Page 759 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7809PBF
Infineon Technologies

MOSFET N-CH 28V 14.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,392
2N6660-2
Vishay Siliconix

MOSFET N-CH 60V 0.99A TO-205

Package: TO-205AD, TO-39-3 Metal Can

Stock2,656
APT1204R7KFLLG
Microsemi Corporation

MOSFET N-CH 1200V 3.5A TO-220

Package: TO-220-3

Stock2,032
NTB52N10G
ON Semiconductor

MOSFET N-CH 100V 52A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock395,556
SPA11N80C3XKSA2
Infineon Technologies

MOSFET N-CH 800V 11A TO220

Package: TO-220-3 Isolated Tab

Stock4,848
IXFQ24N50Q
IXYS

MOSFET N-CH 500V 24A TO-3P

Package: TO-3P-3, SC-65-3

Stock3,264
NVMFS5C410NLAFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock3,520
NVMFS5C670NLWFAFT1G
ON Semiconductor

TRENCH 6 60V FET

Package: -

Stock7,104
STB100N6F7
STMicroelectronics

MOSFET N-CH 60V 100A F7 D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,864
TK16A60W,S4VX
Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A TO-220SIS

Package: TO-220-3 Full Pack

Stock8,520
TPH2R306NH,L1Q
Toshiba Semiconductor and Storage

MOSFET N CH 60V 60A SOP ADV

Package: 8-PowerVDFN

Stock46,728
SI5404BDC-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 5.4A 1206-8

Package: 8-SMD, Flat Lead

Stock176,508
IRL1404ZSTRLPBF
Infineon Technologies

MOSFET N-CH 40V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock16,176
SI4464DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 200V 1.7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock26,502
SI2300DS-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock1,723,188
IPW65R190CFDFKSA1
Infineon Technologies

MOSFET N-CH 650V 17.5A TO247-3

Package: -

Request a Quote
DMP4009SSSQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V SO-8 T&R 2

Package: -

Request a Quote
TSM8N70CI-C0
Taiwan Semiconductor Corporation

MOSFET N-CH 700V 8A ITO220AB

Package: -

Request a Quote
FDMC8327L-L701
onsemi

FET 40V 9.7 MOHM MLP33

Package: -

Stock9,000
AUXHKGP4062D-E
Infineon Technologies

IC DISCRETE

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7809PBF	Infineon Technologies	MOSFET N-CH 28V 14.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,392	MOSFET (Metal Oxide)	28V	14.5A (Ta)	4.5V	1V @ 250µA	-	-	±12V	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
2N6660-2	Vishay Siliconix	MOSFET N-CH 60V 0.99A TO-205 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock2,656	MOSFET (Metal Oxide)	60V	990mA (Tc)	5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	725mW (Ta), 6.25W (Tc)	3 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-205AF (TO-39)	TO-205AD, TO-39-3 Metal Can
APT1204R7KFLLG	Microsemi Corporation	MOSFET N-CH 1200V 3.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 1.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 [K] Package / Case: TO-220-3	Package: TO-220-3	Stock2,032	MOSFET (Metal Oxide)	1200V	3.5A (Tc)	10V	5V @ 1mA	31nC @ 10V	715pF @ 25V	±30V	-	135W (Tc)	4.7 Ohm @ 1.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 [K]	TO-220-3
NTB52N10G	ON Semiconductor	MOSFET N-CH 100V 52A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 178W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock395,556	MOSFET (Metal Oxide)	100V	52A (Tc)	10V	4V @ 250µA	135nC @ 10V	3150pF @ 25V	±20V	-	2W (Ta), 178W (Tc)	30 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPA11N80C3XKSA2	Infineon Technologies	MOSFET N-CH 800V 11A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 680µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3 Isolated Tab	Package: TO-220-3 Isolated Tab	Stock4,848	MOSFET (Metal Oxide)	800V	11A (Tc)	10V	3.9V @ 680µA	85nC @ 10V	1600pF @ 100V	±20V	-	34W (Tc)	450 mOhm @ 7.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3 Isolated Tab
IXFQ24N50Q	IXYS	MOSFET N-CH 500V 24A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock3,264	MOSFET (Metal Oxide)	500V	24A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
NVMFS5C410NLAFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8862pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 0.82 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,520	MOSFET (Metal Oxide)	40V	50A (Ta), 330A (Tc)	4.5V, 10V	2V @ 250µA	143nC @ 10V	8862pF @ 25V	±20V	-	3.8W (Ta), 167W (Tc)	0.82 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C670NLWFAFT1G	ON Semiconductor	TRENCH 6 60V FET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,104	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STB100N6F7	STMicroelectronics	MOSFET N-CH 60V 100A F7 D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,864	MOSFET (Metal Oxide)	60V	100A (Tc)	10V	4V @ 250µA	30nC @ 10V	1980pF @ 25V	±20V	-	125W (Tc)	5.6 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TK16A60W,S4VX	Toshiba Semiconductor and Storage	MOSFET N CH 600V 15.8A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock8,520	MOSFET (Metal Oxide)	600V	15.8A (Ta)	10V	3.7V @ 790µA	38nC @ 10V	1350pF @ 300V	±30V	Super Junction	40W (Tc)	190 mOhm @ 7.9A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TPH2R306NH,L1Q	Toshiba Semiconductor and Storage	MOSFET N CH 60V 60A SOP ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock46,728	MOSFET (Metal Oxide)	60V	60A (Tc)	6.5V, 10V	4V @ 1mA	72nC @ 10V	6100pF @ 30V	±20V	-	1.6W (Ta), 78W (Tc)	2.3 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
SI5404BDC-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 5.4A 1206-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock176,508	MOSFET (Metal Oxide)	20V	5.4A (Ta)	2.5V, 4.5V	1.5V @ 250µA	11nC @ 4.5V	-	±12V	-	1.3W (Ta)	28 mOhm @ 5.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
IRL1404ZSTRLPBF	Infineon Technologies	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock16,176	MOSFET (Metal Oxide)	40V	75A (Tc)	4.5V, 10V	2.7V @ 250µA	110nC @ 5V	5080pF @ 25V	±16V	-	230W (Tc)	3.1 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4464DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 200V 1.7A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 240 mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock26,502	MOSFET (Metal Oxide)	200V	1.7A (Ta)	6V, 10V	4V @ 250µA	18nC @ 10V	-	±20V	-	1.5W (Ta)	240 mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI2300DS-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 3.6A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 68 mOhm @ 2.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,723,188	MOSFET (Metal Oxide)	30V	3.6A (Tc)	2.5V, 4.5V	1.5V @ 250µA	10nC @ 10V	320pF @ 15V	±12V	-	1.1W (Ta), 1.7W (Tc)	68 mOhm @ 2.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IPW65R190CFDFKSA1	Infineon Technologies	MOSFET N-CH 650V 17.5A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 730µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	17.5A (Tc)	10V	4.5V @ 730µA	68 nC @ 10 V	1850 pF @ 100 V	±20V	-	151W (Tc)	190mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
DMP4009SSSQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V SO-8 T&R 2 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	10A (Ta)	4.5V, 10V	2.5V @ 250µA	112 nC @ 10 V	5697 pF @ 20 V	±20V	-	1.5W	11mOhm @ 9.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
TSM8N70CI-C0	Taiwan Semiconductor Corporation	MOSFET N-CH 700V 8A ITO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2006 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	700 V	8A (Tc)	10V	4V @ 250µA	32 nC @ 10 V	2006 pF @ 25 V	±30V	-	40W (Tc)	900mOhm @ 4A, 10V	150°C (TJ)	Through Hole	ITO-220AB	TO-220-3 Full Pack, Isolated Tab
FDMC8327L-L701	onsemi	FET 40V 9.7 MOHM MLP33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Stock9,000	MOSFET (Metal Oxide)	40 V	12A (Ta), 14A (Tc)	4.5V, 10V	3V @ 250µA	26 nC @ 10 V	1850 pF @ 20 V	±20V	-	2.3W (Ta), 30W (Tc)	9.7mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
AUXHKGP4062D-E	Infineon Technologies	IC DISCRETE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BS170-D74Z	onsemi	MOSFET N-CH 60V 500MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Package: -	Stock63,876	MOSFET (Metal Oxide)	60 V	500mA (Ta)	10V	3V @ 1mA	-	40 pF @ 10 V	±20V	-	830mW (Ta)	5Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
FDC5661N	onsemi	FET 60V 50.0 MOHM SSOT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-23-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock9,000	MOSFET (Metal Oxide)	60 V	4.3A (Ta)	4.5V, 10V	3V @ 250µA	19 nC @ 10 V	763 pF @ 25 V	±20V	-	1.6W (Ta)	47mOhm @ 4.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-23-6	SOT-23-6 Thin, TSOT-23-6
IPW65R041CFDFKSA2	Infineon Technologies	MOSFET N-CH 650V 68.5A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 68.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 33.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: -	Stock417	MOSFET (Metal Oxide)	650 V	68.5A (Tc)	10V	4.5V @ 3.3mA	300 nC @ 10 V	8400 pF @ 100 V	±20V	-	500W (Tc)	41mOhm @ 33.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
2SK3481-Z-AZ	Renesas Electronics Corporation	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SQM40020EL_GE3	Vishay Siliconix	MOSFET N-CH 40V 100A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,400	MOSFET (Metal Oxide)	40 V	100A (Tc)	4.5V, 10V	2.2V @ 250µA	165 nC @ 10 V	8800 pF @ 25 V	±20V	-	150W (Tc)	2.2mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GT009N04D5	Goford Semiconductor	N40V,100A,RD<1.3M@10V,VTH1.0V~2. FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6864 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (4.9x5.75) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	45 V	100A (Tc)	4.5V, 10V	2.5V @ 250µA	86 nC @ 10 V	6864 pF @ 20 V	±20V	-	125W (Tc)	1.3mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (4.9x5.75)	8-PowerTDFN
XP10TN135N	YAGEO XSEMI	MOSFET N-CH 100V 2.1A 3A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.38W (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock2,370	MOSFET (Metal Oxide)	100 V	2.1A (Ta), 3A (Tc)	4.5V, 10V	3V @ 250µA	20 nC @ 10 V	980 pF @ 25 V	±20V	-	1.38W (Ta)	135mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
PJA3401_R1_00001-ML	MOSLEADER	P -30V -3.6A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-