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Central Semiconductor Corp |
JFET P-CHAN 30V TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: 5.5pF @ 10V (VGS)
- Resistance - RDS(On): 125 Ohm
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock11,148 |
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30V | - | 7mA @ 15V | - | 3V @ 10nA | 5.5pF @ 10V (VGS) | 125 Ohm | 350mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92 |
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Microsemi Corporation |
N CHANNEL JFET
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,168 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
JFET N-CH 0.1W
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-72
- Supplier Device Package: 3-SPA
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Package: SC-72 |
Stock6,976 |
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- | - | 100µA @ 5V | 1mA | 500mV @ 1µA | 4.1pF @ 5V | - | 100mW | 150°C (TJ) | Through Hole | SC-72 | 3-SPA |
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Vishay Siliconix |
JFET P-CH 35V 1MA SOT-23
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock73,200 |
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25V | - | 1mA @ 15V | - | 300mV @ 10nA | 5pF @ 15V | - | 350mW | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Vishay Siliconix |
JFET N-CH 30V 360MW TO-18
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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Package: TO-206AA, TO-18-3 Metal Can |
Stock2,896 |
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- | - | - | - | - | - | - | - | - | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-206AA (TO-18) |
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Vishay Siliconix |
JFET N-CH 40V 360MA TO-18
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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Package: TO-206AA, TO-18-3 Metal Can |
Stock6,304 |
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- | - | - | - | - | - | - | - | - | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-206AA (TO-18) |
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ON Semiconductor |
JFET N-CH 1MA 30MW USFP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 2V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
- Resistance - RDS(On): -
- Power - Max: 30mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Leads
- Supplier Device Package: 3-USFP
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Package: 3-SMD, Flat Leads |
Stock5,424 |
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- | - | 100µA @ 2V | 1mA | 100mV @ 1µA | 3.1pF @ 2V | - | 30mW | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 3-USFP |
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Fairchild/ON Semiconductor |
JFET N-CH 40V 0.625W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
- Resistance - RDS(On): 50 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,360 |
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40V | - | 15mA @ 20V | - | 2V @ 1nA | 16pF @ 20V | 50 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 30V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800mV @ 4nA
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
- Resistance - RDS(On): 60 Ohm
- Power - Max: 350mW
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,384 |
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30V | - | 8mA @ 15V | - | 800mV @ 4nA | 18pF @ 10V (VGS) | 60 Ohm | 350mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
JFET N-CH 225MW SOT23
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2.5V @ 0.5nA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 225mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock28,716 |
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- | 25V | 1mA @ 10V | - | 2.5V @ 0.5nA | 5pF @ 10V | - | 225mW | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1V @ 3nA
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
- Resistance - RDS(On): 10 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,528 |
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25V | - | 30mA @ 15V | - | 1V @ 3nA | 30pF @ 10V (VGS) | 10 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 250 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock285,240 |
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30V | - | 2mA @ 15V | - | 1V @ 10nA | - | 250 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 85 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,064 |
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30V | - | 20mA @ 15V | - | 5V @ 10nA | - | 85 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 20V 0.15W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 20V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
- Resistance - RDS(On): -
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,704 |
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20V | - | 100µA @ 5V | 1mA | 600mV @ 1µA | 3.5pF @ 5V | - | 150mW | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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NXP |
JFET 2N-CH 25V 0.19W 6TSSOP
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 24mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Resistance - RDS(On): 50 Ohm
- Power - Max: 190mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock6,048 |
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25V | 25V | 24mA @ 10V | - | 2V @ 1µA | 5pF @ 10V | 50 Ohm | 190mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
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Microsemi Corporation |
N CHANNEL JFET
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,248 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild/Micross Components |
DIE MOSFET N-CH 40V
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock16,968 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
JFET N-CH 1MA 125MW CP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 60µA @ 10V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 1.5V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 1.7pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 125mW
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,016 |
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- | 40V | 60µA @ 10V | 1mA | 1.5V @ 1µA | 1.7pF @ 10V | - | 125mW | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CP |
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Panasonic Electronic Components |
JFET N-CH 10MA 200MW MINI-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1.4µA @ 10V
- Current Drain (Id) - Max: 10mA
- Voltage - Cutoff (VGS off) @ Id: 3.5V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 200mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G1
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,192 |
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- | - | 1.4µA @ 10V | 10mA | 3.5V @ 1µA | 5pF @ 10V | - | 200mW | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Mini3-G1 |
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NXP |
JFET N-CH 25V 250MW SOT23
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
- Resistance - RDS(On): 18 Ohm
- Power - Max: 250mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock89,670 |
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25V | 25V | 10mA @ 15V | - | 4V @ 1µA | 30pF @ 10V (VGS) | 18 Ohm | 250mW | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 (TO-236AB) |
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Microchip Technology |
JFET P-CH 30V UB
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
- Resistance - RDS(On): 75 Ohms
- Power - Max: 500 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: - |
Request a Quote |
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30 V | 30 V | 30 mA @ 18 V | - | 5 V @ 1 nA | 25pF @ 15V | 75 Ohms | 500 mW | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Linear Integrated Systems, Inc. |
JFET 2N-CH 40V TO78-7
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 500 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-7 Metal Can
- Supplier Device Package: TO-78-7
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Package: - |
Stock1,485 |
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40 V | - | - | - | - | 3pF @ 10V | - | 500 mW | -55°C ~ 150°C (TJ) | Through Hole | TO-78-7 Metal Can | TO-78-7 |
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InterFET |
JFET N-Channel -40V Low Noise
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 20 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 20V
- Resistance - RDS(On): 70 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: - |
Request a Quote |
|
- | 40 V | 12 mA @ 20 V | - | 1.5 V @ 1 nA | 13pF @ 20V | 70 Ohms | 350 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | SOT-23-3 |
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Linear Integrated Systems, Inc. |
JFET N-CH 40V 10MA TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: - |
Stock741 |
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40 V | 40 V | 200 µA @ 15 V | 10 mA | 300 mV @ 10 nA | 4.5pF @ 15V | - | 350 mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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InterFET |
JFET N-Channel -20V Low Noise
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 20 V
- Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1.1 V @ 0.5 nA
- Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
- Resistance - RDS(On): 50 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: - |
Request a Quote |
|
- | 20 V | 10 mA @ 10 V | - | 1.1 V @ 0.5 nA | 15pF @ 10V | 50 Ohms | 350 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | SOT-23-3 |
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Linear Integrated Systems, Inc. |
JFET P-CH 30V SOT23-3
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 85 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 135°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Stock24,726 |
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30 V | - | - | - | - | - | 85 Ohms | 350 mW | -55°C ~ 135°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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onsemi |
JFET N-CH 35V TO92-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 50 Ohms
- Power - Max: 625 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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Package: - |
Request a Quote |
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35 V | - | 5 mA @ 15 V | - | 1 V @ 1 µA | - | 50 Ohms | 625 mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 |
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Microchip Technology |
JFET N-CH 30V UB
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
- Resistance - RDS(On): 60 Ohms
- Power - Max: 360 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: - |
Request a Quote |
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30 V | 30 V | 8 mA @ 15 V | - | 800 mV @ 500 pA | 18pF @ 10V | 60 Ohms | 360 mW | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |