Page 69 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BUZ73H3046XKSA1
Infineon Technologies

MOSFET N-CH 200V 5.5A TO220-3

Package: TO-220-3

Stock5,136
BSS139 E6327
Infineon Technologies

MOSFET N-CH 250V 100MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,472
IRF6621TR1PBF
Infineon Technologies

MOSFET N-CH 30V 12A DIRECTFET

Package: DirectFET? Isometric SQ

Stock23,520
NTLJS3A18PZTXG
ON Semiconductor

MOSFET P-CH 20V 8.4A WDFN6

Package: 6-WDFN Exposed Pad

Stock4,336
2SK3827
ON Semiconductor

MOSFET N-CH 100V 40A TO-220

Package: TO-220-3

Stock5,904
HUF75321S3S
Fairchild/ON Semiconductor

MOSFET N-CH 55V 35A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,880
IRF7493PBF
Infineon Technologies

MOSFET N-CH 80V 9.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock20,304
IXKP13N60C5M
IXYS

MOSFET N-CH 600V 6.5A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock2,304
NVMFS5C460NLWFAFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock2,016
MCH3375-TL-W
ON Semiconductor

MOSFET P-CH 30V 1.6A MCPH3

Package: 3-SMD, Flat Leads

Stock3,520
IXFH220N06T3
IXYS

60V/220A TRENCHT3 HIPERFET MOSFE

Package: TO-247-3

Stock3,872
IRFS4310TRLPBF
Infineon Technologies

MOSFET N-CH 100V 130A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock25,332
IRFR1205TRPBF
Infineon Technologies

MOSFET N-CH 55V 44A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,284,516
CSD16301Q2
Texas Instruments

MOSFET N-CH 25V 6-SON

Package: 6-SMD, Flat Leads

Stock773,844
AOI600A70
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 8.5A TO251A

Package: -

Request a Quote
RF1S50N06LE
Harris Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
FDPF5N50UTYDTU
Fairchild Semiconductor

TRANS MOSFET N-CH 500V 4A T/R

Package: -

Request a Quote
PJA3415A_R1_00001-ML
MOSLEADER

P -20V -4.5A SOT-23

Package: -

Request a Quote
TSM9409CS
Taiwan Semiconductor Corporation

-60V, -3.5A, SINGLE P-CHANNEL PO

Package: -

Request a Quote
HUFA76609D3ST_NL
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BUZ73H3046XKSA1	Infineon Technologies	MOSFET N-CH 200V 5.5A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,136	MOSFET (Metal Oxide)	200V	7A (Tc)	10V	4V @ 1mA	-	530pF @ 25V	±20V	-	40W (Tc)	400 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
BSS139 E6327	Infineon Technologies	MOSFET N-CH 250V 100MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1V @ 56µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 76pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,472	MOSFET (Metal Oxide)	250V	100mA (Ta)	0V, 10V	1V @ 56µA	3.5nC @ 5V	76pF @ 25V	±20V	Depletion Mode	360mW (Ta)	14 Ohm @ 0.1mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
IRF6621TR1PBF	Infineon Technologies	MOSFET N-CH 30V 12A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 12A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SQ Package / Case: DirectFET? Isometric SQ	Package: DirectFET? Isometric SQ	Stock23,520	MOSFET (Metal Oxide)	30V	12A (Ta), 55A (Tc)	4.5V, 10V	2.25V @ 250µA	17.5nC @ 4.5V	1460pF @ 15V	±20V	-	2.2W (Ta), 42W (Tc)	9.1 mOhm @ 12A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SQ	DirectFET? Isometric SQ
NTLJS3A18PZTXG	ON Semiconductor	MOSFET P-CH 20V 8.4A WDFN6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WDFN (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock4,336	MOSFET (Metal Oxide)	20V	5A (Ta)	1.5V, 4.5V	1V @ 250µA	28nC @ 4.5V	2240pF @ 15V	±8V	-	700mW (Ta)	18 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN (2x2)	6-WDFN Exposed Pad
2SK3827	ON Semiconductor	MOSFET N-CH 100V 40A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.75W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,904	MOSFET (Metal Oxide)	100V	40A (Ta)	4V, 10V	2.6V @ 1mA	79nC @ 10V	4200pF @ 20V	±20V	-	1.75W (Ta), 60W (Tc)	34 mOhm @ 20A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
HUF75321S3S	Fairchild/ON Semiconductor	MOSFET N-CH 55V 35A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,880	MOSFET (Metal Oxide)	55V	35A (Tc)	10V	4V @ 250µA	44nC @ 20V	680pF @ 25V	±20V	-	93W (Tc)	34 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF7493PBF	Infineon Technologies	MOSFET N-CH 80V 9.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock20,304	MOSFET (Metal Oxide)	80V	9.3A (Tc)	10V	4V @ 250µA	53nC @ 10V	1510pF @ 25V	±20V	-	2.5W (Tc)	15 mOhm @ 5.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IXKP13N60C5M	IXYS	MOSFET N-CH 600V 6.5A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220ABFP Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock2,304	MOSFET (Metal Oxide)	600V	6.5A (Tc)	10V	3.5V @ 440µA	30nC @ 10V	1100pF @ 100V	±20V	Super Junction	-	300 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220ABFP	TO-220-3 Full Pack, Isolated Tab
NVMFS5C460NLWFAFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock2,016	MOSFET (Metal Oxide)	40V	21A (Ta), 78A (Tc)	4.5V, 10V	2V @ 250µA	23nC @ 10V	1300pF @ 25V	±20V	-	3.6W (Ta), 50W (Tc)	4.5 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
MCH3375-TL-W	ON Semiconductor	MOSFET P-CH 30V 1.6A MCPH3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 82pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 295 mOhm @ 800mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70FL/MCPH3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock3,520	MOSFET (Metal Oxide)	30V	1.6A (Ta)	4V, 10V	2.6V @ 1mA	2.2nC @ 10V	82pF @ 10V	±20V	-	800mW (Ta)	295 mOhm @ 800mA, 10V	150°C (TJ)	Surface Mount	SC-70FL/MCPH3	3-SMD, Flat Leads
IXFH220N06T3	IXYS	60V/220A TRENCHT3 HIPERFET MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 440W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,872	MOSFET (Metal Oxide)	60V	220A (Tc)	10V	4V @ 250µA	136nC @ 10V	8500pF @ 25V	±20V	-	440W (Tc)	4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
IRFS4310TRLPBF	Infineon Technologies	MOSFET N-CH 100V 130A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7670pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock25,332	MOSFET (Metal Oxide)	100V	130A (Tc)	10V	4V @ 250µA	250nC @ 10V	7670pF @ 50V	±20V	-	300W (Tc)	7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR1205TRPBF	Infineon Technologies	MOSFET N-CH 55V 44A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,284,516	MOSFET (Metal Oxide)	55V	44A (Tc)	10V	4V @ 250µA	65nC @ 10V	1300pF @ 25V	±20V	-	107W (Tc)	27 mOhm @ 26A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
CSD16301Q2	Texas Instruments	MOSFET N-CH 25V 6-SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs(th) (Max) @ Id: 1.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 12.5V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 2.3W (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 4A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SON Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock773,844	MOSFET (Metal Oxide)	25V	5A (Tc)	3V, 8V	1.55V @ 250µA	2.8nC @ 4.5V	340pF @ 12.5V	+10V, -8V	-	2.3W (Ta)	24 mOhm @ 4A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	6-SON	6-SMD, Flat Leads
AOI600A70	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 700V 8.5A TO251A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPAK	Package: -	Request a Quote	MOSFET (Metal Oxide)	700 V	8.5A (Tc)	10V	3.5V @ 250µA	15.5 nC @ 10 V	870 pF @ 100 V	±20V	-	104W (Tc)	600mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPAK
RF1S50N06LE	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDPF5N50UTYDTU	Fairchild Semiconductor	TRANS MOSFET N-CH 500V 4A T/R FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJA3415A_R1_00001-ML	MOSLEADER	P -20V -4.5A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TSM9409CS	Taiwan Semiconductor Corporation	-60V, -3.5A, SINGLE P-CHANNEL PO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	3.5A (Ta)	4.5V, 10V	1V @ 250µA	6 nC @ 10 V	540 pF @ 30 V	±20V	-	3W (Ta)	155mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
HUFA76609D3ST_NL	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 49W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	10A (Tc)	4.5V, 10V	3V @ 250µA	16 nC @ 10 V	425 pF @ 25 V	±16V	-	49W (Tc)	160mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
R8002ANJFRGTL	Rohm Semiconductor	MOSFET N-CH 800V 2A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,250	MOSFET (Metal Oxide)	800 V	2A (Tc)	10V	5V @ 1mA	13 nC @ 10 V	250 pF @ 25 V	±30V	-	62W (Tc)	4.3Ohm @ 1A, 10V	150°C (TJ)	Surface Mount	LPTS	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPP60R125CFD7XKSA1	Infineon Technologies	MOSFET N-CH 600V 18A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Stock969	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	4.5V @ 390µA	36 nC @ 10 V	1503 pF @ 400 V	±20V	-	92W (Tc)	125mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
G080N10T	Goford Semiconductor	MOSFET N-CH 100V 180A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13912 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock210	MOSFET (Metal Oxide)	100 V	180A (Tc)	4.5V, 10V	2.5V @ 250µA	107 nC @ 4.5 V	13912 pF @ 50 V	±20V	-	370W (Tc)	7.5mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
MCAC85N06Y-TP	Micro Commercial Co	MOSFET N-CH 60V 85A DFN5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 105W Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	85A (Tc)	4.5V, 10V	2.5V @ 250µA	66.1 nC @ 10 V	3350 pF @ 30 V	±20V	-	105W	3mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
SSM3J36TU-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 330MA UFM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	Package: -	Stock33,828	MOSFET (Metal Oxide)	20 V	330mA (Ta)	1.5V, 4.5V	1V @ 1mA	1.2 nC @ 4 V	43 pF @ 10 V	±8V	-	800mW (Ta)	1.31Ohm @ 100mA, 4.5V	150°C	Surface Mount	UFM	3-SMD, Flat Leads
NTPF110N65S3HF	onsemi	MOSFET N-CH 650V 30A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 740µA Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2635 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: -	Stock1,479	MOSFET (Metal Oxide)	650 V	30A (Tc)	10V	5V @ 740µA	62 nC @ 10 V	2635 pF @ 400 V	±30V	-	240W (Tc)	110mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
AUIRFZ44V	International Rectifier	MOSFET N-CH 60V 55A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	55A (Tc)	-	4V @ 250µA	67 nC @ 10 V	1812 pF @ 25 V	-	-	115W (Tc)	16.5mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIHB30N60ET1-GE3	Vishay Siliconix	N-CHANNEL 600V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock3,648	MOSFET (Metal Oxide)	600 V	29A (Tc)	10V	4V @ 250µA	130 nC @ 10 V	2600 pF @ 100 V	±30V	-	250W (Tc)	125mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB