Page 934 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPB25N06S3L-22
Infineon Technologies

MOSFET N-CH 55V 25A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock103,464
SI4435DYPBF
Infineon Technologies

MOSFET P-CH 30V 8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock38,100
DMG8880LSS-13
Diodes Incorporated

MOSFET N-CH 30V 11.6A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock775,872
NTTFS4943NTAG
ON Semiconductor

MOSFET N-CH 30V 8A 8WDFN

Package: 8-PowerWDFN

Stock2,560
IRF740ASTRL
Vishay Siliconix

MOSFET N-CH 400V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,640
STD30NF06
STMicroelectronics

MOSFET N-CH 60V 28A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock846,132
SPW15N60CFDFKSA1
Infineon Technologies

MOSFET N-CH 650V 13.4A TO-247

Package: TO-247-3

Stock2,944
IXFN34N80
IXYS

MOSFET N-CH 800V 34A SOT-227B

Package: SOT-227-4, miniBLOC

Stock4,528
FCP190N65S3
Fairchild/ON Semiconductor

SUPERFET3 650V 190 MOHM, TO220F

Package: -

Stock7,968
FCPF190N65S3L1
Fairchild/ON Semiconductor

SUPERFET3 650V 190 MOHM, TO220F

Package: -

Stock5,648
AON7450
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 21A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock5,168
2SK536-TB-E
ON Semiconductor

MOSFET N-CH 50V 0.1A

Package: TO-236-3, SC-59, SOT-23-3

Stock2,945,832
BSZ042N04NSGATMA1
Infineon Technologies

MOSFET N-CH 40V 40A TSDSON-8

Package: 8-PowerVDFN

Stock5,632
FDMA8884
Fairchild/ON Semiconductor

MOSFET N-CH 30V 6.5A 6-MLP 2X2

Package: 6-VDFN Exposed Pad

Stock2,160
IPP600N25N3 G
Infineon Technologies

MOSFET N-CH 250V 25A TO220-3

Package: TO-220-3

Stock390,000
FDS4675_F085
Fairchild/ON Semiconductor

MOSFET P-CH 40V 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock20,190
STP40NF10L
STMicroelectronics

MOSFET N-CH 100V 40A TO-220

Package: TO-220-3

Stock710,016
STP4NK60Z
STMicroelectronics

MOSFET N-CH 600V 4A TO-220

Package: TO-220-3

Stock713,412
AM2334NE-T1-PF-ML
MOSLEADER

Single N 30V 3.5A SOT-23

Package: -

Request a Quote
SCT3080ALHRC11
Rohm Semiconductor

SICFET N-CH 650V 30A TO247N

Package: -

Stock1,362

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPB25N06S3L-22	Infineon Technologies	MOSFET N-CH 55V 25A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 21.3 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock103,464	MOSFET (Metal Oxide)	55V	25A (Tc)	5V, 10V	2.2V @ 20µA	47nC @ 10V	2260pF @ 25V	±16V	-	50W (Tc)	21.3 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4435DYPBF	Infineon Technologies	MOSFET P-CH 30V 8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock38,100	MOSFET (Metal Oxide)	30V	8A (Tc)	4.5V, 10V	1V @ 250µA	60nC @ 10V	2320pF @ 15V	±20V	-	2.5W (Ta)	20 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMG8880LSS-13	Diodes Incorporated	MOSFET N-CH 30V 11.6A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1289pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.43W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock775,872	MOSFET (Metal Oxide)	30V	11.6A (Ta)	4.5V, 10V	2V @ 250µA	27.6nC @ 10V	1289pF @ 15V	±20V	-	1.43W (Ta)	10 mOhm @ 11.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
NTTFS4943NTAG	ON Semiconductor	MOSFET N-CH 30V 8A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1386pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 840mW (Ta), 22.3W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,560	MOSFET (Metal Oxide)	30V	8A (Ta), 41A (Tc)	4.5V, 10V	2.2V @ 250µA	20.4nC @ 10V	1386pF @ 15V	±20V	-	840mW (Ta), 22.3W (Tc)	7.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
IRF740ASTRL	Vishay Siliconix	MOSFET N-CH 400V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,640	MOSFET (Metal Oxide)	400V	10A (Tc)	10V	4V @ 250µA	36nC @ 10V	1030pF @ 25V	±30V	-	3.1W (Ta), 125W (Tc)	550 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD30NF06	STMicroelectronics	MOSFET N-CH 60V 28A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock846,132	MOSFET (Metal Oxide)	60V	28A (Tc)	10V	4V @ 250µA	58nC @ 10V	1750pF @ 25V	±20V	-	70W (Tc)	28 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SPW15N60CFDFKSA1	Infineon Technologies	MOSFET N-CH 650V 13.4A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 9.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock2,944	MOSFET (Metal Oxide)	650V	13.4A (Tc)	10V	5V @ 750µA	84nC @ 10V	1820pF @ 25V	±20V	-	156W (Tc)	330 mOhm @ 9.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IXFN34N80	IXYS	MOSFET N-CH 800V 34A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 34A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,528	MOSFET (Metal Oxide)	800V	34A	10V	5V @ 8mA	270nC @ 10V	7500pF @ 25V	±20V	-	600W (Tc)	240 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
FCP190N65S3	Fairchild/ON Semiconductor	SUPERFET3 650V 190 MOHM, TO220F FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,968	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCPF190N65S3L1	Fairchild/ON Semiconductor	SUPERFET3 650V 190 MOHM, TO220F FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,648	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AON7450	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 21A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 48 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3x3) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock5,168	MOSFET (Metal Oxide)	100V	5.6A (Ta), 21A (Tc)	8V, 10V	4.1V @ 250µA	20nC @ 10V	1090pF @ 50V	±25V	-	3.1W (Ta), 43W (Tc)	48 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3x3)	8-PowerSMD, Flat Leads
2SK536-TB-E	ON Semiconductor	MOSFET N-CH 50V 0.1A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 10V Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-59 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,945,832	MOSFET (Metal Oxide)	50V	100mA (Ta)	10V	-	-	15pF @ 10V	±12V	-	200mW (Ta)	20 Ohm @ 10mA, 10V	125°C (TJ)	Surface Mount	SC-59	TO-236-3, SC-59, SOT-23-3
BSZ042N04NSGATMA1	Infineon Technologies	MOSFET N-CH 40V 40A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,632	MOSFET (Metal Oxide)	40V	40A (Tc)	10V	4V @ 36µA	46nC @ 10V	3700pF @ 20V	±20V	-	2.1W (Ta), 69W (Tc)	4.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerVDFN
FDMA8884	Fairchild/ON Semiconductor	MOSFET N-CH 30V 6.5A 6-MLP 2X2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock2,160	MOSFET (Metal Oxide)	30V	6.5A (Ta), 8A (Tc)	4.5V, 10V	3V @ 250µA	7.5nC @ 10V	450pF @ 15V	±20V	-	1.9W (Ta)	23 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
IPP600N25N3 G	Infineon Technologies	MOSFET N-CH 250V 25A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	250V	25A (Tc)	10V	4V @ 90µA	29nC @ 10V	2350pF @ 100V	±20V	-	136W (Tc)	60 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
FDS4675_F085	Fairchild/ON Semiconductor	MOSFET P-CH 40V 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock20,190	MOSFET (Metal Oxide)	40V	11A (Ta)	4.5V, 10V	3V @ 250µA	56nC @ 4.5V	4350pF @ 20V	±20V	-	2.4W (Ta)	13 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
STP40NF10L	STMicroelectronics	MOSFET N-CH 100V 40A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±17V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 20A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock710,016	MOSFET (Metal Oxide)	100V	40A (Tc)	5V, 10V	2.5V @ 250µA	64nC @ 5V	2300pF @ 25V	±17V	-	150W (Tc)	33 mOhm @ 20A, 10V	175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP4NK60Z	STMicroelectronics	MOSFET N-CH 600V 4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock713,412	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	4.5V @ 50µA	26nC @ 10V	510pF @ 25V	±30V	-	70W (Tc)	2 Ohm @ 2A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
AM2334NE-T1-PF-ML	MOSLEADER	Single N 30V 3.5A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT3080ALHRC11	Rohm Semiconductor	SICFET N-CH 650V 30A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 134W Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: -	Stock1,362	SiCFET (Silicon Carbide)	650 V	30A (Tc)	18V	5.6V @ 5mA	48 nC @ 18 V	571 pF @ 500 V	+22V, -4V	-	134W	104mOhm @ 10A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
IPA60R520E6XKSA1	Infineon Technologies	MOSFET N-CH 600V 8.1A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	8.1A (Tc)	10V	3.5V @ 230µA	23.4 nC @ 10 V	512 pF @ 100 V	±20V	-	29W (Tc)	520mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
NTTFS5C680NLTAG	onsemi	MOSFET N-CH 60V 7.82A/20A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 7.82A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Stock4,500	MOSFET (Metal Oxide)	60 V	7.82A (Ta), 20A (Tc)	4.5V, 10V	2.2V @ 13µA	6 nC @ 10 V	327 pF @ 25 V	±20V	-	3W (Ta), 20W (Tc)	26.5mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
DMN1008UFDF-7	Diodes Incorporated	MOSFET N-CH 12V 12.2A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Stock7,275	MOSFET (Metal Oxide)	12 V	12.2A (Ta)	2.5V, 4.5V	1V @ 250µA	23.4 nC @ 8 V	995 pF @ 6 V	±8V	-	700mW (Ta)	8mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
IMZA65R027M1HXKSA1	Infineon Technologies	MOSFET 650V NCH SIC TRENCH FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 11mA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 189W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-3 Package / Case: TO-247-4	Package: -	Stock1,380	SiCFET (Silicon Carbide)	650 V	59A (Tc)	18V	5.7V @ 11mA	63 nC @ 18 V	2131 pF @ 400 V	+23V, -5V	-	189W (Tc)	34mOhm @ 38.3A, 18V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4-3	TO-247-4
PJS6412_S1_00001	Panjit International Inc.	30V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: -	Stock8,850	MOSFET (Metal Oxide)	30 V	8A (Ta)	4.5V, 10V	2.5V @ 250µA	4.3 nC @ 4.5 V	392 pF @ 25 V	±20V	-	2W (Ta)	23mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
NTPF190N65S3H	onsemi	POWER MOSFET, N-CHANNEL, SUPERFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 16A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.4mA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	16A (Tj)	10V	4V @ 1.4mA	31 nC @ 10 V	1600 pF @ 400 V	±30V	-	32W (Tc)	190mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
QM2421K-ML	MOSLEADER	Single P -20V -4A SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJK03P8DPA-00-J5A	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-