Page 570 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF8308MTR1PBF
Infineon Technologies

MOSFET N-CH 30V 27A MX

Package: DirectFET? Isometric MX

Stock4,384
IRF1405LPBF
Infineon Technologies

MOSFET N-CH 55V 131A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock180,540
BUK7Y25-80E/CX
NXP

MOSFET N-CH LFPAK

Package: SC-100, SOT-669

Stock7,088
IXTF280N055T
IXYS

MOSFET N-CH 55V 160A ISOPLUS I4

Package: i4-Pac?-5

Stock2,784
BUK7E2R7-30B,127
NXP

MOSFET N-CH 30V 75A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,704
HUFA75333P3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 66A TO-220AB

Package: TO-220-3

Stock4,720
STI21NM60ND
STMicroelectronics

MOSFET N-CH 600V 17A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,024
AUIRF7732S2TR
Infineon Technologies

MOSFET N-CH 40V 14A DIRECTFET

Package: DirectFET? Isometric SC

Stock3,312
APTM120DA30T1G
Microsemi Corporation

MOSFET N-CH 1200V 31A SP1

Package: SP1

Stock6,496
RE1C001ZPTL
Rohm Semiconductor

MOSFET P-CH 20V 0.1A EMT3

Package: SC-89, SOT-490

Stock6,880
SI9407BDY-T1-E3
Vishay Siliconix

MOSFET P-CH 60V 4.7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock66,000
CSD15380F3
Texas Instruments

MOSFET N-CH 20V 500MA PICOSTAR

Package: 3-XFDFN

Stock53,412
FDN306P
Fairchild/ON Semiconductor

MOSFET P-CH 12V 2.6A SSOT3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,713,264
G6N02L
Goford Semiconductor

MOSFET N-CH 20V 6A SOT-23-3L

Package: -

Stock12,627
IRF3515STRLPBF
Infineon Technologies

MOSFET N-CH 150V 41A D2PAK

Package: -

Request a Quote
NVBLS0D8N08XTXG
onsemi

T10S 80V SG NCH MOSFET TOLL

Package: -

Request a Quote
2SK2851TZ-E
Renesas Electronics Corporation

SMALL SIGNAL N-CHANNEL MOSFET

Package: -

Request a Quote
PJMF120N60EC_T0_00001
Panjit International Inc.

600V SUPER JUNCTION MOSFET

Package: -

Stock6,000
FDB86563-F085
onsemi

MOSFET N-CH 60V 110A D2PAK

Package: -

Stock4,770
RFP2N10
Harris Corporation

N-CHANNEL, MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF8308MTR1PBF	Infineon Technologies	MOSFET N-CH 30V 27A MX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4404pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 27A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock4,384	MOSFET (Metal Oxide)	30V	27A (Ta), 150A (Tc)	4.5V, 10V	2.35V @ 100µA	42nC @ 4.5V	4404pF @ 15V	±20V	-	2.8W (Ta), 89W (Tc)	2.5 mOhm @ 27A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF1405LPBF	Infineon Technologies	MOSFET N-CH 55V 131A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5480pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock180,540	MOSFET (Metal Oxide)	55V	131A (Tc)	10V	4V @ 250µA	260nC @ 10V	5480pF @ 25V	±20V	-	200W (Tc)	5.3 mOhm @ 101A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
BUK7Y25-80E/CX	NXP	MOSFET N-CH LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock7,088	MOSFET (Metal Oxide)	80V	39A (Tc)	10V	4V @ 1mA	25.9nC @ 10V	1800pF @ 25V	±20V	-	95W (Tc)	25 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IXTF280N055T	IXYS	MOSFET N-CH 55V 160A ISOPLUS I4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC? Package / Case: i4-Pac?-5	Package: i4-Pac?-5	Stock2,784	MOSFET (Metal Oxide)	55V	160A (Tc)	10V	4V @ 250µA	200nC @ 10V	9800pF @ 25V	±20V	-	200W (Tc)	4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUS i4-PAC?	i4-Pac?-5
BUK7E2R7-30B,127	NXP	MOSFET N-CH 30V 75A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6212pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,704	MOSFET (Metal Oxide)	30V	75A (Tc)	10V	4V @ 1mA	91nC @ 10V	6212pF @ 25V	±20V	-	300W (Tc)	2.7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
HUFA75333P3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 66A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 66A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,720	MOSFET (Metal Oxide)	55V	66A (Tc)	10V	4V @ 250µA	85nC @ 20V	1300pF @ 25V	±20V	-	150W (Tc)	16 mOhm @ 66A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STI21NM60ND	STMicroelectronics	MOSFET N-CH 600V 17A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,024	MOSFET (Metal Oxide)	600V	17A (Tc)	10V	5V @ 250µA	60nC @ 10V	1800pF @ 50V	±25V	-	140W (Tc)	220 mOhm @ 8.5A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
AUIRF7732S2TR	Infineon Technologies	MOSFET N-CH 40V 14A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SC Package / Case: DirectFET? Isometric SC	Package: DirectFET? Isometric SC	Stock3,312	MOSFET (Metal Oxide)	40V	14A (Ta)	10V	4V @ 50µA	45nC @ 10V	1700pF @ 25V	±20V	-	2.5W (Ta), 41W (Tc)	6.95 mOhm @ 33A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET? SC	DirectFET? Isometric SC
APTM120DA30T1G	Microsemi Corporation	MOSFET N-CH 1200V 31A SP1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 31A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14560pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 657W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 25A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	Package: SP1	Stock6,496	MOSFET (Metal Oxide)	1200V	31A	10V	5V @ 2.5mA	560nC @ 10V	14560pF @ 25V	±30V	-	657W (Tc)	360 mOhm @ 25A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
RE1C001ZPTL	Rohm Semiconductor	MOSFET P-CH 20V 0.1A EMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3F (SOT-416FL) Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock6,880	MOSFET (Metal Oxide)	20V	100mA (Ta)	1.2V, 4.5V	1V @ 100µA	-	15pF @ 10V	±10V	-	150mW (Ta)	3.8 Ohm @ 100mA, 4.5V	150°C (TJ)	Surface Mount	EMT3F (SOT-416FL)	SC-89, SOT-490
SI9407BDY-T1-E3	Vishay Siliconix	MOSFET P-CH 60V 4.7A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock66,000	MOSFET (Metal Oxide)	60V	4.7A (Tc)	4.5V, 10V	3V @ 250µA	22nC @ 10V	600pF @ 30V	±20V	-	2.4W (Ta), 5W (Tc)	120 mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
CSD15380F3	Texas Instruments	MOSFET N-CH 20V 500MA PICOSTAR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 8V Vgs(th) (Max) @ Id: 1.35V @ 2.5µA Gate Charge (Qg) (Max) @ Vgs: 0.281nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10.5pF @ 10V Vgs (Max): 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 1190 mOhm @ 100mA, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock53,412	MOSFET (Metal Oxide)	20V	500mA (Ta)	2.8V, 8V	1.35V @ 2.5µA	0.281nC @ 10V	10.5pF @ 10V	10V	-	500mW (Ta)	1190 mOhm @ 100mA, 8V	-55°C ~ 150°C (TJ)	Surface Mount	3-PICOSTAR	3-XFDFN
FDN306P	Fairchild/ON Semiconductor	MOSFET P-CH 12V 2.6A SSOT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1138pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,713,264	MOSFET (Metal Oxide)	12V	2.6A (Ta)	1.8V, 4.5V	1.5V @ 250µA	17nC @ 4.5V	1138pF @ 6V	±8V	-	500mW (Ta)	40 mOhm @ 2.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
G6N02L	Goford Semiconductor	MOSFET N-CH 20V 6A SOT-23-3L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.8W (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock12,627	MOSFET (Metal Oxide)	20 V	6A (Tc)	2.5V, 4.5V	900mV @ 250µA	12.5 nC @ 10 V	1140 pF @ 10 V	±12V	-	1.8W (Tc)	11.3mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IRF3515STRLPBF	Infineon Technologies	MOSFET N-CH 150V 41A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	41A (Tc)	-	4.5V @ 250µA	107 nC @ 10 V	2260 pF @ 25 V	-	-	-	45mOhm @ 25A, 10V	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NVBLS0D8N08XTXG	onsemi	T10S 80V SG NCH MOSFET TOLL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 457A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 720µA Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12920 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 325W (Tc) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HPSOF Package / Case: 8-PowerSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	457A (Tc)	10V	3.6V @ 720µA	174 nC @ 10 V	12920 pF @ 40 V	±20V	-	325W (Tc)	0.79mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-HPSOF	8-PowerSFN
2SK2851TZ-E	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJMF120N60EC_T0_00001	Panjit International Inc.	600V SUPER JUNCTION MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB-F Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Stock6,000	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	4V @ 250µA	51 nC @ 10 V	1960 pF @ 400 V	±30V	-	33W (Tc)	120mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220AB-F	TO-220-3 Full Pack, Isolated Tab
FDB86563-F085	onsemi	MOSFET N-CH 60V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 333W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock4,770	MOSFET (Metal Oxide)	60 V	110A (Tc)	10V	4V @ 250µA	163 nC @ 10 V	10100 pF @ 30 V	±20V	-	333W (Tc)	1.8mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RFP2N10	Harris Corporation	N-CHANNEL, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	2A (Tc)	10V	4V @ 250µA	-	200 pF @ 25 V	±20V	-	25W (Tc)	1.05Ohm @ 2A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
NTMJS1D7N04CTWG	onsemi	MOSFET N-CH 40V 35A/185A 8LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: SOT-1205, 8-LFPAK56	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	35A (Ta), 185A (Tc)	10V	3.5V @ 130µA	47 nC @ 10 V	3300 pF @ 25 V	±20V	-	3.8W (Ta), 106W (Tc)	1.7mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-LFPAK	SOT-1205, 8-LFPAK56
DMTH4007SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2082 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	15.7A (Ta), 100A (Tc)	10V	4V @ 250µA	41.9 nC @ 10 V	2082 pF @ 25 V	±20V	-	2.8W (Ta), 136W (Tc)	7.6mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
TSM300NB06CR-RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 60V 6A/27A 8PDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5.2x5.75) Package / Case: 8-PowerLDFN	Package: -	Stock2,598	MOSFET (Metal Oxide)	60 V	6A (Ta), 27A (Tc)	10V	4.5V @ 250µA	18 nC @ 10 V	1110 pF @ 30 V	±20V	-	3.1W (Ta), 56W (Tc)	30mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PDFN (5.2x5.75)	8-PowerLDFN
RD3L140SPTL1	Rohm Semiconductor	MOSFET P-CH 60V 14A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock94,950	MOSFET (Metal Oxide)	60 V	14A (Ta)	4V, 10V	3V @ 1mA	27 nC @ 10 V	1900 pF @ 10 V	±20V	-	20W (Tc)	84mOhm @ 14A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSZ110N06NS3GATMA1	Infineon Technologies	MOSFET N-CH 60V 20A 8TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 23µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerVDFN	Package: -	Stock34,755	MOSFET (Metal Oxide)	60 V	20A (Tc)	10V	4V @ 23µA	33 nC @ 10 V	2700 pF @ 30 V	±20V	-	2.1W (Ta), 50W (Tc)	11mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerVDFN
R6006JNXC7G	Rohm Semiconductor	MOSFET N-CH 600V 6A TO220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 7V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock2,622	MOSFET (Metal Oxide)	600 V	6A (Tc)	15V	7V @ 800µA	15.5 nC @ 15 V	410 pF @ 100 V	±30V	-	43W (Tc)	936mOhm @ 3A, 15V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
SIR4409DP-T1-RE3	Vishay Siliconix	P-CHANNEL 40 V (D-S) MOSFET POWE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 60.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock17,640	MOSFET (Metal Oxide)	40 V	17.2A (Ta), 60.6A (Tc)	4.5V, 10V	2.3V @ 250µA	126 nC @ 10 V	5670 pF @ 20 V	±20V	-	4.8W (Ta), 59.5W (Tc)	9mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
PMPB10UPX	Nexperia USA Inc.	MOSFET P-CH 12V 10A DFN2020MD-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 13mW (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	10A (Ta)	1.8V, 4.5V	900mV @ 250µA	40 nC @ 4.5 V	2200 pF @ 6 V	±8V	-	1.7W (Ta), 13mW (Tc)	11.5mOhm @ 10A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad