Page 573 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPU09N03LB G
Infineon Technologies

MOSFET N-CH 30V 50A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,104
GP1M016A060N
Global Power Technologies Group

MOSFET N-CH 600V 16A TO3PN

Package: TO-3P-3, SC-65-3

Stock6,400
SFW9530TM
Fairchild/ON Semiconductor

MOSFET P-CH 100V 10.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,120
SI4833ADY-T1-E3
Vishay Siliconix

MOSFET P-CH 30V 4.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock475,632
SFH9250L
Fairchild/ON Semiconductor

MOSFET P-CH 200V 19.5A TO-3P

Package: TO-3P-3, SC-65-3

Stock5,344
FQP58N08
Fairchild/ON Semiconductor

MOSFET N-CH 80V 57.5A TO-220

Package: TO-220-3

Stock60,012
HUF75229P3
Fairchild/ON Semiconductor

MOSFET N-CH 50V 44A TO-220AB

Package: TO-220-3

Stock102,132
2N7640-GA
GeneSiC Semiconductor

TRANS SJT 650V 16A TO276

Package: TO-276AA

Stock2,368
IXFN90N30
IXYS

MOSFET N-CH 300V 90A SOT-227B

Package: SOT-227-4, miniBLOC

Stock6,448
R6046ANZC8
Rohm Semiconductor

MOSFET N-CH 10V DRIVE TO-3PF

Package: TO-3PFM, SC-93-3

Stock3,920
FDFMA2P857
Fairchild/ON Semiconductor

MOSFET P-CH 20V 3A MICROFET2X2

Package: 6-VDFN Exposed Pad

Stock13,644
AON7422E
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 20A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock673,920
TK65S04N1L,LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 65A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,928
FDP8870_F085
Fairchild/ON Semiconductor

MOSFET N-CH 30V 156A TO-220

Package: TO-220-3

Stock6,672
SISA12ADN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 25A 1212-8

Package: PowerPAK? 1212-8

Stock86,676
IPP65R099C6XKSA1
Infineon Technologies

MOSFET N-CH 650V 38A TO220

Package: TO-220-3

Stock8,256
FDN336P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 1.3A SSOT3

Package: TO-236-3, SC-59, SOT-23-3

Stock4,437,084
SIS402DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 35A 1212-8

Package: PowerPAK? 1212-8

Stock562,812
AOD3N60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2.5A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,000
NP82N04NLG-S18-AY
NEC Corporation

MOSFET N-CH 40V 82A TO262

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPU09N03LB G	Infineon Technologies	MOSFET N-CH 30V 50A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,104	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2V @ 20µA	13nC @ 5V	1600pF @ 15V	±20V	-	58W (Tc)	9.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
GP1M016A060N	Global Power Technologies Group	MOSFET N-CH 600V 16A TO3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3039pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 470 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock6,400	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	4V @ 250µA	53nC @ 10V	3039pF @ 25V	±30V	-	312W (Tc)	470 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
SFW9530TM	Fairchild/ON Semiconductor	MOSFET P-CH 100V 10.5A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 66W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,120	MOSFET (Metal Oxide)	100V	10.5A (Tc)	10V	4V @ 250µA	38nC @ 10V	1035pF @ 25V	±30V	-	3.8W (Ta), 66W (Tc)	300 mOhm @ 5.3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4833ADY-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 4.6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.93W (Ta), 2.75W (Tc) Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock475,632	MOSFET (Metal Oxide)	30V	4.6A (Tc)	4.5V, 10V	2.5V @ 250µA	15nC @ 10V	750pF @ 15V	±20V	Schottky Diode (Isolated)	1.93W (Ta), 2.75W (Tc)	72 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SFH9250L	Fairchild/ON Semiconductor	MOSFET P-CH 200V 19.5A TO-3P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 204W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 9.8A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,344	MOSFET (Metal Oxide)	200V	19.5A (Tc)	5V	2V @ 250µA	120nC @ 5V	3250pF @ 25V	±20V	-	204W (Tc)	230 mOhm @ 9.8A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
FQP58N08	Fairchild/ON Semiconductor	MOSFET N-CH 80V 57.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 57.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 146W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 28.75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock60,012	MOSFET (Metal Oxide)	80V	57.5A (Tc)	10V	4V @ 250µA	65nC @ 10V	1900pF @ 25V	±25V	-	146W (Tc)	24 mOhm @ 28.75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
HUF75229P3	Fairchild/ON Semiconductor	MOSFET N-CH 50V 44A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock102,132	MOSFET (Metal Oxide)	50V	44A (Tc)	10V	4V @ 250µA	75nC @ 20V	1060pF @ 25V	±20V	-	90W (Tc)	22 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
2N7640-GA	GeneSiC Semiconductor	TRANS SJT 650V 16A TO276 FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (155°C) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1534pF @ 35V Vgs (Max): - FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 16A Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-276 Package / Case: TO-276AA	Package: TO-276AA	Stock2,368	SiC (Silicon Carbide Junction Transistor)	650V	16A (Tc) (155°C)	-	-	-	1534pF @ 35V	-	-	330W (Tc)	105 mOhm @ 16A	-55°C ~ 225°C (TJ)	Surface Mount	TO-276	TO-276AA
IXFN90N30	IXYS	MOSFET N-CH 300V 90A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 90A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,448	MOSFET (Metal Oxide)	300V	90A	10V	4V @ 8mA	360nC @ 10V	10000pF @ 25V	±20V	-	560W (Tc)	33 mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
R6046ANZC8	Rohm Semiconductor	MOSFET N-CH 10V DRIVE TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 46A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 81 mOhm @ 23A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3PFM, SC-93-3	Package: TO-3PFM, SC-93-3	Stock3,920	MOSFET (Metal Oxide)	600V	46A (Ta)	10V	4.5V @ 1mA	150nC @ 10V	6000pF @ 25V	±30V	-	120W (Tc)	81 mOhm @ 23A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3PFM, SC-93-3
FDFMA2P857	Fairchild/ON Semiconductor	MOSFET P-CH 20V 3A MICROFET2X2 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock13,644	MOSFET (Metal Oxide)	20V	3A (Ta)	1.8V, 4.5V	1.3V @ 250µA	6nC @ 4.5V	435pF @ 10V	±8V	Schottky Diode (Isolated)	1.4W (Ta)	120 mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
AON7422E	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 20A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3x3) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock673,920	MOSFET (Metal Oxide)	30V	20A (Ta), 40A (Tc)	4.5V, 10V	2.4V @ 250µA	50nC @ 10V	2940pF @ 15V	±20V	-	3.1W (Ta), 36W (Tc)	4.3 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3x3)	8-PowerSMD, Flat Leads
TK65S04N1L,LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 65A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 65A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 32.5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,928	MOSFET (Metal Oxide)	40V	65A (Ta)	10V	2.5V @ 300µA	39nC @ 10V	2550pF @ 10V	±20V	-	107W (Tc)	4.3 mOhm @ 32.5A, 10V	175°C (TJ)	Surface Mount	DPAK+	TO-252-3, DPak (2 Leads + Tab), SC-63
FDP8870_F085	Fairchild/ON Semiconductor	MOSFET N-CH 30V 156A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,672	MOSFET (Metal Oxide)	30V	19A (Ta), 156A (Tc)	4.5V, 10V	2.5V @ 250µA	132nC @ 10V	5200pF @ 15V	±20V	-	160W (Tc)	4.1 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SISA12ADN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 25A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock86,676	MOSFET (Metal Oxide)	30V	25A (Tc)	4.5V, 10V	2.2V @ 250µA	45nC @ 10V	2070pF @ 15V	+20V, -16V	-	3.5W (Ta), 28W (Tc)	4.3 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
IPP65R099C6XKSA1	Infineon Technologies	MOSFET N-CH 650V 38A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 12.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock8,256	MOSFET (Metal Oxide)	650V	38A (Tc)	10V	3.5V @ 1.2mA	15nC @ 10V	2780pF @ 100V	±20V	-	278W (Tc)	99 mOhm @ 12.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
FDN336P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 1.3A SSOT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,437,084	MOSFET (Metal Oxide)	20V	1.3A (Ta)	2.5V, 4.5V	1.5V @ 250µA	5nC @ 4.5V	330pF @ 10V	±8V	-	500mW (Ta)	200 mOhm @ 1.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
SIS402DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 35A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock562,812	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	2.2V @ 250µA	42nC @ 10V	1700pF @ 15V	±20V	-	3.8W (Ta), 52W (Tc)	6 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
AOD3N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 2.5A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 56.8W (Tc) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1.25A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,000	MOSFET (Metal Oxide)	600V	2.5A (Tc)	10V	4.5V @ 250µA	12nC @ 10V	370pF @ 25V	±30V	-	56.8W (Tc)	3.5 Ohm @ 1.25A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
NP82N04NLG-S18-AY	NEC Corporation	MOSFET N-CH 40V 82A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	82A (Tc)	-	2.5V @ 250µA	150 nC @ 10 V	9000 pF @ 25 V	-	-	1.8W (Ta), 143W (Tc)	4.2mOhm @ 41A, 10V	175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2PAK, TO-262AA
NP40N055KLE-E1-AY	Renesas Electronics Corporation	MOSFET N-CH 55V 40A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.8W (Ta), 66W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	40A (Tc)	-	2.5V @ 250µA	41 nC @ 5 V	1950 pF @ 25 V	-	-	1.8W (Ta), 66W (Tc)	23mOhm @ 20A, 10V	175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRF7410TRPBF-1	Infineon Technologies	MOSFET P-CH 12V 16A 8SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	16A (Ta)	-	900mV @ 250µA	91 nC @ 4.5 V	8676 pF @ 10 V	±8V	-	2.5W (Ta)	7mOhm @ 16A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
TK3R1P04PL-RQ	Toshiba Semiconductor and Storage	MOSFET N-CHANNEL 40V 58A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock46,824	MOSFET (Metal Oxide)	40 V	58A (Tc)	4.5V, 10V	2.4V @ 500µA	60 nC @ 10 V	4670 pF @ 20 V	±20V	-	87W (Tc)	3.1mOhm @ 29A, 10V	175°C	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHFR120-GE3	Vishay Siliconix	MOSFET N-CHANNEL 100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,968	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	10V	4V @ 250µA	16 nC @ 10 V	360 pF @ 25 V	±20V	-	2.5W (Ta), 42W (Tc)	270mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
AOTF380A60CL	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 11A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Stock8,961	MOSFET (Metal Oxide)	600 V	11A (Tj)	10V	3.8V @ 250µA	20 nC @ 10 V	955 pF @ 100 V	±20V	-	27W (Tc)	380mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
SI3401A-TP	Micro Commercial Co	MOSFET P-CH 30V 4.2A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 400mW Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock121,587	MOSFET (Metal Oxide)	30 V	4.2A (Tj)	2.5V, 10V	1.3V @ 250µA	-	1050 pF @ 15 V	±12V	-	400mW	60mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
FDMS0308CS	onsemi	MOSFET N-CH 30V 22A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4225 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 2.5W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	22A (Ta)	-	3V @ 1mA	66 nC @ 10 V	4225 pF @ 15 V	-	-	2.5W (Ta), 65W (Tc)	3mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
RSS095N05FRATB	Rohm Semiconductor	MOSFET N-CH 45V 9.5A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock5,310	MOSFET (Metal Oxide)	45 V	9.5A (Ta)	4V, 10V	2.5V @ 1mA	26.5 nC @ 5 V	1830 pF @ 10 V	±20V	-	1.4W (Ta)	16mOhm @ 9.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)