Page 75 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPU60R950C6BKMA1
Infineon Technologies

MOSFET N-CH 600V 4.4A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,760
IPB77N06S3-09
Infineon Technologies

MOSFET N-CH 55V 77A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock115,464
IPB11N03LA G
Infineon Technologies

MOSFET N-CH 25V 30A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,632
FDA15N65
Fairchild/ON Semiconductor

MOSFET N-CH 650V 16A TO-3PN

Package: TO-3P-3, SC-65-3

Stock103,464
PHP110NQ08T,127
NXP

MOSFET N-CH 75V 75A TO220AB

Package: TO-220-3

Stock7,248
IRFR214TR
Vishay Siliconix

MOSFET N-CH 250V 2.2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock123,684
IXFH23N80Q
IXYS

MOSFET N-CH 800V 23A TO-247

Package: TO-247-3

Stock6,688
AON6560
Alpha & Omega Semiconductor Inc.

MOSFET N-CH

Package: 8-PowerSMD, Flat Leads

Stock7,968
NTTFS4930NTWG
ON Semiconductor

MOSFET N-CH 30V 23A 8WDFN

Package: 8-PowerWDFN

Stock72,012
TSM480P06CH X0G
TSC America Inc.

MOSFET, SINGLE, P-CHANNEL, -60V,

Package: TO-251-3 Stub Leads, IPak

Stock6,720
IRFR8314TRPBF
Infineon Technologies

MOSFET N-CH 30V 179A D2PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,448
FQD19N10TM
Fairchild/ON Semiconductor

MOSFET N-CH 100V 15.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock385,956
FDZ197PZ
Fairchild/ON Semiconductor

MOSFET P-CH 20V 3.8A 6-WLCSP

Package: 6-UFBGA, WLCSP

Stock59,280
SI1499DH-T1-E3
Vishay Siliconix

MOSFET P-CH 8V 1.6A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock4,352
DMP2066LDM-7
Diodes Incorporated

MOSFET P-CH 20V 4.6A SOT-26

Package: SOT-23-6

Stock1,158,672
BSS123-7-F
Diodes Incorporated

MOSFET N-CH 100V 170MA SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock37,202,880
DMP2035U-7
Diodes Incorporated

MOSFET P-CH 20V 3.6A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock1,714,020
TP65H050G4BS
Transphorm

650 V 34 A GAN FET

Package: -

Stock687
BSB881N03LX3GXUMA1
Infineon Technologies

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
GT105N10T
Goford Semiconductor

N100V,RD(MAX)<10.5M@10V,RD(MAX)<

Package: -

Stock507

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPU60R950C6BKMA1	Infineon Technologies	MOSFET N-CH 600V 4.4A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,760	MOSFET (Metal Oxide)	600V	4.4A (Tc)	10V	3.5V @ 130µA	1.5nC @ 10V	280pF @ 100V	±20V	-	37W (Tc)	950 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IPB77N06S3-09	Infineon Technologies	MOSFET N-CH 55V 77A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 55µA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5335pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 39A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock115,464	MOSFET (Metal Oxide)	55V	77A (Tc)	10V	4V @ 55µA	103nC @ 10V	5335pF @ 25V	±20V	-	107W (Tc)	8.8 mOhm @ 39A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB11N03LA G	Infineon Technologies	MOSFET N-CH 25V 30A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,632	MOSFET (Metal Oxide)	25V	30A (Tc)	4.5V, 10V	2V @ 20µA	11nC @ 5V	1358pF @ 15V	±20V	-	52W (Tc)	11.2 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDA15N65	Fairchild/ON Semiconductor	MOSFET N-CH 650V 16A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3095pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 260W (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock103,464	MOSFET (Metal Oxide)	650V	16A (Tc)	10V	5V @ 250µA	63nC @ 10V	3095pF @ 25V	±30V	-	260W (Tc)	440 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
PHP110NQ08T,127	NXP	MOSFET N-CH 75V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 113.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,248	MOSFET (Metal Oxide)	75V	75A (Tc)	10V	4V @ 1mA	113.1nC @ 10V	4860pF @ 25V	±20V	-	230W (Tc)	9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFR214TR	Vishay Siliconix	MOSFET N-CH 250V 2.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock123,684	MOSFET (Metal Oxide)	250V	2.2A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	2 Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFH23N80Q	IXYS	MOSFET N-CH 800V 23A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,688	MOSFET (Metal Oxide)	800V	23A (Tc)	10V	4.5V @ 3mA	130nC @ 10V	4900pF @ 25V	±30V	-	500W (Tc)	420 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
AON6560	Alpha & Omega Semiconductor Inc.	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 84A (Ta), 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.3W (Ta), 208W (Tc) Rds On (Max) @ Id, Vgs: 680 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock7,968	MOSFET (Metal Oxide)	30V	84A (Ta), 200A (Tc)	4.5V, 10V	2.2V @ 250µA	325nC @ 10V	11500pF @ 15V	±20V	-	7.3W (Ta), 208W (Tc)	680 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
NTTFS4930NTWG	ON Semiconductor	MOSFET N-CH 30V 23A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 476pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 790mW (Ta), 20.2W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock72,012	MOSFET (Metal Oxide)	30V	4.5A (Ta), 23A (Tc)	4.5V, 10V	2.2V @ 250µA	5.5nC @ 4.5V	476pF @ 15V	±20V	-	790mW (Ta), 20.2W (Tc)	23 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
TSM480P06CH X0G	TSC America Inc.	MOSFET, SINGLE, P-CHANNEL, -60V, FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 48 mOhm @ 8A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock6,720	MOSFET (Metal Oxide)	60V	20A (Tc)	4.5V, 10V	2.2V @ 250µA	22.4nC @ 10V	1250pF @ 30V	±20V	-	66W (Tc)	48 mOhm @ 8A, 10V	-50°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Stub Leads, IPak
IRFR8314TRPBF	Infineon Technologies	MOSFET N-CH 30V 179A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4945pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,448	MOSFET (Metal Oxide)	30V	90A (Tc)	4.5V, 10V	2.2V @ 100µA	54nC @ 4.5V	4945pF @ 15V	±20V	-	125W (Tc)	2.2 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD19N10TM	Fairchild/ON Semiconductor	MOSFET N-CH 100V 15.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock385,956	MOSFET (Metal Oxide)	100V	15.6A (Tc)	10V	4V @ 250µA	25nC @ 10V	780pF @ 25V	±25V	-	2.5W (Ta), 50W (Tc)	100 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDZ197PZ	Fairchild/ON Semiconductor	MOSFET P-CH 20V 3.8A 6-WLCSP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 64 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WLCSP Package / Case: 6-UFBGA, WLCSP	Package: 6-UFBGA, WLCSP	Stock59,280	MOSFET (Metal Oxide)	20V	3.8A (Ta)	1.5V, 4.5V	1V @ 250µA	25nC @ 4.5V	1570pF @ 10V	±8V	-	1.9W (Ta)	64 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WLCSP	6-UFBGA, WLCSP
SI1499DH-T1-E3	Vishay Siliconix	MOSFET P-CH 8V 1.6A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 4V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock4,352	MOSFET (Metal Oxide)	8V	1.6A (Tc)	1.2V, 4.5V	800mV @ 250µA	16nC @ 4.5V	650pF @ 4V	±5V	-	2.5W (Ta), 2.78W (Tc)	78 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6 (SOT-363)	6-TSSOP, SC-88, SOT-363
DMP2066LDM-7	Diodes Incorporated	MOSFET P-CH 20V 4.6A SOT-26 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	Package: SOT-23-6	Stock1,158,672	MOSFET (Metal Oxide)	20V	4.6A (Ta)	2.5V, 4.5V	1.2V @ 250µA	10.1nC @ 4.5V	820pF @ 15V	±12V	-	1.25W (Ta)	40 mOhm @ 4.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-26	SOT-23-6
BSS123-7-F	Diodes Incorporated	MOSFET N-CH 100V 170MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock37,202,880	MOSFET (Metal Oxide)	100V	170mA (Ta)	10V	2V @ 1mA	-	60pF @ 25V	±20V	-	300mW (Ta)	6 Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMP2035U-7	Diodes Incorporated	MOSFET P-CH 20V 3.6A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 810mW (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,714,020	MOSFET (Metal Oxide)	20V	3.6A (Ta)	1.8V, 4.5V	1V @ 250µA	15.4nC @ 4.5V	1610pF @ 10V	±8V	-	810mW (Ta)	35 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
TP65H050G4BS	Transphorm	650 V 34 A GAN FET FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock687	GaNFET (Gallium Nitride)	650 V	34A (Tc)	10V	4.8V @ 700µA	24 nC @ 10 V	1000 pF @ 400 V	±20V	-	119W (Tc)	60mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSB881N03LX3GXUMA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GT105N10T	Goford Semiconductor	N100V,RD(MAX)<10.5M@10V,RD(MAX)< FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock507	MOSFET (Metal Oxide)	100 V	55A (Tc)	4.5V, 10V	2.5V @ 250µA	54 nC @ 10 V	-	±20V	-	74W (Tc)	10.5mOhm @ 35A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
NVH4L060N090SC1	onsemi	- FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 4.3V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V Vgs (Max): +22V, -8V FET Feature: - Power Dissipation (Max): 221W (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock2,697	SiCFET (Silicon Carbide)	900 V	46A (Tc)	15V, 18V	4.3V @ 5mA	87 nC @ 15 V	1770 pF @ 450 V	+22V, -8V	-	221W (Tc)	84mOhm @ 20A, 15V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
MMFTN3018W	Diotec Semiconductor	MOSFET SOT323 N 30V 8OHM 150C FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 5 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock8,940	MOSFET (Metal Oxide)	30 V	100mA (Ta)	2.5V, 4V	1.5V @ 100µA	-	13000 pF @ 5 V	±20V	-	200mW (Ta)	8Ohm @ 10mA, 4V	150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
NTMFS005P03P8ZST1G	onsemi	PT8P PORTFOLIO EXPANSION FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	15.3A (Ta)	4.5V, 10V	3V @ 250µA	183 nC @ 10 V	7880 pF @ 15 V	±25V	-	900mW (Ta)	2.7mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SUD50N02-06P-GE3	Vishay Siliconix	MOSFET N-CH 20V 50A TO252AA FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPC60R190E6X7SA1	Infineon Technologies	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVMFS5C628NT1G	onsemi	MOSFET N-CH 60V 28A/150A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	28A (Ta), 150A (Tc)	10V	4V @ 135µA	34 nC @ 10 V	2630 pF @ 30 V	±20V	-	3.7W (Ta), 110W (Tc)	3mOhm @ 27A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
AM2302N-T1-PF-ML	MOSLEADER	Single N 20V 3.4A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK3755-AZ	Renesas Electronics Corporation	TRANSISTOR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	45A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-