Page 935 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLR4343TRL
Infineon Technologies

MOSFET N-CH 55V 26A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,864
BSS84AKT,115
NXP

MOSFET P-CH 50V SC-75

Package: SC-75, SOT-416

Stock4,400
SI7100DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 8V 35A PPAK 1212-8

Package: PowerPAK? 1212-8

Stock86,580
SI1303DL-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 670MA SOT323-3

Package: SC-70, SOT-323

Stock980,652
NTD3808NT4G
ON Semiconductor

MOSFET N-CH 16V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock120,048
NTB60N06L
ON Semiconductor

MOSFET N-CH 60V 60A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,000
NTB18N06LT4
ON Semiconductor

MOSFET N-CH 60V 15A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock897,024
BUK652R3-40C,127
NXP

MOSFET N-CH 40V 120A TO220AB

Package: TO-220-3

Stock7,184
STW13NK80Z
STMicroelectronics

MOSFET N-CH 800V 12A TO-247

Package: TO-247-3

Stock33,600
STS17NF3LL
STMicroelectronics

MOSFET N-CH 30V 17A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock409,524
STW38NB20
STMicroelectronics

MOSFET N-CH 200V 38A TO-247

Package: TO-247-3

Stock5,680
DMTH10H005LCT
Diodes Incorporated

MOSFET BVDSS: 61V 100V TO220AB

Package: TO-220-3

Stock5,728
NVB6412ANT4G
ON Semiconductor

MOSFET N-CH 100V 59A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,704
STDLED524
STMicroelectronics

MOSFET N-CH 525V 4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,952
IRFU9110PBF
Vishay Siliconix

MOSFET P-CH 100V 3.1A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock1,033,380
IXFH320N10T2
IXYS

