Page 77 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF9Z34NLPBF
Infineon Technologies

MOSFET P-CH 55V 19A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock15,948
AON6428_103
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 11A

Package: 8-PowerSMD, Flat Leads

Stock5,520
2SK4124-1E
ON Semiconductor

MOSFET N-CH 500V 20A

Package: TO-3P-3, SC-65-3

Stock3,840
FDS6299S
Fairchild/ON Semiconductor

MOSFET N-CH 30V 21A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock838,632
NTD14N03R
ON Semiconductor

MOSFET N-CH 25V 2.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock154,092
IRFL9014TR
Vishay Siliconix

MOSFET P-CH 60V 1.8A SOT223

Package: TO-261-4, TO-261AA

Stock5,776
PMV45EN,215
NXP

MOSFET N-CH 30V 5.4A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock6,976
APT47N65BC3G
Microsemi Corporation

MOSFET N-CH 650V 47A TO-247

Package: TO-247-3

Stock6,544
IXFA26N50P3
IXYS

MOSFET N-CH 500V 26A TO-263AA

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,448
IXTA1N100
IXYS

MOSFET N-CH 1000V 1.5A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock516,000
SI4884BDY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 16.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,520
DMP3099L-13
Diodes Incorporated

MOSFET P-CH 30V 3.8A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock6,784
STF4N80K5
STMicroelectronics

MOSFET N-CH 800V 3A TO-220FP

Package: TO-220-3 Full Pack

Stock22,824
SQ2301ES-T1_GE3
Vishay Siliconix

MOSFET P-CH 20V 3.9A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock6,976
IXFB132N50P3
IXYS

MOSFET N-CH 500V 132A PLUS264

Package: TO-264-3, TO-264AA

Stock7,136
FDA59N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 59A TO-3P

Package: TO-3P-3, SC-65-3

Stock502,500
STP5NK80Z
STMicroelectronics

MOSFET N-CH 800V 4.3A TO-220

Package: TO-220-3

Stock268,452
SIHG065N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 40A TO247AC

Package: -

Stock1,902
IPC313N10N3RX1SA2
Infineon Technologies

TRENCH >=100V

Package: -

Request a Quote
PMV164ENEAR
Nexperia USA Inc.

MOSFET N-CH 60V 1.6A TO236AB

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF9Z34NLPBF	Infineon Technologies	MOSFET P-CH 55V 19A TO-262 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock15,948	MOSFET (Metal Oxide)	55V	19A (Tc)	10V	4V @ 250µA	35nC @ 10V	620pF @ 25V	±20V	-	3.8W (Ta), 68W (Tc)	100 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
AON6428_103	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 11A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock5,520	MOSFET (Metal Oxide)	30V	11A (Ta), 43A (Tc)	4.5V, 10V	2.2V @ 250µA	17.8nC @ 10V	770pF @ 15V	±20V	-	2W (Ta), 30W (Tc)	10 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
2SK4124-1E	ON Semiconductor	MOSFET N-CH 500V 20A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 46.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P-3L Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock3,840	MOSFET (Metal Oxide)	500V	20A (Ta)	10V	-	46.6nC @ 10V	1200pF @ 30V	±30V	-	2.5W (Ta), 170W (Tc)	430 mOhm @ 8A, 10V	150°C (TJ)	Through Hole	TO-3P-3L	TO-3P-3, SC-65-3
FDS6299S	Fairchild/ON Semiconductor	MOSFET N-CH 30V 21A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3880pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock838,632	MOSFET (Metal Oxide)	30V	21A (Ta)	4.5V, 10V	3V @ 1mA	81nC @ 10V	3880pF @ 15V	±20V	-	3W (Ta)	3.9 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTD14N03R	ON Semiconductor	MOSFET N-CH 25V 2.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock154,092	MOSFET (Metal Oxide)	25V	2.5A (Ta)	4.5V, 10V	2V @ 250µA	1.8nC @ 5V	115pF @ 20V	±20V	-	1.04W (Ta), 20.8W (Tc)	95 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFL9014TR	Vishay Siliconix	MOSFET P-CH 60V 1.8A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,776	MOSFET (Metal Oxide)	60V	1.8A (Tc)	10V	4V @ 250µA	12nC @ 10V	270pF @ 25V	±20V	-	2W (Ta), 3.1W (Tc)	500 mOhm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
PMV45EN,215	NXP	MOSFET N-CH 30V 5.4A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 280mW (Tj) Rds On (Max) @ Id, Vgs: 42 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,976	MOSFET (Metal Oxide)	30V	5.4A (Tc)	4.5V, 10V	2V @ 1mA	9.4nC @ 10V	350pF @ 30V	±20V	-	280mW (Tj)	42 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
APT47N65BC3G	Microsemi Corporation	MOSFET N-CH 650V 47A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7015pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock6,544	MOSFET (Metal Oxide)	650V	47A (Tc)	10V	3.9V @ 2.7mA	260nC @ 10V	7015pF @ 25V	±20V	-	417W (Tc)	70 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
IXFA26N50P3	IXYS	MOSFET N-CH 500V 26A TO-263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,448	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	5V @ 4mA	42nC @ 10V	2220pF @ 25V	±30V	-	500W (Tc)	230 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXFA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA1N100	IXYS	MOSFET N-CH 1000V 1.5A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 11 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock516,000	MOSFET (Metal Oxide)	1000V	1.5A (Tc)	10V	4.5V @ 25µA	14.5nC @ 10V	400pF @ 25V	±30V	-	54W (Tc)	11 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4884BDY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 16.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,520	MOSFET (Metal Oxide)	30V	16.5A (Tc)	4.5V, 10V	3V @ 250µA	35nC @ 10V	1525pF @ 15V	±20V	-	2.5W (Ta), 4.45W (Tc)	9 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMP3099L-13	Diodes Incorporated	MOSFET P-CH 30V 3.8A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.08W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,784	MOSFET (Metal Oxide)	30V	3.8A (Ta)	4.5V, 10V	2.1V @ 250µA	5.2nC @ 4.5V	563pF @ 25V	±20V	-	1.08W (Ta)	65 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
STF4N80K5	STMicroelectronics	MOSFET N-CH 800V 3A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock22,824	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	5V @ 100µA	10.5nC @ 10V	175pF @ 100V	±30V	-	20W (Tc)	2.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
SQ2301ES-T1_GE3	Vishay Siliconix	MOSFET P-CH 20V 3.9A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.8A, 4.5V Operating Temperature: -55°C ~ 175°C (TA) Mounting Type: Surface Mount Supplier Device Package: TO-236 (SOT-23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,976	MOSFET (Metal Oxide)	20V	3.9A (Tc)	2.5V, 4.5V	1.5V @ 250µA	8nC @ 4.5V	425pF @ 10V	±8V	-	3W (Tc)	120 mOhm @ 2.8A, 4.5V	-55°C ~ 175°C (TA)	Surface Mount	TO-236 (SOT-23)	TO-236-3, SC-59, SOT-23-3
IXFB132N50P3	IXYS	MOSFET N-CH 500V 132A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 132A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1890W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 66A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,136	MOSFET (Metal Oxide)	500V	132A (Tc)	10V	5V @ 8mA	250nC @ 10V	18600pF @ 25V	±30V	-	1890W (Tc)	39 mOhm @ 66A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS264?	TO-264-3, TO-264AA
FDA59N25	Fairchild/ON Semiconductor	MOSFET N-CH 250V 59A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 392W (Tc) Rds On (Max) @ Id, Vgs: 49 mOhm @ 29.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock502,500	MOSFET (Metal Oxide)	250V	59A (Tc)	10V	5V @ 250µA	82nC @ 10V	4020pF @ 25V	±30V	-	392W (Tc)	49 mOhm @ 29.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
STP5NK80Z	STMicroelectronics	MOSFET N-CH 800V 4.3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 45.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock268,452	MOSFET (Metal Oxide)	800V	4.3A (Tc)	10V	4.5V @ 100µA	45.5nC @ 10V	910pF @ 25V	±30V	-	110W (Tc)	2.4 Ohm @ 2.15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIHG065N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 40A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Stock1,902	MOSFET (Metal Oxide)	600 V	40A (Tc)	10V	5V @ 250µA	74 nC @ 10 V	2700 pF @ 100 V	±30V	-	250W (Tc)	65mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
IPC313N10N3RX1SA2	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PMV164ENEAR	Nexperia USA Inc.	MOSFET N-CH 60V 1.6A TO236AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 640mW (Ta), 5.8W (Tc) Rds On (Max) @ Id, Vgs: 218mOhm @ 1.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	1.6A (Ta)	4.5V, 10V	2.7V @ 250µA	3.8 nC @ 10 V	110 pF @ 30 V	±20V	-	640mW (Ta), 5.8W (Tc)	218mOhm @ 1.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
PA502FMG-ML	MOSLEADER	Single P -20V -3A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVMFS6H858NT1G	onsemi	MOSFET N-CH 80V 8.4A/29A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	8.4A (Ta), 29A (Tc)	10V	4V @ 30µA	8.9 nC @ 10 V	510 pF @ 40 V	±20V	-	3.5W (Ta), 42W (Tc)	20.7mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
2SJ325-Z-AY	Renesas Electronics Corporation	P-CHANNEL SMALL SIGNAL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMTH43M8LFGQ-13-01	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	24A (Ta), 100A (Tc)	5V, 10V	2.5V @ 250µA	40.1 nC @ 10 V	2798 pF @ 20 V	±20V	-	2.62W (Ta), 65.2W (Tc)	3mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
RX3P10BBHC16	Rohm Semiconductor	NCH 100V 100A, TO-220AB, POWER M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 189W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 90A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock3,000	MOSFET (Metal Oxide)	100 V	100A (Tc)	6V, 10V	4V @ 1mA	135 nC @ 10 V	8600 pF @ 50 V	±20V	-	189W (Tc)	3.3mOhm @ 90A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTMS4N01R2	onsemi	MOSFET PWR N-CHAN 4.2A 20V 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 770mW (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	-	-	-	-	-	-	±10V	-	770mW (Ta)	40mOhm @ 4.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SIHA17N80E-GE3	Vishay Siliconix	N-CHANNEL 800V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Stock5,940	MOSFET (Metal Oxide)	800 V	6A (Tc)	10V	4V @ 250µA	122 nC @ 10 V	2408 pF @ 100 V	±30V	-	35W (Tc)	290mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
AS1M025120T	ANBON SEMICONDUCTOR (INT'L) LIMITED	N-CHANNEL SILICON CARBIDE POWER FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock45	SiCFET (Silicon Carbide)	1200 V	65A (Tc)	20V	4V @ 15mA	195 nC @ 20 V	4200 pF @ 1000 V	+25V, -10V	-	370W (Tc)	34mOhm @ 50A, 20V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4	TO-247-4