Page 538 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPU30P06P
Infineon Technologies

MOSFET P-CH 60V 30A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,552
IRFU13N15D
Infineon Technologies

MOSFET N-CH 150V 14A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,440
IXTV230N085TS
IXYS

MOSFET N-CH 85V 230A PLUS220SMD

Package: PLUS-220SMD

Stock7,536
FDS7066ASN3
Fairchild/ON Semiconductor

MOSFET N-CH 30V 19A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock300,936
IRFZ44RSTRR
Vishay Siliconix

MOSFET N-CH 60V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,312
IPC042N03L3X1SA1
Infineon Technologies

MOSFET N-CH 30V SAWN BARE DIE

Package: Die

Stock4,592
IXFH120N25T
IXYS

MOSFET N-CH 250V 120A TO-247

Package: TO-247-3

Stock6,352
IXFT50N60X
IXYS

MOSFET N-CH 600V 50A TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock7,712
IXTA220N04T2-7
IXYS

MOSFET N-CH 40V 220A TO-263-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock7,216
SIHF12N65E-GE3
Vishay Siliconix

MOSFET N-CH 650V 12A TO-220

Package: TO-220-3 Full Pack

Stock3,312
AOWF7S65
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 7A TO262F

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,616
ES6U2T2R
Rohm Semiconductor

MOSFET N-CH 20V 1.5A WEMT6

Package: SOT-563, SOT-666

Stock3,648
IRFH5010TRPBF
Infineon Technologies

MOSFET N-CH 100V 13A 8-PQFN

Package: 8-PowerVDFN

Stock12,276
IPC50N04S5L5R5ATMA1
Infineon Technologies

N-CHANNEL_30/40V

Package: 8-PowerTDFN

Stock7,632
RF6C055BCTCR
Rohm Semiconductor

PCH -20V -5.5A MIDDLE POWER MOSF

Package: 6-SMD, Flat Leads

Stock26,178
SI2366DS-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 5.8A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock926,412
IRFZ48NPBF
Infineon Technologies

MOSFET N-CH 55V 64A TO-220AB

Package: TO-220-3

Stock784,200
IXFN64N50P
IXYS

MOSFET N-CH 500V 61A SOT-227

Package: SOT-227-4, miniBLOC

Stock6,324
CSD17506Q5A
Texas Instruments

MOSFET N-CH 30V 100A 8SON

Package: 8-PowerTDFN

Stock4,912
PSMN017-30PL,127
Nexperia USA Inc.

MOSFET N-CH 30V 32A TO220AB

Package: TO-220-3

Stock67,740

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPU30P06P	Infineon Technologies	MOSFET P-CH 60V 30A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.7mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 21.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,552	MOSFET (Metal Oxide)	60V	30A (Tc)	10V	4V @ 1.7mA	48nC @ 10V	1535pF @ 25V	±20V	-	125W (Tc)	75 mOhm @ 21.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IRFU13N15D	Infineon Technologies	MOSFET N-CH 150V 14A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 8.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,440	MOSFET (Metal Oxide)	150V	14A (Tc)	10V	5.5V @ 250µA	29nC @ 10V	620pF @ 25V	±30V	-	86W (Tc)	180 mOhm @ 8.3A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IXTV230N085TS	IXYS	MOSFET N-CH 85V 230A PLUS220SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock7,536	MOSFET (Metal Oxide)	85V	230A (Tc)	10V	4V @ 250µA	187nC @ 10V	9900pF @ 25V	±20V	-	550W (Tc)	4.4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
FDS7066ASN3	Fairchild/ON Semiconductor	MOSFET N-CH 30V 19A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock300,936	MOSFET (Metal Oxide)	30V	19A (Ta)	4.5V, 10V	3V @ 1mA	62nC @ 10V	2460pF @ 15V	±20V	-	3W (Ta)	4.8 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFZ44RSTRR	Vishay Siliconix	MOSFET N-CH 60V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,312	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 250µA	67nC @ 10V	1900pF @ 25V	±20V	-	150W (Tc)	28 mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPC042N03L3X1SA1	Infineon Technologies	MOSFET N-CH 30V SAWN BARE DIE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Sawn on foil Package / Case: Die	Package: Die	Stock4,592	MOSFET (Metal Oxide)	30V	1A (Tj)	4.5V, 10V	2.2V @ 250µA	-	-	-	-	-	50 mOhm @ 2A, 10V	-	Surface Mount	Sawn on foil	Die
IXFH120N25T	IXYS	MOSFET N-CH 250V 120A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,352	MOSFET (Metal Oxide)	250V	120A (Tc)	10V	5V @ 4mA	180nC @ 10V	11300pF @ 25V	±20V	-	890W (Tc)	23 mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFT50N60X	IXYS	MOSFET N-CH 600V 50A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 660W (Tc) Rds On (Max) @ Id, Vgs: 73 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock7,712	MOSFET (Metal Oxide)	600V	50A (Tc)	10V	4.5V @ 4mA	116nC @ 10V	4660pF @ 25V	±30V	-	660W (Tc)	73 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTA220N04T2-7	IXYS	MOSFET N-CH 40V 220A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6820pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA..7) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock7,216	MOSFET (Metal Oxide)	40V	220A (Tc)	10V	4V @ 250µA	112nC @ 10V	6820pF @ 25V	±20V	-	360W (Tc)	3.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7 (IXTA..7)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
SIHF12N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 12A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,312	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4V @ 250µA	70nC @ 10V	1224pF @ 100V	±30V	-	33W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
AOWF7S65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 7A TO262F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 434pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,616	MOSFET (Metal Oxide)	650V	7A (Tc)	10V	4V @ 250µA	9.2nC @ 10V	434pF @ 100V	±30V	-	25W (Tc)	650 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	-	TO-262-3 Long Leads, I2Pak, TO-262AA
ES6U2T2R	Rohm Semiconductor	MOSFET N-CH 20V 1.5A WEMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Vgs (Max): ±10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock3,648	MOSFET (Metal Oxide)	20V	1.5A (Ta)	1.5V, 4.5V	1V @ 1mA	1.8nC @ 4.5V	110pF @ 10V	±10V	Schottky Diode (Isolated)	700mW (Ta)	180 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	6-WEMT	SOT-563, SOT-666
IRFH5010TRPBF	Infineon Technologies	MOSFET N-CH 100V 13A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock12,276	MOSFET (Metal Oxide)	100V	13A (Ta), 100A (Tc)	10V	4V @ 150µA	98nC @ 10V	4340pF @ 25V	±20V	-	3.6W (Ta), 250W (Tc)	9 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerVDFN
IPC50N04S5L5R5ATMA1	Infineon Technologies	N-CHANNEL_30/40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1209pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,632	MOSFET (Metal Oxide)	40V	50A (Tc)	4.5V, 10V	2V @ 13µA	23nC @ 10V	1209pF @ 25V	±16V	-	42W (Tc)	5.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-33	8-PowerTDFN
RF6C055BCTCR	Rohm Semiconductor	PCH -20V -5.5A MIDDLE POWER MOSF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 25.8 mOhm @ 5.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock26,178	MOSFET (Metal Oxide)	20V	5.5A (Ta)	4.5V	1.2V @ 1mA	15.2nC @ 4.5V	1080pF @ 10V	±8V	-	1W (Tc)	25.8 mOhm @ 5.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TUMT6	6-SMD, Flat Leads
SI2366DS-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 5.8A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock926,412	MOSFET (Metal Oxide)	30V	5.8A (Tc)	10V	2.5V @ 250µA	10nC @ 10V	335pF @ 15V	±20V	-	1.25W (Ta), 2.1W (Tc)	36 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IRFZ48NPBF	Infineon Technologies	MOSFET N-CH 55V 64A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock784,200	MOSFET (Metal Oxide)	55V	64A (Tc)	10V	4V @ 250µA	81nC @ 10V	1970pF @ 25V	±20V	-	130W (Tc)	14 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFN64N50P	IXYS	MOSFET N-CH 500V 61A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 61A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,324	MOSFET (Metal Oxide)	500V	61A	10V	5.5V @ 8mA	150nC @ 10V	8700pF @ 25V	±30V	-	700W (Tc)	85 mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
CSD17506Q5A	Texas Instruments	MOSFET N-CH 30V 100A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta) Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,912	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	1.8V @ 250µA	11nC @ 4.5V	1650pF @ 15V	±20V	-	3.2W (Ta)	4 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
PSMN017-30PL,127	Nexperia USA Inc.	MOSFET N-CH 30V 32A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 552pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock67,740	MOSFET (Metal Oxide)	30V	32A (Tc)	4.5V, 10V	2.15V @ 1mA	10.7nC @ 10V	552pF @ 15V	±20V	-	45W (Tc)	17 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NVMTS1D2N08H	onsemi	MOSFET N-CH 80V 43.5A/337A 8DFNW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	43.5A (Ta), 337A (Tc)	10V	4V @ 590µA	147 nC @ 10 V	10100 pF @ 40 V	±20V	-	5W (Ta), 300W (Tc)	1.1mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFNW (8.3x8.4)	8-PowerTDFN
MCU45N10HE3-TP	Micro Commercial Co	N-CHANNEL MOSFET, DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 45A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 72W (Tj) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock5,493	MOSFET (Metal Oxide)	100 V	45A	4.5V, 10V	2.5V @ 250µA	16 nC @ 10 V	1135 pF @ 50 V	±20V	-	72W (Tj)	17mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIR681DP-T1-RE3	Vishay Siliconix	MOSFET P-CH 80V 17.6A/71.9A PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	17.6A (Ta), 71.9A (Tc)	-	2.6V @ 250µA	105 nC @ 10 V	4850 pF @ 40 V	±20V	-	6.25W (Ta), 104W (Tc)	11.2mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
NTBGS002N06C	onsemi	POWER MOSFET, 60 V, 2.2 M?, 211 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 211A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs(th) (Max) @ Id: 4V @ 225µA Gate Charge (Qg) (Max) @ Vgs: 62.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 178W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 45A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	30A (Ta), 211A (Tc)	10V, 12V	4V @ 225µA	62.1 nC @ 10 V	4620 pF @ 30 V	±20V	-	3.7W (Ta), 178W (Tc)	2.1mOhm @ 45A, 12V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-7, D2PAK (6 Leads + Tab)
AUIRLR2905ZTRL	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	42A (Tc)	-	3V @ 250µA	35 nC @ 5 V	1570 pF @ 25 V	-	-	110W (Tc)	13.5mOhm @ 36A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPDQ65R017CFD7AXTMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	136A (Tc)	10V	4.5V @ 3.08mA	236 nC @ 10 V	12338 pF @ 400 V	±20V	-	694W (Tc)	17mOhm @ 61.6A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
C3M0120100J-TR	Wolfspeed, Inc.	SIC, MOSFET, 120M, 1000V, TO-263 FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V Vgs (Max): +15V, -4V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1000 V	22A (Tc)	15V	3.5V @ 3mA	18 nC @ 15 V	414 pF @ 600 V	+15V, -4V	-	83W (Tc)	155mOhm @ 15A, 15V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
RJK03M0DPA-WS-J5A	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-