Page 67 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRLS3034
Infineon Technologies

MOSFET N-CH 40V 343A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,056
APT5020BN
Microsemi Corporation

MOSFET N-CH 500V 28A TO247AD

Package: TO-247-3

Stock61,200
GP1M009A090H
Global Power Technologies Group

MOSFET N-CH 900V 9A TO220

Package: TO-220-3

Stock3,040
SI1426DH-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 2.8A SC-70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock485,688
AOD4102
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 19A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock206,040
FQD2N60TF
Fairchild/ON Semiconductor

MOSFET N-CH 600V 2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,976
FDG313N_D87Z
Fairchild/ON Semiconductor

MOSFET N-CH 25V 0.95A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock6,448
IRFR020PBF
Vishay Siliconix

MOSFET N-CH 60V 14A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock13,464
IRL530L
Vishay Siliconix

MOSFET N-CH 100V 15A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,952
APT38F80B2
Microsemi Corporation

MOSFET N-CH 800V 41A T-MAX

Package: TO-247-3 Variant

Stock7,856
IXTR40P50P
IXYS

MOSFET P-CH 500V 22A ISOPLUS247

Package: ISOPLUS247?

Stock7,744
STL9P3LLH6
STMicroelectronics

MOSFET PCH 30V 9A POWERFLAT

Package: 8-PowerVDFN

Stock6,832
SIHG24N65E-GE3
Vishay Siliconix

MOSFET N-CH 650V 24A TO247AC

Package: TO-247-3

Stock6,060
DMN63D8LW-7
Diodes Incorporated

MOSFET N-CH 30V 0.38A SOT323

Package: SC-70, SOT-323

Stock2,384
TK25N60X,S1F
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 25A TO-247

Package: TO-247-3

Stock7,904
IRFS7534PBF
Infineon Technologies

MOSFET N CH 60V 195A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock17,520
FQD9N25TM
Fairchild/ON Semiconductor

MOSFET N-CH 250V 7.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock25,500
DMN2015UFDE-7
Diodes Incorporated

MOSFET N-CH 20V 10.5A U-DFN

Package: 6-UDFN Exposed Pad

Stock718,236
SI3457CDV-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 5.1A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock877,116
SIR462DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 30A PPAK SO-8

Package: PowerPAK? SO-8

Stock2,013,636

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRLS3034	Infineon Technologies	MOSFET N-CH 40V 343A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 162nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 10315pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 195A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,056	MOSFET (Metal Oxide)	40V	195A (Tc)	4.5V, 10V	2.5V @ 250µA	162nC @ 4.5V	10315pF @ 25V	±20V	-	375W (Tc)	1.7 mOhm @ 195A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APT5020BN	Microsemi Corporation	MOSFET N-CH 500V 28A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock61,200	MOSFET (Metal Oxide)	500V	28A (Tc)	10V	4V @ 1mA	210nC @ 10V	3500pF @ 25V	±30V	-	360W (Tc)	200 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
GP1M009A090H	Global Power Technologies Group	MOSFET N-CH 900V 9A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2324pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock3,040	MOSFET (Metal Oxide)	900V	9A (Tc)	10V	4V @ 250µA	65nC @ 10V	2324pF @ 25V	±30V	-	290W (Tc)	1.4 Ohm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
SI1426DH-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 2.8A SC-70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock485,688	MOSFET (Metal Oxide)	30V	2.8A (Ta)	4.5V, 10V	2.5V @ 250µA	3nC @ 4.5V	-	±20V	-	1W (Ta)	75 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6 (SOT-363)	6-TSSOP, SC-88, SOT-363
AOD4102	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 19A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.2W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock206,040	MOSFET (Metal Oxide)	30V	8A (Ta), 19A (Tc)	4.5V, 10V	3V @ 250µA	6.6nC @ 10V	360pF @ 15V	±20V	-	4.2W (Ta), 21W (Tc)	37 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD2N60TF	Fairchild/ON Semiconductor	MOSFET N-CH 600V 2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,976	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	5V @ 250µA	11nC @ 10V	350pF @ 25V	±30V	-	2.5W (Ta), 45W (Tc)	4.7 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDG313N_D87Z	Fairchild/ON Semiconductor	MOSFET N-CH 25V 0.95A SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock6,448	MOSFET (Metal Oxide)	25V	950mA (Ta)	2.7V, 4.5V	1.5V @ 250µA	2.3nC @ 4.5V	50pF @ 10V	±8V	-	750mW (Ta)	450 mOhm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
IRFR020PBF	Vishay Siliconix	MOSFET N-CH 60V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock13,464	MOSFET (Metal Oxide)	60V	14A (Tc)	10V	4V @ 250µA	25nC @ 10V	640pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	100 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL530L	Vishay Siliconix	MOSFET N-CH 100V 15A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 160 mOhm @ 9A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,952	MOSFET (Metal Oxide)	100V	15A (Tc)	4V, 5V	2V @ 250µA	28nC @ 5V	930pF @ 25V	±10V	-	-	160 mOhm @ 9A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
APT38F80B2	Microsemi Corporation	MOSFET N-CH 800V 41A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8070pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock7,856	MOSFET (Metal Oxide)	800V	41A (Tc)	10V	5V @ 2.5mA	260nC @ 10V	8070pF @ 25V	±30V	-	1040W (Tc)	240 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
IXTR40P50P	IXYS	MOSFET P-CH 500V 22A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock7,744	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	4V @ 1mA	205nC @ 10V	11500pF @ 25V	±20V	-	312W (Tc)	260 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
STL9P3LLH6	STMicroelectronics	MOSFET PCH 30V 9A POWERFLAT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,832	MOSFET (Metal Oxide)	30V	9A (Tc)	4.5V, 10V	1V @ 250µA	24nC @ 4.5V	2615pF @ 25V	±20V	-	3W (Ta)	15 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (3.3x3.3)	8-PowerVDFN
SIHG24N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 24A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock6,060	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 250µA	122nC @ 10V	2740pF @ 100V	±30V	-	250W (Tc)	145 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
DMN63D8LW-7	Diodes Incorporated	MOSFET N-CH 30V 0.38A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23.2pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock2,384	MOSFET (Metal Oxide)	30V	380mA (Ta)	2.5V, 10V	1.5V @ 250µA	0.9nC @ 10V	23.2pF @ 25V	±20V	-	300mW (Ta)	2.8 Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
TK25N60X,S1F	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 25A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,904	MOSFET (Metal Oxide)	600V	25A (Ta)	10V	3.5V @ 1.2mA	40nC @ 10V	2400pF @ 300V	±30V	-	180W (Tc)	125 mOhm @ 7.5A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
IRFS7534PBF	Infineon Technologies	MOSFET N CH 60V 195A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10034pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock17,520	MOSFET (Metal Oxide)	60V	195A (Tc)	6V, 10V	3.7V @ 250µA	279nC @ 10V	10034pF @ 25V	±20V	-	294W (Tc)	2.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQD9N25TM	Fairchild/ON Semiconductor	MOSFET N-CH 250V 7.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock25,500	MOSFET (Metal Oxide)	250V	7.4A (Tc)	10V	5V @ 250µA	20nC @ 10V	700pF @ 25V	±30V	-	2.5W (Ta), 55W (Tc)	420 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
DMN2015UFDE-7	Diodes Incorporated	MOSFET N-CH 20V 10.5A U-DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1779pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 660mW (Ta) Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 8.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock718,236	MOSFET (Metal Oxide)	20V	10.5A (Ta)	1.5V, 4.5V	1.1V @ 250µA	45.6nC @ 10V	1779pF @ 10V	±12V	-	660mW (Ta)	11.6 mOhm @ 8.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type E)	6-UDFN Exposed Pad
SI3457CDV-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 5.1A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3W (Tc) Rds On (Max) @ Id, Vgs: 74 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock877,116	MOSFET (Metal Oxide)	30V	5.1A (Tc)	4.5V, 10V	3V @ 250µA	15nC @ 10V	450pF @ 15V	±20V	-	2W (Ta), 3W (Tc)	74 mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SIR462DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 30A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc) Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock2,013,636	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	3V @ 250µA	30nC @ 10V	1155pF @ 15V	±20V	-	4.8W (Ta), 41.7W (Tc)	7.9 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
MCG25P03-TP	Micro Commercial Co	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tj) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333 Package / Case: 8-VDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	25A (Tc)	4.5V, 10V	2V @ 250µA	28 nC @ 10 V	1385 pF @ 15 V	±20V	-	62.5W (Tj)	19mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN3333	8-VDFN Exposed Pad
DI080N06PQ	Diotec Semiconductor	MOSFET POWERQFN 5X6 N 65V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 65 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	65 V	80A (Tc)	4.5V, 10V	3V @ 250µA	56 nC @ 10 V	3500 pF @ 30 V	±20V	-	80W (Tc)	3.6mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (5x6)	8-PowerTDFN
NP60N04ILF-E1-AZ	Renesas	NP60N04ILF-E1-AZ - SWITCHINGN-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: TO-252 (MP-3Z) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	75 nC @ 10 V	3900 pF @ 25 V	±20V	-	1.2W (Ta), 100W (Tc)	6.5mOhm @ 30A, 10V	175°C	Surface Mount	TO-252 (MP-3Z)	TO-252-3, DPAK (2 Leads + Tab), SC-63
RFP2N20	Harris Corporation	N-CHANNEL, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	2A (Tc)	10V	4V @ 250µA	-	200 pF @ 25 V	±20V	-	25W (Tc)	3.5Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
AONS66450	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V 5X6 DFN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP65R060CFD7XKSA1	Infineon Technologies	650V FET COOLMOS TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 860µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: -	Stock1,290	MOSFET (Metal Oxide)	650 V	36A (Tc)	10V	4.5V @ 860µA	68 nC @ 10 V	3288 pF @ 400 V	±20V	-	171W (Tc)	60mOhm @ 16.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
RQ5P010SNTL	Rohm Semiconductor	MOSFET N-CH 100V 1A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: -	Stock39,009	MOSFET (Metal Oxide)	100 V	1A (Ta)	4V, 10V	2.5V @ 1mA	3.5 nC @ 5 V	140 pF @ 25 V	±20V	-	700mW (Ta)	520mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
NVMFWS024N06CT1G	onsemi	T6 60V SG HIGHER RDS-ON PORTFOLI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.4W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	8A (Ta), 25A (Tc)	10V	4V @ 20µA	5.7 nC @ 10 V	333 pF @ 30 V	±20V	-	3.4W (Ta), 28W (Tc)	22mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads