Page 535 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF6623TR1PBF
Infineon Technologies

MOSFET N-CH 20V 16A DIRECTFET

Package: DirectFET? Isometric ST

Stock9,648
IRF6617TR1PBF
Infineon Technologies

MOSFET N-CH 30V 14A DIRECTFET

Package: DirectFET? Isometric ST

Stock4,416
IRFR13N20DTRR
Infineon Technologies

MOSFET N-CH 200V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,128
IXFJ52N30Q
IXYS

MOSFET N-CH TO-220

Package: -

Stock6,352
NP90N06VLG-E1-AY
Renesas Electronics America

MOSFET N-CH 60V 90A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,644
IXTA98N075T
IXYS

MOSFET N-CH 75V 98A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock103,464
NTD20N03L27G
ON Semiconductor

MOSFET N-CH 30V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,024
FQB2N90TM
Fairchild/ON Semiconductor

MOSFET N-CH 900V 2.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,104
FDD20AN06A0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 45A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock268,260
BSS138_L99Z
Fairchild/ON Semiconductor

MOSFET N-CH 50V 220MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock7,024
IRFR1010ZTRLPBF
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock62,388
HAT2164H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 60A 5LFPAK

Package: SC-100, SOT-669

Stock29,928
UPA2825T1S-E2-AT
Renesas Electronics America

MOSFET N-CH 30V 8HVSON

Package: 8-PowerWDFN

Stock265,884
TK100S04N1L,LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 100A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,800
IRF9530NSPBF
Infineon Technologies

MOSFET P-CH 100V 14A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,544
BSC018NE2LSI
Infineon Technologies

MOSFET N-CH 25V 29A TDSON-8

Package: 8-PowerTDFN

Stock546,120
IPD60R600P6ATMA1
Infineon Technologies

MOSFET N-CH 600V 7.3A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,096
BSZ018NE2LSIATMA1
Infineon Technologies

MOSFET N-CH 25V 22A/40A TSDSON

Package: -

Stock74,508
AOUS66616
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 33A/92A ULTRASO8

Package: -

Request a Quote
AUIRLR3114ZTRL
International Rectifier

AUTOMOTIVE POWER MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6623TR1PBF	Infineon Technologies	MOSFET N-CH 20V 16A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? ST Package / Case: DirectFET? Isometric ST	Package: DirectFET? Isometric ST	Stock9,648	MOSFET (Metal Oxide)	20V	16A (Ta), 55A (Tc)	4.5V, 10V	2.2V @ 250µA	17nC @ 4.5V	1360pF @ 10V	±20V	-	1.4W (Ta), 42W (Tc)	5.7 mOhm @ 15A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? ST	DirectFET? Isometric ST
IRF6617TR1PBF	Infineon Technologies	MOSFET N-CH 30V 14A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 8.1 mOhm @ 15A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? ST Package / Case: DirectFET? Isometric ST	Package: DirectFET? Isometric ST	Stock4,416	MOSFET (Metal Oxide)	30V	14A (Ta), 55A (Tc)	4.5V, 10V	2.35V @ 250µA	17nC @ 4.5V	1300pF @ 15V	±20V	-	2.1W (Ta), 42W (Tc)	8.1 mOhm @ 15A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? ST	DirectFET? Isometric ST
IRFR13N20DTRR	Infineon Technologies	MOSFET N-CH 200V 13A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,128	MOSFET (Metal Oxide)	200V	13A (Tc)	10V	5.5V @ 250µA	38nC @ 10V	830pF @ 25V	±30V	-	110W (Tc)	235 mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFJ52N30Q	IXYS	MOSFET N-CH TO-220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,352	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NP90N06VLG-E1-AY	Renesas Electronics America	MOSFET N-CH 60V 90A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 45A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,644	MOSFET (Metal Oxide)	60V	90A (Tc)	4.5V, 10V	2.5V @ 250µA	135nC @ 10V	6900pF @ 25V	±20V	-	1.2W (Ta), 105W (Tc)	7.8 mOhm @ 45A, 10V	175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTA98N075T	IXYS	MOSFET N-CH 75V 98A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock103,464	MOSFET (Metal Oxide)	75V	98A (Tc)	10V	4V @ 100µA	-	-	±20V	-	230W (Tc)	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTD20N03L27G	ON Semiconductor	MOSFET N-CH 30V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.75W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,024	MOSFET (Metal Oxide)	30V	20A (Ta)	4V, 5V	2V @ 250µA	18.9nC @ 10V	1260pF @ 25V	±20V	-	1.75W (Ta), 74W (Tc)	27 mOhm @ 10A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FQB2N90TM	Fairchild/ON Semiconductor	MOSFET N-CH 900V 2.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 85W (Tc) Rds On (Max) @ Id, Vgs: 7.2 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,104	MOSFET (Metal Oxide)	900V	2.2A (Tc)	10V	5V @ 250µA	15nC @ 10V	500pF @ 25V	±30V	-	3.13W (Ta), 85W (Tc)	7.2 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDD20AN06A0	Fairchild/ON Semiconductor	MOSFET N-CH 60V 45A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock268,260	MOSFET (Metal Oxide)	60V	8A (Ta), 45A (Tc)	10V	4V @ 250µA	19nC @ 10V	950pF @ 25V	±20V	-	90W (Tc)	20 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
BSS138_L99Z	Fairchild/ON Semiconductor	MOSFET N-CH 50V 220MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,024	MOSFET (Metal Oxide)	50V	220mA (Ta)	4.5V, 10V	1.5V @ 1mA	2.4nC @ 10V	27pF @ 25V	±20V	-	360mW (Ta)	3.5 Ohm @ 220mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IRFR1010ZTRLPBF	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock62,388	MOSFET (Metal Oxide)	55V	42A (Tc)	10V	4V @ 100µA	95nC @ 10V	2840pF @ 25V	±20V	-	140W (Tc)	7.5 mOhm @ 42A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
HAT2164H-EL-E	Renesas Electronics America	MOSFET N-CH 30V 60A 5LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock29,928	MOSFET (Metal Oxide)	30V	60A (Ta)	4.5V, 10V	-	50nC @ 4.5V	7600pF @ 10V	±20V	-	30W (Tc)	3.1 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
UPA2825T1S-E2-AT	Renesas Electronics America	MOSFET N-CH 30V 8HVSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 16.5W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 24A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock265,884	MOSFET (Metal Oxide)	30V	24A (Tc)	4.5V, 10V	-	57nC @ 10V	2600pF @ 10V	±20V	-	1.5W (Ta), 16.5W (Tc)	4.6 mOhm @ 24A, 10V	150°C (TJ)	Surface Mount	-	8-PowerWDFN
TK100S04N1L,LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 100A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5490pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,800	MOSFET (Metal Oxide)	40V	100A (Ta)	4.5V, 10V	2.5V @ 500µA	76nC @ 10V	5490pF @ 10V	±20V	-	100W (Tc)	2.3 mOhm @ 50A, 10V	175°C (TJ)	Surface Mount	DPAK+	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF9530NSPBF	Infineon Technologies	MOSFET P-CH 100V 14A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,544	MOSFET (Metal Oxide)	100V	14A (Tc)	10V	4V @ 250µA	58nC @ 10V	760pF @ 25V	±20V	-	3.8W (Ta), 79W (Tc)	200 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSC018NE2LSI	Infineon Technologies	MOSFET N-CH 25V 29A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock546,120	MOSFET (Metal Oxide)	25V	29A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	36nC @ 10V	2500pF @ 12V	±20V	-	2.5W (Ta), 69W (Tc)	1.8 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPD60R600P6ATMA1	Infineon Technologies	MOSFET N-CH 600V 7.3A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,096	MOSFET (Metal Oxide)	600V	7.3A (Tc)	10V	4.5V @ 200µA	12nC @ 10V	557pF @ 100V	±20V	-	63W (Tc)	600 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
BSZ018NE2LSIATMA1	Infineon Technologies	MOSFET N-CH 25V 22A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	Package: -	Stock74,508	MOSFET (Metal Oxide)	25 V	22A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	36 nC @ 10 V	2500 pF @ 12 V	±20V	-	2.1W (Ta), 69W (Tc)	1.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
AOUS66616	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 33A/92A ULTRASO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 92.5W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UltraSO-8™ Package / Case: 3-PowerSMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	33A (Ta), 92A (Tc)	6V, 10V	3.4V @ 250µA	60 nC @ 10 V	2870 pF @ 30 V	±20V	-	6.2W (Ta), 92.5W (Tc)	3.3mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	UltraSO-8™	3-PowerSMD, Flat Leads
AUIRLR3114ZTRL	International Rectifier	AUTOMOTIVE POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	42A (Tc)	-	2.5V @ 100µA	56 nC @ 4.5 V	3810 pF @ 25 V	-	-	140W (Tc)	4.9mOhm @ 42A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
TK7R7P10PL-RQ	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 27.5A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,692	MOSFET (Metal Oxide)	100 V	55A (Tc)	4.5V, 10V	2.5V @ 500µA	44 nC @ 10 V	2800 pF @ 50 V	±20V	-	93W (Tc)	7.7mOhm @ 27.5A, 10V	175°C	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
SQD19P06-60L_T4GE3	Vishay Siliconix	MOSFET P-CH 60V 20A TO252AA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock20,781	MOSFET (Metal Oxide)	60 V	20A (Tc)	4.5V, 10V	2.5V @ 250µA	41 nC @ 10 V	1490 pF @ 25 V	±20V	-	46W (Tc)	55mOhm @ 19A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJP45N06A_T0_00001	Panjit International Inc.	60V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock5,649	MOSFET (Metal Oxide)	60 V	55A (Tc)	4.5V, 10V	2.5V @ 250µA	39 nC @ 10 V	2256 pF @ 25 V	±20V	-	96W (Tc)	12mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
2SK2083-DL-E	onsemi	ULTRAHIGH-SPEED SWITCHING FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SQJ431EP-T2_GE3	Vishay Siliconix	MOSFET P-CH 200V 12A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 213mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	12A (Tc)	6V, 10V	3.5V @ 250µA	106 nC @ 10 V	4355 pF @ 25 V	±20V	-	83W (Tc)	213mOhm @ 3.8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SISS06DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 47.6/172.6A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 47.6A (Ta), 172.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 1.38mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Stock13,980	MOSFET (Metal Oxide)	30 V	47.6A (Ta), 172.6A (Tc)	4.5V, 10V	2.2V @ 250µA	77 nC @ 10 V	3660 pF @ 15 V	+20V, -16V	-	5W (Ta), 65.7W (Tc)	1.38mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
NP45N06PUK-E1-AY	Renesas Electronics Corporation	MOSFET N-CH 60V 45A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 23A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: TO-263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock19,203	MOSFET (Metal Oxide)	60 V	45A (Tc)	10V	4V @ 250µA	45 nC @ 10 V	2540 pF @ 25 V	±20V	-	1.2W (Ta), 75W (Tc)	9.6mOhm @ 23A, 10V	175°C	Surface Mount	TO-263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PJD25N04-AU_L2_000A1	Panjit International Inc.	40V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	5.9A (Ta), 21A (Tc)	4.5V, 10V	2.5V @ 250µA	4.4 nC @ 4.5 V	425 pF @ 25 V	±20V	-	2.4W (Ta), 30W (Tc)	32mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63