Page 576 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPB80N06S4L07ATMA1
Infineon Technologies

MOSFET N-CH 60V 80A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,208
NVTJD4401NT1G
ON Semiconductor

MOSFET N-CH 20V 0.63A SC-88

Package: -

Stock3,616
NTD6416ANL-1G
ON Semiconductor

MOSFET N-CH 100V 19A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,576
IRLR120ATF
Fairchild/ON Semiconductor

MOSFET N-CH 100V 8.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,952
NTGS3441BT1G
ON Semiconductor

MOSFET P-CH 20V 2.2A 6-TSOP

Package: SOT-23-6

Stock300,300
FQU3P20TU
Fairchild/ON Semiconductor

MOSFET P-CH 200V 2.4A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,048
NTP75N03RG
ON Semiconductor

MOSFET N-CH 25V 9.7A TO220AB

Package: TO-220-3

Stock390,000
BUK6208-40C,118
NXP

MOSFET N-CH 40V 90A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,032
STF25NM60N
STMicroelectronics

MOSFET N-CH 600V 21A TO-220FP

Package: TO-220-3 Full Pack

Stock16,644
AOY2N60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH

Package: TO-251-3 Stub Leads, IPak

Stock5,376
IXFH6N100F
IXYS

MOSFET N-CH 1KV 6A TO247

Package: TO-247-3

Stock6,592
IXTQ26N50P
IXYS

MOSFET N-CH 500V 26A TO-3P

Package: TO-3P-3, SC-65-3

Stock43,152
BSZ086P03NS3 G
Infineon Technologies

MOSFET P-CH 30V 40A TSDSON-8

Package: 8-PowerTDFN

Stock7,680
DMP32D4SFB-7B
Diodes Incorporated

MOSFET P-CH 30V 400MA SOT323

Package: 3-UFDFN

Stock119,616
TK28N65W,S1F
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 27.6A TO247

Package: TO-247-3

Stock6,660
APT40SM120J
Microsemi Corporation

MOSFET N-CH 1200V 32A SOT227

Package: SOT-227-4, miniBLOC

Stock8,172
IRFR224TRPBF
Vishay Siliconix

MOSFET N-CH 250V 3.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock161,880
IRL640A
Fairchild/ON Semiconductor

