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IRF3707L
Infineon Technologies

MOSFET N-CH 30V 62A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock8,940
NVD6415ANLT4G-VF01
ON Semiconductor

MOSFET N-CH 100V 23A DPAK-4

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,032
IXTP50N085T
IXYS

MOSFET N-CH 85V 50A TO-220

Package: TO-220-3

Stock3,488
FQB3N80TM
Fairchild/ON Semiconductor

MOSFET N-CH 800V 3A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock14,652
FQPF9N15
Fairchild/ON Semiconductor

MOSFET N-CH 150V 6.9A TO-220F

Package: TO-220-3 Full Pack

Stock2,192
STD70N02L-1
STMicroelectronics

MOSFET N-CH 25V 60A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock82,320
STP8NM60N
STMicroelectronics

MOSFET N-CH 600V 7A TO-220

Package: TO-220-3

Stock44,196
STB13NM50N-1
STMicroelectronics

MOSFET N-CH 500V 12A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock256,800
STP11NM60FP
STMicroelectronics

MOSFET N-CH 600V 11A TO220FP

Package: TO-220-3 Full Pack

Stock134,424
SPP07N65C3XKSA1
Infineon Technologies

LOW POWER_LEGACY

Package: -

Stock7,776
DMN90H2D2HCTI
Diodes Incorporated

MOSFET BVDSS: >800V ITO-220AB

Package: TO-220-3 Full Pack, Isolated Tab

Stock4,320
DMT6004SPS-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V POWERDI506

Package: 8-PowerTDFN

Stock5,200
DMN3053L-13
Diodes Incorporated

MOSFET N-CH 30V 4A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock6,000
FDMS8670S
Fairchild/ON Semiconductor

MOSFET N-CH 30V 20A POWER56

Package: 8-PowerTDFN

Stock1,209,348
RRR030P03TL
Rohm Semiconductor

MOSFET P-CH 30V 3A TSMT3

Package: SC-96

Stock1,254,984
STF12N50DM2
STMicroelectronics

N-CHANNEL 500 V, 0.299 OHM TYP.,

Package: TO-220-3 Full Pack

Stock17,508
TPH3206LDGB
Transphorm

GAN FET 650V 16A PQFN88

Package: 3-PowerDFN

Stock7,980
PMXB75UPEZ
Nexperia USA Inc.

