Page 533 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPD60R600CPBTMA1
Infineon Technologies

MOSFET N-CH 600V 6.1A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,256
IRL3714ZSPBF
Infineon Technologies

MOSFET N-CH 20V 36A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock17,508
SSM3K17SU,LF(D
Toshiba Semiconductor and Storage

MOSFET N-CH 50V 100MA USM

Package: -

Stock7,488
SI2392DS-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 3.1A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock576,504
FDPF12N50NZT
Fairchild/ON Semiconductor

MOSFET N-CH 500V 11.5A TO-220F

Package: TO-220-3 Full Pack

Stock12,972
PHX18NQ20T,127
NXP

MOSFET N-CH 200V 8.2A TO220F

Package: TO-220-3 Full Pack, Isolated Tab

Stock5,872
HUF75329D3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 20A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,608
STD70N03L-1
STMicroelectronics

MOSFET N-CH 30V 70A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,248
IXFL32N120P
IXYS

MOSFET N-CH 1200V 24A I5-PAK

Package: ISOPLUSi5-Pak?

Stock2,432
IXTH22N50P
IXYS

MOSFET N-CH 500V 22A TO-247

Package: TO-247-3

Stock5,296
SI4632DY-T1-E3
Vishay Siliconix

MOSFET N-CH 25V 40A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock60,000
NVMFS5C430NAFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock6,912
5HN01C-TB-E
ON Semiconductor

MOSFET N-CH 50V 100MA CP3

Package: TO-236-3, SC-59, SOT-23-3

Stock501,780
STL24N65M2
STMicroelectronics

MOSFET N-CH 650V 14A POWERFLAT

Package: 8-PowerVDFN

Stock7,984
FDB035AN06A0_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 22A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,704
FQD9N25TM_F080
Fairchild/ON Semiconductor

MOSFET N-CH 250V 7.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,904
BUK9608-55A,118
Nexperia USA Inc.

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock44,472
STD13NM60N
STMicroelectronics

MOSFET N-CH 600V 11A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock529,596
CMLDM8120G-TR-PBFREE
Central Semiconductor Corp

MOSFET P-CH 20V 860MA SOT563

Package: -

Stock35,640
FQP2N40-F080
onsemi

MOSFET N-CH 400V 1.8A TO220-3

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD60R600CPBTMA1	Infineon Technologies	MOSFET N-CH 600V 6.1A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 220µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,256	MOSFET (Metal Oxide)	600V	6.1A (Tc)	10V	3.5V @ 220µA	27nC @ 10V	550pF @ 100V	±20V	-	60W (Tc)	600 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL3714ZSPBF	Infineon Technologies	MOSFET N-CH 20V 36A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock17,508	MOSFET (Metal Oxide)	20V	36A (Tc)	4.5V, 10V	2.55V @ 250µA	7.2nC @ 4.5V	550pF @ 10V	±20V	-	35W (Tc)	16 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SSM3K17SU,LF(D	Toshiba Semiconductor and Storage	MOSFET N-CH 50V 100MA USM FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,488	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI2392DS-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 3.1A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 126 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock576,504	MOSFET (Metal Oxide)	100V	3.1A (Tc)	4.5V, 10V	3V @ 250µA	10.4nC @ 10V	196pF @ 50V	±20V	-	1.25W (Ta), 2.5W (Tc)	126 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
FDPF12N50NZT	Fairchild/ON Semiconductor	MOSFET N-CH 500V 11.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 400V Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 5.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock12,972	MOSFET (Metal Oxide)	500V	11.5A (Tc)	10V	5V @ 250µA	30nC @ 400V	1235pF @ 25V	±25V	-	42W (Tc)	520 mOhm @ 5.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
PHX18NQ20T,127	NXP	MOSFET N-CH 200V 8.2A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock5,872	MOSFET (Metal Oxide)	200V	8.2A (Tc)	10V	4V @ 1mA	40nC @ 10V	1850pF @ 25V	±20V	-	30W (Tc)	180 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
HUF75329D3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 20A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,608	MOSFET (Metal Oxide)	55V	20A (Tc)	10V	4V @ 250µA	65nC @ 20V	1060pF @ 25V	±20V	-	128W (Tc)	26 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
STD70N03L-1	STMicroelectronics	MOSFET N-CH 30V 70A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,248	MOSFET (Metal Oxide)	30V	70A (Tc)	5V, 10V	1V @ 250µA	21nC @ 5V	2200pF @ 25V	±20V	-	70W (Tc)	7.3 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IXFL32N120P	IXYS	MOSFET N-CH 1200V 24A I5-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 21000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUSi5-Pak? Package / Case: ISOPLUSi5-Pak?	Package: ISOPLUSi5-Pak?	Stock2,432	MOSFET (Metal Oxide)	1200V	24A (Tc)	10V	6.5V @ 1mA	360nC @ 10V	21000pF @ 25V	±30V	-	520W (Tc)	340 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUSi5-Pak?	ISOPLUSi5-Pak?
IXTH22N50P	IXYS	MOSFET N-CH 500V 22A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock5,296	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	5.5V @ 250µA	50nC @ 10V	2630pF @ 25V	±30V	-	350W (Tc)	270 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
SI4632DY-T1-E3	Vishay Siliconix	MOSFET N-CH 25V 40A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11175pF @ 15V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock60,000	MOSFET (Metal Oxide)	25V	40A (Tc)	4.5V, 10V	2.6V @ 250µA	161nC @ 10V	11175pF @ 15V	±16V	-	3.5W (Ta), 7.8W (Tc)	2.7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NVMFS5C430NAFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock6,912	MOSFET (Metal Oxide)	40V	35A (Ta), 185A (Tc)	10V	3.5V @ 250µA	47nC @ 10V	3300pF @ 25V	±20V	-	3.8W (Ta), 106W (Tc)	1.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
5HN01C-TB-E	ON Semiconductor	MOSFET N-CH 50V 100MA CP3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 3-CP Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock501,780	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	3-CP	TO-236-3, SC-59, SOT-23-3
STL24N65M2	STMicroelectronics	MOSFET N-CH 650V 14A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,984	MOSFET (Metal Oxide)	650V	14A (Tc)	10V	4V @ 250µA	29nC @ 10V	1060pF @ 100V	±25V	-	125W (Tc)	250 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	8-PowerVDFN
FDB035AN06A0_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 22A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,704	MOSFET (Metal Oxide)	60V	22A (Ta)	10V	4V @ 250µA	124nC @ 10V	6400pF @ 25V	±20V	-	310W (Tc)	3.5 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQD9N25TM_F080	Fairchild/ON Semiconductor	MOSFET N-CH 250V 7.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,904	MOSFET (Metal Oxide)	250V	7.4A (Tc)	10V	5V @ 250µA	20nC @ 10V	700pF @ 25V	±30V	-	2.5W (Ta), 55W (Tc)	420 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9608-55A,118	Nexperia USA Inc.	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6021pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 253W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock44,472	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	92nC @ 5V	6021pF @ 25V	±15V	-	253W (Tc)	7.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD13NM60N	STMicroelectronics	MOSFET N-CH 600V 11A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock529,596	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	30nC @ 10V	790pF @ 50V	±25V	-	90W (Tc)	360 mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
CMLDM8120G-TR-PBFREE	Central Semiconductor Corp	MOSFET P-CH 20V 860MA SOT563 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V Vgs (Max): 8V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-563 Package / Case: SOT-563, SOT-666	Package: -	Stock35,640	MOSFET (Metal Oxide)	20 V	860mA (Ta)	1.8V, 4.5V	1V @ 250µA	3.56 nC @ 4.5 V	200 pF @ 16 V	8V	-	350mW (Ta)	150mOhm @ 950mA, 4.5V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563	SOT-563, SOT-666
FQP2N40-F080	onsemi	MOSFET N-CH 400V 1.8A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Ta) Rds On (Max) @ Id, Vgs: 5.8Ohm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	400 V	1.8A (Tc)	10V	5V @ 250µA	5.5 nC @ 10 V	150 pF @ 25 V	±30V	-	40W (Ta)	5.8Ohm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IRF7413ZTRPBFXTMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8-902 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock12,000	MOSFET (Metal Oxide)	30 V	13A (Ta)	4.5V, 10V	2.25V @ 250µA	14 nC @ 4.5 V	1210 pF @ 15 V	±20V	-	2.5W (Ta)	10mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8-902	8-SOIC (0.154", 3.90mm Width)
STO33N60M6	STMicroelectronics	MOSFET N-CH 600V 25A TOLL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TOLL (HV) Package / Case: 8-PowerSFN	Package: -	Stock234	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	4.75V @ 250µA	33.4 nC @ 10 V	1515 pF @ 100 V	±25V	-	230W (Tc)	125mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TOLL (HV)	8-PowerSFN
NVMFS5C612NT1G	onsemi	NFET SO8FL 60V 235A 1.5MO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 225A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	34A (Ta), 225A (Tc)	10V	4V @ 250µA	62 nC @ 10 V	4900 pF @ 25 V	±20V	-	3.8W (Ta), 167W (Tc)	1.65mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
FDBL86561-F085	onsemi	MOSFET N-CH 60V 300A 8HPSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 429W (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HPSOF Package / Case: 8-PowerSFN	Package: -	Stock29,475	MOSFET (Metal Oxide)	60 V	300A (Tc)	10V	4V @ 250µA	220 nC @ 10 V	13650 pF @ 30 V	±20V	-	429W (Tj)	1.1mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-HPSOF	8-PowerSFN
UF3C065080K4S	Qorvo	MOSFET N-CH 650V 31A TO247-4 FET Type: N-Channel Technology: - Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock39,708	-	650 V	31A (Tc)	12V	6V @ 10mA	43 nC @ 12 V	1500 pF @ 100 V	±25V	-	190W (Tc)	100mOhm @ 20A, 12V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
DMP610DLQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT23 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 186mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock9,000	MOSFET (Metal Oxide)	60 V	186mA (Ta)	5V	2V @ 1mA	0.5 nC @ 5 V	40 pF @ 25 V	±30V	-	520mW (Ta)	10Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
TSM650P03CX-RFG-ML	MOSLEADER	P-Channel -30V -4.1A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PSMN5R0-40MLHX	Nexperia USA Inc.	MOSFET N-CH 40V 85A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 85A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2649 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Ta) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: -	Stock4,500	MOSFET (Metal Oxide)	40 V	85A (Ta)	4.5V, 10V	2.15V @ 1mA	39 nC @ 10 V	2649 pF @ 20 V	±20V	-	83W (Ta)	5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)