Page 937 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRL1104LPBF
Infineon Technologies

MOSFET N-CH 40V 104A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,320
AON6400
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 85A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock7,280
2SK0665G0L
Panasonic Electronic Components

MOSFET N-CH 20V .1A SMINI-3

Package: SC-85

Stock3,280
IRFBA22N50APBF
Vishay Siliconix

MOSFET N-CH 500V 24A SUPER-220

Package: Super-220?

Stock5,360
STW43NM50N
STMicroelectronics

MOSFET N-CH 500V 37A TO-247

Package: TO-247-3

Stock52,560
STF8NM60N
STMicroelectronics

MOSFET N-CH 600V 7A TO-220FP

Package: TO-220-3 Full Pack

Stock57,672
NVMFS4841NWFT1G
ON Semiconductor

MOSFET N-CH 30V 89A SO8FL

Package: 8-PowerTDFN

Stock5,936
PSMN6R0-30YLDX
Nexperia USA Inc.

MOSFET N-CH 30V 7A LFPAK

Package: SC-100, SOT-669

Stock5,120
SSM6H19NU,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 2A 6UDFN

Package: 6-UDFN Exposed Pad

Stock4,992
STP80N6F6
STMicroelectronics

MOSFET N-CH 60V TO-220

Package: TO-220-3

Stock828,000
STP40NF10
STMicroelectronics

MOSFET N-CH 100V 50A TO-220

Package: TO-220-3

Stock445,356
SI7686DP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 35A PPAK SO-8

Package: PowerPAK? SO-8

Stock2,816,748
BSC0902NSI
Infineon Technologies

MOSFET N-CH 30V 100A 8TDSON

Package: 8-PowerTDFN

Stock47,916
IRFS3006TRL7PP
Infineon Technologies

MOSFET N-CH 60V 240A D2PAK7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock17,988
BS250FTA
Diodes Incorporated

MOSFET P-CH 45V 0.09A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock600,000
SI2333DDS-T1-BE3
Vishay Siliconix

P-CHANNEL 12-V (D-S) MOSFET

Package: -

Stock16,968
5LN01C-TB-EX
onsemi

MOSFET N-CH 50V 100MA 3CP

Package: -

Request a Quote
NVLJS053N12MCLTAG
onsemi

PTNG 120V LL NCH IN UDFN 2.0X2.0

Package: -

Stock8,514
SM2404NSANC-TRG-ML
MOSLEADER

N 30V 5.1A SOT-23N

Package: -

Request a Quote
2SK3377-Z-AZ
Renesas

2SK3377-Z-AZ - SWITCHING N-CHANN

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRL1104LPBF	Infineon Technologies	MOSFET N-CH 40V 104A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,320	MOSFET (Metal Oxide)	40V	104A (Tc)	4.5V, 10V	1V @ 250µA	68nC @ 4.5V	3445pF @ 25V	±16V	-	2.4W (Ta), 167W (Tc)	8 mOhm @ 62A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
AON6400	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 85A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock7,280	MOSFET (Metal Oxide)	30V	31A (Ta), 85A (Tc)	4.5V, 10V	2.2V @ 250µA	170nC @ 10V	8300pF @ 15V	±20V	-	2.3W (Ta), 83W (Tc)	1.4 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
2SK0665G0L	Panasonic Electronic Components	MOSFET N-CH 20V .1A SMINI-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): 8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 50 Ohm @ 20mA, 5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMini3-F2 Package / Case: SC-85	Package: SC-85	Stock3,280	MOSFET (Metal Oxide)	20V	100mA (Ta)	5V	3.5V @ 100µA	-	-	8V	-	150mW (Ta)	50 Ohm @ 20mA, 5V	150°C (TJ)	Surface Mount	SMini3-F2	SC-85
IRFBA22N50APBF	Vishay Siliconix	MOSFET N-CH 500V 24A SUPER-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 340W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 13.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-220? (TO-273AA) Package / Case: Super-220?	Package: Super-220?	Stock5,360	MOSFET (Metal Oxide)	500V	24A (Tc)	10V	4V @ 250µA	115nC @ 10V	3400pF @ 25V	±30V	-	340W (Tc)	230 mOhm @ 13.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	SUPER-220? (TO-273AA)	Super-220?
STW43NM50N	STMicroelectronics	MOSFET N-CH 500V 37A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 18.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock52,560	MOSFET (Metal Oxide)	500V	37A (Tc)	10V	4V @ 250µA	140nC @ 10V	4200pF @ 50V	±25V	-	255W (Tc)	85 mOhm @ 18.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STF8NM60N	STMicroelectronics	MOSFET N-CH 600V 7A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock57,672	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	4V @ 250µA	19nC @ 10V	560pF @ 50V	±25V	-	25W (Tc)	650 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
NVMFS4841NWFT1G	ON Semiconductor	MOSFET N-CH 30V 89A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1436pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 112W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,936	MOSFET (Metal Oxide)	30V	16A (Ta)	4.5V, 10V	2.5V @ 250µA	17nC @ 4.5V	1436pF @ 12V	±20V	-	3.7W (Ta), 112W (Tc)	7 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
PSMN6R0-30YLDX	Nexperia USA Inc.	MOSFET N-CH 30V 7A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 832pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock5,120	MOSFET (Metal Oxide)	30V	66A (Tc)	4.5V, 10V	2.2V @ 1mA	13.7nC @ 10V	832pF @ 15V	±20V	-	47W (Tc)	6 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
SSM6H19NU,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 2A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.2V Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 185 mOhm @ 1A, 8V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock4,992	MOSFET (Metal Oxide)	40V	2A (Ta)	1.8V, 8V	1.2V @ 1mA	2.2nC @ 4.2V	130pF @ 10V	±12V	-	1W (Ta)	185 mOhm @ 1A, 8V	150°C (TJ)	Surface Mount	6-UDFN (2x2)	6-UDFN Exposed Pad
STP80N6F6	STMicroelectronics	MOSFET N-CH 60V TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7480pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock828,000	MOSFET (Metal Oxide)	60V	110A (Tc)	10V	4.5V @ 250µA	122nC @ 10V	7480pF @ 25V	±20V	-	120W (Tc)	5.8 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STP40NF10	STMicroelectronics	MOSFET N-CH 100V 50A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock445,356	MOSFET (Metal Oxide)	100V	50A (Tc)	10V	4V @ 250µA	62nC @ 10V	2180pF @ 25V	±20V	-	150W (Tc)	28 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SI7686DP-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 35A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 37.9W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock2,816,748	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	3V @ 250µA	26nC @ 10V	1220pF @ 15V	±20V	-	5W (Ta), 37.9W (Tc)	9.5 mOhm @ 13.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
BSC0902NSI	Infineon Technologies	MOSFET N-CH 30V 100A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock47,916	MOSFET (Metal Oxide)	30V	23A (Ta), 100A (Tc)	4.5V, 10V	2V @ 10mA	32nC @ 10V	1500pF @ 15V	±20V	-	2.5W (Ta), 48W (Tc)	2.8 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IRFS3006TRL7PP	Infineon Technologies	MOSFET N-CH 60V 240A D2PAK7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8850pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 168A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock17,988	MOSFET (Metal Oxide)	60V	240A (Tc)	10V	4V @ 250µA	300nC @ 10V	8850pF @ 50V	±20V	-	375W (Tc)	2.1 mOhm @ 168A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
BS250FTA	Diodes Incorporated	MOSFET P-CH 45V 0.09A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330mW (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock600,000	MOSFET (Metal Oxide)	45V	90mA (Ta)	10V	3.5V @ 1mA	-	25pF @ 10V	±20V	-	330mW (Ta)	14 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SI2333DDS-T1-BE3	Vishay Siliconix	P-CHANNEL 12-V (D-S) MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock16,968	MOSFET (Metal Oxide)	12 V	5A (Ta), 6A (Tc)	1.5V, 4.5V	1V @ 250µA	35 nC @ 8 V	1275 pF @ 6 V	±8V	-	1.2W (Ta), 1.7W (Tc)	28mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
5LN01C-TB-EX	onsemi	MOSFET N-CH 50V 100MA 3CP FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 100mA (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	100mA (Tj)	-	-	-	-	-	-	-	-	-	-	-	-
NVLJS053N12MCLTAG	onsemi	PTNG 120V LL NCH IN UDFN 2.0X2.0 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 620mW (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (2x2) Package / Case: 6-UDFN Exposed Pad	Package: -	Stock8,514	MOSFET (Metal Oxide)	120 V	4.8A (Ta)	4.5V, 10V	3V @ 30µA	7.8 nC @ 10 V	520 pF @ 60 V	±20V	-	620mW (Ta)	53mOhm @ 5.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	6-UDFN (2x2)	6-UDFN Exposed Pad
SM2404NSANC-TRG-ML	MOSLEADER	N 30V 5.1A SOT-23N FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK3377-Z-AZ	Renesas	2SK3377-Z-AZ - SWITCHING N-CHANN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 10A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: TO-252 (MP-3Z) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	20A (Ta)	4V, 10V	2.5V @ 1mA	17 nC @ 10 V	760 pF @ 10 V	±20V	-	1W (Ta), 30W (Tc)	44mOhm @ 10A, 10V	150°C	Surface Mount	TO-252 (MP-3Z)	TO-252-3, DPAK (2 Leads + Tab), SC-63
2N7002-F169	onsemi	MOSFET N-CH 60V SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	115mA (Tc)	5V, 10V	2.5V @ 250µA	-	50 pF @ 25 V	±20V	-	200mW (Tc)	7.5Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
APT8015JVFR	Microchip Technology	MOSFET N-CH 800V 44A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17650 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	44A (Tc)	-	4V @ 5mA	285 nC @ 10 V	17650 pF @ 25 V	-	-	-	150mOhm @ 500mA, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
DMP2004TK-7-79	Diodes Incorporated	DIODE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.97 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 16 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 230mW (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	430mA (Ta)	1.8V, 4.5V	1V @ 250µA	0.97 nC @ 8 V	47 pF @ 16 V	±8V	-	230mW (Ta)	1.1Ohm @ 430mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
2SK1337TZ-E	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IMDQ75R040M1HXUMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 750 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs(th) (Max) @ Id: 5.6V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 211W (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	750 V	47A (Tc)	15V, 20V	5.6V @ 6mA	34 nC @ 18 V	1135 pF @ 500 V	+23V, -5V	-	211W (Tc)	37mOhm @ 16.6A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
IRF224	International Rectifier	N-CHANNEL HERMETIC MOS HEXFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 3.8A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 40W Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	3.8A	-	-	-	-	-	-	40W	-	-	Through Hole	TO-204AA (TO-3)	TO-204AA, TO-3
SIL02N15A-TP	Micro Commercial Co	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Tj) Rds On (Max) @ Id, Vgs: 290mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6L Package / Case: SOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	2A (Ta)	8V, 10V	2.5V @ 250µA	14 nC @ 10 V	666 pF @ 100 V	±20V	-	1.8W (Tj)	290mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6L	SOT-23-6
BUK6D38-30EX	Nexperia USA Inc.	MOSFET N-CH 30V 5.5A/17A 6DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock15,660	MOSFET (Metal Oxide)	30 V	5.5A (Ta), 17A (Tc)	4.5V, 10V	2.5V @ 250µA	8 nC @ 10 V	266 pF @ 15 V	±20V	-	2W (Ta), 19W (Tc)	38mOhm @ 5.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad