Page 60 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLZ44NLPBF
Infineon Technologies

MOSFET N-CH 55V 47A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,552
NTD4857N-35G
ON Semiconductor

MOSFET N-CH 25V 12A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock2,320
STY34NB50
STMicroelectronics

MOSFET N-CH 500V 34A MAX247

Package: TO-247-3

Stock92,232
PH6030L,115
NXP

MOSFET N-CH 30V 76.7A LFPAK

Package: SC-100, SOT-669

Stock2,432
BUK9508-55B,127
Nexperia USA Inc.

MOSFET N-CH 55V 75A TO220AB

Package: TO-220-3

Stock5,696
DMT4005SCT
Diodes Incorporated

MOSFET NCH 40V 100A TO220AB

Package: TO-220-3

Stock6,656
AOTF8N65
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 8A TO220F

Package: TO-220-3 Full Pack

Stock60,252
SSR1N60BTM_WS
Fairchild/ON Semiconductor

MOSFET N-CH 600V 0.9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,160
STDLED625
STMicroelectronics

MOSFET N-CH 620V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,248
IXTF1R4N450
IXYS

2500V TO 4500V VERY HI VOLT PWR

Package: i4-Pac?-5 (3 leads)

Stock4,624
IPA60R180P7XKSA1
Infineon Technologies

MOSFET N-CH 650V 18A TO220

Package: TO-220-3 Full Pack

Stock6,420
IXTH21N50
IXYS

MOSFET N-CH 500V 21A TO-247

Package: TO-247-3

Stock104,220
IRFH5206TRPBF
Infineon Technologies

MOSFET N-CH 60V 16A 8-PQFN

Package: 8-PowerVDFN

Stock6,816
CSD17577Q5A
Texas Instruments

MOSFET N-CH 30V 60A 8VSON

Package: 8-PowerVDFN

Stock26,250
IRLS3036TRLPBF
Infineon Technologies

MOSFET N-CH 60V 195A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock112,044
IRF3805STRLPBF
Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock29,400
BSS138-7-F
Diodes Incorporated

MOSFET N-CH 50V 200MA SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,221,240
NTH4L070N120M3S
onsemi

SILICON CARBIDE (SIC) MOSFET EL

Package: -

Stock1,173
RQJ0603LGDQAWS-H6
Renesas Electronics Corporation

P CH MOS FET POWER SWITCHING

Package: -

Request a Quote
SISH617DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 13.9A/35A PPAK

Package: -

Stock51,588

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLZ44NLPBF	Infineon Technologies	MOSFET N-CH 55V 47A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,552	MOSFET (Metal Oxide)	55V	47A (Tc)	4V, 10V	2V @ 250µA	48nC @ 5V	1700pF @ 25V	±16V	-	3.8W (Ta), 110W (Tc)	22 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
NTD4857N-35G	ON Semiconductor	MOSFET N-CH 25V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock2,320	MOSFET (Metal Oxide)	25V	12A (Ta), 78A (Tc)	4.5V, 10V	2.5V @ 250µA	24nC @ 4.5V	1960pF @ 12V	±20V	-	1.31W (Ta), 56.6W (Tc)	5.7 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
STY34NB50	STMicroelectronics	MOSFET N-CH 500V 34A MAX247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 223nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 17A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: MAX247? Package / Case: TO-247-3	Package: TO-247-3	Stock92,232	MOSFET (Metal Oxide)	500V	34A (Tc)	10V	5V @ 250µA	223nC @ 10V	9100pF @ 25V	±30V	-	450W (Tc)	130 mOhm @ 17A, 10V	150°C (TJ)	Through Hole	MAX247?	TO-247-3
PH6030L,115	NXP	MOSFET N-CH 30V 76.7A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 76.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,432	MOSFET (Metal Oxide)	30V	76.7A (Tc)	4.5V, 10V	2.15V @ 1mA	15.2nC @ 4.5V	2260pF @ 12V	±20V	-	62.5W (Tc)	6 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BUK9508-55B,127	Nexperia USA Inc.	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5280pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 203W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,696	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	45nC @ 5V	5280pF @ 25V	±15V	-	203W (Tc)	7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
DMT4005SCT	Diodes Incorporated	MOSFET NCH 40V 100A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3062pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,656	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	4V @ 250µA	49.1nC @ 10V	3062pF @ 20V	±20V	-	2.3W (Ta), 104W (Tc)	4.7 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
AOTF8N65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 8A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock60,252	MOSFET (Metal Oxide)	650V	8A (Tc)	10V	4.5V @ 250µA	28nC @ 10V	1400pF @ 25V	±30V	-	50W (Tc)	1.15 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
SSR1N60BTM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 600V 0.9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 12 Ohm @ 450mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,160	MOSFET (Metal Oxide)	600V	900mA (Tc)	10V	4V @ 250µA	7.7nC @ 10V	215pF @ 25V	±30V	-	2.5W (Ta), 28W (Tc)	12 Ohm @ 450mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STDLED625	STMicroelectronics	MOSFET N-CH 620V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,248	MOSFET (Metal Oxide)	620V	5A (Tc)	10V	4.5V @ 50µA	35nC @ 10V	890pF @ 50V	±30V	-	70W (Tc)	1.6 Ohm @ 2.1A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTF1R4N450	IXYS	2500V TO 4500V VERY HI VOLT PWR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4500V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 40 Ohm @ 50mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC? Package / Case: i4-Pac?-5 (3 leads)	Package: i4-Pac?-5 (3 leads)	Stock4,624	MOSFET (Metal Oxide)	4500V	1.4A (Tc)	10V	6V @ 250µA	88nC @ 10V	3300pF @ 25V	±20V	-	190W (Tc)	40 Ohm @ 50mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC?	i4-Pac?-5 (3 leads)
IPA60R180P7XKSA1	Infineon Technologies	MOSFET N-CH 650V 18A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,420	MOSFET (Metal Oxide)	650V	18A (Tc)	10V	4V @ 280µA	25nC @ 10V	1081pF @ 400V	±20V	-	26W (Tc)	180 mOhm @ 5.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IXTH21N50	IXYS	MOSFET N-CH 500V 21A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock104,220	MOSFET (Metal Oxide)	500V	21A (Tc)	10V	4V @ 250µA	190nC @ 10V	4200pF @ 25V	±20V	-	300W (Tc)	250 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IRFH5206TRPBF	Infineon Technologies	MOSFET N-CH 60V 16A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,816	MOSFET (Metal Oxide)	60V	16A (Ta), 89A (Tc)	10V	4V @ 100µA	60nC @ 10V	2490pF @ 25V	±20V	-	3.6W (Ta), 100W (Tc)	6.7 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerVDFN
CSD17577Q5A	Texas Instruments	MOSFET N-CH 30V 60A 8VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 53W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (3x3.15) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock26,250	MOSFET (Metal Oxide)	30V	60A (Ta)	4.5V, 10V	1.8V @ 250µA	35nC @ 10V	2310pF @ 15V	±20V	-	3W (Ta), 53W (Tc)	4.2 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSONP (3x3.15)	8-PowerVDFN
IRLS3036TRLPBF	Infineon Technologies	MOSFET N-CH 60V 195A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock112,044	MOSFET (Metal Oxide)	60V	195A (Tc)	4.5V, 10V	2.5V @ 250µA	140nC @ 4.5V	11210pF @ 50V	±16V	-	380W (Tc)	2.4 mOhm @ 165A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3805STRLPBF	Infineon Technologies	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7960pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock29,400	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	290nC @ 10V	7960pF @ 25V	±20V	-	300W (Tc)	3.3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSS138-7-F	Diodes Incorporated	MOSFET N-CH 50V 200MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,221,240	MOSFET (Metal Oxide)	50V	200mA (Ta)	10V	1.5V @ 250µA	-	50pF @ 10V	±20V	-	300mW (Ta)	3.5 Ohm @ 220mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NTH4L070N120M3S	onsemi	SILICON CARBIDE (SIC) MOSFET EL FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.4V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock1,173	SiC (Silicon Carbide Junction Transistor)	1200 V	34A (Tc)	18V	4.4V @ 7mA	57 nC @ 18 V	1230 pF @ 800 V	+22V, -10V	-	160W (Tc)	87mOhm @ 15A, 18V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
RQJ0603LGDQAWS-H6	Renesas Electronics Corporation	P CH MOS FET POWER SWITCHING FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SISH617DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 13.9A/35A PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8SH Package / Case: PowerPAK® 1212-8SH	Package: -	Stock51,588	MOSFET (Metal Oxide)	30 V	13.9A (Ta), 35A (Tc)	4.5V, 10V	2.5V @ 250µA	59 nC @ 10 V	1800 pF @ 15 V	±25V	-	3.7W (Ta), 52W (Tc)	12.3mOhm @ 13.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8SH	PowerPAK® 1212-8SH
R6511ENXC7G	Rohm Semiconductor	650V 11A TO-220FM, LOW-NOISE POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock420	MOSFET (Metal Oxide)	650 V	11A (Ta)	10V	4V @ 320µA	32 nC @ 10 V	670 pF @ 25 V	±20V	-	53W (Tc)	400mOhm @ 3.8A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
STB41N40DM6AG	STMicroelectronics	AUTOMOTIVE-GRADE N-CHANNEL 400 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 20.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	400 V	41A (Tc)	10V	5V @ 250µA	53 nC @ 10 V	2310 pF @ 100 V	±25V	-	250W (Tc)	65mOhm @ 20.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMT6011LSS-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V SO-8 T&R 2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1072 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	10.6A (Ta)	4.5V, 10V	2.5V @ 250µA	22.2 nC @ 10 V	1072 pF @ 30 V	±20V	-	1.4W (Ta)	11mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IPB091N06N-G	Infineon Technologies	MOSFET N-CHAN D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 8.8mOhm @ 80A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	80A (Tc)	-	4V @ 130µA	81 nC @ 10 V	2800 pF @ 30 V	-	-	-	8.8mOhm @ 80A, 10V	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NP80N04NHE-S18-AY	Renesas Electronics Corporation	MOSFET N-CH 40V 80A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.8W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	80A (Tc)	-	4V @ 250µA	60 nC @ 10 V	3300 pF @ 25 V	-	-	1.8W (Ta), 120W (Tc)	8mOhm @ 40A, 10V	175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2PAK, TO-262AA
FQD12P10TM-F085	onsemi	MOSFET P-CH 100V 9.4A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 4.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	9.4A (Tc)	10V	4V @ 250µA	27 nC @ 10 V	800 pF @ 25 V	±30V	-	2.5W (Ta), 50W (Tc)	290mOhm @ 4.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
MCH5802-TL-E	Sanyo	P-CHANNEL SILICON MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NP88N055KHE-E1-AY	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 88A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 288W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 44A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: TO-263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	88A	10V	4V @ 250µA	200 nC @ 10 V	11400 pF @ 25 V	±20V	-	1.8W (Ta), 288W (Tc)	3.9mOhm @ 44A, 10V	175°C	Surface Mount	TO-263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB