Page 66 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLIZ24NPBF
Infineon Technologies

MOSFET N-CH 55V 14A TO220FP

Package: TO-220-3 Full Pack

Stock5,616
IRFR3704TRL
Infineon Technologies

MOSFET N-CH 20V 75A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock18,648
APT4012BVRG
Microsemi Corporation

MOSFET N-CH 400V 37A TO247AD

Package: TO-247-3

Stock6,624
TPCA8025(TE12L,Q,M
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 40A 8SOIC ADV

Package: 8-PowerVDFN

Stock6,928
IXTP220N075T
IXYS

MOSFET N-CH 75V 220A TO-220

Package: TO-220-3

Stock7,408
NTD4302-1G
ON Semiconductor

MOSFET N-CH 30V 8.4A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,152
FQI4N25TU
Fairchild/ON Semiconductor

MOSFET N-CH 250V 3.6A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,312
2N7002TC
Diodes Incorporated

MOSFET N-CH 60V 0.115A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock115,200
MTD2955VT4
ON Semiconductor

MOSFET P-CH 60V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock62,628
IRFBC40STRL
Vishay Siliconix

MOSFET N-CH 600V 6.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock34,224
BSP129H6906XTSA1
Infineon Technologies

MOSFET N-CH 240V 350MA SOT223

Package: TO-261-4, TO-261AA

Stock6,496
NVMFS6B05NWFT1G
ON Semiconductor

MOSFET N-CH 100V 104A SO8FL

Package: 8-PowerTDFN

Stock5,632
IRLR110TR
Vishay Siliconix

MOSFET N-CH 100V 4.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,488
IXTU1R4N60P
IXYS

MOSFET N-CH 600V 1.4A TO251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,160
NTMFS5C673NLT3G
ON Semiconductor

MOSFET N-CH 60V SO8FL

Package: 8-PowerTDFN

Stock3,584
DMT4011LFG-7
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

Package: 8-PowerVDFN

Stock3,920
AON7752
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 15A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock177,516
SPI08N80C3
Infineon Technologies

MOSFET N-CH 800V 8A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock49,128
STD15N65M5
STMicroelectronics

MOSFET N CH 650V 11A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,456
FDMC7570S
Fairchild/ON Semiconductor

MOSFET N-CH 25V 40A POWER33

Package: 8-PowerTDFN

Stock6,672

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLIZ24NPBF	Infineon Technologies	MOSFET N-CH 55V 14A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,616	MOSFET (Metal Oxide)	55V	14A (Tc)	4V, 10V	2V @ 250µA	15nC @ 5V	480pF @ 25V	±16V	-	26W (Tc)	60 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRFR3704TRL	Infineon Technologies	MOSFET N-CH 20V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock18,648	MOSFET (Metal Oxide)	20V	75A (Tc)	10V	3V @ 250µA	19nC @ 4.5V	1996pF @ 10V	±20V	-	90W (Tc)	9.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
APT4012BVRG	Microsemi Corporation	MOSFET N-CH 400V 37A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock6,624	MOSFET (Metal Oxide)	400V	37A (Tc)	10V	4V @ 1mA	290nC @ 10V	5400pF @ 25V	±30V	-	370W (Tc)	120 mOhm @ 18.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
TPCA8025(TE12L,Q,M	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 40A 8SOIC ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,928	MOSFET (Metal Oxide)	30V	40A (Ta)	4.5V, 10V	2.5V @ 1mA	49nC @ 10V	2200pF @ 10V	±20V	-	1.6W (Ta), 45W (Tc)	3.5 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
IXTP220N075T	IXYS	MOSFET N-CH 75V 220A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,408	MOSFET (Metal Oxide)	75V	220A (Tc)	10V	4V @ 250µA	165nC @ 10V	7700pF @ 25V	±20V	-	480W (Tc)	4.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTD4302-1G	ON Semiconductor	MOSFET N-CH 30V 8.4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,152	MOSFET (Metal Oxide)	30V	8.4A (Ta), 68A (Tc)	4.5V, 10V	3V @ 250µA	80nC @ 10V	2400pF @ 24V	±20V	-	1.04W (Ta), 75W (Tc)	10 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FQI4N25TU	Fairchild/ON Semiconductor	MOSFET N-CH 250V 3.6A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,312	MOSFET (Metal Oxide)	250V	3.6A (Tc)	10V	5V @ 250µA	5.6nC @ 10V	200pF @ 25V	±30V	-	3.13W (Ta), 52W (Tc)	1.75 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
2N7002TC	Diodes Incorporated	MOSFET N-CH 60V 0.115A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock115,200	MOSFET (Metal Oxide)	60V	115mA (Ta)	5V, 10V	2.5V @ 250µA	-	50pF @ 25V	±20V	-	330mW (Ta)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
MTD2955VT4	ON Semiconductor	MOSFET P-CH 60V 12A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock62,628	MOSFET (Metal Oxide)	60V	12A (Tc)	10V	4V @ 250µA	30nC @ 10V	770pF @ 25V	±20V	-	60W (Tc)	230 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFBC40STRL	Vishay Siliconix	MOSFET N-CH 600V 6.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock34,224	MOSFET (Metal Oxide)	600V	6.2A (Tc)	10V	4V @ 250µA	60nC @ 10V	1300pF @ 25V	±20V	-	3.1W (Ta), 130W (Tc)	1.2 Ohm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSP129H6906XTSA1	Infineon Technologies	MOSFET N-CH 240V 350MA SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 108pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock6,496	MOSFET (Metal Oxide)	240V	350mA (Ta)	0V, 10V	1V @ 108µA	5.7nC @ 5V	108pF @ 25V	±20V	Depletion Mode	1.8W (Ta)	6 Ohm @ 350mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
NVMFS6B05NWFT1G	ON Semiconductor	MOSFET N-CH 100V 104A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 165W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,632	MOSFET (Metal Oxide)	100V	-	10V	4V @ 250µA	44nC @ 10V	3100pF @ 25V	±16V	-	3.8W (Ta), 165W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
IRLR110TR	Vishay Siliconix	MOSFET N-CH 100V 4.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,488	MOSFET (Metal Oxide)	100V	4.3A (Tc)	4V, 5V	2V @ 250µA	6.1nC @ 5V	250pF @ 25V	±10V	-	2.5W (Ta), 25W (Tc)	540 mOhm @ 2.6A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTU1R4N60P	IXYS	MOSFET N-CH 600V 1.4A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 700mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,160	MOSFET (Metal Oxide)	600V	1.4A (Tc)	10V	5.5V @ 25µA	5.2nC @ 10V	140pF @ 25V	±30V	-	50W (Tc)	9 Ohm @ 700mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
NTMFS5C673NLT3G	ON Semiconductor	MOSFET N-CH 60V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,584	MOSFET (Metal Oxide)	60V	-	4.5V, 10V	2V @ 35µA	9.5nC @ 10V	880pF @ 25V	±20V	-	3.6W (Ta), 46W (Tc)	9.2 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
DMT4011LFG-7	Diodes Incorporated	MOSFET BVDSS: 31V 40V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 20V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 15.6W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,920	MOSFET (Metal Oxide)	40V	30A (Tc)	4.5V, 10V	3V @ 250µA	15.1nC @ 10V	767pF @ 20V	+20V, -16V	-	15.6W (Tc)	11 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerVDFN
AON7752	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 15A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3x3) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock177,516	MOSFET (Metal Oxide)	30V	15A (Ta), 16A (Tc)	4.5V, 10V	2.5V @ 250µA	15nC @ 10V	605pF @ 15V	±20V	-	3.1W (Ta), 20W (Tc)	8.2 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3x3)	8-PowerSMD, Flat Leads
SPI08N80C3	Infineon Technologies	MOSFET N-CH 800V 8A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 470µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock49,128	MOSFET (Metal Oxide)	800V	8A (Tc)	10V	3.9V @ 470µA	60nC @ 10V	1100pF @ 100V	±20V	-	104W (Tc)	650 mOhm @ 5.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
STD15N65M5	STMicroelectronics	MOSFET N CH 650V 11A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,456	MOSFET (Metal Oxide)	650V	11A (Tc)	10V	5V @ 250µA	22nC @ 10V	816pF @ 100V	±25V	-	85W (Tc)	340 mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMC7570S	Fairchild/ON Semiconductor	MOSFET N-CH 25V 40A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4410pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 59W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 27A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,672	MOSFET (Metal Oxide)	25V	27A (Ta), 40A (Tc)	4.5V, 10V	3V @ 1mA	68nC @ 10V	4410pF @ 13V	±20V	-	2.3W (Ta), 59W (Tc)	2 mOhm @ 27A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerTDFN
BUK7M15-60EX	Nexperia USA Inc.	MOSFET N-CH 60V MLFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 42.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1262pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: SOT-1210, 8-LFPAK33 (5-Lead)	Stock16,704	MOSFET (Metal Oxide)	60V	42.9A (Tc)	10V	4V @ 1mA	19.4nC @ 10V	1262pF @ 25V	±20V	-	62W (Tc)	15 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
IRFP1405PBF	Infineon Technologies	MOSFET N-CH 55V 95A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 95A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock20,484	MOSFET (Metal Oxide)	55V	95A (Tc)	10V	4V @ 250µA	180nC @ 10V	5600pF @ 25V	±20V	-	310W (Tc)	5.3 mOhm @ 95A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IXFK360N15T2	IXYS	MOSFET N-CH 150V 360A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 715nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 47500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1670W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,704	MOSFET (Metal Oxide)	150V	360A (Tc)	10V	5V @ 8mA	715nC @ 10V	47500pF @ 25V	±20V	-	1670W (Tc)	4 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
DMG6402LDM-7	Diodes Incorporated	MOSFET N-CH 30V 5.3A SOT26 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.12W (Ta) Rds On (Max) @ Id, Vgs: 27 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	Package: SOT-23-6	Stock36,000	MOSFET (Metal Oxide)	30V	5.3A (Ta)	4.5V, 10V	2V @ 250µA	9.2nC @ 10V	404pF @ 15V	±20V	-	1.12W (Ta)	27 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-26	SOT-23-6
MCB145N06Y-TP	Micro Commercial Co	N-CHANNEL MOSFET, D2-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 30 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 35 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tj) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock3,366	MOSFET (Metal Oxide)	60 V	145A (Tc)	4.5V, 10V	2.5V @ 250µA	34 nC @ 30 V	2000 pF @ 35 V	±20V	-	150W (Tj)	7.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
XP2332GEN	YAGEO XSEMI	MOSFET N-CH 600V 51MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 51mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V Vgs (Max): ±32V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 72Ohm @ 60mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock3,000	MOSFET (Metal Oxide)	600 V	51mA (Ta)	10V	5V @ 250µA	3.2 nC @ 10 V	64 pF @ 25 V	±32V	-	500mW (Ta)	72Ohm @ 60mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IPDQ65R060CFD7AXTMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 820µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	Package: -	Stock1,500	MOSFET (Metal Oxide)	650 V	45A (Tc)	10V	4.5V @ 820µA	65 nC @ 10 V	3288 pF @ 400 V	±20V	-	272W (Tc)	60mOhm @ 16.4A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
RV5A040APTCR1	Rohm Semiconductor	MOSFET P-CH 12V 4A DFN1616-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V Vgs (Max): -8V, 0V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1616-8S Package / Case: 6-PowerWFDFN	Package: -	Stock9,000	MOSFET (Metal Oxide)	12 V	4A (Ta)	1.5V, 4.5V	1V @ 1mA	16 nC @ 4.5 V	2000 pF @ 6 V	-8V, 0V	-	700mW (Ta)	62mOhm @ 4A, 4.5V	150°C (TJ)	Surface Mount	DFN1616-8S	6-PowerWFDFN