Page 908 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFC3006EB
Infineon Technologies

MOSFET N-CH WAFER

Package: -

Stock4,240
NTLUS3A39PZCTBG
ON Semiconductor

MOSFET P-CH 20V 5.2A UDFN6

Package: 6-PowerUFDFN

Stock3,792
GP2M011A090NG
Global Power Technologies Group

MOSFET N-CH 900V 11A TO3PN

Package: TO-3P-3, SC-65-3

Stock4,912
BUK952R3-40E,127
NXP

MOSFET N-CH 40V 120A TO220AB

Package: TO-220-3

Stock6,448
SIE836DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 200V 18.3A POLARPAK

Package: 10-PolarPAK? (SH)

Stock7,456
IXTA62N25T
IXYS

MOSFET N-CH 250V 62A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,160
HUF75345S3S
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,120
IRF540L
Vishay Siliconix

MOSFET N-CH 100V 28A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,192
IPI65R110CFDXKSA1
Infineon Technologies

MOSFET N-CH 650V 31.2A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,240
IRF1503STRLPBF
Infineon Technologies

MOSFET N-CH 30V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,344
IRFI7440GPBF
Infineon Technologies

MOSFET N-CH 40V 95A

Package: TO-220-3 Full Pack

Stock4,928
SIHP12N60E-E3
Vishay Siliconix

MOSFET N-CH 600V 12A TO220AB

Package: TO-220-3 Full Pack

Stock2,000
TN0610N3-G-P013
Microchip Technology

MOSFET N-CH 100V 500MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock3,344
STH110N10F7-6
STMicroelectronics

MOSFET N-CH 100V 110A H2PAK-6

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock3,776
IXFJ20N85X
IXYS

MOSFET N-CH 850V 9.5A TO247-3

Package: TO-247-3

Stock6,656
IRFB41N15DPBF
Infineon Technologies

MOSFET N-CH 150V 41A TO-220AB

Package: TO-220-3

Stock15,084
IPA80R650CEXKSA2
Infineon Technologies

MOSFET N-CH 800V TO-220-3

Package: TO-220-3 Full Pack

Stock7,248
DMP1100UCB4-7
Diodes Incorporated

MOSFET P-CHA 12V 2.5A WLB0808

Package: 4-UFBGA, WLBGA

Stock4,464
PSMN4R3-100PS,127
Nexperia USA Inc.

MOSFET N-CH 100V 120A TO220AB

Package: TO-220-3

Stock44,496
STW60NM50N
STMicroelectronics

MOSFET N CH 500V 68A TO-247

Package: TO-247-3

Stock14,040

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFC3006EB	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,240	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTLUS3A39PZCTBG	ON Semiconductor	MOSFET P-CH 20V 5.2A UDFN6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 39 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (1.6x1.6) Package / Case: 6-PowerUFDFN	Package: 6-PowerUFDFN	Stock3,792	MOSFET (Metal Oxide)	20V	3.4A (Ta)	1.5V, 4.5V	1V @ 250µA	10.4nC @ 4.5V	920pF @ 15V	±8V	-	600mW (Ta)	39 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (1.6x1.6)	6-PowerUFDFN
GP2M011A090NG	Global Power Technologies Group	MOSFET N-CH 900V 11A TO3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 416W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock4,912	MOSFET (Metal Oxide)	900V	11A (Tc)	10V	5V @ 250µA	84nC @ 10V	3240pF @ 25V	±30V	-	416W (Tc)	900 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
BUK952R3-40E,127	NXP	MOSFET N-CH 40V 120A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 13160pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 293W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,448	MOSFET (Metal Oxide)	40V	120A (Tc)	5V, 10V	2.1V @ 1mA	87.8nC @ 5V	13160pF @ 25V	±10V	-	293W (Tc)	2.2 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIE836DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 200V 18.3A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (SH) Package / Case: 10-PolarPAK? (SH)	Package: 10-PolarPAK? (SH)	Stock7,456	MOSFET (Metal Oxide)	200V	18.3A (Tc)	10V	4.5V @ 250µA	41nC @ 10V	1200pF @ 100V	±30V	-	5.2W (Ta), 104W (Tc)	130 mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (SH)	10-PolarPAK? (SH)
IXTA62N25T	IXYS	MOSFET N-CH 250V 62A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,160	MOSFET (Metal Oxide)	250V	62A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF75345S3S	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 275nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 325W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,120	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	275nC @ 20V	4000pF @ 25V	±20V	-	325W (Tc)	7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF540L	Vishay Siliconix	MOSFET N-CH 100V 28A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,192	MOSFET (Metal Oxide)	100V	28A (Tc)	10V	4V @ 250µA	72nC @ 10V	1700pF @ 25V	±20V	-	-	77 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IPI65R110CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 31.2A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 277.8W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,240	MOSFET (Metal Oxide)	650V	31.2A (Tc)	10V	4.5V @ 1.3mA	118nC @ 10V	3240pF @ 100V	±20V	-	277.8W (Tc)	110 mOhm @ 12.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF1503STRLPBF	Infineon Technologies	MOSFET N-CH 30V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 140A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,344	MOSFET (Metal Oxide)	30V	75A (Tc)	10V	4V @ 250µA	200nC @ 10V	5730pF @ 25V	±20V	-	200W (Tc)	3.3 mOhm @ 140A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFI7440GPBF	Infineon Technologies	MOSFET N-CH 40V 95A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4549pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 57A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,928	MOSFET (Metal Oxide)	40V	95A (Tc)	10V	3.9V @ 100µA	132nC @ 10V	4549pF @ 25V	±20V	-	42W (Tc)	2.5 mOhm @ 57A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
SIHP12N60E-E3	Vishay Siliconix	MOSFET N-CH 600V 12A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,000	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	4V @ 250µA	58nC @ 10V	937pF @ 100V	±30V	-	147W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3 Full Pack
TN0610N3-G-P013	Microchip Technology	MOSFET N-CH 100V 500MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock3,344	MOSFET (Metal Oxide)	100V	500mA (Tj)	3V, 10V	2V @ 1mA	-	150pF @ 25V	±20V	-	1W (Tc)	1.5 Ohm @ 750mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
STH110N10F7-6	STMicroelectronics	MOSFET N-CH 100V 110A H2PAK-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5117pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock3,776	MOSFET (Metal Oxide)	100V	110A (Tc)	10V	4.5V @ 250µA	72nC @ 10V	5117pF @ 50V	±20V	-	150W (Tc)	6.5 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-7, D2Pak (6 Leads + Tab)
IXFJ20N85X	IXYS	MOSFET N-CH 850V 9.5A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFJ) Package / Case: TO-247-3	Package: TO-247-3	Stock6,656	MOSFET (Metal Oxide)	850V	9.5A (Tc)	10V	5.5V @ 2.5mA	63nC @ 10V	1660pF @ 25V	±30V	-	110W (Tc)	360 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFJ)	TO-247-3
IRFB41N15DPBF	Infineon Technologies	MOSFET N-CH 150V 41A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock15,084	MOSFET (Metal Oxide)	150V	41A (Tc)	10V	5.5V @ 250µA	110nC @ 10V	2520pF @ 25V	±30V	-	200W (Tc)	45 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPA80R650CEXKSA2	Infineon Technologies	MOSFET N-CH 800V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 470µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: - Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,248	MOSFET (Metal Oxide)	800V	8A (Ta)	10V	3.9V @ 470µA	45nC @ 10V	1100pF @ 100V	±20V	-	33W (Tc)	650 mOhm @ 5.1A, 10V	-40°C ~ 150°C (TJ)	-	TO-220-3F	TO-220-3 Full Pack
DMP1100UCB4-7	Diodes Incorporated	MOSFET P-CHA 12V 2.5A WLB0808 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.3V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 670mW (Ta) Rds On (Max) @ Id, Vgs: 83 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-WLB0808-4 Package / Case: 4-UFBGA, WLBGA	Package: 4-UFBGA, WLBGA	Stock4,464	MOSFET (Metal Oxide)	12V	2.5A (Ta)	1.3V, 4.5V	800mV @ 250µA	14nC @ 4.5V	820pF @ 6V	±8V	-	670mW (Ta)	83 mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-WLB0808-4	4-UFBGA, WLBGA
PSMN4R3-100PS,127	Nexperia USA Inc.	MOSFET N-CH 100V 120A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 338W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock44,496	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	4V @ 1mA	170nC @ 10V	9900pF @ 50V	±20V	-	338W (Tc)	4.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STW60NM50N	STMicroelectronics	MOSFET N CH 500V 68A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5790pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 43 mOhm @ 34A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock14,040	MOSFET (Metal Oxide)	500V	68A (Tc)	10V	4V @ 250µA	178nC @ 10V	5790pF @ 100V	±25V	-	446W (Tc)	43 mOhm @ 34A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
FDMS86150	Fairchild/ON Semiconductor	MOSFET N CH 100V 16A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4065pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 4.85 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,416	MOSFET (Metal Oxide)	100V	16A (Ta), 60A (Tc)	6V, 10V	4V @ 250µA	62nC @ 10V	4065pF @ 50V	±20V	-	2.7W (Ta), 156W (Tc)	4.85 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
KFJ4B01100L	Nuvoton Technology Corporation	TMOS FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 74mOhm @ 1.5A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 4-CSP (0.8x0.8) Package / Case: 4-XFLGA, CSP	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	2.2A (Ta)	1.5V, 4.5V	1V @ 1.2mA	7 nC @ 4.5 V	459 pF @ 10 V	±8V	-	360mW (Ta)	74mOhm @ 1.5A, 4.5V	150°C	Surface Mount	4-CSP (0.8x0.8)	4-XFLGA, CSP
AOTS21311C	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 5.9A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 5.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: -	Stock96,057	MOSFET (Metal Oxide)	30 V	5.9A (Ta)	4.5V, 10V	2.2V @ 250µA	26 nC @ 10 V	720 pF @ 15 V	±20V	-	2.5W (Ta)	45mOhm @ 5.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
2SK2788VYWS-E	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3J331R-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 4A SOT23F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	Package: -	Stock56,208	MOSFET (Metal Oxide)	20 V	4A (Ta)	1.5V, 4.5V	1V @ 1mA	10.4 nC @ 4.5 V	630 pF @ 10 V	±8V	-	1W (Ta)	55mOhm @ 3A, 4.5V	150°C (TJ)	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
IPDQ60R017S7XTMA1	Infineon Technologies	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 1.89mA Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	30A (Tc)	12V	4.5V @ 1.89mA	196 nC @ 12 V	7370 pF @ 300 V	±20V	-	500W (Tc)	17mOhm @ 29A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
SCT3030ALHRC11	Rohm Semiconductor	SICFET N-CH 650V 70A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 262W Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: -	Stock1,404	SiCFET (Silicon Carbide)	650 V	70A (Tc)	18V	5.6V @ 13.3mA	104 nC @ 18 V	1526 pF @ 500 V	+22V, -4V	-	262W	39mOhm @ 27A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
IRF626	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 275 V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	275 V	3.8A (Tc)	10V	4V @ 250µA	22 nC @ 10 V	340 pF @ 25 V	±20V	-	40W (Tc)	1.1Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3