Page 572 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7707TRPBF
Infineon Technologies

MOSFET P-CH 20V 7A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock3,536
IRF8788PBF
Infineon Technologies

MOSFET N-CH 30V 24A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,336
AO4450_101
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 7A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,352
NTD4854N-1G
ON Semiconductor

MOSFET N-CH 25V 15.7A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,280
PHB152NQ03LTA,118
NXP

MOSFET N-CH 25V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,160
IRFR024
Vishay Siliconix

MOSFET N-CH 60V 14A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock17,268
IRFP22N50A
Vishay Siliconix

MOSFET N-CH 500V 22A TO-247AC

Package: TO-247-3

Stock83,340
IPP45N06S409AKSA2
Infineon Technologies

MOSFET N-CH 60V 45A TO220-3

Package: TO-220-3

Stock6,800
TN0610N3-G-P003
Microchip Technology

MOSFET N-CH 100V 500MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock2,624
UPA2820T1S-E2-AT
Renesas Electronics America

MOSFET N-CH 30V 8HVSON

Package: 8-PowerWDFN

Stock2,704
IRLZ24NPBF
Infineon Technologies

MOSFET N-CH 55V 18A TO-220AB

Package: TO-220-3

Stock76,944
IPW60R099C7XKSA1
Infineon Technologies

MOSFET N-CH 600V 22A TO247-3

Package: TO-247-3

Stock7,872
SI7172DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 200V 25A PPAK SO-8

Package: PowerPAK? SO-8

Stock336,900
SI4427BDY-T1-E3
Vishay Siliconix

MOSFET P-CH 30V 9.7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock650,760
FDB050AN06A0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 80A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock17,604
MCU120N04-TP
Micro Commercial Co

Interface

Package: -

Request a Quote
BSC010NE2LSATMA1
Infineon Technologies

MOSFET N-CH 25V 39A/100A TDSON

Package: -

Stock57,087
IXTH20N65X2
IXYS

MOSFET N-CH 650V 20A TO247

Package: -

Stock717
NTH4LN095N65S3H
onsemi

POWER MOSFET, N-CHANNEL, SUPERFE

Package: -

Request a Quote
RS3P070ATTB1
Rohm Semiconductor

PCH -100V -7A POWER MOSFET: RS3P

Package: -

Stock9,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7707TRPBF	Infineon Technologies	MOSFET P-CH 20V 7A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2361pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock3,536	MOSFET (Metal Oxide)	20V	7A (Ta)	2.5V, 4.5V	1.2V @ 250µA	47nC @ 4.5V	2361pF @ 15V	±12V	-	1.5W (Ta)	22 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IRF8788PBF	Infineon Technologies	MOSFET N-CH 30V 24A 8-SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5720pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,336	MOSFET (Metal Oxide)	30V	24A (Ta)	4.5V, 10V	2.35V @ 100µA	66nC @ 4.5V	5720pF @ 15V	±20V	-	2.5W (Ta)	2.8 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AO4450_101	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V 7A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 516pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,352	MOSFET (Metal Oxide)	40V	7A (Ta)	4.5V, 10V	3V @ 250µA	13nC @ 10V	516pF @ 20V	±20V	-	3.1W (Ta)	30 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTD4854N-1G	ON Semiconductor	MOSFET N-CH 25V 15.7A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,280	MOSFET (Metal Oxide)	25V	15.7A (Ta), 128A (Tc)	4.5V, 10V	2.5V @ 250µA	49.2nC @ 4.5V	4600pF @ 12V	±20V	-	1.43W (Ta), 93.75W (Tc)	3.6 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
PHB152NQ03LTA,118	NXP	MOSFET N-CH 25V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,160	MOSFET (Metal Oxide)	25V	75A (Tc)	5V, 10V	2V @ 1mA	36nC @ 5V	3140pF @ 25V	±20V	-	150W (Tc)	4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR024	Vishay Siliconix	MOSFET N-CH 60V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock17,268	MOSFET (Metal Oxide)	60V	14A (Tc)	10V	4V @ 250µA	25nC @ 10V	640pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	100 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFP22N50A	Vishay Siliconix	MOSFET N-CH 500V 22A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 277W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock83,340	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	4V @ 250µA	120nC @ 10V	3450pF @ 25V	±30V	-	277W (Tc)	230 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPP45N06S409AKSA2	Infineon Technologies	MOSFET N-CH 60V 45A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 34µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3785pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock6,800	MOSFET (Metal Oxide)	60V	45A (Tc)	10V	4V @ 34µA	47nC @ 10V	3785pF @ 25V	±20V	-	71W (Tc)	9.4 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
TN0610N3-G-P003	Microchip Technology	MOSFET N-CH 100V 500MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock2,624	MOSFET (Metal Oxide)	100V	500mA (Tj)	3V, 10V	2V @ 1mA	-	150pF @ 25V	±20V	-	1W (Tc)	1.5 Ohm @ 750mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
UPA2820T1S-E2-AT	Renesas Electronics America	MOSFET N-CH 30V 8HVSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 16W (Tc) Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 22A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,704	MOSFET (Metal Oxide)	30V	22A (Tc)	4.5V, 10V	-	50nC @ 10V	2330pF @ 10V	±20V	-	1.5W (Ta), 16W (Tc)	5.3 mOhm @ 22A, 10V	150°C (TJ)	Surface Mount	-	8-PowerWDFN
IRLZ24NPBF	Infineon Technologies	MOSFET N-CH 55V 18A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock76,944	MOSFET (Metal Oxide)	55V	18A (Tc)	4V, 10V	2V @ 250µA	15nC @ 5V	480pF @ 25V	±16V	-	45W (Tc)	60 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPW60R099C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 22A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 490µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1819pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 9.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,872	MOSFET (Metal Oxide)	600V	14A (Tc)	10V	4V @ 490µA	42nC @ 10V	1819pF @ 400V	±20V	-	110W (Tc)	99 mOhm @ 9.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
SI7172DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 200V 25A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 5.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock336,900	MOSFET (Metal Oxide)	200V	25A (Tc)	6V, 10V	4V @ 250µA	77nC @ 10V	2250pF @ 100V	±20V	-	5.4W (Ta), 96W (Tc)	70 mOhm @ 5.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI4427BDY-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 9.7A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 12.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock650,760	MOSFET (Metal Oxide)	30V	9.7A (Ta)	2.5V, 10V	1.4V @ 250µA	70nC @ 4.5V	-	±12V	-	1.5W (Ta)	10.5 mOhm @ 12.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDB050AN06A0	Fairchild/ON Semiconductor	MOSFET N-CH 60V 80A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock17,604	MOSFET (Metal Oxide)	60V	18A (Ta), 80A (Tc)	6V, 10V	4V @ 250µA	80nC @ 10V	3900pF @ 25V	±20V	-	245W (Tc)	5 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MCU120N04-TP	Micro Commercial Co	Interface FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 120A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4645 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tj) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	120A	4.5V, 10V	2.5V @ 250µA	102 nC @ 10 V	4645 pF @ 20 V	±20V	-	110W (Tj)	3.5mOhm @ 15A, 10V	-55°C ~ 150°C	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSC010NE2LSATMA1	Infineon Technologies	MOSFET N-CH 25V 39A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 12 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	Package: -	Stock57,087	MOSFET (Metal Oxide)	25 V	39A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	64 nC @ 10 V	4700 pF @ 12 V	±20V	-	2.5W (Ta), 96W (Tc)	1mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN
IXTH20N65X2	IXYS	MOSFET N-CH 650V 20A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: -	Stock717	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	4.5V @ 250µA	27 nC @ 10 V	1450 pF @ 25 V	±30V	-	290W (Tc)	185mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
NTH4LN095N65S3H	onsemi	POWER MOSFET, N-CHANNEL, SUPERFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.8mA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	30A (Tc)	10V	4V @ 2.8mA	58 nC @ 10 V	2833 pF @ 400 V	±30V	-	208W (Tc)	95mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4	TO-247-4
RS3P070ATTB1	Rohm Semiconductor	PCH -100V -7A POWER MOSFET: RS3P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock9,000	MOSFET (Metal Oxide)	100 V	7A (Ta)	4.5V, 10V	2.5V @ 1mA	115 nC @ 10 V	5150 pF @ 50 V	±20V	-	2W (Ta)	36mOhm @ 7A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
MSJU07N65A-TP	Micro Commercial Co	N-CHANNEL MOSFET, DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,398	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	4V @ 250µA	13 nC @ 10 V	545 pF @ 25 V	±30V	-	63W (Tc)	600mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
2N7002KWA-TP	Micro Commercial Co	N-CHANNEL MOSFET SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 340mA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock8,970	MOSFET (Metal Oxide)	60 V	340mA	4.5V, 10V	2V @ 250µA	-	40 pF @ 10 V	±20V	-	200mW	5Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
DMP32D8UFZ-7B	Diodes Incorporated	MOSFET BVDSS: 25V~30V X2-DFN0606 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 290mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN0606-3 Package / Case: 3-XFDFN	Package: -	Stock28,746	MOSFET (Metal Oxide)	30 V	200mA (Ta)	1.2V, 4.5V	1V @ 250µA	0.35 nC @ 4.5 V	17 pF @ 15 V	±10V	-	290mW (Ta)	5Ohm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN0606-3	3-XFDFN
NC1M120C75GTNG	NextGen Components	SiC MOSFET N 1200V 75mohm 47A 3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.8V @ 5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 1000 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): 288W (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3L Package / Case: TO-247-3	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	47A (Tc)	20V	2.8V @ 5mA	-	1450 pF @ 1000 V	+20V, -5V	-	288W (Ta)	75mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3L	TO-247-3
IRF740LCPBF-BE3	Vishay Siliconix	MOSFET N-CH 400V 10A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,961	MOSFET (Metal Oxide)	400 V	10A (Tc)	-	4V @ 250µA	39 nC @ 10 V	1100 pF @ 25 V	±30V	-	125W (Tc)	550mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTA200N055T2-TRL	IXYS	MOSFET N-CH 55V 200A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	200A (Tc)	10V	4V @ 250µA	109 nC @ 10 V	6970 pF @ 25 V	±20V	-	360W (Tc)	4.2mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB038N12N3GATMA1	Infineon Technologies	MOSFET N-CH 120V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock7,350	MOSFET (Metal Oxide)	120 V	120A (Tc)	10V	4V @ 270µA	211 nC @ 10 V	13800 pF @ 60 V	±20V	-	300W (Tc)	3.8mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
G6K8P15KE	Goford Semiconductor	MOSFET P-CH ESD 150V 12A TO-252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,209	MOSFET (Metal Oxide)	150 V	12A (Tc)	10V	4V @ 250µA	11 nC @ 10 V	1550 pF @ 75 V	±20V	-	60W (Tc)	800mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63