Page 902 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

HAT2299WP-EL-E
Renesas Electronics America

MOSFET N-CH WPAK

Package: 8-PowerWDFN

Stock4,560
IRL530A
Fairchild/ON Semiconductor

MOSFET N-CH 100V 14A TO-220

Package: TO-220-3

Stock4,336
FDD6680A
Fairchild/ON Semiconductor

MOSFET N-CH 30V 14A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock225,144
STP7NK30Z
STMicroelectronics

MOSFET N-CH 300V 5A TO-220

Package: TO-220-3

Stock172,224
APT33N90JCU2
Microsemi Corporation

MOSFET N-CH 900V 33A SOT227

Package: SOT-227-4, miniBLOC

Stock7,008
IXTA75N10P
IXYS

MOSFET N-CH 100V 75A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,176
LP0701LG-G
Microchip Technology

MOSFET P-CH 16.5V 0.7A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,808
IRLIZ24G
Vishay Siliconix

MOSFET N-CH 60V 14A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock6,544
IPP060N06NAKSA1
Infineon Technologies

MOSFET N-CH 60V 17A TO220-3

Package: TO-220-3

Stock3,680
BUK9875-100A/CUX
Nexperia USA Inc.

MOSFET N-CH 100V 7A SOT223

Package: TO-261-4, TO-261AA

Stock6,576
NTMS4920NR2G
ON Semiconductor

MOSFET N-CH 30V 10.6A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock533,088
STFI24N60M2
STMicroelectronics

MOSFET N CH 600V 18A TO281

Package: TO-262-3 Full Pack, I2Pak

Stock8,580
NTB6410ANT4G
ON Semiconductor

MOSFET N-CH 100V 76A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock20,724
IRFL210TRPBF-BE3
Vishay Siliconix

MOSFET N-CH 200V 960MA SOT223

Package: -

Stock6,819
UPA2807T1L-E1-AT
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
RFD16N05_NL
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
NVMJST2D6N08HTXG
onsemi

TRENCH 8 80V LFPAK 5X7

Package: -

Request a Quote
XP10NA8R4IT
YAGEO XSEMI

MOSFET N-CH 100V 44A TO220CFM

Package: -

Stock3,000
TK040N65Z-S1F
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 57A TO247

Package: -

Stock450
IRLH6224TR2PBF
Infineon Technologies

MOSFET N CH 20V 28A PQFN 5X6 MM

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
HAT2299WP-EL-E	Renesas Electronics America	MOSFET N-CH WPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock4,560	MOSFET (Metal Oxide)	150V	14A (Ta)	10V	-	15nC @ 10V	710pF @ 25V	±30V	-	25W (Tc)	110 mOhm @ 7A, 10V	150°C (TJ)	Surface Mount	8-WPAK	8-PowerWDFN
IRL530A	Fairchild/ON Semiconductor	MOSFET N-CH 100V 14A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 7A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,336	MOSFET (Metal Oxide)	100V	14A (Tc)	5V	2V @ 250µA	24nC @ 5V	755pF @ 25V	±20V	-	62W (Tc)	120 mOhm @ 7A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDD6680A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock225,144	MOSFET (Metal Oxide)	30V	14A (Ta), 56A (Tc)	4.5V, 10V	3V @ 250µA	20nC @ 5V	1425pF @ 15V	±20V	-	2.8W (Ta), 60W (Tc)	9.5 mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
STP7NK30Z	STMicroelectronics	MOSFET N-CH 300V 5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock172,224	MOSFET (Metal Oxide)	300V	5A (Tc)	10V	4.5V @ 50µA	13nC @ 10V	380pF @ 25V	±30V	-	50W (Tc)	900 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
APT33N90JCU2	Microsemi Corporation	MOSFET N-CH 900V 33A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 33A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,008	MOSFET (Metal Oxide)	900V	33A	10V	3.5V @ 3mA	270nC @ 10V	6800pF @ 100V	±20V	Super Junction	290W (Tc)	120 mOhm @ 26A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
IXTA75N10P	IXYS	MOSFET N-CH 100V 75A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,176	MOSFET (Metal Oxide)	100V	75A (Tc)	10V	5.5V @ 250µA	74nC @ 10V	2250pF @ 25V	±20V	-	360W (Tc)	25 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
LP0701LG-G	Microchip Technology	MOSFET P-CH 16.5V 0.7A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16.5V Current - Continuous Drain (Id) @ 25°C: 700mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 300mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,808	MOSFET (Metal Oxide)	16.5V	700mA (Tj)	2V, 5V	1V @ 1mA	-	250pF @ 15V	±10V	-	1.5W (Tc)	1.5 Ohm @ 300mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IRLIZ24G	Vishay Siliconix	MOSFET N-CH 60V 14A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,544	MOSFET (Metal Oxide)	60V	14A (Tc)	4V, 5V	2V @ 250µA	18nC @ 5V	870pF @ 25V	±10V	-	37W (Tc)	100 mOhm @ 8.4A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IPP060N06NAKSA1	Infineon Technologies	MOSFET N-CH 60V 17A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2.8V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock3,680	MOSFET (Metal Oxide)	60V	17A (Ta), 45A (Tc)	6V, 10V	2.8V @ 36µA	27nC @ 10V	2000pF @ 30V	±20V	-	3W (Ta), 83W (Tc)	6 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
BUK9875-100A/CUX	Nexperia USA Inc.	MOSFET N-CH 100V 7A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 8W (Tc) Rds On (Max) @ Id, Vgs: 72 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock6,576	MOSFET (Metal Oxide)	100V	7A (Tc)	4.5V, 10V	2V @ 1mA	-	1690pF @ 25V	±10V	-	8W (Tc)	72 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NTMS4920NR2G	ON Semiconductor	MOSFET N-CH 30V 10.6A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4068pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 820mW (Ta) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock533,088	MOSFET (Metal Oxide)	30V	10.6A (Ta)	4.5V, 10V	3V @ 250µA	58.9nC @ 10V	4068pF @ 25V	±20V	-	820mW (Ta)	4.3 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
STFI24N60M2	STMicroelectronics	MOSFET N CH 600V 18A TO281 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock8,580	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4V @ 250µA	29nC @ 10V	1060pF @ 100V	±25V	-	30W (Tc)	190 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
NTB6410ANT4G	ON Semiconductor	MOSFET N-CH 100V 76A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 76A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock20,724	MOSFET (Metal Oxide)	100V	76A (Tc)	10V	4V @ 250µA	120nC @ 10V	4500pF @ 25V	±20V	-	188W (Tc)	13 mOhm @ 76A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFL210TRPBF-BE3	Vishay Siliconix	MOSFET N-CH 200V 960MA SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 960mA (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock6,819	MOSFET (Metal Oxide)	200 V	960mA (Tc)	-	4V @ 250µA	8.2 nC @ 10 V	140 pF @ 25 V	±20V	-	2W (Ta), 3.1W (Tc)	1.5Ohm @ 580mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
UPA2807T1L-E1-AT	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RFD16N05_NL	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 72W (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	16A (Tc)	10V	4V @ 250µA	80 nC @ 20 V	900 pF @ 25 V	±20V	-	72W (Tc)	47mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
NVMJST2D6N08HTXG	onsemi	TRENCH 8 80V LFPAK 5X7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 131.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.3W (Ta), 116W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-TCPAK Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	28A (Ta), 131.5A (Tc)	10V	4V @ 250µA	68 nC @ 10 V	4405 pF @ 40 V	±20V	-	5.3W (Ta), 116W (Tc)	2.8mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	10-TCPAK	10-PowerLSOP (0.209", 5.30mm Width)
XP10NA8R4IT	YAGEO XSEMI	MOSFET N-CH 100V 44A TO220CFM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3248 pF @ 80 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.92W (Ta), 32W (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220CFM Package / Case: TO-220-3 Full Pack	Package: -	Stock3,000	MOSFET (Metal Oxide)	100 V	44A (Tc)	10V	4V @ 250µA	67.2 nC @ 10 V	3248 pF @ 80 V	±20V	-	1.92W (Ta), 32W (Tc)	8.4mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220CFM	TO-220-3 Full Pack
TK040N65Z-S1F	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 57A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 57A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.85mA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock450	MOSFET (Metal Oxide)	650 V	57A (Ta)	10V	4V @ 2.85mA	105 nC @ 10 V	6250 pF @ 300 V	±30V	-	360W (Tc)	40mOhm @ 28.5A, 10V	150°C	Through Hole	TO-247	TO-247-3
IRLH6224TR2PBF	Infineon Technologies	MOSFET N CH 20V 28A PQFN 5X6 MM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.1V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	28A (Ta), 105A (Tc)	-	1.1V @ 50µA	86 nC @ 10 V	3710 pF @ 10 V	-	-	-	3mOhm @ 20A, 4.5V	-	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
DMP510DLQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT23 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 196mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520mW (Ta) Rds On (Max) @ Id, Vgs: 9.5Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	196mA (Ta)	5V	2V @ 1mA	0.5 nC @ 10 V	40 pF @ 25 V	±30V	-	520mW (Ta)	9.5Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
2SK973L-E	Renesas Electronics Corporation	GENERAL SWITCHING POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA034N08NM5SXKSA1	Infineon Technologies	TRENCH 40<-<100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJE138K-AU_R1_000A1	Panjit International Inc.	SOT-523, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 223mW (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Flat Leads Package / Case: SC-89, SOT-490	Package: -	Stock103,506	MOSFET (Metal Oxide)	50 V	350mA (Ta)	2.5V, 10V	1.5V @ 250µA	1 nC @ 4.5 V	50 pF @ 25 V	±20V	-	223mW (Ta)	1.6Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523 Flat Leads	SC-89, SOT-490
IRFC140NB	Infineon Technologies	MOSFET 100V 33A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 33A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 44mOhm @ 33A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	33A	10V	-	-	-	-	-	-	44mOhm @ 33A, 10V	-	Surface Mount	Die	Die
2SK3113-0-Z-E1-AZ	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET SWITCHING FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFP4468PBFXKMA1	Infineon Technologies	TRENCH >=100V PG-TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 290A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19860 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Stock1,149	MOSFET (Metal Oxide)	100 V	290A (Tc)	10V	4V @ 250µA	540 nC @ 10 V	19860 pF @ 50 V	±20V	-	520W (Tc)	2.6mOhm @ 180A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
2N7002KL3A-TP	Micro Commercial Co	N-CHANNEL MOSFET,DFN1006-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: SC-101, SOT-883	Package: -	Stock55,818	MOSFET (Metal Oxide)	60 V	260mA (Ta)	4.5V, 10V	2.5V @ 250µA	1.22 nC @ 10 V	21 pF @ 30 V	±20V	-	200mW	2.5Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006-3	SC-101, SOT-883