MOSFET P-CH 20V DFN1010D-3G

Package: 3-XDFN Exposed Pad

Stock105,792
NTJS4151PT1G
ON Semiconductor

MOSFET P-CH 20V 3.3A SC-88

Package: 6-TSSOP, SC-88, SOT-363

Stock4,290,948
DMJ70H601SK3-13
Diodes Incorporated

MOSFET N-CHANNEL 700V 8A TO252

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF3707L	Infineon Technologies	MOSFET N-CH 30V 62A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock8,940	MOSFET (Metal Oxide)	30V	62A (Tc)	4.5V, 10V	3V @ 250µA	19nC @ 4.5V	1990pF @ 15V	±20V	-	87W (Tc)	12.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
NVD6415ANLT4G-VF01	ON Semiconductor	MOSFET N-CH 100V 23A DPAK-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1024pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,032	MOSFET (Metal Oxide)	100V	23A (Tc)	4.5V, 10V	2V @ 250µA	20nC @ 4.5V	1024pF @ 25V	±20V	-	83W (Tc)	52 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP50N085T	IXYS	MOSFET N-CH 85V 50A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,488	MOSFET (Metal Oxide)	85V	50A (Tc)	10V	4V @ 25µA	34nC @ 10V	1460pF @ 25V	±20V	-	130W (Tc)	23 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQB3N80TM	Fairchild/ON Semiconductor	MOSFET N-CH 800V 3A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,652	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	5V @ 250µA	19nC @ 10V	690pF @ 25V	±30V	-	-	5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF9N15	Fairchild/ON Semiconductor	MOSFET N-CH 150V 6.9A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,192	MOSFET (Metal Oxide)	150V	6.9A (Tc)	10V	4V @ 250µA	13nC @ 10V	410pF @ 25V	±25V	-	44W (Tc)	400 mOhm @ 3.45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
STD70N02L-1	STMicroelectronics	MOSFET N-CH 25V 60A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock82,320	MOSFET (Metal Oxide)	25V	60A (Tc)	5V, 10V	1.8V @ 250µA	32nC @ 10V	1400pF @ 16V	±20V	-	60W (Tc)	8 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STP8NM60N	STMicroelectronics	MOSFET N-CH 600V 7A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock44,196	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	4V @ 250µA	19nC @ 10V	560pF @ 50V	±25V	-	70W (Tc)	650 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STB13NM50N-1	STMicroelectronics	MOSFET N-CH 500V 12A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock256,800	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 250µA	30nC @ 10V	960pF @ 50V	±25V	-	100W (Tc)	320 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STP11NM60FP	STMicroelectronics	MOSFET N-CH 600V 11A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock134,424	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	30nC @ 10V	1000pF @ 25V	±30V	-	35W (Tc)	450 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
SPP07N65C3XKSA1	Infineon Technologies	LOW POWER_LEGACY FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,776	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN90H2D2HCTI	Diodes Incorporated	MOSFET BVDSS: >800V ITO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1487pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock4,320	MOSFET (Metal Oxide)	900V	6A (Tc)	10V	5V @ 250µA	20.3nC @ 10V	1487pF @ 25V	±30V	-	40W (Tc)	2.2 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220AB	TO-220-3 Full Pack, Isolated Tab
DMT6004SPS-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V POWERDI506 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4556pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,200	MOSFET (Metal Oxide)	60V	23A (Ta)	10V	4V @ 250µA	95.4nC @ 10V	4556pF @ 30V	±20V	-	2.5W (Ta)	3.1 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
DMN3053L-13	Diodes Incorporated	MOSFET N-CH 30V 4A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 676pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 760mW (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,000	MOSFET (Metal Oxide)	30V	4A (Ta)	2.5V, 10V	1.4V @ 250µA	17.2nC @ 10V	676pF @ 15V	±12V	-	760mW (Ta)	45 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
FDMS8670S	Fairchild/ON Semiconductor	MOSFET N-CH 30V 20A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock1,209,348	MOSFET (Metal Oxide)	30V	20A (Ta), 42A (Tc)	4.5V, 10V	3V @ 1mA	73nC @ 10V	4000pF @ 15V	±20V	-	2.5W (Ta), 78W (Tc)	3.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
RRR030P03TL	Rohm Semiconductor	MOSFET P-CH 30V 3A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock1,254,984	MOSFET (Metal Oxide)	30V	3A (Ta)	4V, 10V	2.5V @ 1mA	5.2nC @ 5V	480pF @ 10V	±20V	-	1W (Ta)	75 mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
STF12N50DM2	STMicroelectronics	N-CHANNEL 500 V, 0.299 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 628pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock17,508	MOSFET (Metal Oxide)	500V	11A (Tc)	10V	5V @ 250µA	16nC @ 10V	628pF @ 100V	±25V	-	25W (Tc)	350 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
TPH3206LDGB	Transphorm	GAN FET 650V 16A PQFN88 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 81W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (8x8) Package / Case: 3-PowerDFN	Package: 3-PowerDFN	Stock7,980	GaNFET (Gallium Nitride)	650V	16A (Tc)	8V	2.6V @ 500µA	9.3nC @ 4.5V	760pF @ 480V	±18V	-	81W (Tc)	180 mOhm @ 11A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (8x8)	3-PowerDFN
PMXB75UPEZ	Nexperia USA Inc.	MOSFET P-CH 20V DFN1010D-3G FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 317mW (Ta), 8.33W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1010D-3 Package / Case: 3-XDFN Exposed Pad	Package: 3-XDFN Exposed Pad	Stock105,792	MOSFET (Metal Oxide)	20V	2.9A (Ta)	1.2V, 4.5V	1V @ 250µA	12nC @ 4.5V	608pF @ 10V	±8V	-	317mW (Ta), 8.33W (Tc)	85 mOhm @ 2.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1010D-3	3-XDFN Exposed Pad
NTJS4151PT1G	ON Semiconductor	MOSFET P-CH 20V 3.3A SC-88 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock4,290,948	MOSFET (Metal Oxide)	20V	3.3A (Ta)	1.8V, 4.5V	1.2V @ 250µA	10nC @ 4.5V	850pF @ 10V	±12V	-	1W (Ta)	60 mOhm @ 3.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-88/SC70-6/SOT-363	6-TSSOP, SC-88, SOT-363
DMJ70H601SK3-13	Diodes Incorporated	MOSFET N-CHANNEL 700V 8A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 686 pF @ 50 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	700 V	8A (Tc)	10V	4V @ 250µA	20.9 nC @ 10 V	686 pF @ 50 V	±30V	-	125W (Tc)	600mOhm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
30507-001-XTD	onsemi	FLEXTRONICS: XHIC-03A2B-0 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCAC65N06Y-TP	Micro Commercial Co	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tj) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	65A (Tc)	4.5V, 10V	2.5V @ 250µA	34.5 nC @ 10 V	1740 pF @ 30 V	±20V	-	100W (Tj)	5.7mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
BSC011N03LSTATMA1	Infineon Technologies	MOSFET N-CH 30V 39A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 115W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	30 V	39A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	48 nC @ 4.5 V	6300 pF @ 15 V	±20V	-	3W (Ta), 115W (Tc)	1.1mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
2SJ187-TD-E	onsemi	PCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NP75N04VUK-E1-AY	Renesas Electronics Corporation	MOSFET N-CH 40V 75A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 38A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: TO-252 (MP-3ZP) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock32,088	MOSFET (Metal Oxide)	40 V	75A (Tc)	10V	4V @ 250µA	45 nC @ 10 V	2400 pF @ 25 V	±20V	-	1.2W (Ta), 75W (Tc)	5.7mOhm @ 38A, 10V	175°C	Surface Mount	TO-252 (MP-3ZP)	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJA3401A_R1_00001-ML	MOSLEADER	P -30V -3.6A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCH1337-TL-HX	onsemi	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMP1009UFDFQ-7	Diodes Incorporated	MOSFET P-CH 12V 11A 6UDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Stock15,564	MOSFET (Metal Oxide)	12 V	11A (Ta)	1.8V, 4.5V	1V @ 250µA	44 nC @ 8 V	1860 pF @ 10 V	±8V	-	2W (Ta)	11mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad