Page 903 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BUK9237-55,118
NXP

MOSFET N-CH 55V 32A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,584
HUFA75652G3
Fairchild/ON Semiconductor

MOSFET N-CH 100V 75A TO-247

Package: TO-247-3

Stock3,360
NTP125N02RG
ON Semiconductor

MOSFET N-CH 24V 15.9A TO220AB

Package: TO-220-3

Stock390,012
IPI70N12S311AKSA1
Infineon Technologies

MOSFET N-CHANNEL_100+

Package: -

Stock4,480
BSC027N06LS5ATMA1
Infineon Technologies

DIFFERENTIATED MOSFETS

Package: -

Stock7,760
IPD050N03LGATMA1
Infineon Technologies

MOSFET N-CH 30V 50A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,104
IXFN24N90Q
IXYS

MOSFET N-CH 900V 24A SOT-227B

Package: SOT-227-4, miniBLOC

Stock7,648
BSS138
Fairchild/Micross Components

DIE MOSFET N-CH 50V LL

Package: TO-236-3, SC-59, SOT-23-3

Stock6,894,348
FDB9406_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V 110A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,472
NVMFS5C460NLAFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock7,328
AOI423
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 15A

Package: TO-251-3 Stub Leads, IPak

Stock6,592
EFC4615R-TR
ON Semiconductor

MOSFET N-CH 24V 6A EFCP

Package: 4-XBGA, 4-FCBGA

Stock333,744
STB30N80K5
STMicroelectronics

MOSFET N-CH 800V 24A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,664
RSQ045N03TR
Rohm Semiconductor

MOSFET N-CH 30V 4.5A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock837,276
RSS085N05FU6TB
Rohm Semiconductor

MOSFET N-CH 45V 8.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,376
AOU3N60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock157,488
FQB34N20LTM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 31A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock17,436
PSMN016-100BS,118
Nexperia USA Inc.

MOSFET N-CH 100V 57A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock29,046
IRF624SPBF
Vishay Siliconix

MOSFET N-CH 250V 4.4A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock41,208
IPB339N20NM6ATMA1
Infineon Technologies

MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BUK9237-55,118	NXP	MOSFET N-CH 55V 32A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1236pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 33 mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,584	MOSFET (Metal Oxide)	55V	32A (Tc)	-	2V @ 1mA	17.6nC @ 5V	1236pF @ 25V	-	-	-	33 mOhm @ 15A, 10V	-	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA75652G3	Fairchild/ON Semiconductor	MOSFET N-CH 100V 75A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 475nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 7585pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 515W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,360	MOSFET (Metal Oxide)	100V	75A (Tc)	10V	4V @ 250µA	475nC @ 20V	7585pF @ 25V	±20V	-	515W (Tc)	8 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
NTP125N02RG	ON Semiconductor	MOSFET N-CH 24V 15.9A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,012	MOSFET (Metal Oxide)	24V	15.9A (Ta)	4.5V, 10V	2V @ 250µA	28nC @ 4.5V	3440pF @ 20V	±20V	-	1.98W (Ta), 113.6W (Tc)	4.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPI70N12S311AKSA1	Infineon Technologies	MOSFET N-CHANNEL_100+ FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,480	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC027N06LS5ATMA1	Infineon Technologies	DIFFERENTIATED MOSFETS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,760	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD050N03LGATMA1	Infineon Technologies	MOSFET N-CH 30V 50A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,104	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.2V @ 250µA	31nC @ 10V	3200pF @ 15V	±20V	-	68W (Tc)	5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFN24N90Q	IXYS	MOSFET N-CH 900V 24A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 24A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,648	MOSFET (Metal Oxide)	900V	24A	-	-	-	-	-	-	-	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
BSS138	Fairchild/Micross Components	DIE MOSFET N-CH 50V LL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,894,348	MOSFET (Metal Oxide)	50V	220mA (Ta)	10V	1.5V @ 1mA	2.4nC @ 10V	27pF @ 25V	±20V	-	360mW (Ta)	3.5 Ohm @ 220mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
FDB9406_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V 110A TO263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tj) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,472	MOSFET (Metal Oxide)	40V	110A (Tc)	10V	4V @ 250µA	138nC @ 10V	7710pF @ 25V	±20V	-	176W (Tj)	1.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVMFS5C460NLAFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock7,328	MOSFET (Metal Oxide)	40V	21A (Ta), 78A (Tc)	4.5V, 10V	2V @ 250µA	23nC @ 10V	1300pF @ 25V	±20V	-	3.6W (Ta), 50W (Tc)	4.5 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
AOI423	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 15A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock6,592	MOSFET (Metal Oxide)	30V	15A (Ta), 70A (Tc)	10V, 20V	3.5V @ 250µA	65nC @ 10V	2760pF @ 15V	±25V	-	2.5W (Ta), 90W (Tc)	6.7 mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPak
EFC4615R-TR	ON Semiconductor	MOSFET N-CH 24V 6A EFCP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 31 mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EFCP1515-4CC-037 Package / Case: 4-XBGA, 4-FCBGA	Package: 4-XBGA, 4-FCBGA	Stock333,744	MOSFET (Metal Oxide)	24V	6A (Ta)	2.5V, 4.5V	1.3V @ 1mA	8.8nC @ 4.5V	-	±12V	-	1.6W (Ta)	31 mOhm @ 3A, 4.5V	150°C (TJ)	Surface Mount	EFCP1515-4CC-037	4-XBGA, 4-FCBGA
STB30N80K5	STMicroelectronics	MOSFET N-CH 800V 24A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,664	MOSFET (Metal Oxide)	800V	24A (Tc)	10V	5V @ 100µA	43nC @ 10V	1530pF @ 100V	±30V	-	250W (Tc)	180 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RSQ045N03TR	Rohm Semiconductor	MOSFET N-CH 30V 4.5A TSMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 38 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock837,276	MOSFET (Metal Oxide)	30V	4.5A (Ta)	4V, 10V	2.5V @ 1mA	9.5nC @ 5V	520pF @ 10V	±20V	-	600mW (Ta)	38 mOhm @ 4.5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RSS085N05FU6TB	Rohm Semiconductor	MOSFET N-CH 45V 8.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,376	MOSFET (Metal Oxide)	45V	8.5A (Ta)	4V, 10V	-	21.4nC @ 5V	1500pF @ 10V	20V	-	2W (Ta)	18 mOhm @ 8.5A, 10V	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
AOU3N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 2.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 56.8W (Tc) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1.25A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock157,488	MOSFET (Metal Oxide)	600V	2.5A (Tc)	10V	4.5V @ 250µA	12nC @ 10V	370pF @ 25V	±30V	-	56.8W (Tc)	3.5 Ohm @ 1.25A, 10V	-50°C ~ 150°C (TJ)	Through Hole	TO-251-3	TO-251-3 Short Leads, IPak, TO-251AA
FQB34N20LTM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 31A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 15.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock17,436	MOSFET (Metal Oxide)	200V	31A (Tc)	5V, 10V	2V @ 250µA	72nC @ 5V	3900pF @ 25V	±20V	-	3.13W (Ta), 180W (Tc)	75 mOhm @ 15.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN016-100BS,118	Nexperia USA Inc.	MOSFET N-CH 100V 57A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 57A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2404pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 148W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock29,046	MOSFET (Metal Oxide)	100V	57A (Tj)	10V	4V @ 1mA	49nC @ 10V	2404pF @ 50V	±20V	-	148W (Tc)	16 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF624SPBF	Vishay Siliconix	MOSFET N-CH 250V 4.4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock41,208	MOSFET (Metal Oxide)	250V	4.4A (Tc)	10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	±20V	-	3.1W (Ta), 50W (Tc)	1.1 Ohm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB339N20NM6ATMA1	Infineon Technologies	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPF042N10NF2SATMA1	Infineon Technologies	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	Package: -	Stock843	MOSFET (Metal Oxide)	100 V	21A (Ta), 139A (Tc)	6V, 10V	3.8V @ 93µA	85 nC @ 10 V	4000 pF @ 50 V	±20V	-	3.8W (Ta), 167W (Tc)	4.25mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D2PAK (6 Leads + Tab)
IMZA65R048M1HXKSA1	Infineon Technologies	MOSFET 650V NCH SIC TRENCH FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-3 Package / Case: TO-247-4	Package: -	Stock1,695	SiCFET (Silicon Carbide)	650 V	39A (Tc)	18V	5.7V @ 6mA	33 nC @ 18 V	1118 pF @ 400 V	+23V, -5V	-	125W (Tc)	64mOhm @ 20.1A, 18V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4-3	TO-247-4
APT1003RSFLLG-TR	Microchip Technology	MOSFET N-CH 1KV 4A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 694 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	4A (Tc)	10V	5V @ 1mA	34 nC @ 10 V	694 pF @ 25 V	±30V	-	139W (Tc)	3Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
RD3L050SNFRATL	Rohm Semiconductor	MOSFET N-CH 60V 5A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Ta) Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,176	MOSFET (Metal Oxide)	60 V	5A (Ta)	4V, 10V	3V @ 1mA	8 nC @ 10 V	290 pF @ 10 V	±20V	-	15W (Ta)	109mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
MCAC95N06YHE3-TP	Micro Commercial Co	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tj) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	95A (Tc)	4.5V, 10V	2.2V @ 250µA	85 nC @ 10 V	5300 pF @ 25 V	±20V	-	120W (Tj)	3.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
GSF3404	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 5.80A, 30V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock17,640	MOSFET (Metal Oxide)	30 V	5.8A (Ta)	4.5V, 10V	2.5V @ 250µA	5.2 nC @ 10 V	255 pF @ 15 V	±20V	-	1.4W (Ta)	31mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SIHP6N40D-BE3	Vishay Siliconix	N-CHANNEL 400V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,940	MOSFET (Metal Oxide)	400 V	6A (Tc)	10V	5V @ 250µA	18 nC @ 10 V	311 pF @ 100 V	±30V	-	104W (Tc)	1Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SQ3427CEV-T1_GE3	Vishay Siliconix	MOSFET P-CH 60V 5.3A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	5.3A (Tc)	4.5V, 10V	2.5V @ 250µA	22 nC @ 10 V	1000 pF @ 30 V	±20V	-	5W (Tc)	95mOhm @ 4.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6