Page 911 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI100N06S3-04
Infineon Technologies

MOSFET N-CH 55V 100A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,832
JANTXV2N6784U
Microsemi Corporation

MOSFET N-CH

Package: 18-BQFN Exposed Pad

Stock4,608
IXTT1N100
IXYS

MOSFET N-CH 1000V 1.5A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,424
NTB25P06
ON Semiconductor

MOSFET P-CH 60V 27.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,000
IPI147N12N3GAKSA1
Infineon Technologies

MOSFET N-CH 120V 56A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,432
FQD3P50TM_AM002BLT
Fairchild/ON Semiconductor

P-CH/500V/2.1A/4.9OHM

Package: -

Stock3,424
TK6P60W,RVQ
Toshiba Semiconductor and Storage

MOSFET N CH 600V 6.2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,240
TK35E08N1,S1X
Toshiba Semiconductor and Storage

MOSFET N-CH 80V 55A TO-220

Package: TO-220-3

Stock6,224
NTR3C21NZT3G
ON Semiconductor

MOSFET N-CH 20V 3.6A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock5,776
IXFK80N65X2
IXYS

MOSFET N-CH 650V 80A TO-264

Package: TO-264-3, TO-264AA

Stock6,288
IRL540PBF
Vishay Siliconix

MOSFET N-CH 100V 28A TO-220AB

Package: TO-220-3

Stock60,000
GA10SICP12-263
GeneSiC Semiconductor

TRANS SJT 1200V 25A TO263-7

Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Stock8,640
IPP65R074C6XKSA1
Infineon Technologies

MOSFET N-CH 650V 57.7A TO220

Package: TO-220-3

Stock7,404
IRF2804SPBF
Infineon Technologies

MOSFET N-CH 40V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock117,264
FDS6375
Fairchild/ON Semiconductor

MOSFET P-CH 20V 8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock987,192
NVMFS5C426NWFET1G
onsemi

T6-40V N 1.3 MOHMS SL

Package: -

Request a Quote
IRFR120TRRPBF-BE3
Vishay Siliconix

MOSFET N-CH 100V 7.7A DPAK

Package: -

Stock3,285
GSFT1060
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 60A, 100V,

Package: -

Stock4,800
SIHFL210TR-GE3
Vishay Siliconix

MOSFET N-CHANNEL 200V

Package: -

Stock1,134
PJP2NA90_T0_00001
Panjit International Inc.

900V N-CHANNEL MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI100N06S3-04	Infineon Technologies	MOSFET N-CH 55V 100A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 314nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14230pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,832	MOSFET (Metal Oxide)	55V	100A (Tc)	10V	4V @ 150µA	314nC @ 10V	14230pF @ 25V	±20V	-	214W (Tc)	4.4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
JANTXV2N6784U	Microsemi Corporation	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-BQFN Exposed Pad	Package: 18-BQFN Exposed Pad	Stock4,608	MOSFET (Metal Oxide)	200V	2.25A (Tc)	10V	4V @ 250µA	8.6nC @ 10V	-	±20V	-	800mW (Ta), 15W (Tc)	1.6 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	18-ULCC (9.14x7.49)	18-BQFN Exposed Pad
IXTT1N100	IXYS	MOSFET N-CH 1000V 1.5A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 11 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,424	MOSFET (Metal Oxide)	1000V	1.5A (Tc)	10V	4.5V @ 25µA	23nC @ 10V	480pF @ 25V	±20V	-	60W (Tc)	11 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
NTB25P06	ON Semiconductor	MOSFET P-CH 60V 27.5A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 120W (Tj) Rds On (Max) @ Id, Vgs: 82 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,000	MOSFET (Metal Oxide)	60V	27.5A (Ta)	10V	4V @ 250µA	50nC @ 10V	1680pF @ 25V	±15V	-	120W (Tj)	82 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPI147N12N3GAKSA1	Infineon Technologies	MOSFET N-CH 120V 56A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 56A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 61µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 60V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 56A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,432	MOSFET (Metal Oxide)	120V	56A (Ta)	10V	4V @ 61µA	49nC @ 10V	3220pF @ 60V	±20V	-	107W (Tc)	14.7 mOhm @ 56A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
FQD3P50TM_AM002BLT	Fairchild/ON Semiconductor	P-CH/500V/2.1A/4.9OHM FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,424	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK6P60W,RVQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 6.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 310µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 820 mOhm @ 3.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,240	MOSFET (Metal Oxide)	600V	6.2A (Ta)	10V	3.7V @ 310µA	12nC @ 10V	390pF @ 300V	±30V	Super Junction	60W (Tc)	820 mOhm @ 3.1A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
TK35E08N1,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 80V 55A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 72W (Tc) Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 17.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,224	MOSFET (Metal Oxide)	80V	55A (Tc)	10V	4V @ 300µA	25nC @ 10V	1700pF @ 40V	±20V	-	72W (Tc)	12.2 mOhm @ 17.5A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
NTR3C21NZT3G	ON Semiconductor	MOSFET N-CH 20V 3.6A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 16V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,776	MOSFET (Metal Oxide)	20V	3.6A (Ta)	1.8V, 4.5V	1V @ 250µA	17.8nC @ 4.5V	1540pF @ 16V	±8V	-	470mW (Ta)	24 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IXFK80N65X2	IXYS	MOSFET N-CH 650V 80A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8245pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,288	MOSFET (Metal Oxide)	650V	80A (Tc)	10V	5.5V @ 4mA	143nC @ 10V	8245pF @ 25V	±30V	-	890W (Tc)	40 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
IRL540PBF	Vishay Siliconix	MOSFET N-CH 100V 28A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock60,000	MOSFET (Metal Oxide)	100V	28A (Tc)	4V, 5V	2V @ 250µA	64nC @ 5V	2200pF @ 25V	±10V	-	150W (Tc)	77 mOhm @ 17A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
GA10SICP12-263	GeneSiC Semiconductor	TRANS SJT 1200V 25A TO263-7 FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V Vgs (Max): - FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Stock8,640	SiC (Silicon Carbide Junction Transistor)	1200V	25A (Tc)	-	-	-	1403pF @ 800V	-	-	170W (Tc)	100 mOhm @ 10A	175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
IPP65R074C6XKSA1	Infineon Technologies	MOSFET N-CH 650V 57.7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 57.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.4mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480.8W (Tc) Rds On (Max) @ Id, Vgs: 74 mOhm @ 13.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock7,404	MOSFET (Metal Oxide)	650V	57.7A (Tc)	10V	3.5V @ 1.4mA	17nC @ 10V	3020pF @ 100V	±20V	-	480.8W (Tc)	74 mOhm @ 13.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IRF2804SPBF	Infineon Technologies	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock117,264	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 250µA	240nC @ 10V	6450pF @ 25V	±20V	-	300W (Tc)	2 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDS6375	Fairchild/ON Semiconductor	MOSFET P-CH 20V 8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2694pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 8A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock987,192	MOSFET (Metal Oxide)	20V	8A (Ta)	2.5V, 4.5V	1.5V @ 250µA	36nC @ 4.5V	2694pF @ 10V	±8V	-	2.5W (Ta)	24 mOhm @ 8A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NVMFS5C426NWFET1G	onsemi	T6-40V N 1.3 MOHMS SL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	41A (Ta), 235A (Tc)	10V	3.5V @ 250µA	65 nC @ 10 V	4300 pF @ 25 V	±20V	-	3.8W (Ta), 128W (Tc)	1.3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads
IRFR120TRRPBF-BE3	Vishay Siliconix	MOSFET N-CH 100V 7.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock3,285	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	-	4V @ 250µA	16 nC @ 10 V	360 pF @ 25 V	±20V	-	2.5W (Ta), 42W (Tc)	270mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
GSFT1060	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 60A, 100V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 113W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock4,800	MOSFET (Metal Oxide)	100 V	60A (Tc)	6V, 10V	4V @ 250µA	70 nC @ 10 V	3300 pF @ 50 V	±20V	-	113W (Tc)	18mOhm @ 25A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHFL210TR-GE3	Vishay Siliconix	MOSFET N-CHANNEL 200V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 960mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock1,134	MOSFET (Metal Oxide)	200 V	960mA (Tc)	10V	4V @ 250µA	8.2 nC @ 10 V	140 pF @ 25 V	±20V	-	2W (Ta), 3.1W (Tc)	1.5Ohm @ 580mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
PJP2NA90_T0_00001	Panjit International Inc.	900V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 6.4Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	900 V	2A (Ta)	10V	4V @ 250µA	11.1 nC @ 10 V	396 pF @ 25 V	±30V	-	80W (Tc)	6.4Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SFS9Z24	Fairchild Semiconductor	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	7.5A (Tc)	10V	4V @ 250µA	19 nC @ 10 V	600 pF @ 25 V	±30V	-	29W (Tc)	280mOhm @ 3.8A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
CES2302-ML	MOSLEADER	Single N 20V 3A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVD2955T4G	onsemi	MOSFET P-CH 60V 12A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	12A (Ta)	10V	4V @ 250µA	30 nC @ 10 V	750 pF @ 25 V	±20V	-	55W (Ta)	180mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
3SK317ZR-TL-E	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOSX32128	Alpha & Omega Semiconductor Inc.	SINGLE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	3.2A (Ta)	1.8V, 4.5V	1.3V @ 250µA	6 nC @ 4.5 V	190 pF @ 10 V	±8V	-	1.1W (Ta)	75mOhm @ 3.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
NVHL082N65S3F	onsemi	MOSFET N-CH 650V 40A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	40A (Tc)	10V	5V @ 4mA	81 nC @ 10 V	3410 pF @ 400 V	±30V	-	313W (Tc)	82mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPP65R110CFD7XKSA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 480µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Stock1,482	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	4.5V @ 480µA	41 nC @ 10 V	1942 pF @ 400 V	±20V	-	114W (Tc)	110mOhm @ 9.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
AO3401A-ML	MOSLEADER	30V 4.2A 1.4W P Channel SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-