Page 536 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRFSL8405
Infineon Technologies

MOSFET N-CH 40V 120A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,328
APTM10UM02FAG
Microsemi Corporation

MOSFET N-CH 100V 570A SP6

Package: SP6

Stock6,064
IXFT16N120P
IXYS

MOSFET N-CH 1200V 16A TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock7,008
IRF840LCSTRRPBF
Vishay Siliconix

MOSFET N-CH 500V 8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,832
RRH075P03TB1
Rohm Semiconductor

MOSFET P-CH 30V 7.5A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock82,188
IPD50R500CEAUMA1
Infineon Technologies

MOSFET N-CH 550V 7.6A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,448
STW3N150
STMicroelectronics

MOSFET N-CH 1500V 2.5A TO-247

Package: TO-247-3

Stock4,000
STB10N95K5
STMicroelectronics

MOSFET N-CH 950V 8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,728
IPP057N08N3GXKSA1
Infineon Technologies

MOSFET N-CH 80V 80A TO220-3

Package: TO-220-3

Stock14,628
FDB86563_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 110A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,568
RQ6C050BCTCR
Rohm Semiconductor

PCH -20V -5A MIDDLE POWER MOSFET

Package: SC-95-6

Stock3,472
CSD17579Q3A
Texas Instruments

MOSFET N-CH 30V 35A 8VSON

Package: 8-PowerVDFN

Stock12,180
EPC2015
EPC

TRANS GAN 40V 33A BUMPED DIE

Package: Die

Stock22,938
STD7N80K5
STMicroelectronics

MOSFET N-CH 800V 6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock26,898
NTD5C668NLT4G
onsemi

MOSFET N-CH 60V 15A/48A DPAK

Package: -

Stock4,245
HUF75344S3
Harris Corporation

75A, 55V, 0.008 OHM, N-CHANNEL U

Package: -

Request a Quote
RQ7E100ATTCR
Rohm Semiconductor

MOSFET P-CH 30V 10A TSMT8

Package: -

Stock7,851
RF1S45N06LE
Harris Corporation

45A, 60V, 0.028OHM, N-CHANNEL,

Package: -

Request a Quote
IPQC60R040S7AXTMA1
Infineon Technologies

MOSFET

Package: -

Request a Quote
IXFP05N100M
IXYS

MOSFET N-CH TO220

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRFSL8405	Infineon Technologies	MOSFET N-CH 40V 120A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5193pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 163W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,328	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	3.9V @ 100µA	161nC @ 10V	5193pF @ 25V	±20V	-	163W (Tc)	2.3 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
APTM10UM02FAG	Microsemi Corporation	MOSFET N-CH 100V 570A SP6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 570A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1660W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	Package: SP6	Stock6,064	MOSFET (Metal Oxide)	100V	570A	10V	4V @ 10mA	1360nC @ 10V	40000pF @ 25V	±30V	-	1660W (Tc)	2.5 mOhm @ 200A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
IXFT16N120P	IXYS	MOSFET N-CH 1200V 16A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 660W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock7,008	MOSFET (Metal Oxide)	1200V	16A (Tc)	10V	6.5V @ 1mA	120nC @ 10V	6900pF @ 25V	±30V	-	660W (Tc)	950 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IRF840LCSTRRPBF	Vishay Siliconix	MOSFET N-CH 500V 8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,832	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	±30V	-	3.1W (Ta), 125W (Tc)	850 mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AB	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RRH075P03TB1	Rohm Semiconductor	MOSFET P-CH 30V 7.5A SOP8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock82,188	MOSFET (Metal Oxide)	30V	7.5A (Ta)	4V, 10V	2.5V @ 1mA	21nC @ 5V	1900pF @ 10V	±20V	-	650mW (Ta)	21 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
IPD50R500CEAUMA1	Infineon Technologies	MOSFET N-CH 550V 7.6A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.3A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,448	MOSFET (Metal Oxide)	550V	7.6A (Tc)	13V	3.5V @ 200µA	18.7nC @ 10V	433pF @ 100V	±20V	-	57W (Tc)	500 mOhm @ 2.3A, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
STW3N150	STMicroelectronics	MOSFET N-CH 1500V 2.5A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 1.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,000	MOSFET (Metal Oxide)	1500V	2.5A (Tc)	10V	5V @ 250µA	29.3nC @ 10V	939pF @ 25V	±30V	-	140W (Tc)	9 Ohm @ 1.3A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STB10N95K5	STMicroelectronics	MOSFET N-CH 950V 8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,728	MOSFET (Metal Oxide)	950V	8A (Tc)	10V	5V @ 100µA	22nC @ 10V	630pF @ 100V	±30V	-	130W (Tc)	800 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP057N08N3GXKSA1	Infineon Technologies	MOSFET N-CH 80V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock14,628	MOSFET (Metal Oxide)	80V	80A (Tc)	6V, 10V	3.5V @ 90µA	69nC @ 10V	4750pF @ 40V	±20V	-	150W (Tc)	5.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
FDB86563_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 110A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 163nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 333W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,568	MOSFET (Metal Oxide)	60V	110A (Tc)	10V	4V @ 250µA	163nC @ 10V	10100pF @ 30V	±20V	-	333W (Tc)	1.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RQ6C050BCTCR	Rohm Semiconductor	PCH -20V -5A MIDDLE POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.25W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SC-95-6	Package: SC-95-6	Stock3,472	MOSFET (Metal Oxide)	20V	5A (Tc)	4.5V	1.2V @ 1mA	10.4nC @ 4.5V	740pF @ 10V	±8V	-	1.25W (Tc)	36 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SC-95-6
CSD17579Q3A	Texas Instruments	MOSFET N-CH 30V 35A 8VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 998pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 10.2 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (3x3.15) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock12,180	MOSFET (Metal Oxide)	30V	20A (Ta)	4.5V, 10V	1.9V @ 250µA	15nC @ 10V	998pF @ 15V	±20V	-	3.2W (Ta), 29W (Tc)	10.2 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSONP (3x3.15)	8-PowerVDFN
EPC2015	EPC	TRANS GAN 40V 33A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (11-Solder Bar) Package / Case: Die	Package: Die	Stock22,938	GaNFET (Gallium Nitride)	40V	33A (Ta)	5V	2.5V @ 9mA	11.6nC @ 5V	1200pF @ 20V	+6V, -5V	-	-	4 mOhm @ 33A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die Outline (11-Solder Bar)	Die
STD7N80K5	STMicroelectronics	MOSFET N-CH 800V 6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock26,898	MOSFET (Metal Oxide)	800V	6A (Tc)	10V	5V @ 100µA	13.4nC @ 10V	360pF @ 100V	±30V	-	110W (Tc)	1.2 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD5C668NLT4G	onsemi	MOSFET N-CH 60V 15A/48A DPAK FET Type: N-Channel Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock4,245	-	-	15A (Ta), 48A (Tc)	-	2.1V @ 250µA	-	-	-	-	-	8.9mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
HUF75344S3	Harris Corporation	75A, 55V, 0.008 OHM, N-CHANNEL U FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 155W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	75A (Tc)	10V	4V @ 250µA	210 nC @ 20 V	3200 pF @ 25 V	±20V	-	155W (Tc)	8mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2PAK, TO-262AA
RQ7E100ATTCR	Rohm Semiconductor	MOSFET P-CH 30V 10A TSMT8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Package: -	Stock7,851	MOSFET (Metal Oxide)	30 V	10A (Ta)	4.5V, 10V	2.5V @ 1mA	53 nC @ 10 V	2370 pF @ 15 V	±20V	-	1.1W (Ta)	11.2mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	TSMT8	8-SMD, Flat Lead
RF1S45N06LE	Harris Corporation	45A, 60V, 0.028OHM, N-CHANNEL, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 142W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 (I2PAK) Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	45A (Tc)	5V	2V @ 250µA	135 nC @ 10 V	2150 pF @ 25 V	±10V	-	142W (Tc)	28mOhm @ 45A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-262 (I2PAK)	TO-262-3 Long Leads, I2PAK, TO-262AA
IPQC60R040S7AXTMA1	Infineon Technologies	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22 Package / Case: 22-PowerBSOP Module	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	14A (Tc)	12V	4.5V @ 790µA	83 nC @ 12 V	-	±20V	-	272W (Tc)	40mOhm @ 13A, 12V	-40°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22	22-PowerBSOP Module
IXFP05N100M	IXYS	MOSFET N-CH TO220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STD14NM50NAG	STMicroelectronics	MOSFET N-CH 500V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 50 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock6,945	MOSFET (Metal Oxide)	500 V	12A (Tc)	10V	4V @ 250µA	27 nC @ 10 V	816 pF @ 50 V	±25V	-	90W	320mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
APT5015SVFRG	Microchip Technology	MOSFET N-CH 500V 32A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	32A (Tc)	10V	4V @ 1mA	300 nC @ 10 V	5280 pF @ 25 V	±30V	-	370W (Tc)	150mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
DMNH10H021SPSW-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI50 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3789 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	58A (Tc)	10V	4V @ 250µA	71 nC @ 10 V	3789 pF @ 50 V	±20V	-	1.8W	28mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
SIR510DP-T1-RE3	Vishay Siliconix	N-CHANNEL 100 V (D-S) MOSFET POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 126A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock36,864	MOSFET (Metal Oxide)	100 V	31A (Ta), 126A (Tc)	7.5V, 10V	4V @ 250µA	81 nC @ 10 V	4980 pF @ 50 V	±20V	-	6.25W (Ta), 104W (Tc)	3.6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
FDBL86366-F085	onsemi	MOSFET N-CH 80V 220A 8HPSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tj) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HPSOF Package / Case: 8-PowerSFN	Package: -	Stock7,293	MOSFET (Metal Oxide)	80 V	220A (Tc)	10V	4V @ 250µA	112 nC @ 10 V	6320 pF @ 40 V	±20V	-	300W (Tj)	3mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-HPSOF	8-PowerSFN
AS3401	ANBON SEMICONDUCTOR (INT'L) LIMITED	P-CHANNEL ENHANCEMENT MODE MOSFE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock176,259	MOSFET (Metal Oxide)	30 V	4.4A (Ta)	2.5V, 10V	1.4V @ 250µA	7.2 nC @ 10 V	680 pF @ 15 V	±12V	-	1.2W (Ta)	55mOhm @ 4.4A, 10V	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
DMN3061SW-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT323 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 490mW (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	2.7A (Ta)	3.3V, 10V	1.8V @ 250µA	3.5 nC @ 4.5 V	278 pF @ 15 V	±20V	-	490mW (Ta)	60mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
QM2409K-ML	MOSLEADER	Single P -20V -3.1A SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-