Page 904 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRL1404ZLPBF
Infineon Technologies

MOSFET N-CH 40V 75A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock15,396
IPP100N06S3L-04
Infineon Technologies

MOSFET N-CH 55V 100A TO-220

Package: TO-220-3

Stock7,648
IRF7702TR
Infineon Technologies

MOSFET P-CH 12V 8A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock5,360
FQD8P10TF
Fairchild/ON Semiconductor

MOSFET P-CH 100V 6.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,760
2SK3546J0L
Panasonic Electronic Components

MOSFET N-CH 50V .1A SS-MINI-3P

Package: SC-89, SOT-490

Stock98,040
IRFR9120TR
Vishay Siliconix

MOSFET P-CH 100V 5.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock10,968
IRF540S
Vishay Siliconix

MOSFET N-CH 100V 28A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock85,212
APTC60DAM18CTG
Microsemi Corporation

MOSFET N-CH 600V 143A SP4

Package: SP4

Stock3,440
IXFR55N50
IXYS

MOSFET N-CH 500V 48A ISOPLUS247

Package: ISOPLUS247?

Stock97,200
IXFH60N60X
IXYS

MOSFET N-CH 600V 60A TO247

Package: TO-247-3

Stock6,736
R6011ENJTL
Rohm Semiconductor

MOSFET N-CH 600V 11A LPT

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,032
FDP15N40
Fairchild/ON Semiconductor

MOSFET N-CH 400V 15A TO-220

Package: TO-220-3

Stock10,056
SIHH11N60EF-T1-GE3
Vishay Siliconix

MOSFET N-CH 600V 11A POWERPAK8X8

Package: 8-PowerTDFN

Stock24,606
BSC018N04LSGATMA1
Infineon Technologies

MOSFET N-CH 40V 100A TDSON-8

Package: 8-PowerTDFN

Stock52,626
IPZ65R045C7XKSA1
Infineon Technologies

MOSFET N-CH 650V 46A TO247-4

Package: TO-247-4

Stock18,516
ZXMP3A16GTA
Diodes Incorporated

MOSFET P-CH 30V 4.6A SOT223

Package: TO-261-4, TO-261AA

Stock1,164,408
BVSS84LT3G
onsemi

MOSFET P-CH 50V 130MA SOT-23-3

Package: -

Request a Quote
STH2N120K5-2AG
STMicroelectronics

MOSFET N-CH 1200V 1.5A H2PAK-2

Package: -

Stock4,722
BSS138-7-F-79
Diodes Incorporated

DIODE

Package: -

Request a Quote
RJK6014DPP-00-T2
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRL1404ZLPBF	Infineon Technologies	MOSFET N-CH 40V 75A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock15,396	MOSFET (Metal Oxide)	40V	120A (Tc)	4.5V, 10V	2.7V @ 250µA	110nC @ 5V	5080pF @ 25V	±16V	-	230W (Tc)	3.1 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IPP100N06S3L-04	Infineon Technologies	MOSFET N-CH 55V 100A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 362nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17270pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock7,648	MOSFET (Metal Oxide)	55V	100A (Tc)	5V, 10V	2.2V @ 150µA	362nC @ 10V	17270pF @ 25V	±16V	-	214W (Tc)	3.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRF7702TR	Infineon Technologies	MOSFET P-CH 12V 8A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock5,360	MOSFET (Metal Oxide)	12V	8A (Tc)	1.8V, 4.5V	1.2V @ 250µA	81nC @ 4.5V	3470pF @ 10V	±8V	-	1.5W (Tc)	14 mOhm @ 8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
FQD8P10TF	Fairchild/ON Semiconductor	MOSFET P-CH 100V 6.6A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,760	MOSFET (Metal Oxide)	100V	6.6A (Tc)	10V	4V @ 250µA	15nC @ 10V	470pF @ 25V	±30V	-	2.5W (Ta), 44W (Tc)	530 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
2SK3546J0L	Panasonic Electronic Components	MOSFET N-CH 50V .1A SS-MINI-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V Vgs (Max): ±7V FET Feature: - Power Dissipation (Max): 125mW (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSMini3-F1 Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock98,040	MOSFET (Metal Oxide)	50V	100mA (Ta)	2.5V, 4V	1.5V @ 1µA	-	12pF @ 3V	±7V	-	125mW (Ta)	12 Ohm @ 10mA, 4V	125°C (TJ)	Surface Mount	SSMini3-F1	SC-89, SOT-490
IRFR9120TR	Vishay Siliconix	MOSFET P-CH 100V 5.6A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock10,968	MOSFET (Metal Oxide)	100V	5.6A (Tc)	10V	4V @ 250µA	18nC @ 10V	390pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	600 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF540S	Vishay Siliconix	MOSFET N-CH 100V 28A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock85,212	MOSFET (Metal Oxide)	100V	28A (Tc)	10V	4V @ 250µA	72nC @ 10V	1700pF @ 25V	±20V	-	3.7W (Ta), 150W (Tc)	77 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APTC60DAM18CTG	Microsemi Corporation	MOSFET N-CH 600V 143A SP4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 143A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 1036nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 833W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 71.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	Package: SP4	Stock3,440	MOSFET (Metal Oxide)	600V	143A	10V	3.9V @ 4mA	1036nC @ 10V	28000pF @ 25V	±30V	-	833W (Tc)	18 mOhm @ 71.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
IXFR55N50	IXYS	MOSFET N-CH 500V 48A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 27.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock97,200	MOSFET (Metal Oxide)	500V	48A (Tc)	10V	4.5V @ 8mA	330nC @ 10V	9400pF @ 25V	±20V	-	400W (Tc)	90 mOhm @ 27.5A, 10V	-40°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXFH60N60X	IXYS	MOSFET N-CH 600V 60A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,736	MOSFET (Metal Oxide)	600V	60A (Tc)	10V	4.5V @ 8mA	143nC @ 10V	5800pF @ 25V	±30V	-	890W (Tc)	55 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
R6011ENJTL	Rohm Semiconductor	MOSFET N-CH 600V 11A LPT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 390 mOhm @ 3.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (D2PAK) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,032	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 1mA	32nC @ 10V	670pF @ 25V	±20V	-	40W (Tc)	390 mOhm @ 3.8A, 10V	150°C (TJ)	Surface Mount	LPTS (D2PAK)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDP15N40	Fairchild/ON Semiconductor	MOSFET N-CH 400V 15A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock10,056	MOSFET (Metal Oxide)	400V	15A (Tc)	10V	5V @ 250µA	36nC @ 10V	1750pF @ 25V	±30V	-	170W (Tc)	300 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
SIHH11N60EF-T1-GE3	Vishay Siliconix	MOSFET N-CH 600V 11A POWERPAK8X8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1078pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 357 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 8 x 8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock24,606	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	62nC @ 10V	1078pF @ 100V	±30V	-	114W (Tc)	357 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 8 x 8	8-PowerTDFN
BSC018N04LSGATMA1	Infineon Technologies	MOSFET N-CH 40V 100A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock52,626	MOSFET (Metal Oxide)	40V	30A (Ta), 100A (Tc)	4.5V, 10V	2V @ 85µA	150nC @ 10V	12000pF @ 20V	±20V	-	2.5W (Ta), 125W (Tc)	1.8 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPZ65R045C7XKSA1	Infineon Technologies	MOSFET N-CH 650V 46A TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.25mA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247 Package / Case: TO-247-4	Package: TO-247-4	Stock18,516	MOSFET (Metal Oxide)	650V	46A (Tc)	10V	4V @ 1.25mA	93nC @ 10V	4340pF @ 400V	±20V	-	227W (Tc)	45 mOhm @ 24.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247	TO-247-4
ZXMP3A16GTA	Diodes Incorporated	MOSFET P-CH 30V 4.6A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1022pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock1,164,408	MOSFET (Metal Oxide)	30V	5.4A (Ta)	4.5V, 10V	1V @ 250µA	29.6nC @ 10V	1022pF @ 15V	±20V	-	2W (Ta)	45 mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
BVSS84LT3G	onsemi	MOSFET P-CH 50V 130MA SOT-23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	130mA (Ta)	5V	2V @ 250µA	2.2 nC @ 10 V	36 pF @ 5 V	±20V	-	225mW (Ta)	10Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
STH2N120K5-2AG	STMicroelectronics	MOSFET N-CH 1200V 1.5A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock4,722	MOSFET (Metal Oxide)	1200 V	1.5A (Tc)	10V	4V @ 100µA	5.3 nC @ 10 V	124 pF @ 100 V	±30V	-	60W (Tc)	10Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	H2PAK-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSS138-7-F-79	Diodes Incorporated	DIODE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	200mA (Ta)	10V	1.5V @ 250µA	-	50 pF @ 10 V	±20V	-	300mW (Ta)	3.5Ohm @ 220mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
RJK6014DPP-00-T2	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB80P03P405ATMA2	Infineon Technologies	MOSFET_(20V 40V) PG-TO263-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 253µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	80A (Tc)	10V	4V @ 253µA	130 nC @ 10 V	10300 pF @ 25 V	±20V	-	137W (Tc)	4.7mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IGO60R070D1AUMA2	Infineon Technologies	GAN HV FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-20-85 Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)	Package: -	Stock2,400	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	1.6V @ 2.6mA	-	380 pF @ 400 V	-10V	-	125W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-20-85	20-PowerSOIC (0.433", 11.00mm Width)
FDZ7064S	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 30-BGA (3.5x4) Package / Case: 30-WFBGA	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	13.5A (Ta)	4.5V, 10V	3V @ 1mA	35 nC @ 5 V	2840 pF @ 15 V	±16V	-	2.2W (Ta)	7mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	30-BGA (3.5x4)	30-WFBGA
HUFA75639S3ST-F085A	onsemi	MOSFET N-CH 100V 56A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	56A (Tc)	10V	4V @ 250µA	130 nC @ 20 V	2000 pF @ 25 V	±20V	-	200W (Tc)	25mOhm @ 56A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PSMN4R3-40MLHX	Nexperia USA Inc.	MOSFET N-CH 40V 95A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 95A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Ta) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: -	Stock8,787	MOSFET (Metal Oxide)	40 V	95A (Ta)	4.5V, 10V	2.15V @ 1mA	43 nC @ 10 V	3007 pF @ 20 V	±20V	-	90W (Ta)	4.3mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
GSFA2072	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 72.00A, 20 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2655 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250mW (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 46A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock1,215	MOSFET (Metal Oxide)	200 V	72A (Tc)	10V	5V @ 250µA	36 nC @ 10 V	2655 pF @ 25 V	±20V	-	250mW (Tc)	24mOhm @ 46A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
RQA0004PXDQS-H1	Renesas Electronics Corporation	MOSFET N-CH 16V 300MA UPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16 V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 900mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 0 V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UPAK Package / Case: TO-243AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	16 V	300mA (Ta)	-	900mV @ 1mA	-	10 pF @ 0 V	±5V	-	3W (Ta)	-	150°C	Surface Mount	UPAK	TO-243AA
NTTFS024N06CTAG	onsemi	MOSFET N-CH 60V 7A/24A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	7A (Ta), 24A (Tc)	10V	4V @ 20µA	5.7 nC @ 10 V	333 pF @ 30 V	±20V	-	2.5W (Ta), 28W (Tc)	22.6mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN