Page 601 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFR3504TRLPBF
Infineon Technologies

MOSFET N-CH 40V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,416
IRFU3504PBF
Infineon Technologies

MOSFET N-CH 40V 30A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,896
IRFSL3307
Infineon Technologies

MOSFET N-CH 75V 130A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,520
AOD4T60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 4A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,024
SI7440DP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 12A PPAK SO-8

Package: PowerPAK? SO-8

Stock135,300
SFH9240
Fairchild/ON Semiconductor

MOSFET P-CH 200V 11A TO-3P

Package: TO-3P-3, SC-65-3

Stock9,156
SI1411DH-T1-E3
Vishay Siliconix

MOSFET P-CH 150V 0.42A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock4,064
IRL3103D1STRR
Vishay Siliconix

MOSFET N-CH 30V 64A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,536
IRFR9220TRL
Vishay Siliconix

MOSFET P-CH 200V 3.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock13,764
AOT3N100
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 1000V 2.8A TO220

Package: TO-220-3

Stock5,536
NTTFS4939NTAG
ON Semiconductor

MOSFET N-CH 30V 8.9A 8WDFN

Package: 8-PowerWDFN

Stock16,560
PMPB85ENEA/FX
Nexperia USA Inc.

PMPB85ENEA/SOT1220/SOT1220

Package: -

Stock3,248
IXFP14N85X
IXYS

MOSFET N-CH 850V 14A TO220-3

Package: TO-220-3

Stock4,160
IRF7811AVTRPBF
Infineon Technologies

MOSFET N-CH 30V 10.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock330,972
PMZ1000UN,315
Nexperia USA Inc.

MOSFET N-CH SOT883

Package: SC-101, SOT-883

Stock3,504
STF32NM50N
STMicroelectronics

MOSFET N CH 500V 22A TO-220FP

Package: TO-220-3 Full Pack

Stock7,596
PSMN045-80YS,115
Nexperia USA Inc.

MOSFET N-CH 80V 24A LFPAK

Package: SC-100, SOT-669

Stock284,970
SISS30DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 15.9A/54.7A PPAK

Package: -

Stock38,838
AONS32310
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 60A/400A 8DFN

Package: -

Stock98,013
IXTA230N075T2-TRL
IXYS

MOSFET N-CH 75V 230A TO263

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFR3504TRLPBF	Infineon Technologies	MOSFET N-CH 40V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,416	MOSFET (Metal Oxide)	40V	30A (Tc)	10V	4V @ 250µA	71nC @ 10V	2150pF @ 25V	±20V	-	140W (Tc)	9.2 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFU3504PBF	Infineon Technologies	MOSFET N-CH 40V 30A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,896	MOSFET (Metal Oxide)	40V	30A (Tc)	10V	4V @ 250µA	71nC @ 10V	2150pF @ 25V	±20V	-	140W (Tc)	9.2 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRFSL3307	Infineon Technologies	MOSFET N-CH 75V 130A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,520	MOSFET (Metal Oxide)	75V	130A (Tc)	10V	4V @ 150µA	180nC @ 10V	5150pF @ 50V	±20V	-	250W (Tc)	6.3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
AOD4T60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 4A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,024	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	5V @ 250µA	15nC @ 10V	460pF @ 100V	±30V	-	83W (Tc)	2.1 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SI7440DP-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 12A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock135,300	MOSFET (Metal Oxide)	30V	12A (Ta)	4.5V, 10V	3V @ 250µA	35nC @ 4.5V	-	±20V	-	1.9W (Ta)	6.5 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SFH9240	Fairchild/ON Semiconductor	MOSFET P-CH 200V 11A TO-3P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 126W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock9,156	MOSFET (Metal Oxide)	200V	11A (Tc)	10V	4V @ 250µA	59nC @ 10V	1585pF @ 25V	±30V	-	126W (Tc)	500 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
SI1411DH-T1-E3	Vishay Siliconix	MOSFET P-CH 150V 0.42A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 420mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock4,064	MOSFET (Metal Oxide)	150V	420mA (Ta)	10V	4.5V @ 100µA	6.3nC @ 10V	-	±20V	-	1W (Ta)	2.6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6 (SOT-363)	6-TSSOP, SC-88, SOT-363
IRL3103D1STRR	Vishay Siliconix	MOSFET N-CH 30V 64A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,536	MOSFET (Metal Oxide)	30V	64A (Tc)	-	1V @ 250µA	43nC @ 4.5V	1900pF @ 25V	-	-	-	14 mOhm @ 34A, 10V	-	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR9220TRL	Vishay Siliconix	MOSFET P-CH 200V 3.6A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock13,764	MOSFET (Metal Oxide)	200V	3.6A (Tc)	10V	4V @ 250µA	20nC @ 10V	340pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
AOT3N100	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 1000V 2.8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 132W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,536	MOSFET (Metal Oxide)	1000V	2.8A (Tc)	10V	4.5V @ 250µA	20nC @ 10V	830pF @ 25V	±30V	-	132W (Tc)	6 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
NTTFS4939NTAG	ON Semiconductor	MOSFET N-CH 30V 8.9A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1979pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta), 29.8W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock16,560	MOSFET (Metal Oxide)	30V	8.9A (Ta), 52A (Tc)	4.5V, 10V	2.2V @ 250µA	28nC @ 10V	1979pF @ 15V	±20V	-	850mW (Ta), 29.8W (Tc)	5.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
PMPB85ENEA/FX	Nexperia USA Inc.	PMPB85ENEA/SOT1220/SOT1220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,248	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFP14N85X	IXYS	MOSFET N-CH 850V 14A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB (IXFP) Package / Case: TO-220-3	Package: TO-220-3	Stock4,160	MOSFET (Metal Oxide)	850V	14A (Tc)	10V	5.5V @ 1mA	30nC @ 10V	1043pF @ 25V	±30V	-	460W (Tc)	550 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB (IXFP)	TO-220-3
IRF7811AVTRPBF	Infineon Technologies	MOSFET N-CH 30V 10.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1801pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock330,972	MOSFET (Metal Oxide)	30V	10.8A (Ta)	4.5V	3V @ 250µA	26nC @ 5V	1801pF @ 10V	±20V	-	2.5W (Ta)	14 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PMZ1000UN,315	Nexperia USA Inc.	MOSFET N-CH SOT883 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock3,504	MOSFET (Metal Oxide)	30V	480mA (Ta)	1.8V, 4.5V	950mV @ 250µA	0.89nC @ 4.5V	43pF @ 25V	±8V	-	350mW (Ta)	1 Ohm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006-3	SC-101, SOT-883
STF32NM50N	STMicroelectronics	MOSFET N CH 500V 22A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1973pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,596	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	4V @ 250µA	62.5nC @ 10V	1973pF @ 50V	±25V	-	35W (Tc)	130 mOhm @ 11A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
PSMN045-80YS,115	Nexperia USA Inc.	MOSFET N-CH 80V 24A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock284,970	MOSFET (Metal Oxide)	80V	24A (Tc)	10V	4V @ 1mA	12.5nC @ 10V	675pF @ 40V	±20V	-	56W (Tc)	45 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
SISS30DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 80V 15.9A/54.7A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Stock38,838	MOSFET (Metal Oxide)	80 V	15.9A (Ta), 54.7A (Tc)	7.5V, 10V	3.8V @ 250µA	40 nC @ 10 V	1666 pF @ 10 V	±20V	-	4.8W (Ta), 57W (Tc)	8.25mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
AONS32310	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 60A/400A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 400A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15350 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 400W (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: -	Stock98,013	MOSFET (Metal Oxide)	30 V	60A (Ta), 400A (Tc)	4.5V, 10V	1.8V @ 250µA	240 nC @ 10 V	15350 pF @ 15 V	±20V	-	6.2W (Ta), 400W (Tc)	1.05mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
IXTA230N075T2-TRL	IXYS	MOSFET N-CH 75V 230A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	75 V	230A (Tc)	10V	4V @ 250µA	178 nC @ 10 V	10500 pF @ 25 V	±20V	-	480W (Tc)	4.2mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
APT130SM70J	Microsemi Corporation	SICFET N-CH 700V 78A SOT227 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 700 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 273W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 60A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 (ISOTOP®) Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	SiCFET (Silicon Carbide)	700 V	78A (Tc)	20V	2.4V @ 1mA	270 nC @ 20 V	3950 pF @ 700 V	+25V, -10V	-	273W (Tc)	45mOhm @ 60A, 20V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
IPAW60R280P7SE8228XKSA1	Infineon Technologies	MOSFET N-CH 600V 12A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 190µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 24W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	4V @ 190µA	18 nC @ 10 V	761 pF @ 400 V	±20V	-	24W (Tc)	280mOhm @ 3.8A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
NVHL110N65S3HF	onsemi	SUPERFER3 FRFET AUTOMOTIVE 110MO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 740µA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2753 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	30A (Tc)	10V	5V @ 740µA	58 nC @ 10 V	2753 pF @ 400 V	±30V	-	240W (Tc)	110mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
MMFTN123	Diotec Semiconductor	MOSFET N-CH 100V 170MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock35,430	MOSFET (Metal Oxide)	100 V	170mA (Ta)	4.5V, 10V	2V @ 1mA	-	73 pF @ 25 V	±20V	-	360mW	6Ohm @ 170mA, 10V	150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
BUK6D72-30EX	Nexperia USA Inc.	MOSFET N-CH 30V 4A/11A 6DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock34,527	MOSFET (Metal Oxide)	30 V	4A (Ta), 11A (Tc)	4.5V, 10V	2.5V @ 250µA	3.3 nC @ 10 V	100 pF @ 15 V	±20V	-	2W (Ta), 15W (Tc)	72mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
IPDD60R055CFD7XTMA1	Infineon Technologies	MOSFET N-CH 600V 52A HDSOP-10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.5V @ 760µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 329W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-10-1 Package / Case: 10-PowerSOP Module	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	52A (Tc)	-	4.5V @ 760µA	67 nC @ 10 V	2724 pF @ 400 V	±20V	-	329W (Tc)	55mOhm @ 15.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-10-1	10-PowerSOP Module
MCU50N06-TP	Micro Commercial Co	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	50A	10V	2.5V @ 250µA	30 nC @ 10 V	900 pF @ 25 V	±20V	-	1.25W	20mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IAUT165N08S5N029ATMA1	Infineon Technologies	MOSFET N-CH 80V 165A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 165A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	165A (Tc)	6V, 10V	3.8V @ 108µA	90 nC @ 10 V	6370 pF @ 40 V	±20V	-	167W (Tc)	2.9mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN