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Infineon Technologies |
MOSFET N-CH 20V 1.4A SOT363
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
- Vgs(th) (Max) @ Id: 950mV @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 2.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT363-6
- Package / Case: 6-VSSOP, SC-88, SOT-363
|
Package: 6-VSSOP, SC-88, SOT-363 |
Stock7,744 |
|
MOSFET (Metal Oxide) | 20V | 1.4A (Ta) | 1.8V, 2.5V | 950mV @ 3.7µA | 0.6nC @ 2.5V | 180pF @ 10V | ±8V | - | 500mW (Ta) | 160 mOhm @ 1.4A, 2.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT363-6 | 6-VSSOP, SC-88, SOT-363 |
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|
Infineon Technologies |
MOSFET N-CH 40V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 213nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7930pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock36,000 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 2V @ 250µA | 213nC @ 10V | 7930pF @ 25V | ±20V | - | 300W (Tc) | 3.1 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 5.5A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,816 |
|
MOSFET (Metal Oxide) | 600V | 5.5A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 810pF @ 25V | ±30V | - | 125W (Tc) | 2 Ohm @ 2.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 12.8A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 65W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 6.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,680 |
|
MOSFET (Metal Oxide) | 100V | 12.8A (Tc) | 5V, 10V | 2V @ 250µA | 12nC @ 5V | 520pF @ 25V | ±20V | - | 3.75W (Ta), 65W (Tc) | 180 mOhm @ 6.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 250V 2.8A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock5,616 |
|
MOSFET (Metal Oxide) | 250V | 2.8A (Tc) | 10V | 5V @ 250µA | 5.2nC @ 10V | 170pF @ 25V | ±30V | - | 3.13W (Ta), 45W (Tc) | 2.2 Ohm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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|
Diodes Incorporated |
MOSFET N-CH 60V 11.2A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1426pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.15W (Ta)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 7.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock411,744 |
|
MOSFET (Metal Oxide) | 60V | 7.7A (Ta) | 4.5V, 10V | 3V @ 250µA | 29nC @ 10V | 1426pF @ 30V | ±20V | - | 2.15W (Ta) | 40 mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Infineon Technologies |
MOSFET N-CH 600V 19A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 390µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 400V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 92W (Tc)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 7.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock6,752 |
|
MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 4V @ 390µA | 34nC @ 10V | 1500pF @ 400V | ±20V | - | 92W (Tc) | 120 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
|
|
IXYS |
MOSFET N-CH 150V 180A PLUS 247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 830W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock7,408 |
|
MOSFET (Metal Oxide) | 150V | 180A (Tc) | 10V | 5V @ 4mA | 240nC @ 10V | 7000pF @ 25V | ±20V | - | 830W (Tc) | 11 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 40V 340A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 256nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
|
Package: TO-263-7, D2Pak (6 Leads + Tab) |
Stock2,096 |
|
MOSFET (Metal Oxide) | 40V | 340A (Tc) | 10V | 4V @ 250µA | 256nC @ 10V | 13000pF @ 25V | ±15V | - | 480W (Tc) | 1.7 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D2Pak (6 Leads + Tab) |
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|
ON Semiconductor |
MOSFET N-CH 30V 1.8A SOT563
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 900mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-563/SCH6
- Package / Case: SOT-563, SOT-666
|
Package: SOT-563, SOT-666 |
Stock6,800 |
|
MOSFET (Metal Oxide) | 30V | 1.8A (Ta) | 4V, 10V | 2.6V @ 1mA | 2nC @ 10V | 88pF @ 10V | ±20V | - | 800mW (Ta) | 180 mOhm @ 900mA, 10V | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
|
|
Texas Instruments |
MOSFET N-CH 60V 23A 8VSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5070pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON (5x6)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock150,012 |
|
MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 58nC @ 10V | 5070pF @ 30V | ±20V | - | 3.2W (Ta), 156W (Tc) | 3.2 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
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|
Nexperia USA Inc. |
MOSFET N-CH 100V 120A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11810pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 349W (Tc)
- Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock9,204 |
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MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4V @ 1mA | 180nC @ 10V | 11810pF @ 25V | ±20V | - | 349W (Tc) | 5.2 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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IXYS |
MOSFET N-CH 1KV 6A TO268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268 (IXFT)
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
|
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock6,976 |
|
MOSFET (Metal Oxide) | 1000V | 6A (Tc) | 10V | 5.5V @ 2.5mA | 54nC @ 10V | 1770pF @ 25V | ±20V | - | 180W (Tc) | 1.9 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 (IXFT) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 48W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock857,220 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 54nC @ 10V | 2071pF @ 15V | ±20V | - | 5W (Ta), 48W (Tc) | 4.7 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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|
Infineon Technologies |
MOSFET P-CH 55V 20A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252AA)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,696 |
|
MOSFET (Metal Oxide) | 55V | 20A (Tc) | 4.5V, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | ±20V | - | 79W (Tc) | 105 mOhm @ 3.4A, 10V | -40°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Microchip Technology |
MOSFET N-CH 400V 500MA 3TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 15W (Tc)
- Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock13,284 |
|
MOSFET (Metal Oxide) | 400V | 500mA (Tj) | 0V | - | - | 300pF @ 25V | ±20V | Depletion Mode | 15W (Tc) | 25 Ohm @ 120mA, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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|
Diodes Incorporated |
MOSFET N-CH 30V 2.2A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 650mW (Ta)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock420,000 |
|
MOSFET (Metal Oxide) | 30V | 2.2A (Ta) | 1.5V, 4.5V | 1V @ 250µA | - | 290pF @ 10V | ±8V | - | 650mW (Ta) | 90 mOhm @ 2.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
STMicroelectronics |
MOSFET N-CH 800V 10.5A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock36,012 |
|
MOSFET (Metal Oxide) | 800V | 10.5A (Tc) | 10V | 4.5V @ 100µA | 87nC @ 10V | 2620pF @ 25V | ±30V | - | 190W (Tc) | 750 mOhm @ 5.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
onsemi |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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onsemi |
MOSFET N-CH 20V 9A 8ECH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4 V
- Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 10 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 4A, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-ECH
- Package / Case: 8-SMD, Flat Lead
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Package: - |
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MOSFET (Metal Oxide) | 20 V | 9A (Ta) | - | - | 21 nC @ 4 V | 1740 pF @ 10 V | - | - | 1.4W (Ta) | 16mOhm @ 4A, 4V | 150°C (TJ) | Surface Mount | 8-ECH | 8-SMD, Flat Lead |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 40V 16A/124A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 124A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4928 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Stock12,498 |
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MOSFET (Metal Oxide) | 40 V | 16A (Ta), 124A (Tc) | - | 4V @ 250µA | 74 nC @ 10 V | 4928 pF @ 20 V | ±20V | - | 2W (Ta), 125W (Tc) | 4.3mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 650V 34A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Isolated Tab
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: - |
Stock825 |
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MOSFET (Metal Oxide) | 650 V | 34A (Tc) | 10V | 5V @ 1.5mA | 56 nC @ 10 V | 3230 pF @ 25 V | ±30V | - | 40W (Tc) | 100mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
TRENCH >=100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
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MOSFET (Metal Oxide) | 250 V | 46A (Tc) | 10V | 5V @ 250µA | 110 nC @ 10 V | 4560 pF @ 25 V | ±30V | - | 330W (Tc) | 46mOhm @ 26A, 10V | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 4.2A SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: 3-SMD, SOT-23-3 Variant
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 4.2A (Ta) | 2.5V, 10V | 1.3V @ 250µA | 9.4 nC @ 4.5 V | 954 pF @ 15 V | ±12V | - | 1.4W (Ta) | 50mOhm @ 4.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | 3-SMD, SOT-23-3 Variant |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 26A/53A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.2W (Ta), 26W (Tc)
- Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN-EP (5x6)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | 30 V | 26A (Ta), 53A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 30 nC @ 10 V | 1000 pF @ 15 V | ±20V | - | 6.2W (Ta), 26W (Tc) | 6.1mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET 800V TDSON-8
- FET Type: -
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 800 V | - | - | - | - | - | ±20V | - | - | - | - | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Goford Semiconductor |
N100V,65A,RD<8M@10V,VTH1.0V~2.5V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2328 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
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MOSFET (Metal Oxide) | 100 V | 65A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 35 nC @ 10 V | 2328 pF @ 50 V | ±20V | - | 100W (Tc) | 8mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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GaNPower |
GANFET N-CH 650V 30A DFN8X8
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Vgs(th) (Max) @ Id: 1.2V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 400 V
- Vgs (Max): +7.5V, -12V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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Package: - |
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GaNFET (Gallium Nitride) | 650 V | 30A | 6V | 1.2V @ 3.5mA | 5.8 nC @ 6 V | 241 pF @ 400 V | +7.5V, -12V | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |