Page 760 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFZ24NSTRL
Infineon Technologies

MOSFET N-CH 55V 17A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,104
IXTH88N15
IXYS

MOSFET N-CH 150V 88A TO-247AD

Package: TO-247-3

Stock7,280
FQI9N08TU
Fairchild/ON Semiconductor

MOSFET N-CH 80V 9.3A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,952
BSS84TC
Diodes Incorporated

MOSFET P-CH 50V 0.13A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock5,216
IRFBE30STRR
Vishay Siliconix

MOSFET N-CH 800V 4.1A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,408
IRF9520STRL
Vishay Siliconix

MOSFET P-CH 100V 6.8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock93,960
IRF1404ZSPBF
Infineon Technologies

MOSFET N-CH 40V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,528
IXFE50N50
IXYS

MOSFET N-CH 500V 50A SOT-227B

Package: SOT-227-4, miniBLOC

Stock5,840
IXFT18N90P
IXYS

MOSFET N-CH 900V 18A TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,216
FQA11N90_F109
Fairchild/ON Semiconductor

MOSFET N-CH 900V 11.4A TO-3P

Package: TO-3P-3, SC-65-3

Stock390,000
IXTQ14N60P
IXYS

MOSFET N-CH 600V 14A TO-3P

Package: TO-3P-3, SC-65-3

Stock390,000
BSS84AKVL
Nexperia USA Inc.

BSS84AK/SOT23/TO-236AB

Package: -

Stock6,320
STF10N95K5
STMicroelectronics

MOSFET N-CH 950V 8A TO-220FP

Package: TO-220-3 Full Pack

Stock60,000
IRFZ46NLPBF
Infineon Technologies

MOSFET N-CH 55V 53A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock9,864
IPD26N06S2L35ATMA2
Infineon Technologies

MOSFET N-CH 55V 30A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,864
STF28NM60ND
STMicroelectronics

MOSFET N-CH 600V 23A TO220FP

Package: TO-220-3 Full Pack

Stock3,456
NTMS5P02R2G
ON Semiconductor

MOSFET P-CH 20V 3.95A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock486,096
AO3406
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 3.6A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock5,053,920
SI2312BDS-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 3.9A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,757,004
DMN2005LP4K-7
Diodes Incorporated

MOSFET N-CH 20V 200MA 3-DFN

Package: 3-XFDFN

Stock384,492

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFZ24NSTRL	Infineon Technologies	MOSFET N-CH 55V 17A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,104	MOSFET (Metal Oxide)	55V	17A (Tc)	10V	4V @ 250µA	20nC @ 10V	370pF @ 25V	±20V	-	3.8W (Ta), 45W (Tc)	70 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTH88N15	IXYS	MOSFET N-CH 150V 88A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock7,280	MOSFET (Metal Oxide)	150V	88A (Tc)	10V	4V @ 250µA	170nC @ 10V	4000pF @ 25V	±20V	-	400W (Tc)	22 mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
FQI9N08TU	Fairchild/ON Semiconductor	MOSFET N-CH 80V 9.3A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 4.65A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,952	MOSFET (Metal Oxide)	80V	9.3A (Tc)	10V	4V @ 250µA	7.7nC @ 10V	250pF @ 25V	±25V	-	3.75W (Ta), 40W (Tc)	210 mOhm @ 4.65A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2Pak, TO-262AA
BSS84TC	Diodes Incorporated	MOSFET P-CH 50V 0.13A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,216	MOSFET (Metal Oxide)	50V	130mA (Ta)	5V	2V @ 1mA	-	40pF @ 25V	±20V	-	360mW (Ta)	10 Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IRFBE30STRR	Vishay Siliconix	MOSFET N-CH 800V 4.1A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,408	MOSFET (Metal Oxide)	800V	4.1A (Tc)	10V	4V @ 250µA	78nC @ 10V	1300pF @ 25V	±20V	-	125W (Tc)	3 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9520STRL	Vishay Siliconix	MOSFET P-CH 100V 6.8A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock93,960	MOSFET (Metal Oxide)	100V	6.8A (Tc)	10V	4V @ 250µA	18nC @ 10V	390pF @ 25V	±20V	-	3.7W (Ta), 60W (Tc)	600 mOhm @ 4.1A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF1404ZSPBF	Infineon Technologies	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,528	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 150µA	150nC @ 10V	4340pF @ 25V	±20V	-	200W (Tc)	3.7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFE50N50	IXYS	MOSFET N-CH 500V 50A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 50A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 25A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,840	MOSFET (Metal Oxide)	500V	50A	10V	4.5V @ 8mA	330nC @ 10V	9400pF @ 25V	±20V	-	500W (Tc)	100 mOhm @ 25A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFT18N90P	IXYS	MOSFET N-CH 900V 18A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,216	MOSFET (Metal Oxide)	900V	18A (Tc)	10V	6.5V @ 1mA	97nC @ 10V	5230pF @ 25V	±30V	-	540W (Tc)	600 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
FQA11N90_F109	Fairchild/ON Semiconductor	MOSFET N-CH 900V 11.4A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 960 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock390,000	MOSFET (Metal Oxide)	900V	11.4A (Tc)	10V	5V @ 250µA	94nC @ 10V	3500pF @ 25V	±30V	-	300W (Tc)	960 mOhm @ 5.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
IXTQ14N60P	IXYS	MOSFET N-CH 600V 14A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock390,000	MOSFET (Metal Oxide)	600V	14A (Tc)	10V	5.5V @ 250µA	36nC @ 10V	2500pF @ 25V	±30V	-	300W (Tc)	550 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
BSS84AKVL	Nexperia USA Inc.	BSS84AK/SOT23/TO-236AB FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,320	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STF10N95K5	STMicroelectronics	MOSFET N-CH 950V 8A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock60,000	MOSFET (Metal Oxide)	950V	8A (Tc)	10V	5V @ 100µA	22nC @ 10V	630pF @ 100V	±30V	-	30W (Tc)	800 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IRFZ46NLPBF	Infineon Technologies	MOSFET N-CH 55V 53A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1696pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock9,864	MOSFET (Metal Oxide)	55V	53A (Tc)	10V	4V @ 250µA	72nC @ 10V	1696pF @ 25V	±20V	-	3.8W (Ta), 107W (Tc)	16.5 mOhm @ 28A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IPD26N06S2L35ATMA2	Infineon Technologies	MOSFET N-CH 55V 30A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 621pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,864	MOSFET (Metal Oxide)	55V	30A (Tc)	4.5V, 10V	2V @ 26µA	24nC @ 10V	621pF @ 25V	±20V	-	68W (Tc)	35 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPak (2 Leads + Tab), SC-63
STF28NM60ND	STMicroelectronics	MOSFET N-CH 600V 23A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 11.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,456	MOSFET (Metal Oxide)	600V	23A (Tc)	10V	5V @ 250µA	62.5nC @ 10V	2090pF @ 100V	±25V	-	35W (Tc)	150 mOhm @ 11.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
NTMS5P02R2G	ON Semiconductor	MOSFET P-CH 20V 3.95A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 16V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 790mW (Ta) Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock486,096	MOSFET (Metal Oxide)	20V	3.95A (Ta)	2.5V, 4.5V	1.25V @ 250µA	35nC @ 4.5V	1900pF @ 16V	±10V	-	790mW (Ta)	33 mOhm @ 5.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
AO3406	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 3.6A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3L Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,053,920	MOSFET (Metal Oxide)	30V	3.6A (Ta)	4.5V, 10V	2.5V @ 250µA	5nC @ 10V	210pF @ 15V	±20V	-	1.4W (Ta)	50 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3L	TO-236-3, SC-59, SOT-23-3
SI2312BDS-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 3.9A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,757,004	MOSFET (Metal Oxide)	20V	3.9A (Ta)	1.8V, 4.5V	850mV @ 250µA	12nC @ 4.5V	-	±8V	-	750mW (Ta)	31 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
DMN2005LP4K-7	Diodes Incorporated	MOSFET N-CH 20V 200MA 3-DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 900mV @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 3V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN1006-3 Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock384,492	MOSFET (Metal Oxide)	20V	200mA (Ta)	1.5V, 4V	900mV @ 100µA	-	41pF @ 3V	±10V	-	400mW (Ta)	1.5 Ohm @ 10mA, 4V	-65°C ~ 150°C (TJ)	Surface Mount	X2-DFN1006-3	3-XFDFN
IMBG65R072M1HXTMA1	Infineon Technologies	SILICON CARBIDE MOSFET PG-TO263- FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock2,466	SiCFET (Silicon Carbide)	650 V	33A (Tc)	18V	5.7V @ 4mA	22 nC @ 18 V	744 pF @ 400 V	+23V, -5V	-	140W (Tc)	94mOhm @ 13.3A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
DMN10H220LFVW-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	11A (Tc)	4.5V, 10V	2.5V @ 250µA	6.7 nC @ 10 V	366 pF @ 50 V	±20V	-	2.4W (Ta), 41W (Tc)	222mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
PJA3441-AU_R1_000A1	Panjit International Inc.	SOT-23, MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 88mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock68,214	MOSFET (Metal Oxide)	40 V	3.1A (Ta)	4.5V, 10V	2.5V @ 250µA	6 nC @ 4.5 V	505 pF @ 20 V	±20V	-	1.25W (Ta)	88mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SIHP12N50E-BE3	Vishay Siliconix	N-CHANNEL 500V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,946	MOSFET (Metal Oxide)	500 V	10.5A (Tc)	10V	4V @ 250µA	50 nC @ 10 V	886 pF @ 100 V	±30V	-	114W (Tc)	380mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
CDM2206-800LR	Central Semiconductor Corp	MOSFET N-CH 800V 6A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 474.7 pF @ 100 V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	6A (Tc)	10V	4V @ 250µA	24.3 nC @ 10 V	474.7 pF @ 100 V	30V	-	110W (Tc)	950mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
RQA0009SXAQS-H1	Renesas Electronics Corporation	MOSFET N-CH 16V 3.2A UPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 0 V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UPAK Package / Case: TO-243AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	16 V	3.2A (Ta)	-	800mV @ 1mA	-	76 pF @ 0 V	±5V	-	15W (Tc)	-	150°C	Surface Mount	UPAK	TO-243AA
EPC2059	EPC	TRANS GAN 170V DIE .009OHM FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 170 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 85 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Stock86,190	GaNFET (Gallium Nitride)	170 V	24A (Ta)	5V	2.5V @ 3mA	7.4 nC @ 5 V	836 pF @ 85 V	+6V, -4V	-	-	9mOhm @ 10A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
AOTL42A60E	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V TOLLA FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-