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Infineon Technologies |
MOSFET N-CH 40V 104A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock35,856 |
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MOSFET (Metal Oxide) | 40V | 104A (Tc) | 4.5V, 10V | 1V @ 250µA | 68nC @ 4.5V | 3445pF @ 25V | ±16V | - | 167W (Tc) | 8 mOhm @ 62A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 60V 1.17A SOT-223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock5,952 |
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MOSFET (Metal Oxide) | 60V | 1.17A (Ta) | 4.5V, 10V | 2V @ 160µA | 7.8nC @ 10V | 160pF @ 25V | ±20V | - | 1.8W (Ta) | 800 mOhm @ 1.17A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET P-CH 40V 19A TP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 23W (Tc)
- Rds On (Max) @ Id, Vgs: 59 mOhm @ 9.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TP
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock5,856 |
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MOSFET (Metal Oxide) | 40V | 19A (Ta) | 4.5V, 10V | - | 12nC @ 10V | 590pF @ 20V | ±20V | - | 1W (Ta), 23W (Tc) | 59 mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TP | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 60V 18A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,408 |
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MOSFET (Metal Oxide) | 60V | 18A (Ta) | 10V | 4V @ 250µA | 30nC @ 10V | 710pF @ 25V | ±20V | - | 2.1W (Ta), 55W (Tj) | 60 mOhm @ 9A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 800V 5.9A TO-3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.95A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: SC-94
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Package: SC-94 |
Stock9,000 |
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MOSFET (Metal Oxide) | 800V | 5.9A (Tc) | 10V | 5V @ 250µA | 57nC @ 10V | 2350pF @ 25V | ±30V | - | 107W (Tc) | 1.2 Ohm @ 2.95A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | SC-94 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 200V 19A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 139W (Tc)
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 9.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,280 |
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MOSFET (Metal Oxide) | 200V | 19A (Tc) | 10V | 4V @ 250µA | 53nC @ 10V | 1080pF @ 25V | ±30V | - | 139W (Tc) | 170 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET P-CH 20V 4.1A SC75-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC75-6 FLMP
- Package / Case: SC75-6 FLMP
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Package: SC75-6 FLMP |
Stock198,000 |
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MOSFET (Metal Oxide) | 20V | 4.1A (Ta) | 1.8V, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 780pF @ 10V | ±8V | - | 1.6W (Ta) | 60 mOhm @ 4.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC75-6 FLMP | SC75-6 FLMP |
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Vishay Siliconix |
MOSFET N-CH 200V 5.2A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2,592 |
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MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | ±20V | - | - | 800 mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 223µA
- Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11550pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock4,240 |
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MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4V @ 223µA | 167nC @ 10V | 11550pF @ 25V | ±20V | - | 278W (Tc) | 2.8 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO251-3-11
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 47W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock4,896 |
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MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 18nC @ 10V | 1900pF @ 15V | ±20V | - | 47W (Tc) | 7.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 600V 90MA SOT89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 131pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT89
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock3,440 |
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MOSFET (Metal Oxide) | 600V | 90mA (Ta) | 4.5V, 10V | 2.3V @ 94µA | 5.8nC @ 10V | 131pF @ 25V | ±20V | - | 1W (Ta) | 45 Ohm @ 90mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89 | TO-243AA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 19A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 9.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock3,200 |
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MOSFET (Metal Oxide) | 450V | 19A (Ta) | 10V | 4V @ 1mA | 45nC @ 10V | 2600pF @ 25V | ±30V | - | 50W (Tc) | 250 mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Sanken |
MOSFET N-CH 900V TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock3,808 |
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MOSFET (Metal Oxide) | 900V | 3A (Ta) | 10V | 4V @ 1mA | - | 600pF @ 10V | ±30V | - | 30W (Tc) | 5 Ohm @ 1.5A, 10V | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Microsemi Corporation |
MOSFET N-CH 1000V 28A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 690W (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 [L]
- Package / Case: TO-264-3, TO-264AA
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Package: TO-264-3, TO-264AA |
Stock7,536 |
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MOSFET (Metal Oxide) | 1000V | 28A (Tc) | 10V | 5V @ 2.5mA | 186nC @ 10V | 5185pF @ 25V | ±30V | - | 690W (Tc) | 350 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 40V 80A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 94W (Tj)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,312 |
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MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 250µA | 56nC @ 10V | 2980pF @ 25V | ±20V | - | 94W (Tj) | 3.5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N CH 150V 5.4A POWER 33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power33
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock4,144 |
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MOSFET (Metal Oxide) | 150V | 5.4A (Ta), 16A (Tc) | 6V, 10V | 4V @ 250µA | 21nC @ 10V | 1330pF @ 75V | ±20V | - | 2.3W (Ta), 54W (Tc) | 34 mOhm @ 5.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET P-CH 12V 2A X2-DFN1010-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 5V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 480mW (Ta)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN1010-3
- Package / Case: 3-XFDFN
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Package: 3-XFDFN |
Stock3,760 |
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MOSFET (Metal Oxide) | 12V | 2A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 5.8nC @ 4.5V | 514pF @ 5V | ±8V | - | 480mW (Ta) | 100 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1010-3 | 3-XFDFN |
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Vishay Siliconix |
MOSFET N-CH 25V 60A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6150pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock29,232 |
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MOSFET (Metal Oxide) | 25V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 135nC @ 10V | 6150pF @ 10V | ±20V | - | 6.25W (Ta), 104W (Tc) | 1.7 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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Infineon Technologies |
MOSFET N-CH 40V 56A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 98W (Tc)
- Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 56A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock72,600 |
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MOSFET (Metal Oxide) | 40V | 56A (Tc) | 6V, 10V | 3.9V @ 100µA | 130nC @ 10V | 3150pF @ 25V | ±20V | - | 98W (Tc) | 3.9 mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 1200V 6A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock9,744 |
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MOSFET (Metal Oxide) | 1200V | 6A (Tc) | 10V | 5V @ 100µA | 34nC @ 10V | 1050pF @ 100V | ±30V | - | 150W (Tc) | 2.4 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Renesas Electronics Corporation |
MOSFET N-CH 25V 64A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 10 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 32A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3Z)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 25 V | 64A (Tc) | - | 3V @ 1mA | 88 nC @ 10 V | 4770 pF @ 10 V | - | - | - | 3.8mOhm @ 32A, 10V | - | Surface Mount | TO-252 (MP-3Z) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Harris Corporation |
28A, 100V, 0.077 OHM, N-CHANNEL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262 (I2PAK)
- Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 28A (Tc) | 10V | 4V @ 250µA | 59 nC @ 10 V | 1450 pF @ 25 V | ±20V | - | 150W (Tc) | 77mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 (I2PAK) | TO-262-3 Long Leads, I2PAK, TO-262AA |
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Micro Commercial Co |
MOSFET N-CH 60V 150A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 187W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 150A (Tc) | 10V | 4V @ 250µA | 69 nC @ 10 V | 3800 pF @ 30 V | ±20V | - | 187W (Tc) | 5.5mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Venkel |
MOSFET Single,SOT-23,100V,170mA,
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236-3, SC-59, SOT-23-3
- Package / Case: -
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 170mA (Ta) | 4.5V, 10V | - | 1.8 nC @ 10 V | 45 pF @ 25 V | ±20V | - | 500mW (Ta) | 6Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - |
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Harris Corporation |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 275 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 275 V | 13A (Tc) | 10V | 4V @ 250µA | 59 nC @ 10 V | 1300 pF @ 25 V | ±20V | - | 125W (Tc) | 340mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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onsemi |
MOSFET N-CH 100V 15UA SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 225mW (Ta)
- Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 170mA (Tj) | 10V | 2.6V @ 1mA | - | 20 pF @ 25 V | ±20V | - | 225mW (Ta) | 6Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
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IXYS |
MOSFET ULTRA X4 200V 60A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXFH)
- Package / Case: TO-247-3
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Package: - |
Stock432 |
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MOSFET (Metal Oxide) | 200 V | 60A (Tc) | 10V | 4.5V @ 250µA | 33 nC @ 10 V | 2450 pF @ 25 V | ±20V | - | 250W (Tc) | 21mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXFH) | TO-247-3 |
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onsemi |
T6 40V N-CH LL IN LFPAK33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
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Package: - |
Stock8,967 |
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MOSFET (Metal Oxide) | 40 V | 19A (Ta), 75A (Tc) | 4.5V, 10V | 2V @ 40µA | 23.1 nC @ 10 V | 1300 pF @ 25 V | ±20V | - | 3.1W (Ta), 50W (Tc) | 4.8mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | SOT-1205, 8-LFPAK56 |
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