MOSFET N-CH 100V 320A TO-247

Package: TO-247-3

Stock390,000
FDPF8N50NZF
Fairchild/ON Semiconductor

MOSFET N-CH 500V 7A TO-220F

Package: TO-220-3 Full Pack

Stock9,312
DN1509N8-G
Microchip Technology

MOSFET N-CH 90V 360MA SOT89-3

Package: TO-243AA

Stock6,512
FCPF190N60E
Fairchild/ON Semiconductor

MOSFET N-CH 600V TO-220-3

Package: TO-220-3 Full Pack

Stock476,520
FQT2P25TF
Fairchild/ON Semiconductor

MOSFET P-CH 250V 0.55A SOT-223

Package: TO-261-4, TO-261AA

Stock13,308

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLR4343TRL	Infineon Technologies	MOSFET N-CH 55V 26A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,864	MOSFET (Metal Oxide)	55V	26A (Tc)	4.5V, 10V	1V @ 250µA	42nC @ 10V	740pF @ 50V	±20V	-	79W (Tc)	50 mOhm @ 4.7A, 10V	-40°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSS84AKT,115	NXP	MOSFET P-CH 50V SC-75 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250mW (Ta), 770mW (Tc) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock4,400	MOSFET (Metal Oxide)	50V	150mA (Ta)	10V	2.1V @ 250µA	0.35nC @ 5V	36pF @ 25V	±20V	-	250mW (Ta), 770mW (Tc)	7.5 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75	SC-75, SOT-416
SI7100DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 8V 35A PPAK 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 3810pF @ 4V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 15A, 4.5V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock86,580	MOSFET (Metal Oxide)	8V	35A (Tc)	2.5V, 4.5V	1V @ 250µA	105nC @ 8V	3810pF @ 4V	±8V	-	3.8W (Ta), 52W (Tc)	3.5 mOhm @ 15A, 4.5V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI1303DL-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 670MA SOT323-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 670mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 290mW (Ta) Rds On (Max) @ Id, Vgs: 430 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock980,652	MOSFET (Metal Oxide)	20V	670mA (Ta)	2.5V, 4.5V	1.4V @ 250µA	2.2nC @ 4.5V	-	±12V	-	290mW (Ta)	430 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3	SC-70, SOT-323
NTD3808NT4G	ON Semiconductor	MOSFET N-CH 16V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,048	MOSFET (Metal Oxide)	16V	12A (Ta), 76A (Tc)	4.5V, 10V	2.5V @ 250µA	21nC @ 4.5V	1660pF @ 12V	±16V	-	1.3W (Ta), 52W (Tc)	5.8 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTB60N06L	ON Semiconductor	MOSFET N-CH 60V 60A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3075pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,000	MOSFET (Metal Oxide)	60V	60A (Ta)	5V	2V @ 250µA	65nC @ 5V	3075pF @ 25V	±15V	-	2.4W (Ta), 150W (Tj)	16 mOhm @ 30A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB18N06LT4	ON Semiconductor	MOSFET N-CH 60V 15A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 48.4W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock897,024	MOSFET (Metal Oxide)	60V	15A (Tc)	5V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±10V	-	48.4W (Tc)	100 mOhm @ 7.5A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK652R3-40C,127	NXP	MOSFET N-CH 40V 120A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15100pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,184	MOSFET (Metal Oxide)	40V	120A (Tc)	4.5V, 10V	2.8V @ 1mA	260nC @ 10V	15100pF @ 25V	±16V	-	306W (Tc)	2.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STW13NK80Z	STMicroelectronics	MOSFET N-CH 800V 12A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock33,600	MOSFET (Metal Oxide)	800V	12A (Tc)	10V	4.5V @ 100µA	155nC @ 10V	3480pF @ 25V	±30V	-	230W (Tc)	650 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STS17NF3LL	STMicroelectronics	MOSFET N-CH 30V 17A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 25V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 3.2W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock409,524	MOSFET (Metal Oxide)	30V	17A (Tc)	4.5V, 10V	1V @ 250µA	35nC @ 4.5V	2160pF @ 25V	±18V	-	3.2W (Tc)	5.5 mOhm @ 8.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STW38NB20	STMicroelectronics	MOSFET N-CH 200V 38A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 19A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,680	MOSFET (Metal Oxide)	200V	38A (Tc)	10V	5V @ 250µA	95nC @ 10V	3800pF @ 25V	±30V	-	180W (Tc)	65 mOhm @ 19A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
DMTH10H005LCT	Diodes Incorporated	MOSFET BVDSS: 61V 100V TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3688pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 187W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,728	MOSFET (Metal Oxide)	100V	140A (Tc)	10V	3.5V @ 250µA	114nC @ 10V	3688pF @ 50V	±20V	-	187W (Tc)	5 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NVB6412ANT4G	ON Semiconductor	MOSFET N-CH 100V 59A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 18.2 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,704	MOSFET (Metal Oxide)	100V	58A (Tc)	10V	4V @ 250µA	100nC @ 10V	3500pF @ 25V	±20V	-	167W (Tc)	18.2 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STDLED524	STMicroelectronics	MOSFET N-CH 525V 4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,952	MOSFET (Metal Oxide)	525V	4A (Tc)	10V	4.5V @ 50µA	12nC @ 10V	340pF @ 100V	±30V	-	45W (Tc)	2.6 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFU9110PBF	Vishay Siliconix	MOSFET P-CH 100V 3.1A I-PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock1,033,380	MOSFET (Metal Oxide)	100V	3.1A (Tc)	10V	4V @ 250µA	8.7nC @ 10V	200pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	1.2 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IXFH320N10T2	IXYS	MOSFET N-CH 100V 320A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 320A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 26000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	100V	320A (Tc)	10V	4V @ 250µA	430nC @ 10V	26000pF @ 25V	±20V	-	1000W (Tc)	3.5 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
FDPF8N50NZF	Fairchild/ON Semiconductor	MOSFET N-CH 500V 7A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock9,312	MOSFET (Metal Oxide)	500V	7A (Tc)	10V	5V @ 250µA	18nC @ 10V	735pF @ 25V	±25V	-	40W (Tc)	1 Ohm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
DN1509N8-G	Microchip Technology	MOSFET N-CH 90V 360MA SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 360mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 200mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock6,512	MOSFET (Metal Oxide)	90V	360mA (Tj)	0V	-	-	150pF @ 25V	±20V	Depletion Mode	1.6W (Ta)	6 Ohm @ 200mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
FCPF190N60E	Fairchild/ON Semiconductor	MOSFET N-CH 600V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3175pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock476,520	MOSFET (Metal Oxide)	600V	20.6A (Tc)	10V	3.5V @ 250µA	82nC @ 10V	3175pF @ 25V	±20V	-	39W (Tc)	190 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
FQT2P25TF	Fairchild/ON Semiconductor	MOSFET P-CH 250V 0.55A SOT-223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 550mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 275mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock13,308	MOSFET (Metal Oxide)	250V	550mA (Tc)	10V	5V @ 250µA	8.5nC @ 10V	250pF @ 25V	±30V	-	2.5W (Tc)	4 Ohm @ 275mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
STP200NF03	STMicroelectronics	MOSFET N-CH 30V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock463,788	MOSFET (Metal Oxide)	30V	120A (Tc)	10V	4V @ 250µA	140nC @ 10V	4950pF @ 25V	±20V	-	300W (Tc)	3.6 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIR494DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 12V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 6V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock22,350	MOSFET (Metal Oxide)	12V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	150nC @ 10V	6900pF @ 6V	±20V	-	6.25W (Ta), 104W (Tc)	1.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
MCU04N60-TP	Micro Commercial Co	MOSFET N-CH 600V 4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	4A (Ta)	10V	4V @ 250µA	10 nC @ 10 V	760 pF @ 25 V	±30V	-	-	3Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFA10N60P-TRL	IXYS	MOSFET N-CH 600V 10A D2-PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,100	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IAUS300N08S5N014TATMA1	Infineon Technologies	MOSFET N-CH 80V 300A HDSOP-16-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-16-2 Package / Case: 16-PowerSOP Module	Package: -	Stock6,846	MOSFET (Metal Oxide)	80 V	300A (Tj)	6V, 10V	3.8V @ 230µA	187 nC @ 10 V	13178 pF @ 40 V	±20V	-	300W (Tc)	1.4mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HDSOP-16-2	16-PowerSOP Module
2SJ532-E	Renesas	2SJ532 - P-CHANNEL POWER MOSFET, FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 10A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220CFM Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	20A (Ta)	4V, 10V	2V @ 1mA	-	1750 pF @ 10 V	±20V	-	30W (Tc)	55mOhm @ 10A, 10V	150°C	Through Hole	TO-220CFM	TO-220-3 Full Pack
IPW60R299CPFKSA1	Infineon Technologies	MOSFET N-CH 600V 11A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	11A (Tc)	10V	3.5V @ 440µA	29 nC @ 10 V	1100 pF @ 100 V	±20V	-	96W (Tc)	299mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
UPD70F3417GCA-V02-UEU-X3-Q-G	Renesas Electronics Corporation	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-