MOSFET N-CH 200V 18A TO-220

Package: TO-220-3

Stock5,536
MCB85N06Y-TP
Micro Commercial Co

MOSFET N-CH 60V 85A D2PAK

Package: -

Stock92,712
SCTH35N65G2V-7AG
STMicroelectronics

SICFET N-CH 650V 45A H2PAK-7

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPB80N06S4L07ATMA1	Infineon Technologies	MOSFET N-CH 60V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,208	MOSFET (Metal Oxide)	60V	80A (Tc)	4.5V, 10V	2.2V @ 40µA	75nC @ 10V	5680pF @ 25V	±16V	-	79W (Tc)	6.4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVTJD4401NT1G	ON Semiconductor	MOSFET N-CH 20V 0.63A SC-88 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,616	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTD6416ANL-1G	ON Semiconductor	MOSFET N-CH 100V 19A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 74 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,576	MOSFET (Metal Oxide)	100V	19A (Tc)	4.5V, 10V	2.2V @ 250µA	40nC @ 10V	1000pF @ 25V	±20V	-	71W (Tc)	74 mOhm @ 19A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRLR120ATF	Fairchild/ON Semiconductor	MOSFET N-CH 100V 8.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 4.2A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,952	MOSFET (Metal Oxide)	100V	8.4A (Tc)	5V	2V @ 250µA	15nC @ 5V	440pF @ 25V	±20V	-	2.5W (Ta), 35W (Tc)	220 mOhm @ 4.2A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NTGS3441BT1G	ON Semiconductor	MOSFET P-CH 20V 2.2A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock300,300	MOSFET (Metal Oxide)	20V	2.2A (Ta)	2.5V, 4.5V	900mV @ 250µA	9nC @ 4.5V	630pF @ 10V	±8V	-	700mW (Ta)	90 mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
FQU3P20TU	Fairchild/ON Semiconductor	MOSFET P-CH 200V 2.4A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,048	MOSFET (Metal Oxide)	200V	2.4A (Tc)	10V	5V @ 250µA	8nC @ 10V	250pF @ 25V	±30V	-	2.5W (Ta), 37W (Tc)	2.7 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTP75N03RG	ON Semiconductor	MOSFET N-CH 25V 9.7A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	25V	9.7A (Ta)	4.5V, 10V	2V @ 250µA	13.2nC @ 5V	1333pF @ 20V	±20V	-	1.25W (Ta), 74.4W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK6208-40C,118	NXP	MOSFET N-CH 40V 90A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,032	MOSFET (Metal Oxide)	40V	90A (Tc)	4.5V, 10V	2.8V @ 1mA	67nC @ 10V	3720pF @ 25V	±16V	-	128W (Tc)	6.2 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STF25NM60N	STMicroelectronics	MOSFET N-CH 600V 21A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock16,644	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	4V @ 250µA	84nC @ 10V	2400pF @ 50V	±25V	-	40W (Tc)	160 mOhm @ 10.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
AOY2N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 1A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock5,376	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	4.5V @ 250µA	11nC @ 10V	295pF @ 25V	±30V	-	57W (Tc)	4.7 Ohm @ 1A, 10V	-50°C ~ 150°C (TJ)	Through Hole	TO-251	TO-251-3 Stub Leads, IPak
IXFH6N100F	IXYS	MOSFET N-CH 1KV 6A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,592	MOSFET (Metal Oxide)	1000V	6A (Tc)	10V	5.5V @ 2.5mA	54nC @ 10V	1770pF @ 25V	±20V	-	180W (Tc)	1.9 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFH)	TO-247-3
IXTQ26N50P	IXYS	MOSFET N-CH 500V 26A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock43,152	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	5.5V @ 250µA	65nC @ 10V	3600pF @ 25V	±30V	-	400W (Tc)	230 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
BSZ086P03NS3 G	Infineon Technologies	MOSFET P-CH 30V 40A TSDSON-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.1V @ 105µA Gate Charge (Qg) (Max) @ Vgs: 57.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4785pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,680	MOSFET (Metal Oxide)	30V	13.5A (Ta), 40A (Tc)	6V, 10V	3.1V @ 105µA	57.5nC @ 10V	4785pF @ 15V	±25V	-	2.1W (Ta), 69W (Tc)	8.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
DMP32D4SFB-7B	Diodes Incorporated	MOSFET P-CH 30V 400MA SOT323 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1006 (1.0x0.6) Package / Case: 3-UFDFN	Package: 3-UFDFN	Stock119,616	MOSFET (Metal Oxide)	30V	400mA (Ta)	2.5V, 10V	2.3V @ 250µA	1.3nC @ 10V	51pF @ 15V	±20V	-	500mW (Ta)	2.4 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	3-DFN1006 (1.0x0.6)	3-UFDFN
TK28N65W,S1F	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 27.6A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.6mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 13.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,660	MOSFET (Metal Oxide)	650V	27.6A (Ta)	10V	3.5V @ 1.6mA	75nC @ 10V	3000pF @ 300V	±30V	-	230W (Tc)	110 mOhm @ 13.8A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
APT40SM120J	Microsemi Corporation	MOSFET N-CH 1200V 32A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 32A Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3V @ 1mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock8,172	MOSFET (Metal Oxide)	1200V	32A	20V	3V @ 1mA (Typ)	130nC @ 20V	2560pF @ 1000V	+25V, -10V	-	165W (Tc)	100 mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
IRFR224TRPBF	Vishay Siliconix	MOSFET N-CH 250V 3.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock161,880	MOSFET (Metal Oxide)	250V	3.8A (Tc)	10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	1.1 Ohm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL640A	Fairchild/ON Semiconductor	MOSFET N-CH 200V 18A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 9A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,536	MOSFET (Metal Oxide)	200V	18A (Tc)	5V	2V @ 250µA	56nC @ 5V	1705pF @ 25V	±20V	-	110W (Tc)	180 mOhm @ 9A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
MCB85N06Y-TP	Micro Commercial Co	MOSFET N-CH 60V 85A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2498 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock92,712	MOSFET (Metal Oxide)	60 V	85A (Tc)	10V	2.4V @ 250µA	36 nC @ 10 V	2498 pF @ 25 V	±20V	-	85W	13mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCTH35N65G2V-7AG	STMicroelectronics	SICFET N-CH 650V 45A H2PAK-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Request a Quote	SiCFET (Silicon Carbide)	650 V	45A (Tc)	18V, 20V	5V @ 1mA	73 nC @ 20 V	1370 pF @ 400 V	+22V, -10V	-	208W (Tc)	67mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
HUF76633P3-F085	onsemi	MOSFET N-CH 100V 39A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	39A (Tc)	4.5V, 10V	3V @ 250µA	67 nC @ 10 V	1820 pF @ 25 V	±16V	-	145W (Tc)	35mOhm @ 39A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
SIRS5100DP-T1-GE3	Vishay Siliconix	N-CHANNEL 100 V (D-S) MOSFET POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 225A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.4W (Ta), 240W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	39A (Ta), 225A (Tc)	7.5V, 10V	4V @ 250µA	102 nC @ 10 V	5400 pF @ 50 V	±20V	-	7.4W (Ta), 240W (Tc)	2.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
ICE10N60FP	IceMOS Technology	Superjunction MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	10A (Tc)	10V	3.9V @ 250µA	41 nC @ 10 V	1250 pF @ 25 V	±20V	-	35W (Tc)	330mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack, Isolated Tab
GSFP3984	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 150A, 30V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 122W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PPAK (5.1x5.71) Package / Case: 8-PowerTDFN	Package: -	Stock8,979	MOSFET (Metal Oxide)	30 V	150A (Tc)	4.5V, 10V	2.5V @ 250µA	110 nC @ 10 V	7600 pF @ 15 V	±20V	-	122W (Tc)	2.4mOhm @ 30A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	8-PPAK (5.1x5.71)	8-PowerTDFN
FDMA8878-F130	onsemi	30V SINGLE N-CHANNEL POWER TRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	9A (Ta), 10A (Tc)	4.5V, 10V	3V @ 250µA	12 nC @ 10 V	720 pF @ 15 V	±20V	-	900mW (Ta)	16mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
IRF841	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	450 V	8A (Tc)	10V	4V @ 250µA	63 nC @ 10 V	1225 pF @ 25 V	±20V	-	125W (Tc)	850mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
NVB260N65S3	onsemi	SF3 650V EASY 260MOHM D2PAK AUTO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 290µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	4.5V @ 290µA	24 nC @ 10 V	1010 pF @ 400 V	±30V	-	90W (Tc)	260mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
E3M0032120K	Wolfspeed, Inc.	SIC, MOSFET, 32M, 1200V, TO-247- FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.6V @ 10.7mA Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V Vgs (Max): +19V, -8V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	67A (Tc)	15V	3.6V @ 10.7mA	113 nC @ 15 V	3460 pF @ 1000 V	+19V, -8V	-	278W (Tc)	43mOhm @ 38.9A, 15V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4