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Vishay Siliconix |
MOSFET N-CH 40V 42.5A 8-SO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 42.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4070pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,328 |
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MOSFET (Metal Oxide) | 40V | 42.5A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 87nC @ 10V | 4070pF @ 20V | ±20V | - | 3.5W (Ta), 7.8W (Tc) | 2.4 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 25V 1A SOT-363
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 630mW (Ta)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 600mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-88/SC70-6/SOT-363
- Package / Case: 6-TSSOP, SC-88, SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock6,896 |
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MOSFET (Metal Oxide) | 25V | 1A (Ta) | 2.7V, 4.5V | 1.5V @ 250µA | 1.5nC @ 4.5V | 60pF @ 10V | ±8V | - | 630mW (Ta) | 350 mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 75A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 129nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4115pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 260W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock6,032 |
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MOSFET (Metal Oxide) | 60V | 75A (Tc) | 4.5V, 10V | 3V @ 250µA | 129nC @ 10V | 4115pF @ 25V | ±16V | - | 260W (Tc) | 8 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 80V 11.2A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 11.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 115 mOhm @ 5.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock2,032 |
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MOSFET (Metal Oxide) | 80V | 11.2A (Tc) | 10V | 4V @ 250µA | 15nC @ 10V | 450pF @ 25V | ±25V | - | 30W (Tc) | 115 mOhm @ 5.6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): 31W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220 Full Pack
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock3,008 |
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MOSFET (Metal Oxide) | 650V | - | 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | ±20V | Super Junction | 31W (Tc) | 400 mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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IXYS |
MOSFET P-CH 100V 36A TO-247
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock6,944 |
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MOSFET (Metal Oxide) | 100V | 36A (Tc) | 10V | 5V @ 250µA | 95nC @ 10V | 2800pF @ 25V | ±20V | - | 180W (Tc) | 75 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Renesas Electronics America |
MOSFET N-CH 30V 45A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 22.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-LFPAK
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock2,048 |
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MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | - | 27nC @ 4.5V | 4400pF @ 10V | ±20V | - | 25W (Tc) | 3.8 mOhm @ 22.5A, 10V | 150°C (TJ) | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET N-CH 100V 7.7A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,944 |
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MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 270 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 8A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock435,372 |
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MOSFET (Metal Oxide) | 30V | 8A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 25nC @ 10V | 2000pF @ 25V | ±20V | - | 800mW (Ta) | 8.4 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 600V 17A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 50V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock12,276 |
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MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 4V @ 250µA | 46nC @ 10V | 1400pF @ 50V | ±30V | - | 125W (Tc) | 190 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET NCH 1.2KV 17A TO247N
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 800V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 103W (Tc)
- Rds On (Max) @ Id, Vgs: 208 mOhm @ 5A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock6,048 |
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SiCFET (Silicon Carbide) | 1200V | 17A (Tc) | 18V | 5.6V @ 2.5mA | 42nC @ 18V | 398pF @ 800V | +22V, -4V | - | 103W (Tc) | 208 mOhm @ 5A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Nexperia USA Inc. |
MOSFET N-CH 75V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 8840pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,792 |
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MOSFET (Metal Oxide) | 75V | 75A (Tc) | 4.5V, 10V | 2V @ 1mA | - | 8840pF @ 25V | ±10V | - | 230W (Tc) | 8.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 4A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 52 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3L
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock15,336 |
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MOSFET (Metal Oxide) | 30V | 4A (Ta) | 2.5V, 10V | 1.5V @ 250µA | 10nC @ 10V | 245pF @ 15V | ±12V | - | 1.4W (Ta) | 52 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
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STMicroelectronics |
MOSFET P-CH 30V 6A POWERFLAT
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.9W (Tc)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat? (3.3x3.3)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock2,160 |
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MOSFET (Metal Oxide) | 30V | 6A (Tc) | 4.5V, 10V | 1V @ 250µA (Min) | 12nC @ 4.5V | 1450pF @ 25V | ±20V | - | 2.9W (Tc) | 30 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | PowerFlat? (3.3x3.3) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 6A SC59-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-59
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock25,686 |
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MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 10.5nC @ 5V | 755pF @ 10V | ±20V | - | 1.4W (Ta) | 30 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 55V 31A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB Full-Pak
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock124,200 |
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MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 4V @ 250µA | 65nC @ 10V | 1300pF @ 25V | ±20V | - | 45W (Tc) | 24 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 9A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock6,480 |
|
MOSFET (Metal Oxide) | 600V | 9A (Tc) | 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 400V | ±18V | - | 65W (Tc) | 350 mOhm @ 5.5A, 8V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Rohm Semiconductor |
PCH -60V -5A SMALL SIGNAL POWER
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT8
- Package / Case: 8-SMD, Flat Lead
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Package: - |
Stock6,255 |
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MOSFET (Metal Oxide) | 60 V | 5A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 38 nC @ 10 V | 2160 pF @ 30 V | ±20V | - | 1.1W (Ta) | 39mOhm @ 5A, 10V | 150°C (TJ) | Surface Mount | TSMT8 | 8-SMD, Flat Lead |
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onsemi |
30V N-CHANNEL POWERTRENCH MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 4.5V, 10V | 3V @ 250µA | 45 nC @ 10 V | 2400 pF @ 15 V | ±20V | - | 1W (Ta) | 7mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 3X3 DFN
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Diotec Semiconductor |
MOSFET, DFN1006-3, 60V, 0.35A, 1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 350mA
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 223mW
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006-3
- Package / Case: SC-101, SOT-883
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 350mA | 2.5V, 10V | 1V @ 250µA | 1.9 nC @ 10 V | 32 pF @ 25 V | ±20V | - | 223mW | 1.4Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2639 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5mOhm@ 31A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 62A (Ta) | 4.5V, 10V | 3V @ 1mA | 32 nC @ 5 V | 2639 pF @ 15 V | ±20V | - | 62.5W (Tc) | 8.5mOhm@ 31A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Panjit International Inc. |
650V/ 390MOHM / 10A/ EASY TO DRI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 87.5W (Tc)
- Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock1,761 |
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MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 4V @ 250µA | 19 nC @ 10 V | 726 pF @ 400 V | ±30V | - | 87.5W (Tc) | 390mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 30A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 4.75V @ 250µA | 44.3 nC @ 10 V | 1960 pF @ 100 V | ±25V | - | 208W (Tc) | 99mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 300A 8HSOF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 22945 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 429W (Tc)
- Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 300A (Tc) | 10V | 4V @ 230µA | 287 nC @ 10 V | 22945 pF @ 25 V | ±20V | - | 429W (Tc) | 0.76mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
OPTIMOS POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs(th) (Max) @ Id: 3V @ 145µA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 11144 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-5
- Package / Case: 5-PowerSFN
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Package: - |
Stock8,436 |
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MOSFET (Metal Oxide) | 40 V | 62A (Ta) | 7V, 10V | 3V @ 145µA | 170 nC @ 10 V | 11144 pF @ 25 V | ±20V | - | 250W (Tc) | 0.55mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-5-5 | 5-PowerSFN |