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Infineon Technologies |
JFET N-CHAN 35A TO247-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 1200V
- Current - Drain (Idss) @ Vds (Vgs=0): 3.3µA @ 1200V
- Current Drain (Id) - Max: 35A
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 19.5V (VGS)
- Resistance - RDS(On): 70 mOhm
- Power - Max: 238W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Package: TO-247-3 |
Stock6,912 |
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- | 1200V | 3.3µA @ 1200V | 35A | - | 2000pF @ 19.5V (VGS) | 70 mOhm | 238W | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 |
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Microsemi Corporation |
P CHANNEL JFET
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
- Resistance - RDS(On): 175 Ohm
- Power - Max: 500mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
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Package: TO-206AA, TO-18-3 Metal Can |
Stock13,440 |
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30V | 30V | 25mA @ 15V | - | 4V @ 1nA | 27pF @ 15V | 175 Ohm | 500mW | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 |
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Vishay Siliconix |
JFET N-CH 30V 0.5W TO-206AC
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 500mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
- Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
- Resistance - RDS(On): 3 Ohm
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AC, TO-52-3 Metal Can
- Supplier Device Package: TO-206AC (TO-52)
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Package: TO-206AC, TO-52-3 Metal Can |
Stock5,216 |
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30V | - | 500mA @ 10V | - | 4V @ 3nA | 160pF @ 0V | 3 Ohm | 500mW | -55°C ~ 150°C (TJ) | Through Hole | TO-206AC, TO-52-3 Metal Can | TO-206AC (TO-52) |
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Vishay Siliconix |
JFET N-CH 50V TO-71
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-71-6
- Supplier Device Package: TO-71
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Package: TO-71-6 |
Stock5,680 |
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- | - | - | - | - | - | - | - | - | Through Hole | TO-71-6 | TO-71 |
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Vishay Siliconix |
JFET N-CH 40V 80MA TO-18
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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Package: TO-206AA, TO-18-3 Metal Can |
Stock4,976 |
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- | - | - | - | - | - | - | - | - | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-206AA (TO-18) |
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Vishay Siliconix |
MOSFET N-CH 50V 600UA TO-206AA
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 50V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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Package: TO-206AA, TO-18-3 Metal Can |
Stock7,856 |
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50V | - | 200µA @ 15V | - | 300mV @ 100nA | 7pF @ 15V | - | 300mW | -55°C ~ 175°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-206AA (TO-18) |
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ON Semiconductor |
JFET N-CH 25V 0.31W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 18 Ohm
- Power - Max: 310mW
- Operating Temperature: 135°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,904 |
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25V | - | 10mA @ 15V | - | 500mV @ 1µA | - | 18 Ohm | 310mW | 135°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 6 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,856 |
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25V | - | 200mA @ 15V | - | 2V @ 1µA | - | 6 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 40V 0.625W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
- Resistance - RDS(On): 50 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,224 |
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40V | - | 15mA @ 20V | - | 2V @ 1nA | 16pF @ 20V | 50 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 20V 0.1W TO-92S
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 20V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
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Package: TO-226-3, TO-92-3 Short Body |
Stock2,800 |
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20V | - | 100µA @ 5V | 1mA | 600mV @ 1µA | 3.5pF @ 5V | - | 100mW | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Short Body | TO-92S |
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Panasonic Electronic Components |
JFET P-CH 20MA 150MW MINI-3
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V
- Current Drain (Id) - Max: 20mA
- Voltage - Cutoff (VGS off) @ Id: 1.5V @ 10µA
- Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
- Resistance - RDS(On): 300 Ohm
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G1
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,528 |
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- | - | 600µA @ 10V | 20mA | 1.5V @ 10µA | 12pF @ 10V | 300 Ohm | 150mW | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Mini3-G1 |
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ON Semiconductor |
JFET P-CH 40V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 135°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,104 |
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40V | - | 2mA @ 15V | - | 1V @ 1µA | 7pF @ 15V | - | 350mW | -65°C ~ 135°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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ON Semiconductor |
JFET P-CH 40V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 750mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 135°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,944 |
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40V | - | 1mA @ 15V | - | 750mV @ 1µA | 7pF @ 15V | - | 350mW | -65°C ~ 135°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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NXP |
JFET N-CH 10MA 250MW SOT23
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 10V
- Current Drain (Id) - Max: 10mA
- Voltage - Cutoff (VGS off) @ Id: 5V @ 0.5nA
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 250mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,784 |
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- | 25V | 4mA @ 10V | 10mA | 5V @ 0.5nA | 4pF @ 10V | - | 250mW | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 (TO-236AB) |
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Toshiba Semiconductor and Storage |
JFET N-CH 50V SMV
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 300mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock148,380 |
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- | - | 6mA @ 10V | - | 200mV @ 100nA | 13pF @ 10V | - | 300mW | 125°C (TJ) | Surface Mount | SC-74A, SOT-753 | SMV |
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Toshiba Semiconductor and Storage |
JFET N-CH 0.1W USM
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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Package: SC-70, SOT-323 |
Stock25,206 |
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- | - | 1.2mA @ 10V | - | 400mV @ 100nA | 8.2pF @ 10V | - | 100mW | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | USM |
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ON Semiconductor |
JFET N-CH 50MA 200MW CP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 15V
- Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 5V
- Current Drain (Id) - Max: 50mA
- Voltage - Cutoff (VGS off) @ Id: 200mV @ 100µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: 200mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock128,892 |
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- | 15V | 10mA @ 5V | 50mA | 200mV @ 100µA | - | - | 200mW | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CP |
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Linear Integrated Systems, Inc. |
JFET 2N-CH 25V 50MA TO71
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): 25 V
- Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V
- Current Drain (Id) - Max: 50 mA
- Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 500 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-71-6 Metal Can
- Supplier Device Package: TO-71
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Package: - |
Stock2,109 |
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25 V | 25 V | 7 mA @ 10 V | 50 mA | 1.5 V @ 1 nA | 5pF @ 10V | - | 500 mW | -55°C ~ 150°C (TJ) | Through Hole | TO-71-6 Metal Can | TO-71 |
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InterFET |
JFET N-Channel -30V Low Noise
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
- Resistance - RDS(On): 80 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Request a Quote |
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- | 30 V | 4 mA @ 10 V | - | 600 mV @ 1 nA | 15pF @ 10V | 80 Ohms | 350 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | SOT-23-3 |
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InterFET |
JFET N-Channel -30V Low Ciss
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
- Resistance - RDS(On): 250 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Request a Quote |
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- | 30 V | 4 mA @ 15 V | - | 2 V @ 1 nA | 3.5pF @ 15V | 250 Ohms | 350 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | SOT-23-3 |
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InterFET |
JFET N-Channel -30V Low Ciss
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
- Resistance - RDS(On): 180 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Request a Quote |
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- | 30 V | 8 mA @ 15 V | - | 3 V @ 1 nA | 3.5pF @ 15V | 180 Ohms | 350 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | SOT-23-3 |
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Microchip Technology |
JFET
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Linear Integrated Systems, Inc. |
JFET 2N-CH 40V TO78-7
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 500 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-7 Metal Can
- Supplier Device Package: TO-78-7
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Package: - |
Stock1,500 |
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40 V | - | - | - | - | 3pF @ 10V | - | 500 mW | -55°C ~ 150°C (TJ) | Through Hole | TO-78-7 Metal Can | TO-78-7 |
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Microchip Technology |
JFET N-CH 30V UB
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2 V @ 500 pA
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
- Resistance - RDS(On): 40 Ohms
- Power - Max: 360 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: - |
Request a Quote |
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30 V | 30 V | 20 mA @ 15 V | - | 2 V @ 500 pA | 18pF @ 10V | 40 Ohms | 360 mW | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Linear Integrated Systems, Inc. |
JFET 2N-CH 60V TO71
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 60 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 20V
- Resistance - RDS(On): -
- Power - Max: 400 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-71-6 Metal Can
- Supplier Device Package: TO-71
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Package: - |
Stock1,494 |
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60 V | - | 500 µA @ 20 V | - | 1 V @ 1 nA | 6pF @ 20V | - | 400 mW | -55°C ~ 150°C (TJ) | Through Hole | TO-71-6 Metal Can | TO-71 |
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Central Semiconductor Corp |
JFET N-CH 40V 50MA DIE
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
- Current Drain (Id) - Max: 50 mA
- Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 20V
- Resistance - RDS(On): 60 Ohms
- Power - Max: -
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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40 V | 40 V | 25 mA @ 20 V | 50 mA | 2 V @ 1 nA | 20pF @ 20V | 60 Ohms | - | -65°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Microchip Technology |
JFET P-CH 30V UB
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
- Resistance - RDS(On): 100 Ohms
- Power - Max: 500 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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30 V | 30 V | 15 mA @ 15 V | - | 3 V @ 1 nA | 25pF @ 15V | 100 Ohms | 500 mW | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Central Semiconductor Corp |
JFET N-CH 40V 50MA DIE
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 5 mV @ 3 V
- Current Drain (Id) - Max: 50 mA
- Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 20V
- Resistance - RDS(On): 100 Ohms
- Power - Max: 1.8 W
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
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40 V | 40 V | 5 mV @ 3 V | 50 mA | 500 mV @ 1 nA | 20pF @ 20V | 100 Ohms | 1.8 W | -65°C ~ 175°C (TJ) | Surface Mount | Die | Die |