Page 70 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLR7833TRRPBF
Infineon Technologies

MOSFET N-CH 30V 140A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,688
IRF1902PBF
Infineon Technologies

MOSFET N-CH 20V 4.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,120
IRFS17N20D
Infineon Technologies

MOSFET N-CH 200V 16A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock347,580
SI4886DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 9.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock653,232
SI4642DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 34A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock246,588
NTD32N06-1G
ON Semiconductor

MOSFET N-CH 60V 32A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,480
IPD65R380E6ATMA1
Infineon Technologies

MOSFET N-CH 650V 10.6A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,376
TK12A55D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 550V 12A TO-220SIS

Package: TO-220-3 Full Pack

Stock3,248
IXFP12N50P
IXYS

MOSFET N-CH 500V 12A TO-220

Package: TO-220-3

Stock4,144
AOW2918
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 13A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,888
NTTFS4C65NTWG
ON Semiconductor

MOSFET N-CH 30V 27A U8FL

Package: 8-PowerWDFN

Stock2,368
STU2N62K3
STMicroelectronics

MOSFET N-CH 620V 2.2A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,696
BUK7109-75ATE,118
Nexperia USA Inc.

MOSFET N-CH 75V 75A D2PAK

Package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

Stock6,304
PSMN7R6-100BSEJ
Nexperia USA Inc.

MOSFET N-CH 100V D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,160
IRFH7936TRPBF
Infineon Technologies

MOSFET N-CH 30V 20A PQFN

Package: 8-PowerVDFN

Stock125,484
BSZ130N03MS G
Infineon Technologies

MOSFET N-CH 30V 35A TSDSON-8

Package: 8-PowerTDFN

Stock48,912
SIUD403ED-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 500MA 0806

Package: PowerPAK? 0806

Stock51,456
BSO130P03S H
Infineon Technologies

MOSFET P-CH 30V 9.2A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock21,720
SSM3J332R,LF
Toshiba Semiconductor and Storage

MOSFET P CH 30V 6A 2-3Z1A

Package: SOT-23-3 Flat Leads

Stock313,752
RJK0391DPA-WS-J53
Renesas Electronics Corporation

POWER TRANSISTOR, MOSFET

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLR7833TRRPBF	Infineon Technologies	MOSFET N-CH 30V 140A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,688	MOSFET (Metal Oxide)	30V	140A (Tc)	4.5V, 10V	2.3V @ 250µA	50nC @ 4.5V	4010pF @ 15V	±20V	-	140W (Tc)	4.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF1902PBF	Infineon Technologies	MOSFET N-CH 20V 4.2A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 85 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,120	MOSFET (Metal Oxide)	20V	4.2A (Ta)	2.7V, 4.5V	700mV @ 250µA	7.5nC @ 4.5V	310pF @ 15V	±12V	-	2.5W (Ta)	85 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFS17N20D	Infineon Technologies	MOSFET N-CH 200V 16A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock347,580	MOSFET (Metal Oxide)	200V	16A (Tc)	10V	5.5V @ 250µA	50nC @ 10V	1100pF @ 25V	±30V	-	3.8W (Ta), 140W (Tc)	170 mOhm @ 9.8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4886DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 9.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock653,232	MOSFET (Metal Oxide)	30V	9.5A (Ta)	4.5V, 10V	800mV @ 250µA (Min)	20nC @ 5V	-	±20V	-	1.56W (Ta)	10 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4642DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 34A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5540pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs: 3.75 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock246,588	MOSFET (Metal Oxide)	30V	34A (Tc)	4.5V, 10V	3V @ 1mA	110nC @ 10V	5540pF @ 15V	±20V	-	3.5W (Ta), 7.8W (Tc)	3.75 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTD32N06-1G	ON Semiconductor	MOSFET N-CH 60V 32A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Rds On (Max) @ Id, Vgs: 26 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,480	MOSFET (Metal Oxide)	60V	32A (Ta)	10V	4V @ 250µA	60nC @ 10V	1725pF @ 25V	±20V	-	1.5W (Ta), 93.75W (Tj)	26 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IPD65R380E6ATMA1	Infineon Technologies	MOSFET N-CH 650V 10.6A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,376	MOSFET (Metal Oxide)	650V	10.6A (Tc)	10V	3.5V @ 320µA	39nC @ 10V	710pF @ 100V	±20V	-	83W (Tc)	380 mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
TK12A55D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 12A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 570 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,248	MOSFET (Metal Oxide)	550V	12A (Ta)	10V	4V @ 1mA	28nC @ 10V	1550pF @ 25V	±30V	-	45W (Tc)	570 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
IXFP12N50P	IXYS	MOSFET N-CH 500V 12A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,144	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	5.5V @ 1mA	29nC @ 10V	1830pF @ 25V	±30V	-	200W (Tc)	500 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
AOW2918	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 13A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 267W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,888	MOSFET (Metal Oxide)	100V	13A (Ta), 90A (Tc)	10V	3.9V @ 250µA	53nC @ 10V	3430pF @ 50V	±20V	-	2.1W (Ta), 267W (Tc)	7 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
NTTFS4C65NTWG	ON Semiconductor	MOSFET N-CH 30V 27A U8FL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,368	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
STU2N62K3	STMicroelectronics	MOSFET N-CH 620V 2.2A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,696	MOSFET (Metal Oxide)	620V	2.2A (Tc)	10V	4.5V @ 50µA	15nC @ 10V	340pF @ 50V	±30V	-	45W (Tc)	3.6 Ohm @ 1.1A, 10V	150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
BUK7109-75ATE,118	Nexperia USA Inc.	MOSFET N-CH 75V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V Vgs (Max): ±20V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-426 Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	Package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	Stock6,304	MOSFET (Metal Oxide)	75V	75A (Tc)	10V	4V @ 1mA	121nC @ 10V	4700pF @ 25V	±20V	Temperature Sensing Diode	272W (Tc)	9 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-426	TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
PSMN7R6-100BSEJ	Nexperia USA Inc.	MOSFET N-CH 100V D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7110pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 296W (Tc) Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,160	MOSFET (Metal Oxide)	100V	75A (Tj)	10V	4V @ 1mA	128nC @ 10V	7110pF @ 50V	±20V	-	296W (Tc)	7.6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFH7936TRPBF	Infineon Technologies	MOSFET N-CH 30V 20A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock125,484	MOSFET (Metal Oxide)	30V	20A (Ta), 54A (Tc)	4.5V, 10V	2.35V @ 50µA	26nC @ 4.5V	2360pF @ 15V	±20V	-	3.1W (Ta)	4.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerVDFN
BSZ130N03MS G	Infineon Technologies	MOSFET N-CH 30V 35A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock48,912	MOSFET (Metal Oxide)	30V	9A (Ta), 35A (Tc)	4.5V, 10V	2V @ 250µA	17nC @ 10V	1300pF @ 15V	±20V	-	2.1W (Ta), 25W (Tc)	11.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
SIUD403ED-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 500MA 0806 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 300mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 0806 Package / Case: PowerPAK? 0806	Package: PowerPAK? 0806	Stock51,456	MOSFET (Metal Oxide)	20V	500mA (Ta)	1.5V, 4.5V	900mV @ 250µA	1nC @ 4.5V	31pF @ 10V	±8V	-	1.25W (Ta)	1.25 Ohm @ 300mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 0806	PowerPAK? 0806
BSO130P03S H	Infineon Technologies	MOSFET P-CH 30V 9.2A 8DSO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.2V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock21,720	MOSFET (Metal Oxide)	30V	9.2A (Ta)	10V	2.2V @ 140µA	81nC @ 10V	3520pF @ 25V	±25V	-	1.56W (Ta)	13 mOhm @ 11.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	P-DSO-8	8-SOIC (0.154", 3.90mm Width)
SSM3J332R,LF	Toshiba Semiconductor and Storage	MOSFET P CH 30V 6A 2-3Z1A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	Package: SOT-23-3 Flat Leads	Stock313,752	MOSFET (Metal Oxide)	30V	6A (Ta)	1.8V, 10V	1.2V @ 1mA	8.2nC @ 4.5V	560pF @ 15V	±12V	-	1W (Ta)	42 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
RJK0391DPA-WS-J53	Renesas Electronics Corporation	POWER TRANSISTOR, MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STW70N60DM6-4	STMicroelectronics	MOSFET N-CH 600V 62A TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 31A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock450	MOSFET (Metal Oxide)	600 V	62A (Tc)	10V	4.75V @ 250µA	99 nC @ 10 V	4360 pF @ 100 V	±25V	-	390W (Tc)	42mOhm @ 31A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4	TO-247-4
AOB190A60CL	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 20A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock5,856	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	4.6V @ 250µA	34 nC @ 10 V	1935 pF @ 100 V	±30V	-	208W (Tc)	190mOhm @ 7.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MCH6445-TL-E	onsemi	MOSFET N-CH 60V 4A MCPH6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 20 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 6-MCPH Package / Case: 6-SMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	4A (Ta)	-	-	10 nC @ 10 V	505 pF @ 20 V	-	-	-	78mOhm @ 2A, 10V	-	Surface Mount	6-MCPH	6-SMD, Flat Leads
SSM3K347R-LF	Toshiba Semiconductor and Storage	MOSFET N-CH 38V 2A SOT23F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 38 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	Package: -	Stock38,610	MOSFET (Metal Oxide)	38 V	2A (Ta)	4V, 10V	2.4V @ 1mA	2.5 nC @ 10 V	86 pF @ 10 V	±20V	-	2W (Ta)	340mOhm @ 1A, 10V	150°C	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SQ4401CEY-T1_GE3	Vishay Siliconix	AUTOMOTIVE P-CHANNEL 40 V (D-S) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.14W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock5,976	MOSFET (Metal Oxide)	40 V	17.3A (Tc)	4.5V, 10V	2.5V @ 250µA	115 nC @ 10 V	4250 pF @ 20 V	±20V	-	7.14W (Tc)	14mOhm @ 10.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI2101A-TP	Micro Commercial Co	P-CHANNEL MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2A Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 450mW Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock7,941	MOSFET (Metal Oxide)	20 V	2A	1.8V, 4.5V	1V @ 250µA	3.9 nC @ 4.5 V	290 pF @ 10 V	±10V	-	450mW	130mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
IXTY64N055T-TRL	IXYS	MOSFET N-CH 55V 64A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	64A (Tc)	10V	4V @ 25µA	37 nC @ 10 V	1420 pF @ 25 V	±20V	-	130W (Tc)	13mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
AO3459-ML	MOSLEADER	P -30V -2.6A SOT23-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-