack

Stock5,808
IRF9410TR
Infineon Technologies

MOSFET N-CH 30V 7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock97,908
IRF9520NL
Infineon Technologies

MOSFET P-CH 100V 6.8A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock39,528
AO4421L
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 60V 6.2A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,200
AOI482
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 32A TO251A

Package: TO-251-3 Stub Leads, IPak

Stock16,788
SI1065X-T1-E3
Vishay Siliconix

MOSFET P-CH 12V 1.18A SOT563F

Package: SOT-563, SOT-666

Stock17,268
PH16030L,115
NXP

MOSFET N-CH 30V 38A LFPAK

Package: SC-100, SOT-669

Stock2,880
BSC0702LSATMA1
Infineon Technologies

MOSFET N-CH 8TDSON

Package: -

Stock2,736
IXFT140N10P
IXYS

MOSFET N-CH 100V 140A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4,928
IXFQ14N80P
IXYS

MOSFET N-CH 800V 14A TO-3P

Package: TO-3P-3, SC-65-3

Stock2,912
IXTP1N80P
IXYS

MOSFET N-CH 800V 1A TO-220

Package: TO-220-3

Stock103,464
AOWF8N50
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 8A TO262F

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,320
IXFN73N30
IXYS

MOSFET N-CH 300V 73A SOT-227B

Package: SOT-227-4, miniBLOC

Stock6,492
SN7002NH6327XTSA1
Infineon Technologies

MOSFET N-CH 60V 200MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock25,548
ZVP4424ZTA
Diodes Incorporated

MOSFET P-CH 240V 0.2A SOT89

Package: TO-243AA

Stock19,068
DMG4712SSS-13
Diodes Incorporated

MOSFET N-CH 30V 11.2A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,776
IRLML2502TRPBF
Infineon Technologies

MOSFET N-CH 20V 4.2A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock9,491,748
IXTP60N020T
IXYS

