Page 63 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SFT1440-TL-E
ON Semiconductor

MOSFET N-CH 600V 1.5A TP-FA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,216
2SK2993(TE24L,Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 250V 20A TO220SM

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,768
NTD2955G
ON Semiconductor

MOSFET P-CH 60V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock382,332
ZXM61P02FTC
Diodes Incorporated

MOSFET P-CH 20V 0.9A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock666,672
2SJ067400L
Panasonic Electronic Components

MOSFET P-CH 30V 100MA SSSMINI-3

Package: SOT-723

Stock5,824
NTB65N02RT4G
ON Semiconductor

MOSFET N-CH 25V 7.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock38,724
IPP80P03P405AKSA1
Infineon Technologies

MOSFET P-CH TO220-3

Package: TO-220-3

Stock4,544
IXFK15N100Q
IXYS

MOSFET N-CH 1000V 15A TO-264

Package: TO-264-3, TO-264AA

Stock7,680
APT9M100B
Microsemi Corporation

MOSFET N-CH 1000V 9A TO-247

Package: TO-247-3

Stock103,464
SFT1452-W
ON Semiconductor

MOSFET N-CH 250V 3A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,376
IPB037N06N3 G
Infineon Technologies

MOSFET N-CH 60V 90A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock717,048
STB18NF30
STMicroelectronics

MOSFET N-CH 330V 18A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,608
FDS3512
Fairchild/ON Semiconductor

MOSFET N-CH 80V 4A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock382,752
CSD16408Q5
Texas Instruments

MOSFET N-CH 25V 113A 5X6 8SON

Package: 8-PowerTDFN

Stock5,936
TK7P65W,RQ
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 6.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock16,554
STW10NK80Z
STMicroelectronics

MOSFET N-CH 800V 9A TO-247

Package: TO-247-3

Stock43,800
FQPF13N50CF
Fairchild/ON Semiconductor

MOSFET N-CH 500V 13A TO-220F

Package: TO-220-3 Full Pack

Stock16,764
FDS6630A
Fairchild/ON Semiconductor

MOSFET N-CH 30V 6.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,414,500
SI7386DP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 12A PPAK SO-8

Package: PowerPAK? SO-8

Stock239,928
DMP2110UFDBQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V U-DFN2020-6

Package: -

Stock15,849

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SFT1440-TL-E	ON Semiconductor	MOSFET N-CH 600V 1.5A TP-FA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 8.1 Ohm @ 800mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TP-FA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,216	MOSFET (Metal Oxide)	600V	1.5A (Ta)	10V	-	6.3nC @ 10V	130pF @ 30V	±30V	-	1W (Ta), 20W (Tc)	8.1 Ohm @ 800mA, 10V	150°C (TJ)	Surface Mount	TP-FA	TO-252-3, DPak (2 Leads + Tab), SC-63
2SK2993(TE24L,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 250V 20A TO220SM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220SM Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,768	MOSFET (Metal Oxide)	250V	20A (Ta)	10V	3.5V @ 1mA	100nC @ 10V	4000pF @ 10V	±20V	-	100W (Tc)	105 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	TO-220SM	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD2955G	ON Semiconductor	MOSFET P-CH 60V 12A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tj) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock382,332	MOSFET (Metal Oxide)	60V	12A (Ta)	10V	4V @ 250µA	30nC @ 10V	750pF @ 25V	±20V	-	55W (Tj)	180 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
ZXM61P02FTC	Diodes Incorporated	MOSFET P-CH 20V 0.9A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 600 mOhm @ 610mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock666,672	MOSFET (Metal Oxide)	20V	900mA (Ta)	2.7V, 4.5V	1.5V @ 250µA	3.5nC @ 4.5V	150pF @ 15V	±12V	-	625mW (Ta)	600 mOhm @ 610mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
2SJ067400L	Panasonic Electronic Components	MOSFET P-CH 30V 100MA SSSMINI-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 18 Ohm @ 10mA, 4V Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSSMini3-F1 Package / Case: SOT-723	Package: SOT-723	Stock5,824	MOSFET (Metal Oxide)	30V	100mA (Ta)	2.5V, 4V	1.5V @ 1µA	-	12pF @ 3V	±12V	-	100mW (Ta)	18 Ohm @ 10mA, 4V	125°C (TJ)	Surface Mount	SSSMini3-F1	SOT-723
NTB65N02RT4G	ON Semiconductor	MOSFET N-CH 25V 7.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock38,724	MOSFET (Metal Oxide)	25V	7.6A (Tc)	4.5V, 10V	2V @ 250µA	9.5nC @ 4.5V	1330pF @ 20V	±20V	-	1.04W (Ta), 62.5W (Tc)	8.2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP80P03P405AKSA1	Infineon Technologies	MOSFET P-CH TO220-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 253µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock4,544	MOSFET (Metal Oxide)	30V	80A (Tc)	10V	4V @ 253µA	130nC @ 10V	10300pF @ 25V	±20V	-	137W (Tc)	5 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IXFK15N100Q	IXYS	MOSFET N-CH 1000V 15A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,680	MOSFET (Metal Oxide)	1000V	15A (Tc)	10V	5V @ 4mA	170nC @ 10V	4500pF @ 25V	±20V	-	360W (Tc)	700 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
APT9M100B	Microsemi Corporation	MOSFET N-CH 1000V 9A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2605pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 335W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	1000V	9A (Tc)	10V	5V @ 1mA	80nC @ 10V	2605pF @ 25V	±30V	-	335W (Tc)	1.4 Ohm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
SFT1452-W	ON Semiconductor	MOSFET N-CH 250V 3A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK/TP Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,376	MOSFET (Metal Oxide)	250V	3A (Ta)	10V	4.5V @ 1mA	4.2nC @ 10V	210pF @ 20V	±30V	-	1W (Ta), 26W (Tc)	2.4 Ohm @ 1.5A, 10V	150°C (TJ)	Through Hole	IPAK/TP	TO-251-3 Short Leads, IPak, TO-251AA
IPB037N06N3 G	Infineon Technologies	MOSFET N-CH 60V 90A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock717,048	MOSFET (Metal Oxide)	60V	90A (Tc)	10V	4V @ 90µA	98nC @ 10V	11000pF @ 30V	±20V	-	188W (Tc)	3.7 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB18NF30	STMicroelectronics	MOSFET N-CH 330V 18A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 330V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,608	MOSFET (Metal Oxide)	330V	18A (Tc)	10V	4V @ 250µA	44nC @ 10V	1650pF @ 25V	±20V	-	150W (Tc)	180 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDS3512	Fairchild/ON Semiconductor	MOSFET N-CH 80V 4A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 70 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock382,752	MOSFET (Metal Oxide)	80V	4A (Ta)	6V, 10V	4V @ 250µA	18nC @ 10V	634pF @ 40V	±20V	-	2.5W (Ta)	70 mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
CSD16408Q5	Texas Instruments	MOSFET N-CH 25V 113A 5X6 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 113A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 12.5V Vgs (Max): +16V, -12V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,936	MOSFET (Metal Oxide)	25V	22A (Ta), 113A (Tc)	4.5V, 10V	2.1V @ 250µA	8.9nC @ 4.5V	1300pF @ 12.5V	+16V, -12V	-	3.1W (Ta)	4.5 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
TK7P65W,RQ	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 6.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock16,554	MOSFET (Metal Oxide)	650V	6.8A (Ta)	10V	3.5V @ 250µA	15nC @ 10V	490pF @ 300V	±30V	-	60W (Tc)	800 mOhm @ 3.4A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STW10NK80Z	STMicroelectronics	MOSFET N-CH 800V 9A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock43,800	MOSFET (Metal Oxide)	800V	9A (Tc)	10V	4.5V @ 100µA	72nC @ 10V	2180pF @ 25V	±30V	-	160W (Tc)	900 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
FQPF13N50CF	Fairchild/ON Semiconductor	MOSFET N-CH 500V 13A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock16,764	MOSFET (Metal Oxide)	500V	13A (Tc)	10V	4V @ 250µA	56nC @ 10V	2055pF @ 25V	±30V	-	48W (Tc)	540 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDS6630A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 6.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 38 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,414,500	MOSFET (Metal Oxide)	30V	6.5A (Ta)	4.5V, 10V	3V @ 250µA	7nC @ 5V	460pF @ 15V	±20V	-	2.5W (Ta)	38 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI7386DP-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 12A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock239,928	MOSFET (Metal Oxide)	30V	12A (Ta)	4.5V, 10V	2.5V @ 250µA	18nC @ 4.5V	-	±20V	-	1.8W (Ta)	7 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
DMP2110UFDBQ-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V U-DFN2020-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type B) Package / Case: 6-UDFN Exposed Pad	Package: -	Stock15,849	MOSFET (Metal Oxide)	20 V	3.5A (Ta)	2.5V, 4.5V	1V @ 250µA	6 nC @ 4.5 V	443 pF @ 10 V	±10V	-	800mW (Ta)	80mOhm @ 2.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type B)	6-UDFN Exposed Pad
NVMFS6H824NWFT1G	onsemi	MOSFET N-CH 80V 19A/103A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 115W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,455	MOSFET (Metal Oxide)	80 V	19A (Ta), 103A (Tc)	10V	4V @ 140µA	38 nC @ 10 V	2470 pF @ 40 V	±20V	-	3.8W (Ta), 115W (Tc)	4.5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads
DMT12H060LCA9-7	Diodes Incorporated	MOSFET BVDSS: 101V~250V X4-DSN15 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 115 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V Vgs (Max): ±5.5V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DSN1515-9 Package / Case: 9-SMD, No Lead	Package: -	Request a Quote	MOSFET (Metal Oxide)	115 V	3.5A (Ta)	1.5V, 4.5V	1.4V @ 250µA	8 nC @ 5 V	560 pF @ 50 V	±5.5V	-	1.1W (Ta)	85mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DSN1515-9	9-SMD, No Lead
APT20M11JLL	Microchip Technology	MOSFET N-CH 200V 176A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 176A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10320 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	176A (Tc)	-	5V @ 5mA	180 nC @ 10 V	10320 pF @ 25 V	-	-	-	11mOhm @ 88A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
TW015N120C-S1F	Toshiba Semiconductor and Storage	G3 1200V SIC-MOSFET TO-247 15MO FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5V @ 11.7mA Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 431W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock81	SiCFET (Silicon Carbide)	1200 V	100A (Tc)	18V	5V @ 11.7mA	158 nC @ 18 V	6000 pF @ 800 V	+25V, -10V	-	431W (Tc)	20mOhm @ 50A, 18V	175°C	Through Hole	TO-247	TO-247-3
IPB037N06N3GATMA1	Infineon Technologies	MOSFET N-CH 60V 90A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock12,000	MOSFET (Metal Oxide)	60 V	90A (Tc)	10V	4V @ 90µA	98 nC @ 10 V	11000 pF @ 30 V	±20V	-	188W (Tc)	3.7mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PJD30N04S-AU_L2_002A1	Panjit International Inc.	40V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	12.5A (Ta), 43A (Tc)	4.5V, 10V	2.3V @ 50µA	13 nC @ 10 V	744 pF @ 25 V	±20V	-	3W (Ta), 36W (Tc)	10.6mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
ISP25DP06NMXTSA1	Infineon Technologies	MOSFET P-CH 60V 1.9A SOT223-4 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: -	Stock11,919	MOSFET (Metal Oxide)	60 V	1.9A (Ta)	10V	4V @ 270µA	10.8 nC @ 10 V	420 pF @ 30 V	±20V	-	1.8W (Ta), 4.2W (Tc)	250mOhm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
DMN3061SWQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT323 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 490mW (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock19,800	MOSFET (Metal Oxide)	30 V	2.7A (Ta)	3.3V, 10V	1.8V @ 250µA	3.5 nC @ 4.5 V	278 pF @ 15 V	±20V	-	490mW (Ta)	60mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323