Page 575 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFC8721ED
Infineon Technologies

MOSFET N-CH WAFER

Package: -

Stock3,312
IRF7457TR
Infineon Technologies

MOSFET N-CH 20V 15A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,864
AO4498EL
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock13,032
HUF76633S3S
Fairchild/ON Semiconductor

MOSFET N-CH 100V 38A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,664
HUF75329P3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 49A TO-220AB

Package: TO-220-3

Stock120,192
FQD1N60TM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 1A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,032
IRF9620
Vishay Siliconix

MOSFET P-CH 200V 3.5A TO-220AB

Package: TO-220-3

Stock507,936
STF20NM65N
STMicroelectronics

MOSFET N-CH 650V 15A TO-220FP

Package: TO-220-3 Full Pack

Stock13,788
IPC60R385CPX1SA1
Infineon Technologies

MOSFET N-CH BARE DIE

Package: -

Stock7,968
IXFP8N50P3
IXYS

MOSFET N-CH 500V 8A TO-220

Package: TO-220-3

Stock6,352
AOW29S50
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 29A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,056
TSM4NB65CH C5G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,264
AO4476A
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 15A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock388,968
IPB60R199CP
Infineon Technologies

MOSFET N-CH 650V 16A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock821,964
IRLL024NPBF
Infineon Technologies

MOSFET N-CH 55V 3.1A SOT223

Package: TO-261-4, TO-261AA

Stock56,976
BSC052N03LS
Infineon Technologies

MOSFET N-CH 30V 17A TDSON-8

Package: 8-PowerTDFN

Stock270,780
BUK9Y59-60E,115
Nexperia USA Inc.

MOSFET N-CH 60V LFPAK

Package: SC-100, SOT-669

Stock15,840
PJD25N06A_L2_00001
Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

Package: -

Stock3,747
TPH3206LDG-TR
Transphorm

GANFET N-CH 600V 17A 3PQFN

Package: -

Request a Quote
R6524KNZC8
Rohm Semiconductor

MOSFET N-CH 650V 24A TO3

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFC8721ED	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,312	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF7457TR	Infineon Technologies	MOSFET N-CH 20V 15A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,864	MOSFET (Metal Oxide)	20V	15A (Ta)	4.5V, 10V	3V @ 250µA	42nC @ 4.5V	3100pF @ 10V	±20V	-	2.5W (Ta)	7 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AO4498EL	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock13,032	MOSFET (Metal Oxide)	30V	18A (Ta)	4.5V, 10V	2.3V @ 250µA	50nC @ 10V	2760pF @ 15V	±20V	-	3.1W (Ta)	5.8 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
HUF76633S3S	Fairchild/ON Semiconductor	MOSFET N-CH 100V 38A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 39A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,664	MOSFET (Metal Oxide)	100V	39A (Tc)	4.5V, 10V	3V @ 250µA	67nC @ 10V	1820pF @ 25V	±16V	-	145W (Tc)	35 mOhm @ 39A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF75329P3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 49A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 49A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock120,192	MOSFET (Metal Oxide)	55V	49A (Tc)	10V	4V @ 250µA	75nC @ 20V	1060pF @ 25V	±20V	-	128W (Tc)	24 mOhm @ 49A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQD1N60TM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 1A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 11.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,032	MOSFET (Metal Oxide)	600V	1A (Tc)	10V	5V @ 250µA	6nC @ 10V	150pF @ 25V	±30V	-	2.5W (Ta), 30W (Tc)	11.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF9620	Vishay Siliconix	MOSFET P-CH 200V 3.5A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock507,936	MOSFET (Metal Oxide)	200V	3.5A (Tc)	10V	4V @ 250µA	22nC @ 10V	350pF @ 25V	±20V	-	40W (Tc)	1.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF20NM65N	STMicroelectronics	MOSFET N-CH 650V 15A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock13,788	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	4V @ 250µA	44nC @ 10V	1280pF @ 50V	±25V	-	30W (Tc)	270 mOhm @ 7.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IPC60R385CPX1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,968	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFP8N50P3	IXYS	MOSFET N-CH 500V 8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,352	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	5V @ 1.5mA	13nC @ 10V	705pF @ 25V	±30V	-	180W (Tc)	800 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
AOW29S50	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 500V 29A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1312pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,056	MOSFET (Metal Oxide)	500V	29A (Tc)	10V	3.9V @ 250µA	26.6nC @ 10V	1312pF @ 100V	±30V	-	357W (Tc)	150 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
TSM4NB65CH C5G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 549pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 3.37 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,264	MOSFET (Metal Oxide)	650V	4A (Tc)	10V	4.5V @ 250µA	13.46nC @ 10V	549pF @ 25V	±30V	-	70W (Tc)	3.37 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
AO4476A	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 15A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock388,968	MOSFET (Metal Oxide)	30V	15A (Ta)	4.5V, 10V	2.5V @ 250µA	24nC @ 10V	1380pF @ 15V	±20V	-	3.1W (Ta)	7.7 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IPB60R199CP	Infineon Technologies	MOSFET N-CH 650V 16A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 660µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock821,964	MOSFET (Metal Oxide)	650V	16A (Tc)	10V	3.5V @ 660µA	43nC @ 10V	1520pF @ 100V	±20V	-	139W (Tc)	199 mOhm @ 9.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLL024NPBF	Infineon Technologies	MOSFET N-CH 55V 3.1A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock56,976	MOSFET (Metal Oxide)	55V	3.1A (Ta)	4V, 10V	2V @ 250µA	15.6nC @ 5V	510pF @ 25V	±16V	-	1W (Ta)	65 mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
BSC052N03LS	Infineon Technologies	MOSFET N-CH 30V 17A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock270,780	MOSFET (Metal Oxide)	30V	17A (Ta), 57A (Tc)	4.5V, 10V	2V @ 250µA	12nC @ 10V	770pF @ 15V	±20V	-	2.5W (Ta), 28W (Tc)	5.2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
BUK9Y59-60E,115	Nexperia USA Inc.	MOSFET N-CH 60V LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock15,840	MOSFET (Metal Oxide)	60V	16.7A (Tc)	5V	2.1V @ 1mA	6.1nC @ 5V	715pF @ 25V	±10V	-	37W (Tc)	52 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PJD25N06A_L2_00001	Panjit International Inc.	60V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock3,747	MOSFET (Metal Oxide)	60 V	5.5A (Ta), 25A (Tc)	4.5V, 10V	2.5V @ 250µA	20 nC @ 10 V	1173 pF @ 25 V	±20V	-	2W (Ta), 40W (Tc)	34mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
TPH3206LDG-TR	Transphorm	GANFET N-CH 600V 17A 3PQFN FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PQFN (8x8) Package / Case: 3-PowerDFN	Package: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	17A (Tc)	8V	2.6V @ 500µA	9.3 nC @ 4.5 V	760 pF @ 480 V	±18V	-	96W (Tc)	180mOhm @ 11A, 8V	-55°C ~ 175°C (TJ)	Surface Mount	3-PQFN (8x8)	3-PowerDFN
R6524KNZC8	Rohm Semiconductor	MOSFET N-CH 650V 24A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	5V @ 750µA	45 nC @ 10 V	1850 pF @ 25 V	±20V	-	74W (Tc)	185mOhm @ 11.3A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
2SK3614-Q-TD-E	onsemi	NCH 4V DRIVE SERIES FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 3.5W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 2A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: PCP Package / Case: TO-243AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	4A (Ta)	4V, 10V	2.6V @ 1mA	7.8 nC @ 10 V	300 pF @ 20 V	±20V	-	1.5W (Ta), 3.5W (Tc)	145mOhm @ 2A, 10V	150°C	Surface Mount	PCP	TO-243AA
FTS1011-TL-E	onsemi	PCH 2.5V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJK03C0DPA-00-J53	Renesas Electronics Corporation	MOSFET N-CH 30V 70A 8WPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 35A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	70A (Ta)	-	2.5V @ 1mA	66 nC @ 4.5 V	11000 pF @ 10 V	-	-	65W (Tc)	2mOhm @ 35A, 10V	-	Surface Mount	8-WPAK	8-PowerWDFN
IRLML6401GTRPBF-ML	MOSLEADER	P -12V SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PMN50EPEX	Nexperia USA Inc.	MOSFET P-CH 30V 4.6A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 793 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560mW (Ta), 6.25mW (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	4.6A (Ta)	4.5V, 10V	3V @ 250µA	20 nC @ 10 V	793 pF @ 15 V	±20V	-	560mW (Ta), 6.25mW (Tc)	45mOhm @ 4.6A, 10V	150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
IRFR224TRPBF-BE3	Vishay Siliconix	N-CHANNEL 250V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	3.8A (Tc)	10V	4V @ 250µA	14 nC @ 10 V	260 pF @ 25 V	±20V	-	2.5W (Ta), 42W (Tc)	1.1Ohm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
TP65H035G4QS	Transphorm	650 V 46.5 A GAN FET HIGH VOLTAG FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TOLL Package / Case: 8-PowerSFN	Package: -	Request a Quote	GaNFET (Gallium Nitride)	650 V	46.5A (Tc)	10V	4.8V @ 1mA	22 nC @ 10 V	1500 pF @ 400 V	±20V	-	156W (Tc)	41mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TOLL	8-PowerSFN
2SJ485-E	onsemi	PCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-