MOSFET N-CH TO220AB

Package: -

Request a Quote
EPC7001BC
EPC Space, LLC

GAN FET HEMT 40V30A COTS 4FSMD-B

Package: -

Stock450
BSZ0909LSATMA1
Infineon Technologies

MOSFET N-CH 30V 19A/40A TSDSON

Package: -

Stock14,352

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLIB4343	Infineon Technologies	MOSFET N-CH 55V 19A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,808	MOSFET (Metal Oxide)	55V	19A (Tc)	4.5V, 10V	1V @ 250µA	42nC @ 10V	740pF @ 50V	±20V	-	39W (Tc)	50 mOhm @ 4.7A, 10V	-40°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRF9410TR	Infineon Technologies	MOSFET N-CH 30V 7A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock97,908	MOSFET (Metal Oxide)	30V	7A (Ta)	4.5V, 10V	1V @ 250µA	27nC @ 10V	550pF @ 25V	±20V	-	2.5W (Ta)	30 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF9520NL	Infineon Technologies	MOSFET P-CH 100V 6.8A TO-262 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock39,528	MOSFET (Metal Oxide)	100V	6.8A (Tc)	10V	4V @ 250µA	27nC @ 10V	350pF @ 25V	±20V	-	3.8W (Ta), 48W (Tc)	480 mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
AO4421L	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 60V 6.2A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,200	MOSFET (Metal Oxide)	60V	6.2A (Ta)	4.5V, 10V	3V @ 250µA	55nC @ 10V	2900pF @ 30V	±20V	-	3.1W (Ta)	40 mOhm @ 6.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AOI482	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 32A TO251A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock16,788	MOSFET (Metal Oxide)	100V	5A (Ta), 32A (Tc)	4.5V, 10V	2.7V @ 250µA	44nC @ 10V	2000pF @ 50V	±20V	-	2.5W (Ta), 100W (Tc)	37 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPak
SI1065X-T1-E3	Vishay Siliconix	MOSFET P-CH 12V 1.18A SOT563F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 236mW (Ta) Rds On (Max) @ Id, Vgs: 156 mOhm @ 1.18A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock17,268	MOSFET (Metal Oxide)	12V	-	1.8V, 4.5V	950mV @ 250µA	10.8nC @ 5V	480pF @ 6V	±8V	-	236mW (Ta)	156 mOhm @ 1.18A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-6	SOT-563, SOT-666
PH16030L,115	NXP	MOSFET N-CH 30V 38A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 12V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 41.6W (Tc) Rds On (Max) @ Id, Vgs: 16.9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,880	MOSFET (Metal Oxide)	30V	38A (Tc)	4.5V, 10V	2V @ 1mA	8.2nC @ 4.5V	680pF @ 12V	±15V	-	41.6W (Tc)	16.9 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BSC0702LSATMA1	Infineon Technologies	MOSFET N-CH 8TDSON FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,736	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFT140N10P	IXYS	MOSFET N-CH 100V 140A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4,928	MOSFET (Metal Oxide)	100V	140A (Tc)	10V	5V @ 4mA	155nC @ 10V	4700pF @ 25V	±20V	-	600W (Tc)	11 mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFQ14N80P	IXYS	MOSFET N-CH 800V 14A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 720 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock2,912	MOSFET (Metal Oxide)	800V	14A (Tc)	10V	5.5V @ 4mA	61nC @ 10V	3900pF @ 25V	±30V	-	400W (Tc)	720 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTP1N80P	IXYS	MOSFET N-CH 800V 1A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 14 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	800V	1A (Tc)	10V	4V @ 50µA	9nC @ 10V	250pF @ 25V	±20V	-	42W (Tc)	14 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
AOWF8N50	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 500V 8A TO262F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1042pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 27.8W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262F Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,320	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	4.5V @ 250µA	28nC @ 10V	1042pF @ 25V	±30V	-	27.8W (Tc)	850 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262F	TO-262-3 Long Leads, I2Pak, TO-262AA
IXFN73N30	IXYS	MOSFET N-CH 300V 73A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 73A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,492	MOSFET (Metal Oxide)	300V	73A	10V	4V @ 8mA	360nC @ 10V	9000pF @ 25V	±20V	-	520W (Tc)	45 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
SN7002NH6327XTSA1	Infineon Technologies	MOSFET N-CH 60V 200MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock25,548	MOSFET (Metal Oxide)	60V	200mA (Ta)	4.5V, 10V	1.8V @ 26µA	1.5nC @ 10V	45pF @ 25V	±20V	-	360mW (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
ZVP4424ZTA	Diodes Incorporated	MOSFET P-CH 240V 0.2A SOT89 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±40V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 9 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89-3 Package / Case: TO-243AA	Package: TO-243AA	Stock19,068	MOSFET (Metal Oxide)	240V	200mA (Ta)	3.5V, 10V	2V @ 1mA	-	200pF @ 25V	±40V	-	1.5W (Ta)	9 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-89-3	TO-243AA
DMG4712SSS-13	Diodes Incorporated	MOSFET N-CH 30V 11.2A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2296pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.55W (Ta) Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,776	MOSFET (Metal Oxide)	30V	11.2A (Ta)	4.5V, 10V	2.2V @ 250µA	45.7nC @ 10V	2296pF @ 15V	±12V	Schottky Diode (Body)	1.55W (Ta)	14 mOhm @ 11.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
IRLML2502TRPBF	Infineon Technologies	MOSFET N-CH 20V 4.2A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro3?/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock9,491,748	MOSFET (Metal Oxide)	20V	4.2A (Ta)	2.5V, 4.5V	1.2V @ 250µA	12nC @ 5V	740pF @ 15V	±12V	-	1.25W (Ta)	45 mOhm @ 4.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro3?/SOT-23	TO-236-3, SC-59, SOT-23-3
IXTP60N020T	IXYS	MOSFET N-CH TO220AB FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
EPC7001BC	EPC Space, LLC	GAN FET HEMT 40V30A COTS 4FSMD-B FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock450	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSZ0909LSATMA1	Infineon Technologies	MOSFET N-CH 30V 19A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	Package: -	Stock14,352	MOSFET (Metal Oxide)	30 V	19A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	26 nC @ 10 V	1700 pF @ 15 V	±20V	-	-	3mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
MCAC40N03A-TP	Micro Commercial Co	N-CHANNEL MOSFET, DFN5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Stock11,433	MOSFET (Metal Oxide)	30 V	40A (Tc)	4.5V, 10V	2.5V @ 250µA	23.5 nC @ 10 V	1050 pF @ 15 V	±20V	-	35W	7.5mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
2SJ418-TL-E-SY	Sanyo	MOSFET P-CH 30V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IAUCN04S7L009ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 275A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5704 pF @ 20 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 129W (Tc) Rds On (Max) @ Id, Vgs: 0.91mOhm @ 88A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	Package: -	Stock3,000	MOSFET (Metal Oxide)	40 V	275A (Tj)	4.5V, 10V	1.8V @ 60µA	85 nC @ 10 V	5704 pF @ 20 V	±16V	-	129W (Tc)	0.91mOhm @ 88A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-34	8-PowerTDFN
NVMTS0D6N04CTXG	onsemi	MOSFET N-CH 40V 533A 8DFNW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 533A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta) Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	533A (Tc)	10V	4V @ 250µA	187 nC @ 10 V	11800 pF @ 20 V	±20V	-	5W (Ta)	0.48mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFNW (8.3x8.4)	8-PowerTDFN
SIR5110DP-T1-RE3	Vishay Siliconix	N-CHANNEL 100 V (D-S) MOSFET POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 47.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	13.5A (Ta), 47.6A (Tc)	7.5V, 10V	4V @ 250µA	20 nC @ 10 V	920 pF @ 50 V	±20V	-	4.8W (Ta), 59.5W (Tc)	6mOhm @ 35A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IXFP12N65X2A	IXYS	MOSFET N-CH TO220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFQ120N25X3	IXYS	MOSFET N-CHANNEL 250V 120A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: -	Stock75	MOSFET (Metal Oxide)	250 V	120A (Tc)	10V	4.5V @ 4mA	122 nC @ 10 V	7870 pF @ 25 V	±20V	-	520W (Tc)	12mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IPB015N04NGATMA1	Infineon Technologies	MOSFET N-CH 40V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock6,495	MOSFET (Metal Oxide)	40 V	120A (Tc)	10V	4V @ 200µA	250 nC @ 10 V	20000 pF @ 20 V	±20V	-	250W (Tc)	1.5mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB