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Infineon Technologies |
MOSFET P-CH 20V 2.5A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 2.5W (Tc)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,872 |
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MOSFET (Metal Oxide) | 20V | 2.5A (Tc) | 4.5V, 10V | 3V @ 250µA | 15nC @ 10V | 270pF @ 20V | ±20V | - | 1.6W (Ta), 2.5W (Tc) | 250 mOhm @ 1A, 10V | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH DFN 3X3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1086pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 23W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3x3)
- Package / Case: 8-VDFN Exposed Pad
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Package: 8-VDFN Exposed Pad |
Stock120,000 |
|
MOSFET (Metal Oxide) | 30V | 24A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 22nC @ 10V | 1086pF @ 15V | ±20V | - | 3.1W (Ta), 23W (Tc) | 8.8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-VDFN Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 500V 1.2A TO220
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock7,936 |
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- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 1.5A TP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 20W (Tc)
- Rds On (Max) @ Id, Vgs: 8.1 Ohm @ 800mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TP
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock4,544 |
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MOSFET (Metal Oxide) | 600V | 1.5A (Ta) | 10V | - | 6.3nC @ 10V | 130pF @ 30V | ±30V | - | 1W (Ta), 20W (Tc) | 8.1 Ohm @ 800mA, 10V | 150°C (TJ) | Through Hole | TP | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 500V 16A TO-220FI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 46.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FI(LS)
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock12,024 |
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MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | - | 46.6nC @ 10V | 1200pF @ 30V | ±30V | - | 2W (Ta), 40W (Tc) | 430 mOhm @ 8A, 10V | 150°C (TJ) | Through Hole | TO-220FI(LS) | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 25V 35A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251AA
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,008 |
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MOSFET (Metal Oxide) | 25V | 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 25nC @ 10V | 1220pF @ 13V | ±20V | - | 50W (Tc) | 11 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 40V 42A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 42A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock105,300 |
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MOSFET (Metal Oxide) | 40V | 42A (Tc) | 10V | 4V @ 250µA | 89nC @ 10V | 2950pF @ 25V | ±20V | - | 140W (Tc) | 5.5 mOhm @ 42A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 20V 20A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 10V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock540,972 |
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MOSFET (Metal Oxide) | 20V | 20A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 95nC @ 10V | 3700pF @ 10V | ±16V | - | 2.5W (Ta), 5.7W (Tc) | 6 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 522pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock24,000 |
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MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 5V @ 250µA | 15nC @ 10V | 522pF @ 100V | ±30V | - | 35W (Tc) | 2.1 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 23.8A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 11.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock46,812 |
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MOSFET (Metal Oxide) | 600V | 23.8A (Tc) | 10V | 3.5V @ 750µA | 75nC @ 10V | 1660pF @ 100V | ±20V | - | 176W (Tc) | 160 mOhm @ 11.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET P-CH 40V 10.3A PWRDI3333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3426pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock2,656 |
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MOSFET (Metal Oxide) | 40V | 10.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 68.6nC @ 10V | 3426pF @ 20V | ±20V | - | 1W (Ta) | 13 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 63.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 87W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 30A, 4.5V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock16,980 |
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MOSFET (Metal Oxide) | 40V | 100A | 4.5V, 10V | 2.4V @ 500µA | 63.4nC @ 10V | 4670pF @ 20V | ±20V | - | 87W (Tc) | 3.8 mOhm @ 30A, 4.5V | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Rohm Semiconductor |
MOSFET P-CH 30V 3A TSMT
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 91 mOhm @ 3A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SC-74, SOT-457
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Package: SC-74, SOT-457 |
Stock36,360 |
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MOSFET (Metal Oxide) | 30V | - | - | 2.5V @ 1mA | 5.4nC @ 10V | 240pF @ 15V | - | - | - | 91 mOhm @ 3A, 10V | - | Surface Mount | TSMT6 (SC-95) | SC-74, SOT-457 |
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STMicroelectronics |
MOSFET N-CH 25V 21A POLARPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta)
- Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 10.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PolarPak?
- Package / Case: PolarPak?
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Package: PolarPak? |
Stock27,612 |
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MOSFET (Metal Oxide) | 25V | 21A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 9.5nC @ 4.5V | 1425pF @ 25V | ±16V | - | 5.2W (Ta) | 7.3 mOhm @ 10.5A, 10V | 150°C (TJ) | Surface Mount | PolarPak? | PolarPak? |
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Nexperia USA Inc. |
20 V, N-CHANNEL TRENCH MOSFET
- FET Type: N-Channel
- Technology: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 600mA
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
- Vgs (Max): -
- FET Feature: Standard
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006-3
- Package / Case: SC-101, SOT-883
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Package: SC-101, SOT-883 |
Stock91,098 |
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- | 20V | 600mA | - | 950mV @ 250µA | 0.7nC @ 4.5V | 21.3pF @ 10V | - | Standard | - | 620 mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
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Vishay Siliconix |
MOSFET N-CH 30V 35A PPAK 1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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Package: PowerPAK? 1212-8 |
Stock1,745,832 |
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MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 32nC @ 10V | 1230pF @ 15V | ±20V | - | 3.7W (Ta), 39W (Tc) | 7.5 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 4.1A 6-TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock695,616 |
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MOSFET (Metal Oxide) | 60V | 4.1A (Tc) | 4.5V, 10V | 3V @ 250µA | 11nC @ 10V | 350pF @ 30V | ±20V | - | 2W (Ta), 3.3W (Tc) | 100 mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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onsemi |
MOSFET N-CH 600V TO-220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 20.6A (Tc) | - | 3.5V @ 250µA | 82 nC @ 10 V | 3175 pF @ 25 V | - | - | 39W (Tc) | 190mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 20 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 27.7W (Tc)
- Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 75 nC @ 10 V | 3750 pF @ 20 V | +20V, -16V | - | 27.7W (Tc) | 2.65mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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MOSLEADER |
Single-P -30V -3A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Infineon Technologies |
SIC DISCRETE
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 2000 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Vgs(th) (Max) @ Id: 5.5V @ 7.7mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): +20V, -7V
- FET Feature: -
- Power Dissipation (Max): 267W (Tc)
- Rds On (Max) @ Id, Vgs: 98mOhm @ 13A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-U04
- Package / Case: TO-247-4
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Package: - |
Stock267 |
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SiC (Silicon Carbide Junction Transistor) | 2000 V | 34A (Tc) | 15V, 18V | 5.5V @ 7.7mA | 64 nC @ 18 V | - | +20V, -7V | - | 267W (Tc) | 98mOhm @ 13A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-U04 | TO-247-4 |
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onsemi |
MOSFET N-CH 500V 13.5A TO3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 218W (Tc)
- Rds On (Max) @ Id, Vgs: 480mOhm @ 6.75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 500 V | 13.5A (Tc) | 10V | 4V @ 250µA | 56 nC @ 10 V | 2055 pF @ 25 V | ±30V | - | 218W (Tc) | 480mOhm @ 6.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Micro Commercial Co |
Interface
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 120A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 116W
- Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 120A | 10V | 2.5V @ 250µA | 65 nC @ 10 V | 4400 pF @ 50 V | ±20V | - | 116W | 4mOhm @ 60A, 10V | -55°C ~ 150°C | Surface Mount | DFN5060 | 8-PowerTDFN |
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Rohm Semiconductor |
NCH 600V 86A, TO-247, POWER MOSF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Vgs(th) (Max) @ Id: 6V @ 4.6mA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 781W (Tc)
- Rds On (Max) @ Id, Vgs: 44mOhm @ 17A, 12V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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Package: - |
Stock1,704 |
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MOSFET (Metal Oxide) | 600 V | 86A (Tc) | 10V, 12V | 6V @ 4.6mA | 110 nC @ 10 V | 5100 pF @ 100 V | ±30V | - | 781W (Tc) | 44mOhm @ 17A, 12V | 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -6.50A, -2
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Tc)
- Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6L
- Package / Case: SOT-23-6
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Package: - |
Stock26,928 |
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MOSFET (Metal Oxide) | 20 V | 6.5A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 29 nC @ 4.5 V | 2430 pF @ 15 V | ±10V | - | 1.56W (Tc) | 23mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6L | SOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 12V 9.1A 6UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42.6 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 4 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type E)
- Package / Case: 6-PowerUDFN
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Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | 12 V | 9.1A (Ta) | 1.2V, 4.5V | 800mV @ 250µA | 42.6 nC @ 5 V | 2953 pF @ 4 V | ±8V | - | 660mW (Ta) | 16mOhm @ 8.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-PowerUDFN |
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Central Semiconductor Corp |
MOSFET P-CH 40V 6A SOT-89
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
- Vgs (Max): 20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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Package: - |
Stock26,385 |
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MOSFET (Metal Oxide) | 40 V | 6A (Ta) | 4.5V, 10V | 3V @ 250µA | 6.5 nC @ 4.5 V | 750 pF @ 25 V | 20V | - | 1.2W (Ta) | 65mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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