Page 74 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF6215LPBF
Infineon Technologies

MOSFET P-CH 150V 13A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,224
SPD03N60S5BTMA1
Infineon Technologies

MOSFET N-CH 600V 3.2A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,880
IPD800N06NGBTMA1
Infineon Technologies

MOSFET N-CH 60V 16A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,936
IPP60R750E6XKSA1
Infineon Technologies

MOSFET N-CH 600V 5.7A TO220

Package: TO-220-3

Stock2,480
APT75M50B2
Microsemi Corporation

MOSFET N-CH 500V 75A T-MAX

Package: TO-247-3 Variant

Stock3,664
DMJ7N70SK3-13
Diodes Incorporated

MOSFET N-CH 700V 3.9A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,696
CSD18534Q5AT
Texas Instruments

N-CHANNEL NEXFET POWER MOSFET

Package: 8-PowerTDFN

Stock2,544
ECH8410-TL-H
ON Semiconductor

MOSFET N-CH 30V 12A ECH8

Package: 8-SMD, Flat Lead

Stock36,000
CSD18514Q5A
Texas Instruments

40V N CH MOSFET

Package: 8-PowerTDFN

Stock5,408
NTD4805NT4G
ON Semiconductor

MOSFET N-CH 30V 12.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock18,240
FDD6030L
Fairchild/ON Semiconductor

MOSFET N-CH 30V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock186,660
IXTQ36P15P
IXYS

MOSFET P-CH 150V 36A TO-3P

Package: TO-3P-3, SC-65-3

Stock7,520
APT48M80L
Microsemi Corporation

MOSFET N-CH 800V 48A TO-264

Package: TO-264-3, TO-264AA

Stock7,044
IXFH16N50P
IXYS

MOSFET N-CH 500V 16A TO-247

Package: TO-247-3

Stock390,000
IRFR3710ZPBF
Infineon Technologies

MOSFET N-CH 100V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,616
FQN1N50CTA
Fairchild/ON Semiconductor

MOSFET N-CH 500V 380MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock864,000
AOD536
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 20.5A

Package: -

Request a Quote
2N7002B-TP
Micro Commercial Co

MOSFET

Package: -

Request a Quote
TSM680P06CI-C0G
Taiwan Semiconductor Corporation

MOSFET P-CH 60V 18A ITO220

Package: -

Request a Quote
IPP070N08N3GXKSA1
Infineon Technologies

N-CHANNEL POWER MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6215LPBF	Infineon Technologies	MOSFET P-CH 150V 13A TO-262 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,224	MOSFET (Metal Oxide)	150V	13A (Tc)	10V	4V @ 250µA	66nC @ 10V	860pF @ 25V	±20V	-	3.8W (Ta), 110W (Tc)	290 mOhm @ 6.6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
SPD03N60S5BTMA1	Infineon Technologies	MOSFET N-CH 600V 3.2A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,880	MOSFET (Metal Oxide)	600V	3.2A (Tc)	10V	5.5V @ 135µA	16nC @ 10V	420pF @ 25V	±20V	-	38W (Tc)	1.4 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD800N06NGBTMA1	Infineon Technologies	MOSFET N-CH 60V 16A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 16µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,936	MOSFET (Metal Oxide)	60V	16A (Tc)	10V	4V @ 16µA	10nC @ 10V	370pF @ 30V	±20V	-	47W (Tc)	80 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPP60R750E6XKSA1	Infineon Technologies	MOSFET N-CH 600V 5.7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 373pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock2,480	MOSFET (Metal Oxide)	600V	5.7A (Tc)	10V	3.5V @ 170µA	17.2nC @ 10V	373pF @ 100V	±20V	-	48W (Tc)	750 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
APT75M50B2	Microsemi Corporation	MOSFET N-CH 500V 75A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock3,664	MOSFET (Metal Oxide)	500V	75A (Tc)	10V	5V @ 2.5mA	290nC @ 10V	11600pF @ 25V	±30V	-	1040W (Tc)	75 mOhm @ 37A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX?	TO-247-3 Variant
DMJ7N70SK3-13	Diodes Incorporated	MOSFET N-CH 700V 3.9A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 351pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,696	MOSFET (Metal Oxide)	700V	3.9A (Tc)	10V	4V @ 250µA	13.9nC @ 10V	351pF @ 50V	±30V	-	28W (Tc)	1.25 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
CSD18534Q5AT	Texas Instruments	N-CHANNEL NEXFET POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 77W (Tc) Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,544	MOSFET (Metal Oxide)	60V	50A (Ta)	4.5V, 10V	2.3V @ 250µA	11.1nC @ 4.5V	1770pF @ 30V	±20V	-	3.1W (Ta), 77W (Tc)	9.8 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
ECH8410-TL-H	ON Semiconductor	MOSFET N-CH 30V 12A ECH8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-ECH Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock36,000	MOSFET (Metal Oxide)	30V	12A (Ta)	4V, 10V	-	31nC @ 10V	1700pF @ 10V	±20V	-	1.6W (Ta)	10 mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	8-ECH	8-SMD, Flat Lead
CSD18514Q5A	Texas Instruments	40V N CH MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,408	-	-	-	4.5V, 10V	-	-	-	±20V	-	-	-	-	Surface Mount	8-VSONP (5x6)	8-PowerTDFN
NTD4805NT4G	ON Semiconductor	MOSFET N-CH 30V 12.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.41W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock18,240	MOSFET (Metal Oxide)	30V	12.7A (Ta), 95A (Tc)	4.5V, 11.5V	2.5V @ 250µA	48nC @ 11.5V	2865pF @ 12V	±20V	-	1.41W (Ta), 79W (Tc)	5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6030L	Fairchild/ON Semiconductor	MOSFET N-CH 30V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock186,660	MOSFET (Metal Oxide)	30V	12A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	28nC @ 5V	1230pF @ 15V	±20V	-	3.2W (Ta), 56W (Tc)	14.5 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTQ36P15P	IXYS	MOSFET P-CH 150V 36A TO-3P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,520	MOSFET (Metal Oxide)	150V	36A (Tc)	10V	4.5V @ 250µA	55nC @ 10V	3100pF @ 25V	±20V	-	300W (Tc)	110 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
APT48M80L	Microsemi Corporation	MOSFET N-CH 800V 48A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9330pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,044	MOSFET (Metal Oxide)	800V	49A (Tc)	10V	5V @ 2.5mA	305nC @ 10V	9330pF @ 25V	±30V	-	1135W (Tc)	200 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
IXFH16N50P	IXYS	MOSFET N-CH 500V 16A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	500V	16A (Tc)	10V	5.5V @ 2.5mA	43nC @ 10V	2250pF @ 25V	±30V	-	300W (Tc)	400 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IRFR3710ZPBF	Infineon Technologies	MOSFET N-CH 100V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2930pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,616	MOSFET (Metal Oxide)	100V	42A (Tc)	10V	4V @ 250µA	100nC @ 10V	2930pF @ 25V	±20V	-	140W (Tc)	18 mOhm @ 33A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQN1N50CTA	Fairchild/ON Semiconductor	MOSFET N-CH 500V 380MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 380mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890mW (Ta), 2.08W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 190mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock864,000	MOSFET (Metal Oxide)	500V	380mA (Tc)	10V	4V @ 250µA	6.4nC @ 10V	195pF @ 25V	±30V	-	890mW (Ta), 2.08W (Tc)	6 Ohm @ 190mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
AOD536	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 20.5A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	20.5A (Ta), 46A (Tc)	-	2.2V @ 250µA	22 nC @ 10 V	1140 pF @ 15 V	-	-	-	8.5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
2N7002B-TP	Micro Commercial Co	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 340mA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300mW Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	340mA	4.5V, 10V	2.5V @ 250µA	-	50 pF @ 25 V	±30V	-	300mW	3Ohm @ 500mA, 10V	-55°C ~ 150°C	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
TSM680P06CI-C0G	Taiwan Semiconductor Corporation	MOSFET P-CH 60V 18A ITO220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 17W (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	18A (Tc)	4.5V, 10V	2.2V @ 250µA	16.4 nC @ 10 V	870 pF @ 30 V	±20V	-	17W (Tc)	68mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220	TO-220-3 Full Pack, Isolated Tab
IPP070N08N3GXKSA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 73µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	80A (Tc)	6V, 10V	3.5V @ 73µA	56 nC @ 10 V	3840 pF @ 40 V	±20V	-	136W (Tc)	7mOhm @ 73A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
STD13N60M6	STMicroelectronics	MOSFET N-CH 600V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	10A (Tc)	10V	4.75V @ 250µA	13 nC @ 10 V	509 pF @ 100 V	±25V	-	92W (Tc)	380mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
AON6108FD	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 8DFN 5X6 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMT3020LFDFQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V U-DFN2020- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Stock9,000	MOSFET (Metal Oxide)	30 V	8.4A (Ta)	4.5V, 10V	2.5V @ 250µA	7 nC @ 10 V	393 pF @ 15 V	±20V	-	700mW (Ta)	17mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
DMTH10H009LPS-13	Diodes Incorporated	MOSFET N-CH 100V PWRDI5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	14A (Ta), 100A (Tc)	4.5V, 10V	2.5V @ 250µA	40.2 nC @ 10 V	2309 pF @ 50 V	±20V	-	1.5W (Ta), 125W (Tc)	8mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
FDB6676	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 84A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5324 pF @ 15 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 42A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	84A (Ta)	4.5V, 10V	3V @ 250µA	60 nC @ 5 V	5324 pF @ 15 V	±16V	-	93W (Tc)	6mOhm @ 42A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPZA60R099P7XKSA1	Infineon Technologies	MOSFET N-CH 600V 31A TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 530µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 117W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	31A (Tc)	10V	4V @ 530µA	45 nC @ 10 V	1952 pF @ 400 V	±20V	-	117W (Tc)	99mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
IAUMN08S5N012GATMA1	Infineon Technologies	MOSFET_(75V 120V( FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AONV110A60	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 357W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-DFN (8x8) Package / Case: 4-PowerTSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	5.3A (Ta), 35A (Tc)	10V	3.6V @ 250µA	72 nC @ 10 V	4140 pF @ 100 V	±20V	-	8.3W (Ta), 357W (Tc)	110mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	4-DFN (8x8)	4-PowerTSFN